diff --git a/acknowledgments.aux b/acknowledgments.aux
index da2895ffb84c94eaf8f275bdc5767bc2391edb56..c8c87630b6a060cbd82e060ddd9aafef566d6f44 100644
--- a/acknowledgments.aux
+++ b/acknowledgments.aux
@@ -25,7 +25,7 @@
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diff --git a/acknowledgments.tex b/acknowledgments.tex
index e1a2ab55b829f07ac4b3f67f51579eb2913cf236..2f18362dd976920998bc20b8184ceee66bd4a14a 100644
--- a/acknowledgments.tex
+++ b/acknowledgments.tex
@@ -12,13 +12,13 @@ I would also like to express my gratitude to my supervisors, Jonas Beeker and Dr
 
 For frequent discussion and general help, as well as the increase in pressure of my system, I want to thank Michiel Reul. Without his Gold evaporations the Mask Aligner lab would have been a lot more boring.
 
-For help regarding AFM results and Chamber operation (Leak-testing) I would also like to thank Dr. Marcus Liebmann and Dr. Marco Pratzer.
+For help regarding AFM results and Chamber operation (leak testing) I would also like to thank Dr. Marcus Liebmann and Dr. Marco Pratzer.
 
-For help with SEM and EDX measurement and other support, I want to thank Kanji Furuta and Thorben Frahm.
+I also want to thank Kanji Furuta and Thorben Frahm for their support with SEM and EDX measurements, as well as other assistance.
 
-For the nice group atmosphere and interesting discussions I would like to thank the whole work group including Jeff Strasdas, Benjamin Pestka, Michiel Reul, Tim Jacobs, Dishi Gangwar, Niklas Leuth, Marcus Eßer and Reza Habibipour.
+My appreciation goes to the entire work group, including Jeff Strasdas, Benjamin Pestka, Michiel Reul, Tim Jacobs, Dishi Gangwar, Niklas Leuth, Marcus Eßer, and Reza Habibipour, for creating a positive group atmosphere and engaging in stimulating discussions.
 
-For the quick work and pleasant atmosphere during the creation and repair of parts, I want to thank the entire crew of the workshop. 
+I would like to express my gratitude to the entire workshop crew for their swift work and the enjoyable atmosphere during the creation and repair of parts.
 
 Lastly, I want to thank my family for proofreading this thesis and providing feedback, and emotional support during the creation of this thesis. In particular, I would like to thank my father for reading the thesis in full and pointing out errors and hard to understand sections.
 
diff --git a/appendix.aux b/appendix.aux
index 39582286d7cabdde64e8e28d943d1cb7adada1d1..db4206626c6449dfe86f293fc5312e9930d1224a 100644
--- a/appendix.aux
+++ b/appendix.aux
@@ -76,7 +76,7 @@
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diff --git a/appendix.tex b/appendix.tex
index e71889e73ba2d31bc05ff446b640708b9cb4870f..5574eeb5459e26ce4f3f10208b32b4fb3b130937 100644
--- a/appendix.tex
+++ b/appendix.tex
@@ -37,7 +37,7 @@ Sensitivity                         & variable*                            \\ \h
 		Evap. 4 & $40$             & $1.75$        & $10.0-4.9$      & $460-510$       &$2.99 \times 10^{-9}$& $24$                   \\ \hline
 		Evap. 5 & $40$             & $1.75$        & $6.8-4.7$       & $450-500$       &$2.86 \times 10^{-9}$& $24$                   \\ \hline
 	\end{tabular}
-	\caption{Table with all the evaporation parameters. FIL stands for the current applied to the heating Filament, EMIS stands for the emission current, FLUX is the measured molecular flux. Press is the maximum pressure in the chamber during the evaporation, and T is the maximal temperature the crucible reached during the evaporation. The voltage was changed to ensure FLUX was in the desired range between $450-520$}
+	\caption{Table with all the evaporation parameters. FIL stands for the current applied to the heating Filament, EMIS stands for the emission current, FLUX is the measured molecular flux. Press is the maximum pressure in the chamber during the evaporation, and T is the maximal temperature the crucible reached during the evaporation. The voltage was changed to ensure FLUX was in the desired range between $450-520$}.
 	\label{tab:evaporation_settings}
 \end{table}
 %
diff --git a/bibliography.aux b/bibliography.aux
index a9b37dddc8839aedc5554a9edc04842ef01dd451..c1bf0a044e280b2933058e904bc0ee45b8795e95 100644
--- a/bibliography.aux
+++ b/bibliography.aux
@@ -12,22 +12,21 @@
 \bibcite{Vapor_depo_princ}{{8}{}{{}}{{}}}
 \bibcite{sputter_damage}{{9}{}{{}}{{}}}
 \bibcite{tungsten_evaporation}{{10}{}{{}}{{}}}
-\bibcite{afm_physics}{{11}{}{{}}{{}}}
-\bibcite{afm_bio}{{12}{}{{}}{{}}}
+\bibcite{Mask_Aligner}{{11}{}{{}}{{}}}
 \@writefile{toc}{\contentsline {chapter}{Bibliography}{73}{chapter*.73}\protected@file@percent }
-\bibcite{SEM_image_01}{{13}{}{{}}{{}}}
-\bibcite{SEM_image_02}{{14}{}{{}}{{}}}
-\bibcite{SEM_book}{{15}{}{{}}{{}}}
-\bibcite{self_epitaxy}{{16}{}{{}}{{}}}
-\bibcite{Mask_Aligner}{{17}{}{{}}{{}}}
-\bibcite{florian_forster}{{18}{}{{}}{{}}}
-\bibcite{Beeker}{{19}{}{{}}{{}}}
-\bibcite{arduino_datasheet}{{20}{}{{}}{{}}}
-\bibcite{arduino_cpu_datasheet}{{21}{}{{}}{{}}}
-\bibcite{switch_datasheet}{{22}{}{{}}{{}}}
-\bibcite{torr_seal}{{23}{}{{}}{{}}}
-\bibcite{Simon}{{24}{}{{}}{{}}}
-\bibcite{grain_growth}{{25}{}{{}}{{}}}
+\bibcite{florian_forster}{{12}{}{{}}{{}}}
+\bibcite{Beeker}{{13}{}{{}}{{}}}
+\bibcite{afm_physics}{{14}{}{{}}{{}}}
+\bibcite{afm_bio}{{15}{}{{}}{{}}}
+\bibcite{SEM_image_01}{{16}{}{{}}{{}}}
+\bibcite{SEM_image_02}{{17}{}{{}}{{}}}
+\bibcite{SEM_book}{{18}{}{{}}{{}}}
+\bibcite{self_epitaxy}{{19}{}{{}}{{}}}
+\bibcite{Simon}{{20}{}{{}}{{}}}
+\bibcite{grain_growth}{{21}{}{{}}{{}}}
+\bibcite{arduino_datasheet}{{22}{}{{}}{{}}}
+\bibcite{arduino_cpu_datasheet}{{23}{}{{}}{{}}}
+\bibcite{switch_datasheet}{{24}{}{{}}{{}}}
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diff --git a/chap01.tex b/chap01.tex
index 4c21799326267493d99b7351ad325d0160b6594d..7bf8b9eed5cec3e6cd671db586728c857eb9cb98 100644
--- a/chap01.tex
+++ b/chap01.tex
@@ -5,18 +5,22 @@ The Mask Aligner is used to create thin patterned films on samples with high acc
 
 \section{Stencil lithography}
 Stencil lithography is a method of depositing patterned structures on a nanometer scale on substrates (sample) using a stencil. The stencil is typically made of a membrane that is patterned with a lithography process, such as electron beam lithography. Using e-beam lithography, masks can be produced at sub micrometer scales. \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (PVD) processes are used to deposit material. The mask is placed closed to the substrates surface. The molecular beam of evaporated materials only reaches the sample through holes in the mask. In this way, a pattern is transferred from the mask to the sample. \\
-Stencil Lithography can also be used for etching where patterns are carved into the substrate's surface, using reactive ion etching. \\
-Stencil lithography requires no resist or other chemical treatment of the sample and thus protects it from possible contamination. Masks can also be reused many times. The process is relatively simple and fast. In stencil lithography, the fabrication speed is only limited by the possible deposition rate and the complexity of applying the mask to the sample. \\
-While versatile, since many patterns can be deposited or etched, stencil lithography comes with challenges. 
-Material is also deposited on the masks including the side walls of the apertures of the mask, which reduces its effective size over time, an effect referred to as clogging. This means that while masks can be reused, they cannot be reused indefinitely.
-One of the biggest challenges is that in order to get sharp patterns on the substrates surface, the mask has to be placed directly on the surface of the sample. Otherwise effects resulting from the aperture of the molecular beam result in a "blurring" of the intended structures. However, direct placement of the mask on the substrates surface can contaminate or damage both mask and sample. It should be avoided when measurements in devices highly sensitive to contaminants such as \textbf{S}canning \textbf{T}unneling \textbf{M}icroscopes (STMs) is intended. \\
+%Stencil Lithography can also be used for etching where patterns are carved into the substrate's surface, using reactive ion etching. \\
+In addition to deposition, stencil lithography can also be used for etching, where patterns are carved into the substrate's surface using reactive ion etching. \\
+%Stencil lithography requires no resist or other chemical treatment of the sample and thus protects it from possible contamination. Masks can also be reused many times. The process is relatively simple and fast. In stencil lithography, the fabrication speed is only limited by the possible deposition rate and the complexity of applying the mask to the sample. \\
+One of the key advantages of stencil lithography is that it does not require the use of resist or chemical treatment of the sample, thereby protecting it from potential contamination. Masks can also be reused multiple times, making the process relatively simple and fast. The fabrication speed is primarily limited by the deposition rate and the complexity of applying the mask to the sample. \\
+%While versatile, since many patterns can be deposited or etched, stencil lithography comes with challenges. 
+%Material is also deposited on the masks including the side walls of the apertures of the mask, which reduces its effective size over time, an effect referred to as clogging. This means that while masks can be reused, they cannot be reused indefinitely.
+%One of the biggest challenges is that in order to get sharp patterns on the substrates surface, the mask has to be placed directly on the surface of the sample. Otherwise, effects resulting from the aperture of the molecular beam result in a "blurring" of the intended structures. However, direct placement of the mask on the substrates surface can contaminate or damage both mask and sample. It should be avoided when measurements in devices highly sensitive to contaminants such as \textbf{S}canning \textbf{T}unneling \textbf{M}icroscopes (STMs) is intended. \\
+However, stencil lithography also presents several challenges. Material deposition on the mask, including the side walls of the apertures, can reduce its effective size over time, a phenomenon known as clogging. This means that while masks can be reused, they are not indefinitely reusable. \\
+Another significant challenge is the need to place the mask directly on the substrate's surface to achieve sharp patterns. However, this can lead to contamination or damage to both the mask and the sample. Therefore, it is essential to avoid direct mask placement when working with highly sensitive devices, such as \textbf{S}canning \textbf{T}unneling \textbf{M}icroscopes (STMs).
 
 The Mask Aligner in this work is a tool designed to overcome the challenge of sample mask alignment. It allows precise control of mask sample distance and angle. 
 
 \subsubsection{Penumbra}
 The molecular beam, the evaporator generates, is not a set of perfectly parallel beams, rather it will be a spread of beams at slightly different angles. Its aperture is determined by the size of the crucible. It is $a=5$ mm for the setup found on the Mask Aligner. For the purposes of this explanation, the spread can be modeled by two extreme cones (Figure \ref{fig:penumbra_explanation}).\\
 
-The area where both beams overlap is called the "umbra" in analogy to the same phenomenon in optics (Figure \ref{fig:penumbra_explanation}, red areas). The region where only one of the cones hits the sample, but the other is blocked by the mask, is called the "penumbra" (Figure \ref{fig:penumbra_explanation}, orange areas). Hence the intended pattern on the sample is smeared out.\\
+The area where both beams overlap is called the "umbra" in analogy to the same phenomenon in optics (Figure \ref{fig:penumbra_explanation}, red areas). The region where only one of the cones hits the sample, but the other is blocked by the mask, is called the "penumbra" (Figure \ref{fig:penumbra_explanation}, orange areas). Hence, the intended pattern on the sample is smeared out.\\
 
 The width of the penumbra $p$ is determined by the distance of the crucible to the sample $l$, the size of the crucible $a$ and the distance between mask and sample $d$. It can be estimated using Figure \ref{fig:penumbra_explanation}. For $l >> a$ the inner rays coming from the crucible are approximately parallel. This leads to the formula:\\
 
@@ -36,7 +40,7 @@ When using stencil lithography, the penumbra should be as small as possible. The
 \subsubsection{Tilt induced penumbra}
 Formerly, the model for the penumbra assumed perfect alignment between mask and sample. However, if the mask is tilted with respect to the sample, the distance on one side of the mask can be larger than that on the other. 
 
-This results in $2$ different penumbral lengths $p_1$ and $p_2$ along the major axis of the tilt, an illustration of this can be seen in Figure \ref{fig:penumbra_explanation_tilt_2d}.
+This results in $2$ different penumbra lengths $p_1$ and $p_2$ along the major axis of the tilt, an illustration of this can be seen in Figure \ref{fig:penumbra_explanation_tilt_2d}.
 This results in an elliptical penumbra, as shown in Figure \ref{fig:penumbra_explanation_tilt_sim}.\\
 
 \begin{figure}[H]
@@ -51,7 +55,7 @@ This results in an elliptical penumbra, as shown in Figure \ref{fig:penumbra_exp
     \caption{}
 	\label{fig:penumbra_explanation_tilt_sim}
 	\end{subfigure}
-	\caption{A diagram of the evaporation rays for a tilted mask with only one hole (\subref{fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text{i}}$ that appear in a cross-section. (\subref{fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ$ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ {\textmu}m and a hole diameter of $3$ {\textmu}m. Program used for simulation is described in Section \ref{sec:simulation}}
+	\caption{A diagram of the evaporation rays for a tilted mask with only one hole (\subref{fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text{i}}$ that appear in a cross-section. (\subref{fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ$ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ {\textmu}m and a hole diameter of $3$ {\textmu}m. Program used for simulation is described in Section \ref{sec:simulation}}.
     \label{fig:penumbra_explanation_tilt}
 \end{figure}
 
diff --git a/chap02.tex b/chap02.tex
index 934f1388ec001655cd3054a82d66ef3feddb7052..d55bd3c53c3c9905da1935479a02f0eecb23feb8 100644
--- a/chap02.tex
+++ b/chap02.tex
@@ -29,10 +29,10 @@ The deposition rate of the evaporator can be measured using a molecular flux mon
 	\label{eq:hertz_knudsen}
 \end{equation}
 
-where $N$ is the number of gas molecules deposited, $A$ is the surface area, $t$ is time, $\alpha$ is the sticking coefficient, $p$ is the gas pressure of the impinging gas, $m$ is the mass of a single particle, $k_\text{B}$ is the Boltzmann constant, $p_\text{e}$ is the vapor pressure of the material at the sample temperature and $T$ is the temperature~\cite{knudsen}. The sticking parameter of a material can be looked up in literature. With this, the total deposition rate can then be estimated. In practice since the pressure of the impinging gas is difficult to determine this is difficult to estimate, since it requires precise knowledge on the temperature of the source, that is typically not measured. Instead, usually calibration evaporations are performed for different heating powers and different times to determine the deposition rate for a given setup.
+Where $N$ is the number of gas molecules deposited, $A$ is the surface area, $t$ is time, $\alpha$ is the sticking coefficient, $p$ is the gas pressure of the impinging gas, $m$ is the mass of a single particle, $k_\text{B}$ is the Boltzmann constant, $p_\text{e}$ is the vapor pressure of the material at the sample temperature and $T$ is the temperature~\cite{knudsen}. The sticking parameter of a material can be looked up in literature. With this, the total deposition rate can then be estimated. In practice since the pressure of the impinging gas is difficult to determine this is difficult to estimate, since it requires precise knowledge on the temperature of the source, that is typically not measured. Instead, usually calibration evaporations are performed for different heating powers and different times to determine the deposition rate for a given setup.
 
 Comparing e-beam evaporation with so-called sputtering of material onto a surface, it offers more controlled deposition~\cite{Vapor_depo_princ}. In sputtering, high energy particles are produced hitting the sample, which can lead to local roughening~\cite{sputter_damage}.
-In contrast to thermal evaporation, where the source is typically heated by Joule heating from a resistive current, higher temperatures are available with e-beam evaporation. This is required, e.g. for \ce{Nb}~\cite{tungsten_evaporation}.
+In contrast to thermal evaporation, where the source is typically heated by Joule heating from a resistive current, higher temperatures are available with e-beam evaporation. This is required, e.g.\ for \ce{Nb}~\cite{tungsten_evaporation}.
 
 \section{Molecular beam evaporation chamber}
 \begin{figure}[H]
@@ -219,7 +219,7 @@ With this one gets that for each unit of distance the motor moves, the screws mo
 	\label{fig:calibration_example}
 \end{figure}
 
-A linear fit is performed for the given data. The slope gives the step size. Results are shown in Figure \ref{fig:calibration_example}. After each set of steps it has to be ensured, that the mask frame is not tilted. Excessive tilt will affect the step size. After each set of steps, it is essential to verify that the mask frame is not tilted, as excessive tilt can affect the step size. Additionally, care must be taken to avoid exceeding the movement range of the piezos, detaching the Nd magnets from the frame, or causing the sapphire prism to fall out of the motor. The measurement has to be done for both driving directions separately, since the step sizes will be different. Indeed, in Fig. \ref{fig:calibration_example} shows that the positive retract direction has consistently larger step sizes. Furthermore, the Z3 motor displays a larger difference in step size between approach and retract compared to the other two motors. \\
+A linear fit is performed for the given data. The slope gives the step size. Results are shown in Figure \ref{fig:calibration_example}. After each set of steps it has to be ensured, that the mask frame is not tilted. Excessive tilt will affect the step size. After each set of steps, it is essential to verify that the mask frame is not tilted, as excessive tilt can influence the step size. Additionally, care must be taken to avoid exceeding the movement range of the piezos, detaching the Nd magnets from the frame, or causing the sapphire prism to fall out of the motor. The measurement has to be done for both driving directions separately, since the step sizes will be different. Indeed, in Fig. \ref{fig:calibration_example} shows that the positive retract direction has consistently larger step sizes. Furthermore, the Z3 motor displays a larger difference in step size between approach and retract compared to the other two motors. \\
 
 To account for the varying step sizes between the three motors, different voltage pulses can be applied to each motor. A calibration is necessary to determine the relationship between step size and voltage, which is illustrated in Figure \ref{fig:calibration_voltage}. \\
 
@@ -239,7 +239,7 @@ step size/V is larger by $\approx 0.3$. This calibration is used to compensate m
 The motor behavior exhibits a linear relationship with voltage, but the slope of this relationship varies between motors. An optimal point, where all motors respond similarly, is found at $80$ V. Notably, the Z3 motor exhibits a significantly different slope, with a step size per Volt that is approximately $0.3$ larger than the other motors. This calibration is used to compensate for variations in motor step size, which helps to prevent tilting. To achieve this, different voltage pulses need to be applied to the various motor channels. The electronics required for this purpose are discussed in more detail in Chapter \ref{sec:walker}.\\
 
 \subsection{Optical alignment}
-The capacitance sensors cannot be used for alignement when the mask sample distance is very large, since the signal is noise dominated at that point. Therefore one starts by aligning optically, down to the optical limit ($25$ {\textmu}m) of this setup. \\
+The capacitance sensors cannot be used for alignement when the mask sample distance is very large, since the signal is noise dominated at that point. Therefore, one starts by aligning optically, down to the optical limit ($25$ {\textmu}m) of this setup. \\
 To do that the sample has to be aligned so that its surface normal
 is perpendicular to the camera's view direction. No sample surface can be
 seen in camera view. No upwards tilt can be observed when viewing the side
@@ -247,7 +247,7 @@ edge of the sample, and the upper side of the sample holder, cannot be observed.
 
 In Fig. \ref{fig:camera_alignment_example_low}, the surface of the sample can be seen, which means the camera is not in line
 with the sample, but rather positioned too far up or tilted upward. In Fig. \ref{fig:camera_alignment_example_high}, one
-can see the surface of the sample holder. Additionally, the side of the sample is tilted upwards in the image. The camera is positioned too high up or tilted downward.
+can see the surface of the sample holder. Additionally, the side of the sample is tilted upwards in the image. The camera is positioned too high up or tilted downward. An example of good camera alignment is shown in Figure \ref{fig:camera_alignment_example_good}
 \\
 
 \begin{figure}[H]
@@ -384,9 +384,9 @@ where the mask is touching the sample.}
     \label{fig:approach_curve_example}
 \end{figure}
 
-A typical approach curve, from a measured distance of $25 \pm 5$ {\textmu}m to full contact is shown in Figure \ref{fig:approach_curve_example_cap}. \\
+A typical approach curve, from a measured distance of $25 \pm 5$ {\textmu}m to full contact is shown in Figure \ref{fig:approach_curve_example_cap}. The corresponding $dC$ curve \\
 
-Typically, the mask initially contacts the sample at a single point or edge, as illustrated in Figure \ref{fig:approach_curve_example_first}.This initial contact restricts the movement of the mask on the corresponding motor, resulting in a change in the step size. Consequently, the slope of the approach curve changes. \\
+Typically, the mask initially contacts the sample at a single point or edge, as illustrated in Figure \ref{fig:approach_curve_example_first}. This initial contact restricts the movement of the mask on the corresponding motor, resulting in a change in the step size. Consequently, the slope of the approach curve changes. \\
 If the mask subsequently contacts the sample at another point (Figure \ref{fig:approach_curve_example_second}), the step size decreases again, which is labeled as "Second contact" in Figure \ref{fig:approach_curve_example_cap}. \\
 As the sample is approached further, the mask's movement becomes limited to the axis that aligns the mask with the sample perfectly (Figure \ref{fig:approach_curve_example_full}). At this point, the capacitance value remains constant, as the distance between the mask and sample can no longer be reduced. This point is marked as "Full contact" in Figure \ref{fig:approach_curve_example_cap}. \\
 
@@ -403,7 +403,7 @@ As the sample is approached further, the mask's movement becomes limited to the
 %decreased. This point is labeled "Full contact" in Figure
 %\ref{fig:approach_curve_example_cap}. \\
 
-The difference in capacitance increases monotonically. Upon any contact the step size changes and the $dC$ curve gives a local maximum. This can be used to define a stop condition. A value $5-10$ steps before the peak~\cite{Beeker} is determined in a calibration measurement to full contact. When this value is reached in any subsequent approach the approach is stopped. 
+The difference in capacitance increases monotonically. Upon any contact the step size changes and the $dC$ curve (example Fig. \ref{fig:approach_curve_example_cap_diff}) gives a local maximum. This can be used to define a stop condition. A value $5-10$ steps before the peak~\cite{Beeker} is determined in a calibration measurement to full contact. When this value is reached in any subsequent approach the approach is stopped. 
 %How close the value can be chosen to the peak depends on the noise of the signal. \\
 %Another way of looking at this is to consider the differences between $2$ capacitance values:
 %\begin{equation}
diff --git a/chap03.tex b/chap03.tex
index c842c4502cff02313f7db1314582a7069d0ceae4..74416a77f377e4a7235b73483387af048da79e97 100644
--- a/chap03.tex
+++ b/chap03.tex
@@ -79,8 +79,12 @@ Both approach and retract show heavy aliasing artifacts, which could lead to the
 
 The KIM001 device has a voltage parameter that supposedly controls the output signal voltage amplitude, with a specified range of $85$ V to $125$ V. However, testing revealed that this parameter does not actually control the output voltage. When set to $125$ V, the output voltage amplitude exceeds $150$ V, with a variability of $\pm25$ V. Conversely, setting the voltage parameter to $80$ V results in an output voltage amplitude of approximately $80$ V.
 
-Regardless of the set voltage, the signal drifts back to around $118$ V within a few hundred steps. This behavior is illustrated in Figure (\ref{fig:kim0001_voltage_behaviour}). Due to this inconsistent and uncontrolled voltage output, the KIM001 device is unsuitable for our purposes, particularly since variable voltage control is sometimes necessary for operating the Mask Aligner. Additionally, an inconsistency in peak shape was observed in the signal after $100$ steps, despite no changes in settings during data collection.
-Due to the aforementioned behaviors of the KIM001 device, the device was found to be incapable of providing driving pulses for the Mask Aligner and was thus deprecated.
+%Regardless of the set voltage, the signal drifts back to around $118$ V within a few hundred steps. This behavior is illustrated in Figure (\ref{fig:kim0001_voltage_behaviour}). Due to this inconsistent and uncontrolled voltage output, the KIM001 device is unsuitable for our purposes, particularly since variable voltage control is sometimes necessary for operating the Mask Aligner. Additionally, an inconsistency in peak shape was observed in the signal after $100$ steps, despite no changes in settings during data collection.
+%Due to the aforementioned behaviors of the KIM001 device, the device was found to be incapable of providing driving pulses for the Mask Aligner and was thus deprecated.
+
+The signal consistently drifts back to approximately $118$ V within a few hundred steps, regardless of the set voltage. This behavior is illustrated in Figure (\ref{fig:kim0001_voltage_behaviour}). The KIM001 device's inconsistent and uncontrolled voltage output makes it unsuitable for our needs, particularly since variable voltage control is sometimes required for operating the Mask Aligner. Furthermore, an inconsistency in peak shape was observed in the signal after $100$ steps, despite no changes in settings during data collection. \\
+
+As a result of these issues, the KIM001 device was deemed incapable of providing reliable driving pulses for the Mask Aligner and was subsequently deprecated.
 
 \begin{figure}[H]
     \centering
diff --git a/chap04.aux b/chap04.aux
index 447600c33122220bac96d8db6f6f9ef665221665..90ca2fbedacde79687159f93833ffcad6926eb5d 100644
--- a/chap04.aux
+++ b/chap04.aux
@@ -34,8 +34,8 @@
 \newlabel{sub@fig:solder_anchors_examples_glue_bottom}{{c}{36}{\relax }{figure.caption.31}{}}
 \newlabel{fig:solder_anchors_examples_AlO}{{2.3d}{36}{\relax }{figure.caption.31}{}}
 \newlabel{sub@fig:solder_anchors_examples_AlO}{{d}{36}{\relax }{figure.caption.31}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {2.3}{\ignorespaces Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref  {fig:solder_anchors_examples_shear_01}) initial state of a solder ceramic interfering with the prism. (\subref  {fig:solder_anchors_examples_shear_02}) solder ceramic from before after some of the solder was carefully taken off. (\subref  {fig:solder_anchors_examples_glue_bottom}) a solder anchor attached to the bottom of a previously used solder ceramic. (\subref  {fig:solder_anchors_examples_AlO}) replacement of a solder ceramic with a thinner \ce {Al2O3} plate. }}{36}{figure.caption.31}\protected@file@percent }
-\newlabel{fig:solder_anchors_examples}{{2.3}{36}{Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref {fig:solder_anchors_examples_shear_01}) initial state of a solder ceramic interfering with the prism. (\subref {fig:solder_anchors_examples_shear_02}) solder ceramic from before after some of the solder was carefully taken off. (\subref {fig:solder_anchors_examples_glue_bottom}) a solder anchor attached to the bottom of a previously used solder ceramic. (\subref {fig:solder_anchors_examples_AlO}) replacement of a solder ceramic with a thinner \ce {Al2O3} plate}{figure.caption.31}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {2.3}{\ignorespaces Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref  {fig:solder_anchors_examples_shear_01}) initial state of a solder ceramic interfering with the prism. (\subref  {fig:solder_anchors_examples_shear_02}) solder ceramic from before after solder was removed. (\subref  {fig:solder_anchors_examples_glue_bottom}) a solder anchor attached to the bottom of a previously used solder ceramic. (\subref  {fig:solder_anchors_examples_AlO}) replacement of a solder ceramic with a thinner \ce {Al2O3} plate. }}{36}{figure.caption.31}\protected@file@percent }
+\newlabel{fig:solder_anchors_examples}{{2.3}{36}{Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref {fig:solder_anchors_examples_shear_01}) initial state of a solder ceramic interfering with the prism. (\subref {fig:solder_anchors_examples_shear_02}) solder ceramic from before after solder was removed. (\subref {fig:solder_anchors_examples_glue_bottom}) a solder anchor attached to the bottom of a previously used solder ceramic. (\subref {fig:solder_anchors_examples_AlO}) replacement of a solder ceramic with a thinner \ce {Al2O3} plate}{figure.caption.31}{}}
 \@writefile{toc}{\contentsline {section}{\numberline {2.4}Piezo regluing}{37}{section.2.4}\protected@file@percent }
 \newlabel{sec:piezo_reglue}{{2.4}{37}{Piezo regluing}{section.2.4}{}}
 \newlabel{fig:Z3_reglue_process_off}{{2.4a}{37}{\relax }{figure.caption.32}{}}
@@ -66,7 +66,7 @@
 \@writefile{toc}{\contentsline {subsection}{\numberline {2.5.2}Small capacitance stack}{41}{subsection.2.5.2}\protected@file@percent }
 \@writefile{lof}{\contentsline {figure}{\numberline {2.9}{\ignorespaces The measured capacitance values for the piezo stacks of the motor Z3. }}{42}{figure.caption.37}\protected@file@percent }
 \newlabel{fig:Z3_weaker_stack}{{2.9}{42}{The measured capacitance values for the piezo stacks of the motor Z3}{figure.caption.37}{}}
-\@writefile{toc}{\contentsline {section}{\numberline {2.6}Feed through cabling optimizations}{42}{section.2.6}\protected@file@percent }
+\@writefile{toc}{\contentsline {section}{\numberline {2.6}Feedthrough cabling optimizations}{42}{section.2.6}\protected@file@percent }
 \newlabel{fig:Feedthrough_Repairs_left}{{2.10a}{43}{\relax }{figure.caption.38}{}}
 \newlabel{sub@fig:Feedthrough_Repairs_left}{{a}{43}{\relax }{figure.caption.38}{}}
 \newlabel{fig:Feedthrough_Repairs_right}{{2.10b}{43}{\relax }{figure.caption.38}{}}
diff --git a/chap04.tex b/chap04.tex
index f4becdf6340a480e9913735c6167bfc0e70a9c25..6fb8bcc0434a03e2c6fe94c5a81c756b21ebcc92 100644
--- a/chap04.tex
+++ b/chap04.tex
@@ -2,7 +2,7 @@
 \chapter{Mask Aligner repairs and optimizations}
 \section{Overview}
 
-The Mask Aligner was originally constructed in 2015 as part of Tim Olscchewski's master thesis~\cite{Olschewski}. However, over time, several issues have arisen that have compromised its performance. To address these problems and prevent further deterioration, repairs were necessary on multiple piezo motor stacks. The following chapter will provide a detailed account of the repairs and optimizations undertaken to restore and improve the functionality of the Mask Aligner.
+The Mask Aligner was originally constructed in 2015 as part of Tim Olschewski's master thesis~\cite{Olschewski}. However, over time, several issues have arisen that have compromised its performance. To address these problems and prevent further deterioration, repairs were necessary on multiple piezo motor stacks. The following chapter will provide a detailed account of the repairs and optimizations undertaken to restore and improve the functionality of the Mask Aligner.
 
 %The Mask Aligner was built in 2015, during the master thesis of Tim Olscchewski~\cite{Olschewski}. Since then some problems had developed with the Mask Aligner that limited its performance. In order to alleviate and prevent further problems, repairs had to be performed on several of the piezo motor stacks. The following chapter will detail the repairs and optimizations that were performed on the Mask Aligner. 
 
@@ -18,7 +18,7 @@ The Mask Aligner was originally constructed in 2015 as part of Tim Olscchewski's
 		\caption{}
 		\label{fig:Repair_Diagram_image}
 	\end{subfigure}
-    \caption{(\subref{fig:Repair_Diagram_diagram}) diagram of front view of a single piezo motor with associated nomenclature. Front plate is turned around and moved to the side. (\subref{fig:Repair_Diagram_image}) a roughly corresponding image as a photo of the Mask Aligner. The lower right solder anchor is detached in the image and the lower left solder anchor is bridged with a technique discussed in Section \ref{ch:solder_anchors}}
+    \caption{(\subref{fig:Repair_Diagram_diagram}) diagram of front view of a single piezo motor with associated nomenclature. Front plate is turned around and moved to the side. (\subref{fig:Repair_Diagram_image}) a roughly corresponding image as a photo of the Mask Aligner. The lower right solder anchor is detached in the image and the lower left solder anchor is bridged with a technique discussed in Section \ref{ch:solder_anchors}}.
     \label{fig:Repair_Diagram}
 \end{figure}
 
@@ -42,7 +42,7 @@ The terminology used to describe the piezo motors in the following sections is i
 \subsection{UHV compatible Soldering}
 When soldering components for UHV environments, it is essential to use solder tins that are specifically cleared for UHV use.
 To prevent damage to surrounding components, they must be shielded from potential flux splashes during the soldering process.
-After soldering, it is crucial to thoroughly clean the area to prevent outgassing and short-circuiting from stray flux. The following steps should be followed:
+After soldering, it is crucial to clean the area to prevent outgassing and short-circuiting from stray flux. The following steps should be followed:
 \begin{enumerate}
 	\item Clean the soldered surface thoroughly using laboratory cleaning swabs and a mixture of demineralized water and laboratory detergent. Rinse the surface after cleaning.
 	\item Repeat the previous step with demineralized water without any detergent.
@@ -51,7 +51,7 @@ After soldering, it is crucial to thoroughly clean the area to prevent outgassin
 \end{enumerate}
 
 \section{Soldering anchors} \label{ch:solder_anchors}
-The original soldering anchor points on the Mask Aligner consisted of small ($2$ mm x $2$ mm x $6$ mm) \ce{Al2O3}  ceramic pieces with a pre-coated copper piece glued to them using non-conductive EPO-TEK H70E.This copper piece was coated with solder, allowing cables from the piezo motors to be soldered directly to the anchor point. This design enabled the use of shorter cables and facilitated a cleaner cable routing. The ceramic piece was then attached to the surface of the Mask Aligner using the same EPO-TEK H70E glue. \\
+The original soldering anchor points on the Mask Aligner consisted of small ($2$ mm x $2$ mm x $6$ mm) \ce{Al2O3}  ceramic pieces with a pre-coated copper piece glued to them using non-conductive EPO-TEK H70E. This copper piece was coated with solder, allowing cables from the piezo motors to be soldered directly to the anchor point. This design enabled the use of shorter cables and facilitated a cleaner cable routing. The ceramic piece was then attached to the surface of the Mask Aligner using the same EPO-TEK H70E glue. \\
 
 EPO-TEK H70E is typically cured at $150^\circ$C for at least one hour. However, this temperature requirement posed a challenge for repairs on the Mask Aligner, as the piezo stacks depolarize at temperatures near $150^\circ$C. Additionally, it was difficult to heat the glue locally to $150^\circ$C without affecting the surrounding components. \\
 As a result, an alternative glue was sought. Torr Seal was identified as a suitable replacement, offering the necessary qualities for the application. It is a two-component epoxy that can cure at room temperature and meets UHV outgassing requirements. However, Torr Seal has some limitations: it reaches its flash point at $175^\circ$C, which means that soldering on components affixed with Torr Seal requires caution to avoid deterioration from prolonged heat exposure. Furthermore, Torr Seal is not suitable for use in extremely low-temperature environments, as it cannot operate below $-45^\circ$C. \\
@@ -86,8 +86,8 @@ Over time, the glue on some soldering anchors deteriorated, causing the solder d
 
 In order to optimize this behavior, the following 3 actions are possible:
 \begin{itemize}
-	\item Reducing the size of the solder joint on the anchor until it no longer interferes. This often requires re-soldering the respective cable, as carving away material without disconnecting the cable can be difficult. This method is used when the anchor has not lost adhesion to the MA body. This is pictured in Figure (\ref{fig:solder_anchors_diagram_SmallerDot}).
-	\item Replace the soldering anchor with a $1$ mm \ce{Al2O3} thick plate.This allows for a larger solder dot before interference occurs. This procedure is used when the solder ceramic is no longer securely attached to the Mask Aligner body (\ref{fig:solder_anchors_diagram_AlO}). 
+	\item Reducing the size of the solder joint on the anchor until it no longer interferes. This often requires re-soldering the respective cable, as carving away material without disconnecting the cable can be difficult. This method is used when the anchor has not lost adhesion to the MA body. It is pictured in Figure (\ref{fig:solder_anchors_diagram_SmallerDot}).
+	\item Replace the soldering anchor with a 1 mm thick plate of \ce{Al2O3}. This procedure is applied when the solder ceramic is no longer securely attached to the Mask Aligner body (\ref{fig:solder_anchors_diagram_AlO}). 
 	\item  Gluing the soldering anchor to the top or bottom side of the ceramic. It is essential to ensure the glue layer between the Mask Aligner walls and the anchor is thick enough for proper insulation. Although this solution is not ideal, it was used as a quick optimization, allowing the functional solder anchor to be reused without detaching all cables. This is shown in Figure (\ref{fig:solder_anchors_diagram_GlueTop}).
 \end{itemize}
 
@@ -118,11 +118,11 @@ In order to optimize this behavior, the following 3 actions are possible:
         \caption{}
         \label{fig:solder_anchors_examples_AlO}
     \end{subfigure}
-    \caption{Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref{fig:solder_anchors_examples_shear_01}) initial state of a solder ceramic interfering with the prism. (\subref{fig:solder_anchors_examples_shear_02}) solder ceramic from before after some of the solder was carefully taken off. (\subref{fig:solder_anchors_examples_glue_bottom}) a solder anchor attached to the bottom of a previously used solder ceramic. (\subref{fig:solder_anchors_examples_AlO}) replacement of a solder ceramic with a thinner \ce{Al2O3} plate. }
+    \caption{Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref{fig:solder_anchors_examples_shear_01}) initial state of a solder ceramic interfering with the prism. (\subref{fig:solder_anchors_examples_shear_02}) solder ceramic from before after solder was removed. (\subref{fig:solder_anchors_examples_glue_bottom}) a solder anchor attached to the bottom of a previously used solder ceramic. (\subref{fig:solder_anchors_examples_AlO}) replacement of a solder ceramic with a thinner \ce{Al2O3} plate. }
     \label{fig:solder_anchors_examples}
 \end{figure}
 
-Examples of the various measures taken on the Mask Aligner can be seen in Figure \ref{fig:solder_anchors_examples}. All motors were inspected for soldering anchor points that could potentially interfere with the prism, and corrective action was taken for all problematic ceramics. For instance, a problematic anchor is shown in Figure \ref{fig:solder_anchors_examples_shear_01}, and the result after removing some of the solder is shown in Figure \ref{fig:solder_anchors_examples_shear_02}. \\
+Examples of the various measures taken on the Mask Aligner can be seen in Figure \ref{fig:solder_anchors_examples}. All motors were inspected for soldering anchor points that could potentially interfere with the prism, and corrective action was taken for all problematic ceramics. For instance, a problematic anchor is shown in Figure \ref{fig:solder_anchors_examples_shear_01}, and the result after removing solder is shown in Figure \ref{fig:solder_anchors_examples_shear_02}. \\
 
 Following these repairs, the prisms no longer got stuck during movement and could move freely within their full range of motion. However, not all ceramics were replaced, and it is likely that future problems will arise due to glue deterioration. To ensure reliable operation, it is recommended that all solder ceramics be replaced, although this is beyond the scope of this thesis. \\
 
@@ -228,7 +228,7 @@ During testing of the newly fabricated front plate, the performance of motor Z3
     \label{fig:Front_plate_repair}
 \end{figure}
 
-The new cables were bend and glued in place with Torr Seal to avoid interfering with the sample/mask insertion path and the camera.
+The new cables were bent and glued in place with Torr Seal to avoid interfering with the sample/mask insertion path and the camera.
 
 \subsection{Small capacitance stack}
 During the investigation of the Z3 motor, the capacitance values of the piezo stacks were measured. Notably, the motor that was reglued (Section \ref{sec:piezo_reglue}) had a lower capacitance value ($1.05$ nF) compared to the surrounding piezo stacks, with a difference of approximately $0.4$ nF, which is equivalent to the capacitance of a single piezo layer. The measured capacitances of all the piezo stacks are shown in Figure \ref{fig:Z3_weaker_stack}. It's worth noting that the two piezo stacks with a capacitance of $1.62$ nF were measured together, as they were always wired in parallel, and the same applies to the plate stacks.
@@ -247,7 +247,7 @@ These findings suggest that one of the piezo layers may have depolarized, which
     \label{fig:Z3_weaker_stack}
 \end{figure}
 
-\section{Feed through cabling optimizations}
+\section{Feedthrough cabling optimizations}
 As a final optimization step the cables for the capacitance signals were examined. They are coaxial cables with a shielding to prevent stray capacitances. Of the four cables only one shielding was grounded on the feedthrough side. The shielding was instead grounded on the Mask Stage side, connecting it to the Mask Aligner Body. The length also made insertion into UHV more difficult since the cable could easily be caught behind the copper gaskets. Additionally, a significant portion of the shielding was stripped, leaving the cable unnecessarily exposed.
 
 \begin{figure}[H]
diff --git a/chap05.tex b/chap05.tex
index fc491d2a2f05a0a438f8ab0243d6975e4050a782..bcc720a3a2b795446c63f1a554c35bb64efcd190 100644
--- a/chap05.tex
+++ b/chap05.tex
@@ -109,7 +109,7 @@ Line cuts close to the line along which the tilt of the dots points were obtaine
    \end{cases}
 \end{equation}
 
-where $r$ is the radius of the dot, $b$ is an offset from $0$, $\mu$ is the midpoint of the dot, $h$ is the height of the dot and $\sigma_s$ and $\sigma_l$ are the two different penumbras. This fit function allows the determination of the height, radius and penumbra of each dot.
+Where $r$ is the radius of the dot, $b$ is an offset from $0$, $\mu$ is the midpoint of the dot, $h$ is the height of the dot and $\sigma_s$ and $\sigma_l$ are the two different penumbras. This fit function allows the determination of the height, radius and penumbra of each dot.
 
 An example is shown in Figure \ref{fig:evaporation_analysis}. In the example, the elliptical shape of the dot, induced by a tilt, can be easily seen in both image and line cut.
  
@@ -358,7 +358,9 @@ Another possibility is that the oscillation is not harmonic. Instead of using th
 In the AFM image the surface of the outer is rougher than the surface of the inner circle. On average, the roughness is $1.7 \pm 0.4$ times higher. This could be due to particles first forming larger grains, which is common for PVD~\cite{grain_growth}. With larger layer height this effect typically becomes less visible. \\
 It is unlikely that the vibrations causing the deformation and tilt are highly anharmonic. However, due to the growth of thin films occurring near grain boundaries, the actual growth of Pb on Si is concentrated at the extreme positions of the oscillation. \\
 
-The grain growth can be be modeled in the simulation by penalizing deposition for pixels, where no material has been deposited previously. The probability to deposit on an empty surface is a user controlled parameter called "first\_layer\_depo\_prob". It specifies the probability with which a particle hitting the sample is deposited, when no material has previously been deposited on the relevant pixel. \\
+%The grain growth can be modeled in the simulation by penalizing deposition for pixels, where no material has been deposited previously. The probability to deposit on an empty surface is a user controlled parameter called "first\_layer\_depo\_prob". It specifies the probability with which a particle hitting the sample is deposited, when no material has previously been deposited on the relevant pixel. \\
+
+The grain growth can be modeled in the simulation by penalizing deposition on pixels where no material has been deposited previously. This is achieved through a user-controlled parameter called "first\_layer\_depo\_prob", which represents the probability of a particle being deposited on an empty surface. Specifically, it defines the likelihood that a particle hitting the sample will be deposited on a pixel where no material has been deposited before.
 
 \begin{figure}[H]
     \centering
@@ -403,8 +405,8 @@ The current way of implementing the simulation using Godot allowed for very quic
 
 In order to improve performance, a dedicated ray tracing engine with support for threading could give significant performance improvements. Parallel deployment on the \textbf{G}raphics \textbf{P}rocessing \textbf{U}nit (GPU) using \textbf{A}pplication \textbf{P}rogramming \textbf{I}nterfaces (APIs) like for example CUDA or OpenCL could improve this further. This would most likely shorten generation times by several orders of magnitude. \\
 
-Godot uses its own units for length measurement, which are stored as $32$-bit floating point numbers. For this reason the numbers had to be converted manually from real world units. This was time-consuming and it can potentially cause floating point rounding issues. With a dedicated ray casting engine, real world units could be used and the accuracy of the simulation could be improved by using higher precision floating point numbers. \\
+Godot uses its own units for length measurement, which are stored as $32$-bit floating point numbers. For this reason the numbers had to be converted manually from real world units. This was time-consuming, and it can potentially cause floating point rounding issues. With a dedicated ray casting engine, real world units could be used and the accuracy of the simulation could be improved by using higher precision floating point numbers. \\
 
 \subsection{Final Remark}
 
-The results of the simulation show that a x-y-z vibrational displacement with a component of vibrational "bending" simulated as a strong tilt can explain the shape of the penumbra obtained in the AFM, and that its peak to peak amplitude is within the expected range for this system. It shows that the sharper penumbra edge ($\approx 60$ nm) is the penumbra that one would obtained had there been no vibrational influence on the experiment. This shows that the Mask Aligner is capable of creating sharp edges. \\
\ No newline at end of file
+The results of the simulation show that a x-y-z vibrational displacement with a component of vibrational "bending" simulated as a strong tilt can explain the shape of the penumbra obtained in the AFM, and that its peak to peak amplitude is within the expected range for this system. It shows that the sharper penumbra edge ($\approx 60$ nm) is the penumbra that one would obtain had there been no vibrational influence on the experiment. This shows that the Mask Aligner is capable of creating sharp edges. \\
\ No newline at end of file
diff --git a/pdfa.xmpi b/pdfa.xmpi
index a7f6e47ea416171d3b57d82ffe8dbfe4facf985b..35862beb7862d8ae4c1995a097b7047928c3cfd9 100644
--- a/pdfa.xmpi
+++ b/pdfa.xmpi
@@ -73,15 +73,15 @@
   </rdf:Description> 
   <rdf:Description rdf:about="" xmlns:xmp="http://ns.adobe.com/xap/1.0/"> 
    <xmp:CreatorTool>LaTeX with hyperref</xmp:CreatorTool> 
-   <xmp:ModifyDate>2024-10-23T16:12:31+02:00</xmp:ModifyDate> 
-   <xmp:CreateDate>2024-10-23T16:12:31+02:00</xmp:CreateDate> 
-   <xmp:MetadataDate>2024-10-23T16:12:31+02:00</xmp:MetadataDate> 
+   <xmp:ModifyDate>2024-10-28T17:34:13+01:00</xmp:ModifyDate> 
+   <xmp:CreateDate>2024-10-28T17:34:13+01:00</xmp:CreateDate> 
+   <xmp:MetadataDate>2024-10-28T17:34:13+01:00</xmp:MetadataDate> 
   </rdf:Description> 
   <rdf:Description rdf:about="" xmlns:xmpRights = "http://ns.adobe.com/xap/1.0/rights/"> 
   </rdf:Description> 
   <rdf:Description rdf:about="" xmlns:xmpMM="http://ns.adobe.com/xap/1.0/mm/"> 
    <xmpMM:DocumentID>uuid:C8CFC28F-88E1-7995-E9AD-F6D12EAD346B</xmpMM:DocumentID> 
-   <xmpMM:InstanceID>uuid:61FEB438-9624-668B-C11C-4E915CB7788F</xmpMM:InstanceID> 
+   <xmpMM:InstanceID>uuid:6C8DD488-6DA7-9820-FB42-6FF8600645D7</xmpMM:InstanceID> 
   </rdf:Description> 
  </rdf:RDF> 
 </x:xmpmeta> 
diff --git a/thesis.bbl b/thesis.bbl
index d7f67acea2dad8cf91ff636eb2d187f771ff20f6..5f03553a2eb3fbcc78b7f40ba703530c72afea83 100644
--- a/thesis.bbl
+++ b/thesis.bbl
@@ -88,6 +88,25 @@ T.~Takaai, ``{T}he {E}lectron {B}eam {M}elting of {T}ungsten (the electron beam
   melting of refractory metals (viii)),'' \emph{Journal of the Japan Institute
   of Metals}, vol.~30, no.~11, pp. 1027--1031, 1966.
 
+\bibitem{Mask_Aligner}
+\BIBentryALTinterwordspacing
+P.~Bhaskar, S.~Mathioudakis, T.~Olschewski, F.~Muckel, J.~R. Bindel,
+  M.~Pratzer, M.~Liebmann, and M.~Morgenstern, ``Mask aligner for ultrahigh
+  vacuum with capacitive distance control,'' \emph{Applied Physics Letters},
+  vol. 112, no.~16, apr 2018. [Online]. Available:
+  \url{http://dx.doi.org/10.1063/1.5022462}
+\BIBentrySTDinterwordspacing
+
+\bibitem{florian_forster}
+F.~Forster, ``Aufbau und {T}est eines {M}olekularstrahlverdampfers,'' Aachen,
+  2009, unpublished, but viewable on the Server of the 2nd institute of physics
+  B.
+
+\bibitem{Beeker}
+J.~Beeker, ``Growth of {P}b islands with the help of an {U}ltrahigh {V}acuum
+  {M}ask {A}ligner,'' Aachen, 2022, unpublished, but viewable on the Server of
+  the 2nd institute of physics B.
+
 \bibitem{afm_physics}
 N.~Li, Z.~Li, H.~Ding, S.~Ji, X.~Chen, and Q.-K. Xue, ``An atomic force
   microscopy study of single-layer fese superconductor,'' \emph{Applied Physics
@@ -128,25 +147,19 @@ M.~Bai, F.~Yang, M.~Luysberg, J.~Feng, A.~Bliesener, G.~Lippertz, A.~A. Taskin,
   \url{http://dx.doi.org/10.1103/PhysRevMaterials.4.094801}
 \BIBentrySTDinterwordspacing
 
-\bibitem{Mask_Aligner}
+\bibitem{Simon}
+S.~Mathioudakis, ``{I}nbetriebnahme und {T}est eines {M}ask {A}ligners für
+  {U}ltrahochvakuum,'' Aachen, 2015, unpublished, but viewable on the Server of
+  the 2nd institute of physics B.
+
+\bibitem{grain_growth}
 \BIBentryALTinterwordspacing
-P.~Bhaskar, S.~Mathioudakis, T.~Olschewski, F.~Muckel, J.~R. Bindel,
-  M.~Pratzer, M.~Liebmann, and M.~Morgenstern, ``Mask aligner for ultrahigh
-  vacuum with capacitive distance control,'' \emph{Applied Physics Letters},
-  vol. 112, no.~16, apr 2018. [Online]. Available:
-  \url{http://dx.doi.org/10.1063/1.5022462}
+E.~BAUER, ``Phänomenologische theorie der kristallabscheidung an oberflächen.
+  i,'' \emph{Zeitschrift für Kristallographie - Crystalline Materials}, vol.
+  110, no. 1-6, pp. 372--394, 1958. [Online]. Available:
+  \url{https://doi.org/10.1524/zkri.1958.110.16.372}
 \BIBentrySTDinterwordspacing
 
-\bibitem{florian_forster}
-F.~Forster, ``Aufbau und {T}est eines {M}olekularstrahlverdampfers,'' Aachen,
-  2009, unpublished, but viewable on the Server of the 2nd institute of physics
-  B.
-
-\bibitem{Beeker}
-J.~Beeker, ``Growth of {P}b islands with the help of an {U}ltrahigh {V}acuum
-  {M}ask {A}ligner,'' Aachen, 2022, unpublished, but viewable on the Server of
-  the 2nd institute of physics B.
-
 \bibitem{arduino_datasheet}
 \BIBentryALTinterwordspacing
 Arduino. Arduino {DUE} datasheet. Online; accessed 10-August-2024. [Online].
@@ -164,22 +177,4 @@ Atmel. The {A}tmel | {SMART} {SAM3X/A} series datasheet. Online; accessed
 \bibitem{switch_datasheet}
 \emph{IC SWITCH SPDTX2 1.8OHM 16TSSOP}, Analog Devices Inc., 2016, rev. B.
 
-\bibitem{torr_seal}
-I.~Agilent~Technologies, ``Torr seal data sheet,''
-  \url{https://www.agilent.com/cs/library/datasheets/public/data-sheet-torr-seal-products-5994-5102-en-agilent.pdf},
-  2022, [Accessed 02-10-2024].
-
-\bibitem{Simon}
-S.~Mathioudakis, ``{I}nbetriebnahme und {T}est eines {M}ask {A}ligners für
-  {U}ltrahochvakuum,'' Aachen, 2015, unpublished, but viewable on the Server of
-  the 2nd institute of physics B.
-
-\bibitem{grain_growth}
-\BIBentryALTinterwordspacing
-E.~BAUER, ``Phänomenologische theorie der kristallabscheidung an oberflächen.
-  i,'' \emph{Zeitschrift für Kristallographie - Crystalline Materials}, vol.
-  110, no. 1-6, pp. 372--394, 1958. [Online]. Available:
-  \url{https://doi.org/10.1524/zkri.1958.110.16.372}
-\BIBentrySTDinterwordspacing
-
 \end{thebibliography}
diff --git a/thesis.blg b/thesis.blg
index 718d2c34438a91a8cc95e22e29b982800d325a53..f161954ef44b8ea0d31eb2c727147fe361a81152 100644
--- a/thesis.blg
+++ b/thesis.blg
@@ -10,13 +10,11 @@ A level-1 auxiliary file: preface.aux
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