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acknowledgments.aux
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\chapter*{Introduction} \chapter*{Introduction}
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In condensed matter physics, precise fabrication of nanostructures with sharp patterns is paramount for research in various fields like electronics, photonics and quantum computing. One problem, that is highly sought after in quantum computing, is the creation of Majorana Zero Modes, as these could potentially provide a stable and controllable way to encode information. \textbf{M}ajorana \textbf{Z}ero \textbf{M}odes (MZM) are quasi particles that behave like Majorana fermions with non-Abelian statistics. MZMs are predicted to emerge at the core of vortices at superconductor/topological insulator interfaces~\cite{majorana_zero_modes}. These interfaces require pristine conditions and at the same time patterns, smaller than the coherence length ($<100$ nm) of the superconductor.\\ In condensed matter physics, precise fabrication of nanostructures with sharp patterns is paramount for research in various fields like electronics, photonics and quantum computing. One problem, that is highly sought after in quantum computing, is the creation of Majorana Zero Modes, as these could potentially provide a stable and controllable way to encode information. \textbf{M}ajorana \textbf{Z}ero \textbf{M}odes (MZM) are quasi particles that behave like Majorana fermions with non-Abelian statistics. MZMs are predicted to emerge at the core of vortices at superconductor/topological insulator interfaces~\cite{majorana_zero_modes}. These interfaces require pristine conditions and at the same time patterns, smaller than the coherence length ($<100$ nm) of the superconductor.\\
Atmospheric conditions typically deteriorate surface properties of the required samples. Due to this \textbf{U}ltra \textbf{H}igh \textbf{V}accuum (UHV) conditions are required for the sample. This often limits the pattern creation process, as exposure to ambient conditions or other chemicals are required. \\ Atmospheric conditions typically deteriorate surface properties of the required samples. Due to this \textbf{U}ltra \textbf{H}igh \textbf{V}accuum (UHV) conditions are required for the sample. This often limits the pattern creation process, as exposure to ambient conditions or other chemicals are required. \\
Many methods like \textbf{E}lectron \textbf{B}eam \textbf{L}ithography or \textbf{E}xtreme \textbf{U}ltra\textbf{V}iolet \textbf{L}ithography (EUVL or EUV) give the required precision for patterning at the sub $100$ nm scale,~\cite{euv} but require resists, which typically are deposited with the help of solvents. These leave residues after the patterning process, which damage the pristine condition of the substrate. Typically, these methods can also not be performed under UHV conditions. \\ Many methods like \textbf{E}lectron \textbf{B}eam \textbf{L}ithography or \textbf{E}xtreme \textbf{U}ltra\textbf{V}iolet \textbf{L}ithography (EUVL or EUV) give the required precision for patterning at the sub $100$ nm scale,~\cite{euv} but require resists, which typically are deposited with the help of solvents. These leave residues after the patterning process, which damage the pristine condition of the substrate. Typically, these methods can also not be performed under UHV conditions. \\
Other methods of patterning superconductors on topological insulators have been proposed, but many have shortcomings that make their use impractical. There are for example scanning probe approaches,~\cite{afm_pattern} which can directly manipulate single atoms on surfaces, but require Other methods of patterning superconductors on topological insulators have been proposed, but many have shortcomings that make their use impractical. There are for example scanning probe approaches,~\cite{afm_pattern} which can directly manipulate single atoms on surfaces, but require
long timescales and expensive equipment. Additionally, many Scanning Probe approaches still require resists, leading to the same issues as previously mentioned.\\ long timescales and expensive equipment. Additionally, many Scanning Probe approaches still require resists, leading to the same issues as previously mentioned.\\
A simple and inexpensive approach is stencil lithography employing \textbf{P}hysical \textbf{V}apor \\ \textbf{D}eposition (PVD), where a stencil (mask) is used to mask a section of the sample. When the sample is hit with a molecular vapor beam, the masked areas are protected from the impinging material and stay pristine, while the ones not protected built patterned structures. In this method, no resist is required, and the procedure can be performed at UHV conditions. Resolutions of sub-$50$ nm have been achieved~\cite{stencil_resolution}. \\ A simple and inexpensive approach is stencil lithography employing \textbf{P}hysical \textbf{V}apor \\ \textbf{D}eposition (PVD), where a stencil (mask) is used to mask a section of the sample. When the sample is hit with a molecular vapor beam, the masked areas are protected from the impinging material and stay pristine, while the ones not protected built patterned structures. In this method, no resist is required, and the procedure can be performed at UHV conditions. Resolutions of sub-$50$ nm have been achieved~\cite{stencil_resolution}. \\
Stencil lithography however has its downside. In order to get very high resolution, the mask and the sample have to be very close as otherwise the aperture of the mask creates a "penumbra", limiting the final resolution of the pattern on the sample. The simple and often used approach is to simply bring mask and sample into direct mechanical contact, ensuring minimal distance. This however can \\ Stencil lithography however has its downsides. In order to get very high resolution, the mask and the sample have to be very close as otherwise the aperture of the mask creates a "penumbra", limiting the lateral resolution of the pattern. The simple and often used approach is to simply bring mask and sample into direct mechanical contact, ensuring minimal distance. This however can contaminate the sample or even mechanically damage it.\\
To avoid this a Mask Aligner operating in UHV, the subject of this work, was designed~\cite{Olschewski, Bhaskar}. It is a tool to use capacitive measurement to ensure minimal mask sample distance during PVD, while avoiding full contact with the sample, thus preserving surface condition. This work concerns the optimization, improvement and analysis of the Mask Aligner, as well as work on the creation of additional electronics and software to drive the Mask Aligners operation. To avoid this a Mask Aligner operating in UHV, the subject of this work, was designed~\cite{Olschewski, Bhaskar}. It uses capacitive measurement to ensure minimal mask sample distance during PVD, while avoiding full contact with the sample, thus preserving surface condition. This work concerns the optimization, improvement and analysis of the Mask Aligner, as well as work on the creation of additional electronics and software to drive the Mask Aligners operation.
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