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Images were taken from~\cite {SEM_image_01} and ~\cite {SEM_image_02}}{figure.caption.15}{}} \citation{self_epitaxy} \@setckpt{chap01}{ -\setcounter{page}{18} +\setcounter{page}{14} \setcounter{equation}{2} \setcounter{enumi}{0} \setcounter{enumii}{0} @@ -77,12 +70,12 @@ \setcounter{subsubsection}{0} \setcounter{paragraph}{0} \setcounter{subparagraph}{0} -\setcounter{figure}{7} +\setcounter{figure}{6} \setcounter{table}{0} \setcounter{section@level}{2} \setcounter{Item}{0} \setcounter{Hfootnote}{0} -\setcounter{bookmark@seq@number}{8} +\setcounter{bookmark@seq@number}{7} \setcounter{parentequation}{0} \setcounter{FancyVerbLine}{0} \setcounter{NAT@ctr}{0} @@ -91,7 +84,7 @@ \setcounter{subfigure}{2} \setcounter{subtable}{0} \setcounter{lstnumber}{1} -\setcounter{@todonotes@numberoftodonotes}{0} +\setcounter{@todonotes@numberoftodonotes}{1} \setcounter{float@type}{8} \setcounter{AM@survey}{0} \setcounter{thm}{0} diff --git a/chap01.tex b/chap01.tex index 87a072a80228d26d2a081559872f65bc461fbd7b..1c4424df9c7c3ee2c1c50f77cd9b6ed54830f2a9 100644 --- a/chap01.tex +++ b/chap01.tex @@ -1,88 +1,75 @@ % !TeX spellcheck = <en-US> -\chapter{Mask Aligner background} \label{ch:} -The Mask Aligner and its Molecular Beam Evaporation chamber are used to create thin films on samples with high accuracy. This chapter will introduce the required background behind the evaporation of thin films on a sample surface, as well as explain the basic evaporation and alignment setup the Mask Aligner uses. +\chapter{Mask Aligner background} \label{ch:background} +The Mask Aligner is used to create thin patterned films on samples with high accuracy. This chapter will introduce the required background behind the evaporation and explain the basic evaporation and alignment setup. \section{Electron beam evaporation} -Electron beam evaporation, also known as \textbf{E}lectron-\textbf{b}eam \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (EBPVD) is a \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (PVD) technique used in vacuum and \textbf{U}ltra \textbf{H}igh \textbf{V}acuum (UHV) conditions, to deposit material onto a substrates surface. +Electron beam evaporation, also known as \textbf{E}lectron-\textbf{b}eam \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (EBPVD) is a \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (PVD) technique that in vacuum or \textbf{U}ltra \textbf{H}igh \textbf{V}acuum (UHV) deposits material onto a substrates surface. \begin{figure}[H] \centering \includegraphics[width=0.5\linewidth]{img/EBeamDep.pdf} - \caption{Schematic diagram of a general E-beam evaporation chamber. The B-field is used to focus the beam onto the source. Alternatively, one can use a filament nearby and put the crucible under positive potential, which will attract the emitted electrons from the filament. The shutter is used to control when the beam can interact with the sample. The funnel is used to focus the vapor beam. } + \caption{Schematic diagram of a general electron beam evaporation chamber. The B-field is used to focus the beam onto the source. The shutter can interrupt the beam directed to the sample. The funnel is used to focus the vapor beam. } \label{fig:e-beam_evap} \end{figure} -The general setup of an electron beam evaporator is seen in Figure \ref{fig:e-beam_evap}. The source material is placed inside a crucible as pellets of ultrapure ($>99$ \%) material. -The crucible is also heated during the evaporation process, in order to prevent the crucible itself from being damaged a material with high melting point has to be chosen. Tungsten with a melting point of 3695 K ~\cite{Tungsten_melt} is usually chosen. Additionally, the crucible usually has to be water cooled to prevent damaging the system. +The setup of an electron beam evaporator is shown in Figure \ref{fig:e-beam_evap}. The source material is placed inside a crucible as pellets of ultrapure ($>99$ \%) material. +The crucible is also heated during the evaporation process, in order to prevent it from being damaged, a material with a high melting point is chosen. Tungsten with a melting point of 3695 K ~\cite{Tungsten_melt} is usually chosen. Additionally, the crucible usually has to be water cooled to avoid outgassing during the evaporation process. -In order to heat the source material locally beyond its boiling point it is hit with a high current electron beam ($\mathcal{O}$($1$ kV)), emitted by either an electron gun or a filament, this beam usually has to be focused using magnetic fields to hit the source material. The highly energetic electrons interact with the atomic nuclei and the atomic electrons of the source material and transfer energy. This energy transfer heats the hit atoms locally and eventually causes the system to reach its melting and then its boiling point, if enough current is applied to give the required heating power. \\ +In order to heat the source material it is hit with a high voltage electron beam ($\mathcal{O}$($1$ kV)), emitted by either an electron gun or a filament. This beam usually is focused using magnetic fields to hit the source material. The highly energetic electrons interact with the atomic nuclei and the atomic electrons of the source material and transfer energy. This energy transfer heats the hit atoms locally and eventually leads to the evaporation of atoms according to its vapor pressure.\\ -The penetration depth of electron with ($<5$ kV) is less than 0.4 $\mu$m (estimated using CASINO Monte Carlo software)~\cite{CASINO} so the heating occurs only very near to the source material's surface. This allows for less energy loss and more controlled evaporation as the crucible and the rest of the system is not heated by the electron beam directly, but only by the radiant heat emitted by the source material.\\ +%The penetration depth of electron with ($<5$ kV) is less than 0.4 $\mu$m (estimated using CASINO Monte Carlo software)~\cite{CASINO} so the heating occurs only very near to the source material's surface. This allows for less energy loss and more controlled evaporation as the crucible and the rest of the system is not heated by the electron beam directly, but only by the radiant heat emitted by the source material.\\ -When the material reaches its boiling point, it forms a vapor, which is directed through a funnel to the sample's surface. The sample is kept at a temperature much colder than the source material's boiling temperature, due to this the material beam will deposit and condense on the substrate's surface forming a thin film. \\ +When the material's vapor pressure exceeds the surrounding environments pressure, a vapor forms. It is directed through a funnel to the sample's surface. The sample is kept at a temperature much colder than the source material's temperature, due to this the material beam will condense on the substrate's surface forming a thin film. \\ -In order to ensure the material beam reaches the sample unperturbed, the mean free path (MFP) of a traveling particle in the environment has to be larger than the distance to the sample's surface. For this reason, high vacuum (HV) (MFP of $10$ cm to $1$ km) or ultra-high vacuum conditions (UHV) (MFP of $1$ km to $10^5$ km) are required for electron beam evaporation. +In order to ensure the material beam reaches the sample in a direct path, the mean free path (MFP) of a traveling particle has to be larger than the distance to the sample's surface. For this reason, high vacuum (HV) (MFP of $10$ cm to $1$ km) or ultra-high vacuum conditions (UHV) (MFP of $1$ km to $10^5$ km) are used. -The deposition rate of the evaporator can be measured using a molecular flux monitor or a quartz balance. The deposition of a material follows the Hertz-Knudsen equation around the equilibrium gas pressure ($p_e$): +The deposition rate of the evaporator can be measured using a molecular flux monitor or a quartz balance. The deposition of a material is described by the Hertz-Knudsen equation: \begin{equation} - \frac{dN}{A dt} = \frac{\alpha (p_e - p)}{\sqrt{2 \pi m k_B T}} + \frac{dN}{A dt} = \frac{\alpha (p_\text{e} - p)}{\sqrt{2 \pi m k_\text{B} T}} \label{eq:hertz_knudsen} \end{equation} -where $N$ is the number of gas molecules deposited, $A$ is the surface area, $t$ is time, $\alpha$ is the sticking parameter, $p$ is the gas pressure of the impinging gas, $m$ is the mass of a single particle, $k_B$ is the Boltzmann constant and $T$ is the temperature~\cite{knudsen}. When the sticking parameter of the material substrate is known the vapor pressure can be obtained from the particle flux measured per area. With this, the total deposition rate can then be estimated. In practice, this is however difficult to estimate, since the pressure of the evaporant gas is difficult to determine. Instead, usually a calibration evaporations are performed for different particle fluxes and different times to determine the deposition rate for a given setup. Since the Hertz-Knudsen equation is linear in gas pressure, this should give a linear dependence. +where $N$ is the number of gas molecules deposited, $A$ is the surface area, $t$ is time, $\alpha$ is the sticking coefficient, $p$ is the gas pressure of the impinging gas, $m$ is the mass of a single particle, $k_\text{B}$ is the Boltzmann constant, $p_\text{e}$ is the vapor pressure of the material at the sample temperature and $T$ is the temperature~\cite{knudsen}. The sticking parameter of a material can be looked up in literature. With this, the total deposition rate can then be estimated. In practice since the pressure of the impinging gas is difficult to determine this is difficult to estimate. Instead, usually calibration evaporations are performed for different heating powers and different times to determine the deposition rate for a given setup. -Some of the advantages that e-beam evaporation has over other techniques such as thermal evaporation or sputtering are that due to the high energy localized heating, materials, which require high temperature to reach their boiling point, like tungsten ($5828$ K)~\cite{Tungsten_evap} or niobium ($5017$ K)~\cite{Tungsten_evap} can be evaporated using e-beam evaporation~\cite{tungsten_evaporation}. The deposition rate can also be controlled with high precision using the current applied to create the electron beam~\cite{Vapor_depo_princ}. \\ -The high energy electron beam is directed directly at the source material and is unlikely to interact with the samples surface, in contrast to for example sputtering, where the high energy particles depositing the material can interact and either implant unwanted material or dislodge substrate material damaging the substrate surface~\cite{sputter_damage}. +Comparing e-beam evaporation with so-called sputtering of material onto a surface, it offers more controlled deposition~\cite{Vapor_depo_princ}. In sputtering, high energy particles are produced hitting the sample, which can lead to local roughening~\cite{sputter_damage}. +In contrast to thermal evaporation, where the source is typically heated by Joule heating, higher temperatures are available with e-beam evaporation. This is required, e.g. for \ce{NB}~\cite{tungsten_evaporation}. -E-beam evaporation offers more control over deposition rate than thermal evaporation, and it is easier to evaporate material which require high evaporation temperatures with e-beam evaporation~\cite{Vapor_depo_princ}. - -In order to control the duration of the evaporation precisely, a shutter is usually included in the evaporation chamber which can be closed or opened to control when the sample is exposed to the vapor beam. This is also needed for improved deposition rate accuracy, since the source material needs to initially heat up when the electron beam is started, which leads to unstable flux at the start of the evaporation. By closing the shutter, this can be avoided. - -\subsection{Mask Aligner lead evaporator} -The electron beam evaporator used for the lead evaporation in the mask aligner chamber was built by Florian Forster in $2009$~\cite{florian_forster}. The crucible of this evaporator is made from tungsten. The evaporator uses a filament placed near the crucible to bombard the material placed inside the crucible with highly energetic electrons. To accomplish this, a high current (up to $1$ kV) is applied between filament and crucible to emit electrons from the filament to the crucible. In addition, the system can be heated with radiative heat from the filament. This is also used to degas the evaporator and to prevent contaminants from settling on the filament, when no evaporation is taking place. The heating element and crucible are surrounded by a copper cylinder, that functions as a heat sink for the system. The heat sink needs to be water cooled to prevent damage to the evaporator. In order to prevent cooling failure, a thermal sensor measures the temperature of the copper cylinder. \\ - - -\begin{figure}[H] - \centering - \includegraphics[width=0.8\linewidth]{img/MA/Evaporator.pdf} - \caption{Solidworks diagram of the evaporator used on the Mask Aligner.} - \label{fig:ma_evap} -\end{figure} - -In order to control the molecular flow, one can change the current applied to the filament or the voltage accelerating the electron beam towards the source. Additionally, the crucible can be shifted on the z-axis closer to or further away from the filament, controlling the amount of heating that is received by the source material. This method of temperature control was unused in this thesis, as the distance was previously optimized already. In order to determine if the applied controls have the desired effect, the current of $\text{Pb}^+$ ions leaving the crucible is measured by a flux monitor positioned at the top of the evaporator, below the shutter, which can be used to open the molecular flow to the mask aligner chamber. A schematic of the evaporator can be seen in Figure \ref{fig:ma_evap}\\ +In order to control the duration of the evaporation, a shutter is usually included. It can be closed or opened to control when the sample is exposed to the vapor beam. This is also needed for improved deposition rate accuracy, since the source material needs to initially heat up when the electron beam is started, which leads to unstable flux at the start of the evaporation. \section{Stencil lithography} -Stencil lithography is a method of depositing patterned structures on a nanometer scale on substrates (sample) using a stencil. The stencil is made of a membrane of \ce{SiN} that is patterned with a lithography process, such as electron beam lithography. Using e-beam lithography masks can be produced at sub micrometer scales \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (PVD) processes are used to deposit material on the substrate's surface, while the mask is placed on top of the sample. The mask protects the substrate from the molecular beam, except in the places where the pattern has been cut into the mask. In this way, the pattern is transferred from the mask to the sample. \\ -Stencil Lithography can also be used for etching where patterns are cut into the substrate's surface, using reactive ion etching, in the places where the mask has been patterned, while the rest of the sample remains protected. \\ -Stencil lithography requires no resist, heat or other chemical treatment and thus protects the substrate from possible contamination or damage that chemicals or heat can cause. Masks can also be reused many times, and the process is relatively simple to use and fast in execution. In stencil lithography, the fabrication speed is only limited by the possible deposition rate of the depositon material and the complexity of applying the mask to the sample and can be on the order of minutes. \\ -While versatile since any pattern can be deposited or etched using stencil lithography, stencil lithography comes with challenges. -Material is also deposited on the masks including in the aperture of the pattern, which reduces the effective aperture over time. This means that while masks can be reused, they cannot be reused indefinitely. -One of the biggest challenges is that in order to get sharp patterns on the substrates surface the mask has ideally to be placed directly on the surface of the sample as otherwise effects resulting from the limited coherence length of the molecular beam used in physical vapor deposition result in a "blurring" of the structures. However, direct placement of the mask on the substrates surface has the potential to contaminate or damage both mask and sample and should be avoided for materials very sensitive to mechanical damage or when measurement of the sample in highly sensitive devices such as \textbf{S}canning \textbf{T}unneling \textbf{M}icroscopes (STMs) is intended. \\ +Stencil lithography is a method of depositing patterned structures on a nanometer scale on substrates (sample) using a stencil. The stencil is typically made of a membrane of \ce{SiN} that is patterned with a lithography process, such as electron beam lithography. Using e-beam lithography, masks can be produced at sub micrometer scales. \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (PVD) processes are used to deposit material, through the mask onto the substrate's surface, while the mask is placed above the sample. The molecular beam only reaches the sample through holes in the mask. In this way, a pattern is transferred from the mask to the sample. \\ +Stencil Lithography can also be used for etching where patterns are carved into the substrate's surface, using reactive ion etching. \\ +Stencil lithography requires no resist or other chemical treatment of the sample and thus protects it from possible contamination. Masks can also be reused many times. The process is relatively simple and fast. In stencil lithography, the fabrication speed is only limited by the possible deposition rate and the complexity of applying the mask to the sample. \\ +While versatile since many patterns can be deposited or etched, stencil lithography comes with challenges. +Material is also deposited on the masks including in the aperture of the mask, which reduces its effective size over time. This means that while masks can be reused, they cannot be reused indefinitely. +One of the biggest challenges is that in order to get sharp patterns on the substrates surface, the mask has to be placed directly on the surface of the sample. Otherwise effects resulting from the aperture of the molecular beam result in a "blurring" of the intended structures. However, direct placement of the mask on the substrates surface can contaminate or damage both mask and sample. It should be avoided when measurements in devices highly sensitive to contaminants such as \textbf{S}canning \textbf{T}unneling \textbf{M}icroscopes (STMs) is intended. \\ -The Mask Aligner is a tool designed to overcome the challenge of sample mask alignment, allowing precise control of mask sample distance. +The Mask Aligner in this work is a tool designed to overcome the challenge of sample mask alignment. It allows precise control of mask sample distance and angle. + +\todo{Here} \subsubsection{Penumbra} -The molecular beam, the evaporator generates, is not a set of perfectly parallel beams, rather it will be a spread of beams at slightly different angles. Its beam spread is determined by the size of the crucible in which the material evaporation takes place, and is $a=5$ mm for the setup found on the Mask Aligner. For the purposes of this explanation, the spread of different molecular beams will be modeled by its two extreme cones of parallel beams, created by the size of the crucible.\\ +The molecular beam, the evaporator generates, is not a set of perfectly parallel beams, rather it will be a spread of beams at slightly different angles. Its aperture is determined by the size of the crucible. It is $a=5$ mm for the setup found on the Mask Aligner. For the purposes of this explanation, the spread can be modeled by two extreme cones (Figure \ref{fig:penumbra_explanation}).\\ -The area where the cones of both beams overlap is called the "umbra" in analogy to the exact same phenomenon in optics. This can be seen in Figure \ref{fig:penumbra_explanation} as the red area. The region where only one of the cones hits the sample, but the other is blocked by the mask, is called the "penumbra". This can be seen as the orange surface in Figure \ref{fig:penumbra_explanation}. Here the evaporated structure is smeared out similar to the edge of a soft shadow. \\ +The area where both beams overlap is called the "umbra" in analogy to the same phenomenon in optics (Figure \ref{fig:penumbra_explanation}, red areas). The region where only one of the cones hits the sample, but the other is blocked by the mask, is called the "penumbra" (Figure \ref{fig:penumbra_explanation}, orange areas). Hence the intended pattern on the sample is smeared out.\\ -The width of the penumbra $p$ is determined by the distance of the beam source to the sample $l$, as with longer length the beams will be less coherent, the size of the crucible $b$ and the distance between mask and sample $d$. Given these parameters the size of the penumbra can be estimated using Figure \ref{fig:penumbra_explanation}, since $l >> a$ the rays coming from the crucible can be assumed to be approximately parallel:\\ +The width of the penumbra $p$ is determined by the distance of the beam source to the sample $l$, as with longer length the beams will be less coherent, the size of the crucible $a$ and the distance between mask and sample $d$. Given these parameters the size of the penumbra can be estimated using Figure \ref{fig:penumbra_explanation}, since $l >> a$ the rays coming from the crucible can be assumed to be approximately parallel:\\ \begin{equation} - \frac{b}{l} \approx \frac{p}{d} \Rightarrow p \approx\frac{db}{l} + \frac{a}{l} \approx \frac{p}{d} \Rightarrow p \approx\frac{da}{l} \end{equation} \begin{figure}[H] \centering \includegraphics[width=0.5\linewidth]{img/Plots/Background/Penumbra_diagramm.pdf} - \caption{Diagram showing the geometrical reason for the creation of a penumbra in the evaporation from a non point source. The crucible is placed at distance $l$ from the mask, and beams emit from either side of the crucible to each side of the hole in the mask. The area where only beams from one side of the crucible hit the sample receives fewer particles, and thus the deposition rate in the area decreases.} + \caption{Diagram showing the geometrical reason for the creation of a penumbra in the evaporation from a non point source. The crucible is placed at distance $l$ from the mask, and beams emit from either side of the crucible to each side of the hole in the mask. The area where only beams from one side of the crucible hit the sample receives fewer particles and is called penumbra.} \label{fig:penumbra_explanation} \end{figure} -Usually when using stencil lithography, it is desirable for the penumbra to be as small as possible. For the use case proposed for the Mask Aligner, a penumbra of $< 100$ nm is required~\cite{bhaskar}. For this reason one tries to minimize the distance between mask and sample, as a certain size is required for the crucible to be able to evaporate lead efficiently and the distance to the beam source cannot be increased indefinitely since the amount of material that gets deposited on the sample falls off with the square of the distance to the sample. For our setup, these quantities are approximately as follows: $b=6$ mm, $l=25$ cm. For a desired penumbra of $< 100$ nm a distance between mask and sample of at most $d=4$ $\mu$m is needed.\\ +Usually when using stencil lithography, it is desirable for the penumbra to be as small as possible. For the use case proposed for the Mask Aligner, a penumbra of $< 100$ nm is required~\cite{Bhaskar}. For this reason one tries to minimize the distance between mask and sample, as a certain size is required for the crucible to be able to evaporate lead efficiently and the distance to the beam source cannot be increased indefinitely since the amount of material that gets deposited on the sample falls off with the square of the distance to the sample. For our setup, these quantities are approximately as follows: $b=6$ mm, $l=25$ cm. For a desired penumbra of $< 100$ nm a distance between mask and sample of at most $d=4$ $\mu$m is needed.\\ \subsubsection{Tilt induced penumbra} -Formerly, the model for the penumbra assumed perfect alignment between mask and sample, but potentially large distance $d$, but what can additionally happen is that the distance on one side of the mask is larger than that on the other side of the mask. +Formerly, the model for the penumbra assumed perfect alignment between mask and sample, but potentially large distance $d$. What can additionally happen is that the distance on one side of the mask is larger than that on the other side of the mask. The mask and the sample also have to be kept parallel as a tilt would result in a large distance on one side $d_2$ even when the other is a much closer $d_1$, which results in $2$ different penumbral lengths $p_1$ and $p_2$ along the major axis of the tilt, an illustration of this can be seen in Figure \ref{fig:penumbra_explanation_tilt_2d}. Along any other axis of the tilt other than the one where the tilt angle is largest, however, this will result in two new distances $d_1 '> d_1$ and $d_2 '< d_2$. This can be continued along a half circle until $d_1 ' = d_2 '$ where we have the situation similar to the aligned case again. Overall, this results in a penumbra, which follows a "half-moon" shape. An illustration of this can be seen in Figure \ref{fig:penumbra_explanation_tilt_sim}.\\ @@ -98,22 +85,20 @@ The mask and the sample also have to be kept parallel as a tilt would result in \caption{} \label{fig:penumbra_explanation_tilt_sim} \end{subfigure} - \caption{A diagram of the evaporation happening with a tilted mask for only one hole (\subref{fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral radii that appear in a cross-section of the evaporation at the tilt angle. (\subref{fig:penumbra_explanation_tilt_sim}) shows a simulated evaporation with large penumbra for a tilt angle of $45^\circ$ the "half-moon" shaped penumbra, that is wider on one side than on the other, can be seen easily. The penumbra in the simulation is exaggerated for demonstration purposes. Program used for simulation is described in Section \ref{sec:simulation}} + \caption{A diagram of the evaporation rays for a tilted mask with only one hole (\subref{fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text{i}}$ that appear in a cross-section. (\subref{fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ$ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ $\mu$m. Program used for simulation is described in Section \ref{sec:simulation}} \label{fig:penumbra_explanation_tilt} \end{figure} Since the evaporation effectively gives a projection of a circle through an aperture, the resulting image is a conical section. If the alignment between mask and sample is perfect the projection will thus give a circle, but if alignment is off the projection will instead be an ellipse. -However, since the samples used for lithography are often very fragile and prone to contamination, hence directly contacting the sample with the mask should be avoided at all cost, while keeping the distance and tilt between the sample and the mask minimal. - \section{Measurement techniques} -For analyzing samples, various techniques can be used. In the following, the techniques used in this thesis and their working principles will be explained. +In the following, the techniques used in this thesis and their working principles will be explained. \subsection{Atomic Force Microscopy} -In order to measure a sample's topography, \textbf{A}tomic \textbf{F}orce \textbf{M}icroscopy uses the \textbf{V}an \textbf{d}er \textbf{W}aals (VdW) forces the atoms of a sample enact upon a small scanning probe tip. Atomic Force Microscopy (AFM) is a microscopy technique that uses the forces on a cantilever that appear near a sample's surface to measure a sample's height characteristics.\\ -A cantilever, which has a small scanning probe tip at its top is suspended above the sample, when the cantilever now comes closer to the sample the tip is either attracted or repulsed by the sample, depending on distance, this causes the cantilever to bend slightly. This setup can be seen in Figure \ref{fig:afm_principle} The cantilever follows Hooke's law $F = kx$ so if $k$ is known in principle the force can be determined from the displacement. The VdW force follows a Lennart Jones potential as seen in Figure \ref{fig:afm_potential}.\\ +In order to measure a sample's topography, \textbf{A}tomic \textbf{F}orce \textbf{M}icroscopy uses the forces between atoms of a sample and a small scanning probe tip. \\ +For that purpose cantilever, which has a small scanning probe tip at its top end is suspended above the sample, when the cantilever now comes closer to the sample the tip is either attracted or repelled by the sample, depending on distance. This causes the cantilever to bend (Figure \ref{fig:afm_principle}). The cantilever roughly follows Hooke's law $F = kx$ such that the force, between sample and tip can be determined from the displacement. Often one approximates this force as a VdW force, that follows a Lennart Jones potential as seen in Figure \ref{fig:afm_potential}.\\ -In order to detect this bending, a laser is directed at the top of the cantilever and reflected to a mirror and then to a four quadrant photodiode, which then sees the bending as a deflection of the laser signal from the middle of the four quadrant sensor. In order to now determine the topography of a sample from the given diode signal, there are various methods that can be used. These methods in this work called modes will be given a short explanation here. +In order to detect this bending, a laser is directed to the top of the cantilever, reflected to a mirror and then to a four quadrant photodiode. The bending as a deflection angle of the laser beam from the middle of the four quadrant sensor. In order to determine the topography of a sample, there are various methods. These methods will be given short explanations next. \begin{figure}[H] \centering diff --git a/chap02.aux b/chap02.aux index 448f81f965cdcc8f1942bc2d438c420367f808c5..dba1803473f377f2501f6c1a71016939e4132e77 100644 --- a/chap02.aux +++ b/chap02.aux @@ -1,115 +1,124 @@ \relax \providecommand\hyper@newdestlabel[2]{} -\@writefile{toc}{\contentsline {chapter}{\numberline {2}Mask Aligner}{18}{chapter.2}\protected@file@percent } +\citation{Mask_Aligner} +\@writefile{toc}{\contentsline {chapter}{\numberline {2}Mask Aligner}{14}{chapter.2}\protected@file@percent } \@writefile{lof}{\addvspace {10\p@ }} \@writefile{lot}{\addvspace {10\p@ }} -\newlabel{fig:mask_aligner_nomenclature_motors}{{2.1a}{18}{\relax }{figure.caption.16}{}} -\newlabel{sub@fig:mask_aligner_nomenclature_motors}{{a}{18}{\relax }{figure.caption.16}{}} -\newlabel{fig:mask_aligner_nomenclature_components}{{2.1b}{18}{\relax }{figure.caption.16}{}} -\newlabel{sub@fig:mask_aligner_nomenclature_components}{{b}{18}{\relax }{figure.caption.16}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.1}{\ignorespaces The nomenclature for the various parts of the Mask Aligner. The four movement axes and their names from the viewport perspective (\subref {fig:mask_aligner_nomenclature_motors}). The various components of the Mask Aligner (\subref {fig:mask_aligner_nomenclature_components}) \textbf {A} carrying frame \textbf {B} piezo stack, \textbf {C} stoppers, \textbf {D} Sliding Rail for x-movement, \textbf {E} sample stage, \textbf {F} sample \textbf {G} sample holder, \textbf {H} Mask Frame, \textbf {I} Mask, \textbf {J} Mask Shuttle, \textbf {K} neodym magnet, \textbf {L} \ce {Al2O3} plate, \textbf {M} \ce {CuBe} spring, \textbf {N} piezo motor front plate, \textbf {O} sapphire prism, \textbf {P} Mask Aligner lower body. In \textcolor {tab_red}{red} the molecular beam path to the mask is displayed.}}{18}{figure.caption.16}\protected@file@percent } -\newlabel{fig:mask_aligner_nomenclature}{{2.1}{18}{The nomenclature for the various parts of the Mask Aligner. The four movement axes and their names from the viewport perspective (\subref {fig:mask_aligner_nomenclature_motors}). The various components of the Mask Aligner (\subref {fig:mask_aligner_nomenclature_components}) \textbf {A} carrying frame \textbf {B} piezo stack, \textbf {C} stoppers, \textbf {D} Sliding Rail for x-movement, \textbf {E} sample stage, \textbf {F} sample \textbf {G} sample holder, \textbf {H} Mask Frame, \textbf {I} Mask, \textbf {J} Mask Shuttle, \textbf {K} neodym magnet, \textbf {L} \ce {Al2O3} plate, \textbf {M} \ce {CuBe} spring, \textbf {N} piezo motor front plate, \textbf {O} sapphire prism, \textbf {P} Mask Aligner lower body. In \textcolor {tab_red}{red} the molecular beam path to the mask is displayed}{figure.caption.16}{}} -\citation{Mask_Aligner} -\@writefile{toc}{\contentsline {section}{\numberline {2.1}Molecular beam evaporation chamber}{20}{section.2.1}\protected@file@percent } -\@writefile{lof}{\contentsline {figure}{\numberline {2.2}{\ignorespaces Circuit diagram of the mask aligner and its associated vacuum system. The system consists of the mask aligner chamber, the main chamber, the Pb evaporator and the AU evaporator. The AU evaporator is attached to the same vacuum system, but is unrelated to the Mask Aligner. The configuration depicted is used for evaporation. The section labeled load lock is a vacuum suitcase and can be detached. The \textcolor {tab_green}{green} path shows the sample/mask extraction and insertion path with the wobble stick. The black arrow shows the molecular beam path from the \ce {Pb} evaporator.}}{20}{figure.caption.17}\protected@file@percent } -\newlabel{fig:mask_aligner_chamber}{{2.2}{20}{Circuit diagram of the mask aligner and its associated vacuum system. The system consists of the mask aligner chamber, the main chamber, the Pb evaporator and the AU evaporator. The AU evaporator is attached to the same vacuum system, but is unrelated to the Mask Aligner. The configuration depicted is used for evaporation. The section labeled load lock is a vacuum suitcase and can be detached. The \textcolor {tab_green}{green} path shows the sample/mask extraction and insertion path with the wobble stick. The black arrow shows the molecular beam path from the \ce {Pb} evaporator}{figure.caption.17}{}} -\@writefile{toc}{\contentsline {section}{\numberline {2.2}Shadow mask alignment}{21}{section.2.2}\protected@file@percent } -\@writefile{toc}{\contentsline {subsection}{\numberline {2.2.1}Motor calibration}{21}{subsection.2.2.1}\protected@file@percent } -\newlabel{fig:screw_firmness_screw_image}{{2.3a}{22}{\relax }{figure.caption.18}{}} -\newlabel{sub@fig:screw_firmness_screw_image}{{a}{22}{\relax }{figure.caption.18}{}} -\newlabel{fig:screw_firmness_plot}{{2.3b}{22}{\relax }{figure.caption.18}{}} -\newlabel{sub@fig:screw_firmness_plot}{{b}{22}{\relax }{figure.caption.18}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.3}{\ignorespaces \subref {fig:screw_firmness_screw_image} shows a frontal view of the motor Z2 marked in red is the screw used for calibration of the motors on the Mask Aligner. \subref {fig:screw_firmness_plot} shows example curves of how the screws of Z2 and Z3 affect the given motor's step size. A point where the 3 motors are in agreement has to be found iteratively. The jumps in signal after certain rotations result from the \ce {CuBe} plate slipping across the winding of the screw at certain spots. }}{22}{figure.caption.18}\protected@file@percent } -\newlabel{fig:screw_firmness}{{2.3}{22}{\subref {fig:screw_firmness_screw_image} shows a frontal view of the motor Z2 marked in red is the screw used for calibration of the motors on the Mask Aligner. \subref {fig:screw_firmness_plot} shows example curves of how the screws of Z2 and Z3 affect the given motor's step size. A point where the 3 motors are in agreement has to be found iteratively. The jumps in signal after certain rotations result from the \ce {CuBe} plate slipping across the winding of the screw at certain spots}{figure.caption.18}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.4}{\ignorespaces Diagram explaining how to derive the deviation of measured step size on the screws near the Z2 and Z3 motors from the actual step size of the motors.}}{23}{figure.caption.19}\protected@file@percent } -\newlabel{fig:calibration_screw_diff_explain}{{2.4}{23}{Diagram explaining how to derive the deviation of measured step size on the screws near the Z2 and Z3 motors from the actual step size of the motors}{figure.caption.19}{}} -\newlabel{fig:calibration_uhv_points_of_interest_z1}{{2.5a}{24}{\relax }{figure.caption.20}{}} -\newlabel{sub@fig:calibration_uhv_points_of_interest_z1}{{a}{24}{\relax }{figure.caption.20}{}} -\newlabel{fig:calibration_uhv_points_of_interest_z2z3}{{2.5b}{24}{\relax }{figure.caption.20}{}} -\newlabel{sub@fig:calibration_uhv_points_of_interest_z2z3}{{b}{24}{\relax }{figure.caption.20}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.5}{\ignorespaces Points of interest for the calibration of the 3 piezo motors ion UHV. (a) shows measurement point \textcolor {tab_green}{green} and object that is chosen for measurement \textcolor {tab_green}{red} for calibration of Z1. (b) shows the same for Z2 and Z3.}}{24}{figure.caption.20}\protected@file@percent } -\newlabel{fig:calibration_uhv_points_of_interest}{{2.5}{24}{Points of interest for the calibration of the 3 piezo motors ion UHV. (a) shows measurement point \textcolor {tab_green}{green} and object that is chosen for measurement \textcolor {tab_green}{red} for calibration of Z1. (b) shows the same for Z2 and Z3}{figure.caption.20}{}} -\newlabel{fig:calibration_uhv_example_driving_z1}{{2.6a}{25}{\relax }{figure.caption.21}{}} -\newlabel{sub@fig:calibration_uhv_example_driving_z1}{{a}{25}{\relax }{figure.caption.21}{}} -\newlabel{fig:calibration_uhv_example_driving_z2}{{2.6b}{25}{\relax }{figure.caption.21}{}} -\newlabel{sub@fig:calibration_uhv_example_driving_z2}{{b}{25}{\relax }{figure.caption.21}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.6}{\ignorespaces Examples showing the measurement of step sizes during driving at the previously specified points of interest. (\subref {fig:calibration_uhv_example_driving_z1}) shows the point of interest of Z1 and in the inset shows an example of how the driving looks after $1000$ approach steps, as well as the measurement. The image before and after are superimposed. (\subref {fig:calibration_uhv_example_driving_z2}) shows a measurement of the screw at Z2. The inset shows the measurements over an image of the final state after driving $1000$ steps in approach and then $1000$ steps in retract.}}{25}{figure.caption.21}\protected@file@percent } -\newlabel{fig:calibration_uhv_example_driving}{{2.6}{25}{Examples showing the measurement of step sizes during driving at the previously specified points of interest. (\subref {fig:calibration_uhv_example_driving_z1}) shows the point of interest of Z1 and in the inset shows an example of how the driving looks after $1000$ approach steps, as well as the measurement. The image before and after are superimposed. (\subref {fig:calibration_uhv_example_driving_z2}) shows a measurement of the screw at Z2. The inset shows the measurements over an image of the final state after driving $1000$ steps in approach and then $1000$ steps in retract}{figure.caption.21}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.7}{\ignorespaces Example of a linear fit for the measured calibration data. From the slope of the fit, the step size of a single step, can be obtained. This calibration was performed during a time in which repairs at the Z3 motor were performed. The Z3 motor has a stronger difference in step size between approach/retract than the other motors here.}}{26}{figure.caption.22}\protected@file@percent } -\newlabel{fig:calibration_example}{{2.7}{26}{Example of a linear fit for the measured calibration data. From the slope of the fit, the step size of a single step, can be obtained. This calibration was performed during a time in which repairs at the Z3 motor were performed. 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In (b) one can see the surface of the sample holder on the upper side as well as an upwards shift on the side of the sample, indicating that the sample is tilted with respect to the camera, this is caused by a camera too high up or tilted too far down.}}{27}{figure.caption.24}\protected@file@percent } -\newlabel{fig:camera_alignment_example}{{2.9}{27}{Examples of camera views for different alignment situations. Camera placed or angled too low (a), too high (b) and placed in good alignment (c). In (a) the surface of the sample can be seen, which means the camera is not in line with the sample, but rather tilted too far up or too low. In (b) one can see the surface of the sample holder on the upper side as well as an upwards shift on the side of the sample, indicating that the sample is tilted with respect to the camera, this is caused by a camera too high up or tilted too far down}{figure.caption.24}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.10}{\ignorespaces The progression of optical alignment up from $65 \pm 5$ $\mu $m (a) to $25 \pm 5$ $\mu $m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length.}}{28}{figure.caption.25}\protected@file@percent } -\newlabel{fig:optical_approach}{{2.10}{28}{The progression of optical alignment up from $65 \pm 5$ $\mu $m (a) to $25 \pm 5$ $\mu $m (c) mask sample distance. 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(\subref {fig:mask_aligner_nomenclature_capacitances_mask}) shows a diagram of the mask's dimensions as well as labeling of the mask's sensors. The inset shows the dimensions of the holey part of the mask, which is actually used to create patterns.}}{29}{figure.caption.26}\protected@file@percent } +\@writefile{toc}{\contentsline {section}{\numberline {2.1}Molecular beam evaporation chamber}{14}{section.2.1}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {2.1}{\ignorespaces Circuit diagram of the mask aligner and its associated vacuum system. It consists of the mask aligner (MA) chamber, the main chamber, the Pb evaporator and the \ce {Au} evaporator. The \ce {Au} evaporator is attached to the same vacuum system, but is unrelated to the Mask Aligner. The configuration depicted is used for evaporation. The \textcolor {tab_green}{green} line shows the sample/mask extraction and insertion path with the wobble stick. The black arrow shows the molecular beam path from the \ce {Pb} evaporator. BA stands for Bayard-Alpert pressure gauge. This diagram is accurate for the setup on 01.08.24.}}{14}{figure.caption.16}\protected@file@percent } +\newlabel{fig:mask_aligner_chamber}{{2.1}{14}{Circuit diagram of the mask aligner and its associated vacuum system. It consists of the mask aligner (MA) chamber, the main chamber, the Pb evaporator and the \ce {Au} evaporator. The \ce {Au} evaporator is attached to the same vacuum system, but is unrelated to the Mask Aligner. The configuration depicted is used for evaporation. The \textcolor {tab_green}{green} line shows the sample/mask extraction and insertion path with the wobble stick. The black arrow shows the molecular beam path from the \ce {Pb} evaporator. BA stands for Bayard-Alpert pressure gauge. This diagram is accurate for the setup on 01.08.24}{figure.caption.16}{}} +\citation{florian_forster} +\@writefile{toc}{\contentsline {subsection}{\numberline {2.1.1}Lead evaporator}{15}{subsection.2.1.1}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {2.2}{\ignorespaces Solidworks diagram of the evaporator used on the Mask Aligner.}}{16}{figure.caption.17}\protected@file@percent } +\newlabel{fig:ma_evap}{{2.2}{16}{Solidworks diagram of the evaporator used on the Mask Aligner}{figure.caption.17}{}} +\newlabel{fig:mask_aligner_nomenclature_motors}{{2.3a}{17}{\relax }{figure.caption.18}{}} +\newlabel{sub@fig:mask_aligner_nomenclature_motors}{{a}{17}{\relax }{figure.caption.18}{}} +\newlabel{fig:mask_aligner_nomenclature_components}{{2.3b}{17}{\relax }{figure.caption.18}{}} +\newlabel{sub@fig:mask_aligner_nomenclature_components}{{b}{17}{\relax }{figure.caption.18}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.3}{\ignorespaces (\subref {fig:mask_aligner_nomenclature_motors}) shows the nomenclature for the motors of Mask Aligner. (\subref {fig:mask_aligner_nomenclature_components}) shows the components of the Mask Aligner \textbf {A} carrying frame \textbf {B} piezo stack, \textbf {C} stoppers, \textbf {D} sliding rail for x-movement, \textbf {E} sample stage, \textbf {F} sample \textbf {G} sample holder, \textbf {H} mask frame, \textbf {I} mask stage, \textbf {J} Mask, \textbf {K} mask shuttle, \textbf {L} neodymium magnet, \textbf {M} \ce {Al2O3} plate, \textbf {N} \ce {CuBe} spring, \textbf {O} piezo motor front plate, \textbf {P} sapphire prism, \textbf {Q} lower body. In \textcolor {tab_red}{red} the molecular beam path to the mask is displayed.}}{17}{figure.caption.18}\protected@file@percent } +\newlabel{fig:mask_aligner_nomenclature}{{2.3}{17}{(\subref {fig:mask_aligner_nomenclature_motors}) shows the nomenclature for the motors of Mask Aligner. 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The jumps in signal result from the \ce {CuBe} plate slipping across the winding of the screw}{figure.caption.20}{}} +\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.2}Motor calibration}{20}{subsection.2.3.2}\protected@file@percent } +\newlabel{fig:calibration_uhv_example_driving_z1}{{2.6a}{21}{\relax }{figure.caption.21}{}} +\newlabel{sub@fig:calibration_uhv_example_driving_z1}{{a}{21}{\relax }{figure.caption.21}{}} +\newlabel{fig:calibration_uhv_example_driving_z2}{{2.6b}{21}{\relax }{figure.caption.21}{}} +\newlabel{sub@fig:calibration_uhv_example_driving_z2}{{b}{21}{\relax }{figure.caption.21}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.6}{\ignorespaces Comparison of photographs recorded prior and after $1000$ steps were driven. (\subref {fig:calibration_uhv_example_driving_z1}) shows the top of motor Z1, inset shows a zoom in of the top plate with the image after driving $1000$ approach steps superimposed. \textcolor {tab_red}{Red} lines show the top edge difference and resulting travel length. (\subref {fig:calibration_uhv_example_driving_z2}) shows the same as (\subref {fig:calibration_uhv_example_driving_z1}) for the screw used to determine step size for motor Z2. Inset shows both approach and retract for $1000$ steps.}}{21}{figure.caption.21}\protected@file@percent } +\newlabel{fig:calibration_uhv_example_driving}{{2.6}{21}{Comparison of photographs recorded prior and after $1000$ steps were driven. (\subref {fig:calibration_uhv_example_driving_z1}) shows the top of motor Z1, inset shows a zoom in of the top plate with the image after driving $1000$ approach steps superimposed. \textcolor {tab_red}{Red} lines show the top edge difference and resulting travel length. (\subref {fig:calibration_uhv_example_driving_z2}) shows the same as (\subref {fig:calibration_uhv_example_driving_z1}) for the screw used to determine step size for motor Z2. Inset shows both approach and retract for $1000$ steps}{figure.caption.21}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.7}{\ignorespaces Top view of the Mask Aligner with the motors Z1-Z3 and the screws on the mask frame displayed. The triangle and line construction shows the derivation for the motor movement from screw movement.}}{22}{figure.caption.22}\protected@file@percent } +\newlabel{fig:calibration_screw_diff_explain}{{2.7}{22}{Top view of the Mask Aligner with the motors Z1-Z3 and the screws on the mask frame displayed. 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(b) shows the same for Z2 and Z3.}}{23}{figure.caption.23}\protected@file@percent } +\newlabel{fig:calibration_uhv_points_of_interest}{{2.8}{23}{Points of interest for the calibration of the 3 piezo motors ion UHV. (a) shows measurement point \textcolor {tab_green}{green} and object that is chosen for measurement \textcolor {tab_green}{red} for calibration of Z1. (b) shows the same for Z2 and Z3}{figure.caption.23}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.9}{\ignorespaces Upper curves: Measured distance of motors traveled as a function of steps driven with linear fit and marked results step size. $+$ is retract $-$ is approach (see Fig. \ref {fig:mask_aligner_nomenclature_motors}). Lower curves: deviation of the data points from fit.}}{24}{figure.caption.24}\protected@file@percent } +\newlabel{fig:calibration_example}{{2.9}{24}{Upper curves: Measured distance of motors traveled as a function of steps driven with linear fit and marked results step size. $+$ is retract $-$ is approach (see Fig. \ref {fig:mask_aligner_nomenclature_motors}). Lower curves: deviation of the data points from fit}{figure.caption.24}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.10}{\ignorespaces Step size as a function of voltage (DC peak) with linear fit and resulting slopes marked.}}{24}{figure.caption.25}\protected@file@percent } +\newlabel{fig:calibration_voltage}{{2.10}{24}{Step size as a function of voltage (DC peak) with linear fit and resulting slopes marked}{figure.caption.25}{}} +\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.3}Optical alignment}{25}{subsection.2.3.3}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {2.11}{\ignorespaces Examples of camera views for different alignment situations. (a) camera placed or angled too low, (b) too high and (c) placed in good alignment. In (a), the surface of the sample can be seen, which means the camera is not in line with the sample, but rather tilted too far up or too low. In (b), one can see the surface of the sample holder on the upper side as well as an upwards shift on the side of the sample, indicating that the sample is tilted with respect to the camera, this is caused by a camera too high up or tilted too far down.}}{25}{figure.caption.26}\protected@file@percent } +\newlabel{fig:camera_alignment_example}{{2.11}{25}{Examples of camera views for different alignment situations. (a) camera placed or angled too low, (b) too high and (c) placed in good alignment. In (a), the surface of the sample can be seen, which means the camera is not in line with the sample, but rather tilted too far up or too low. In (b), one can see the surface of the sample holder on the upper side as well as an upwards shift on the side of the sample, indicating that the sample is tilted with respect to the camera, this is caused by a camera too high up or tilted too far down}{figure.caption.26}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.12}{\ignorespaces The progression of optical alignment up from $65 \pm 5$ $\mu $m (a) to $25 \pm 5$ $\mu $m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length.}}{26}{figure.caption.27}\protected@file@percent } +\newlabel{fig:optical_approach}{{2.12}{26}{The progression of optical alignment up from $65 \pm 5$ $\mu $m (a) to $25 \pm 5$ $\mu $m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length}{figure.caption.27}{}} +\@writefile{tdo}{\contentsline {todo}{Start here}{27}{section*.28}\protected@file@percent } +\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.4}Approach curves}{27}{subsection.2.3.4}\protected@file@percent } +\newlabel{fig:mask_aligner_nomenclature_capacitances_motors}{{2.13a}{27}{\relax }{figure.caption.29}{}} +\newlabel{sub@fig:mask_aligner_nomenclature_capacitances_motors}{{a}{27}{\relax }{figure.caption.29}{}} +\newlabel{fig:mask_aligner_nomenclature_capacitances_mask}{{2.13b}{27}{\relax }{figure.caption.29}{}} +\newlabel{sub@fig:mask_aligner_nomenclature_capacitances_mask}{{b}{27}{\relax }{figure.caption.29}{}} +\newlabel{fig:mask_aligner_nomenclature_capacitances}{{\caption@xref {fig:mask_aligner_nomenclature_capacitances}{ on input line 284}}{27}{Approach curves}{figure.caption.29}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.13}{\ignorespaces (\subref {fig:mask_aligner_nomenclature_capacitances_motors}) shows a cross-section of the Mask Aligner showing the labeling and rough positioning of the capacitance sensors on the mask (inner \textcolor {tab_red}{red} triangle) in relation to the $3$ piezo motor stacks. (\subref {fig:mask_aligner_nomenclature_capacitances_mask}) shows a diagram of the mask's dimensions as well as labeling of the mask's sensors. The inset shows the dimensions of the holey part of the mask, which is actually used to create patterns.}}{27}{figure.caption.29}\protected@file@percent } \citation{SiN_dielectric} -\@writefile{lof}{\contentsline {figure}{\numberline {2.12}{\ignorespaces Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ in order. The RHK relay controls, which motor is currently driven.}}{30}{figure.caption.27}\protected@file@percent } -\newlabel{fig:diagram_MA_circ}{{2.12}{30}{Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ in order. The RHK relay controls, which motor is currently driven}{figure.caption.27}{}} -\newlabel{eq:plate_capacitor}{{2.1}{30}{Approach curves}{equation.2.2.1}{}} -\newlabel{fig:approach_curve_example_cap}{{2.13a}{31}{\relax }{figure.caption.28}{}} -\newlabel{sub@fig:approach_curve_example_cap}{{a}{31}{\relax }{figure.caption.28}{}} -\newlabel{fig:approach_curve_example_cap_diff}{{2.13b}{31}{\relax }{figure.caption.28}{}} -\newlabel{sub@fig:approach_curve_example_cap_diff}{{b}{31}{\relax }{figure.caption.28}{}} -\newlabel{fig:approach_curve_example_first}{{2.13c}{31}{\relax }{figure.caption.28}{}} -\newlabel{sub@fig:approach_curve_example_first}{{c}{31}{\relax }{figure.caption.28}{}} -\newlabel{fig:approach_curve_example_second}{{2.13d}{31}{\relax }{figure.caption.28}{}} -\newlabel{sub@fig:approach_curve_example_second}{{d}{31}{\relax }{figure.caption.28}{}} -\newlabel{fig:approach_curve_example_full}{{2.13e}{31}{\relax }{figure.caption.28}{}} -\newlabel{sub@fig:approach_curve_example_full}{{e}{31}{\relax }{figure.caption.28}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.13}{\ignorespaces A capacitance (approach) curve, for one of the capacitive sensors, as an example (a) and the difference of each capacitance value to the last (b). Only one sensor is pictured. Marked are the important point where the slope of the $\frac {1}{r}$ curve changes. These points, where the geometry of the alignment process changes are marked labeled First, Second and Full contact. Before each of these points, the difference goes to a local maximum. These are marked with blue dashed lines. Below are images of the geometry between mask and sample at First (c), Second (d) and Full contact (e). Red lines or points mark where the mask is touching the sample.}}{31}{figure.caption.28}\protected@file@percent } -\newlabel{fig:approach_curve_example}{{2.13}{31}{A capacitance (approach) curve, for one of the capacitive sensors, as an example (a) and the difference of each capacitance value to the last (b). Only one sensor is pictured. Marked are the important point where the slope of the $\frac {1}{r}$ curve changes. These points, where the geometry of the alignment process changes are marked labeled First, Second and Full contact. Before each of these points, the difference goes to a local maximum. These are marked with blue dashed lines. Below are images of the geometry between mask and sample at First (c), Second (d) and Full contact (e). Red lines or points mark where the mask is touching the sample}{figure.caption.28}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.14}{\ignorespaces Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ in order. The RHK relay controls, which motor is currently driven.}}{28}{figure.caption.30}\protected@file@percent } +\newlabel{fig:diagram_MA_circ}{{2.14}{28}{Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ in order. The RHK relay controls, which motor is currently driven}{figure.caption.30}{}} +\newlabel{eq:plate_capacitor}{{2.1}{28}{Approach curves}{equation.2.3.1}{}} +\newlabel{fig:approach_curve_example_cap}{{2.15a}{29}{\relax }{figure.caption.31}{}} +\newlabel{sub@fig:approach_curve_example_cap}{{a}{29}{\relax }{figure.caption.31}{}} +\newlabel{fig:approach_curve_example_cap_diff}{{2.15b}{29}{\relax }{figure.caption.31}{}} +\newlabel{sub@fig:approach_curve_example_cap_diff}{{b}{29}{\relax }{figure.caption.31}{}} +\newlabel{fig:approach_curve_example_first}{{2.15c}{29}{\relax }{figure.caption.31}{}} +\newlabel{sub@fig:approach_curve_example_first}{{c}{29}{\relax }{figure.caption.31}{}} +\newlabel{fig:approach_curve_example_second}{{2.15d}{29}{\relax }{figure.caption.31}{}} +\newlabel{sub@fig:approach_curve_example_second}{{d}{29}{\relax }{figure.caption.31}{}} +\newlabel{fig:approach_curve_example_full}{{2.15e}{29}{\relax }{figure.caption.31}{}} +\newlabel{sub@fig:approach_curve_example_full}{{e}{29}{\relax }{figure.caption.31}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.15}{\ignorespaces A capacitance (approach) curve, for one of the capacitive sensors, as an example (a) and the difference of each capacitance value to the last (b). Only one sensor is pictured. Marked are the important point where the slope of the $\frac {1}{r}$ curve changes. These points, where the geometry of the alignment process changes are marked labeled First, Second and Full contact. Before each of these points, the difference goes to a local maximum. These are marked with blue dashed lines. Below are images of the geometry between mask and sample at First (c), Second (d) and Full contact (e). Red lines or points mark where the mask is touching the sample.}}{29}{figure.caption.31}\protected@file@percent } +\newlabel{fig:approach_curve_example}{{2.15}{29}{A capacitance (approach) curve, for one of the capacitive sensors, as an example (a) and the difference of each capacitance value to the last (b). Only one sensor is pictured. Marked are the important point where the slope of the $\frac {1}{r}$ curve changes. These points, where the geometry of the alignment process changes are marked labeled First, Second and Full contact. Before each of these points, the difference goes to a local maximum. These are marked with blue dashed lines. Below are images of the geometry between mask and sample at First (c), Second (d) and Full contact (e). Red lines or points mark where the mask is touching the sample}{figure.caption.31}{}} \citation{Beeker} -\newlabel{eq:cap_slope_change}{{2.3}{32}{Approach curves}{equation.2.2.3}{}} +\newlabel{eq:cap_slope_change}{{2.3}{30}{Approach curves}{equation.2.3.3}{}} \citation{Beeker} -\@writefile{lof}{\contentsline {figure}{\numberline {2.14}{\ignorespaces Plot of data of approach curves recorded on two different days. The second curve was recorded after retraction and subsequent approach. The 2 curves do not start at the same distance away from sample, which is why they are not aligned on the x-axis. A clear drop in capacitance can be observed from one measurement to the other regardless.}}{33}{figure.caption.29}\protected@file@percent } -\newlabel{fig:approach_subsequent}{{2.14}{33}{Plot of data of approach curves recorded on two different days. The second curve was recorded after retraction and subsequent approach. The 2 curves do not start at the same distance away from sample, which is why they are not aligned on the x-axis. 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For \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier.}}{34}{figure.caption.31}\protected@file@percent } -\newlabel{fig:approach_replicability}{{2.15}{34}{3 subsequent approach curves \subref {fig:approach_replicability_cap} and differences in capacitance for each step \subref {fig:approach_replicability_cap_diff} recorded. \textcolor {tab_green}{Green} is initial curve. \textcolor {tab_blue}{Blue} curve is after sample has been carefully removed and reinserted. For \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier}{figure.caption.31}{}} -\@writefile{toc}{\contentsline {subsection}{\numberline {2.2.5}Cross capacitances}{35}{subsection.2.2.5}\protected@file@percent } -\newlabel{subsec:cross_cap}{{2.2.5}{35}{Cross capacitances}{subsection.2.2.5}{}} -\newlabel{fig:cross_cap_approach_difference}{{2.16a}{35}{\relax }{figure.caption.32}{}} -\newlabel{sub@fig:cross_cap_approach_difference}{{a}{35}{\relax }{figure.caption.32}{}} -\newlabel{fig:cross_cap_approach_difference_2}{{2.16b}{35}{\relax }{figure.caption.32}{}} -\newlabel{sub@fig:cross_cap_approach_difference_2}{{b}{35}{\relax }{figure.caption.32}{}} -\newlabel{fig:cross_cap_approach_sim}{{2.16c}{35}{\relax }{figure.caption.32}{}} -\newlabel{sub@fig:cross_cap_approach_sim}{{c}{35}{\relax }{figure.caption.32}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.16}{\ignorespaces The 3 capacitance curves of two example measurements of 2 different masks normalized to ensure same scale (\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}). (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of how the approach with tilted sample would look in an ideal case.}}{35}{figure.caption.32}\protected@file@percent } -\newlabel{fig:cross_cap_approach}{{2.16}{35}{The 3 capacitance curves of two example measurements of 2 different masks normalized to ensure same scale (\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}). (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of how the approach with tilted sample would look in an ideal case}{figure.caption.32}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {2.17}{\ignorespaces Diagram showing one possible explanation for the large correlation in Capacitance readings. A small Tear in the \ce {SiNi} layer removes insulation between the gold wire and the Si of the mask, allowing current to travel through. 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The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger.}}{40}{figure.caption.37}\protected@file@percent } -\newlabel{fig:cross_cap_diagramm}{{2.20}{40}{Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. 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For \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier.}}{32}{figure.caption.34}\protected@file@percent } +\newlabel{fig:approach_replicability}{{2.17}{32}{3 subsequent approach curves \subref {fig:approach_replicability_cap} and differences in capacitance for each step \subref {fig:approach_replicability_cap_diff} recorded. \textcolor {tab_green}{Green} is initial curve. \textcolor {tab_blue}{Blue} curve is after sample has been carefully removed and reinserted. For \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier}{figure.caption.34}{}} +\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.6}Cross capacitances}{33}{subsection.2.3.6}\protected@file@percent } +\newlabel{subsec:cross_cap}{{2.3.6}{33}{Cross capacitances}{subsection.2.3.6}{}} +\newlabel{fig:cross_cap_approach_difference}{{2.18a}{33}{\relax }{figure.caption.35}{}} +\newlabel{sub@fig:cross_cap_approach_difference}{{a}{33}{\relax }{figure.caption.35}{}} +\newlabel{fig:cross_cap_approach_difference_2}{{2.18b}{33}{\relax }{figure.caption.35}{}} +\newlabel{sub@fig:cross_cap_approach_difference_2}{{b}{33}{\relax }{figure.caption.35}{}} +\newlabel{fig:cross_cap_approach_sim}{{2.18c}{33}{\relax }{figure.caption.35}{}} +\newlabel{sub@fig:cross_cap_approach_sim}{{c}{33}{\relax }{figure.caption.35}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.18}{\ignorespaces The 3 capacitance curves of two example measurements of 2 different masks normalized to ensure same scale (\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}). (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of how the approach with tilted sample would look in an ideal case.}}{33}{figure.caption.35}\protected@file@percent } +\newlabel{fig:cross_cap_approach}{{2.18}{33}{The 3 capacitance curves of two example measurements of 2 different masks normalized to ensure same scale (\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}). (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of how the approach with tilted sample would look in an ideal case}{figure.caption.35}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.19}{\ignorespaces Diagram showing one possible explanation for the large correlation in Capacitance readings. A small Tear in the \ce {SiNi} layer removes insulation between the gold wire and the Si of the mask, allowing current to travel through. This causes the capacitance to reflect the much larger capacitance between the Si of the Mask and that of the sample, instead of the desired Capacitance between the gold pad and the Si of the sample.}}{34}{figure.caption.36}\protected@file@percent } +\newlabel{fig:leakage_current}{{2.19}{34}{Diagram showing one possible explanation for the large correlation in Capacitance readings. A small Tear in the \ce {SiNi} layer removes insulation between the gold wire and the Si of the mask, allowing current to travel through. This causes the capacitance to reflect the much larger capacitance between the Si of the Mask and that of the sample, instead of the desired Capacitance between the gold pad and the Si of the sample}{figure.caption.36}{}} +\@writefile{lot}{\contentsline {table}{\numberline {2.1}{\ignorespaces Table of cross capacitance measurement to determine possible causes for large values in approach curves. 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The main difference is the scale of the y-axis, and due to this the scale of the uncertainty.}}{36}{figure.caption.38}\protected@file@percent } +\newlabel{fig:mask_old_caps}{{2.20}{36}{The 3 capacitance curves of the Mask labeled "old", the plots look the same, sharing all features and general shape. The main difference is the scale of the y-axis, and due to this the scale of the uncertainty}{figure.caption.38}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.21}{\ignorespaces The 3 capacitance curves of the Mask labeled "old" scaled to be within same range, via normalization and subsequent fit of offset parameter, first to C2 and C3 fit to C1 and then C3 fit to C2. The lower plots show residuals. The residuals show the variation to be well within the error bars and overall within less than $1$ \%.}}{37}{figure.caption.39}\protected@file@percent } +\newlabel{fig:mask_old_correl}{{2.21}{37}{The 3 capacitance curves of the Mask labeled "old" scaled to be within same range, via normalization and subsequent fit of offset parameter, first to C2 and C3 fit to C1 and then C3 fit to C2. The lower plots show residuals. The residuals show the variation to be well within the error bars and overall within less than $1$ \%}{figure.caption.39}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {2.22}{\ignorespaces Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger.}}{38}{figure.caption.40}\protected@file@percent } +\newlabel{fig:cross_cap_diagramm}{{2.22}{38}{Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger}{figure.caption.40}{}} +\@writefile{toc}{\contentsline {paragraph}{Leakage current}{38}{section*.41}\protected@file@percent } +\@writefile{toc}{\contentsline {paragraph}{Improved gold pin fitting}{38}{section*.42}\protected@file@percent } +\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.7}Stop Conditions}{38}{subsection.2.3.7}\protected@file@percent } +\@writefile{toc}{\contentsline {paragraph}{High correlation between capacitance curves}{39}{section*.43}\protected@file@percent } +\@writefile{toc}{\contentsline {paragraph}{Low correlation between capacitance curves}{39}{section*.44}\protected@file@percent } +\@writefile{toc}{\contentsline {section}{\numberline {2.4}Mask Aligner operation}{39}{section.2.4}\protected@file@percent } +\@writefile{toc}{\contentsline {subsection}{\numberline {2.4.1}Sample preparation}{39}{subsection.2.4.1}\protected@file@percent } +\newlabel{sec:sample_prep}{{2.4.1}{39}{Sample preparation}{subsection.2.4.1}{}} \@setckpt{chap02}{ -\setcounter{page}{43} +\setcounter{page}{41} \setcounter{equation}{4} \setcounter{enumi}{10} \setcounter{enumii}{0} @@ -119,17 +128,17 @@ \setcounter{mpfootnote}{0} \setcounter{part}{0} \setcounter{chapter}{2} -\setcounter{section}{3} +\setcounter{section}{4} \setcounter{subsection}{1} \setcounter{subsubsection}{0} \setcounter{paragraph}{0} \setcounter{subparagraph}{0} -\setcounter{figure}{20} +\setcounter{figure}{22} \setcounter{table}{1} \setcounter{section@level}{2} \setcounter{Item}{10} \setcounter{Hfootnote}{0} -\setcounter{bookmark@seq@number}{19} +\setcounter{bookmark@seq@number}{21} \setcounter{parentequation}{0} \setcounter{FancyVerbLine}{0} \setcounter{NAT@ctr}{0} @@ -138,7 +147,7 @@ \setcounter{subfigure}{0} \setcounter{subtable}{0} \setcounter{lstnumber}{1} -\setcounter{@todonotes@numberoftodonotes}{0} +\setcounter{@todonotes@numberoftodonotes}{2} \setcounter{float@type}{8} \setcounter{AM@survey}{0} \setcounter{thm}{0} diff --git a/chap02.tex b/chap02.tex index f589c3eeacd53ae0fde10e893c79c7f69214b9b9..a9b96bd3fe920b10292043ec621d63e824516a76 100644 --- a/chap02.tex +++ b/chap02.tex @@ -1,6 +1,37 @@ % !TeX spellcheck = <en-US> \chapter{Mask Aligner} +\section{Molecular beam evaporation chamber} +\begin{figure}[H] + \centering + \includegraphics[width=0.9\linewidth]{img/MaskAlignerChamber.pdf} + \caption{Circuit diagram of the mask aligner and its associated vacuum +system. It consists of the mask aligner (MA) chamber, the main chamber, the +Pb evaporator and the \ce{Au} evaporator. The \ce{Au} evaporator is attached to the same vacuum system, but is unrelated to the Mask Aligner. The configuration depicted is used for +evaporation. The \textcolor{tab_green}{green} line shows the sample/mask extraction +and insertion path with the wobble stick. The black arrow shows the molecular beam +path from the \ce{Pb} evaporator. BA stands for Bayard-Alpert pressure gauge. This diagram is accurate for the setup on 01.08.24.} + \label{fig:mask_aligner_chamber} +\end{figure} + +The Mask Aligner vacuum system (Figure \ref{fig:mask_aligner_chamber}) consists of three areas chambers that can be separated with vacuum gate valves~\cite{Mask_Aligner}. The \textbf{M}ain \textbf{C}hamber (MC), the Mask Aligner (MA) chamber, and the evaporator chamber. The second one is the \textbf{L}oad \textbf{L}ock (LL), a vacuum suitcase that is used to insert new samples and masks into the system. The third part is used for pumping down the system to UHV pressures by use of a turbomolecular pump and a prepump (rotary vane). +Between prepump and turbo molecular pump is a pressure sensor to determine if the prepump is providing suitable backing pressure. A valve to a nitrogen bottle allows the system to be vented with an inert gas to avoid contamination.\\ +The main chamber is equipped with an Ion Getter Pump, such that the system can be separated from the turbomolecular pump, without loss of UHV conditions. The pumping system is separated via $2$ \textbf{A}ll \textbf{M}etal \textbf{C}orner \textbf{V}alves (AMCV) (Fig. \ref{fig:mask_aligner_chamber}). Additionally, the Load Lock and the main chamber are separated by a Gate Valve. In order to detect leaks ort contaminants in the vacuum system, a mass spectrometer is attached to the main chamber. \\ +The Load Lock is equipped with a small ion getter pump, that runs on its own, allowing it to keep UHV conditions, even while separated from the main pump loop. A garage with spaces for up to $14$ samples ($10$: $12\times12$ cm$^2$, $4$: Omicron size) is part of the Load lock. Masks can also be stored in these, but require $2$ sample slots. For insertion and removal of masks and sample, a wobble stick is attached to the Load lock chamber. The path of the wobble stick to the Mask Aligner is marked \textcolor{tab_green}{green} in Figure \ref{fig:mask_aligner_chamber}. \\ +Another device, unrelated to this thesis, a gold evaporator, is connected to the vacuum system. It is not further discussed in this thesis, but is drawn in Figure \ref{fig:mask_aligner_chamber} since it was attached to the same system. \\ + +\subsection{Lead evaporator} +The electron beam evaporator used for the lead evaporation in the mask aligner chamber was built by Florian Forster in $2009$~\cite{florian_forster}. It is shown schematically in Figure \ref{fig:ma_evap}. The crucible is made from tungsten. The evaporator uses a filament placed near the crucible to bombard the crucible with highly energetic electrons. To accomplish this, a high current (up to $1$ kV) is applied between filament and crucible to accelerate electrons to the crucible. In addition, the system is heated by radiative heat from the filament. This heat is used to degas the evaporator and to prevent contaminants from settling on the filament, when no evaporation is taking place. The heating element and crucible are surrounded by a copper cylinder, that functions as a heat sink. The heat sink is water cooled to prevent outgassing of the surrounding due to heating by the filament or crucible. To control the temperature of the \ce{Cu} cylinder during degassing a thermal sensor is placed on the copper cylinder. \\ + +\begin{figure}[H] + \centering + \includegraphics[width=0.8\linewidth]{img/MA/Evaporator.pdf} + \caption{Solidworks diagram of the evaporator used on the Mask Aligner.} + \label{fig:ma_evap} +\end{figure} + +In order to control the molecular flux, one can change the current applied to the filament or the voltage accelerating the electrons. Additionally, the crucible can be shifted on the z-axis closer to or further away from the filament, controlling the amount of heating that is received by the source material. This method of temperature control is the least reliable and was not used in this thesis. The distance was previously optimized. In order to determine the flux current of $\text{Pb}^+$ ions leaving the crucible, it is measured by a flux monitor positioned at the top of the evaporator. Above the flux monitor is a shutter which can be used to open the molecular flow to the MA chamber. \\ + \begin{figure}[H] \centering \begin{subfigure}{0.42\textwidth} @@ -14,68 +45,50 @@ \caption{} \label{fig:mask_aligner_nomenclature_components} \end{subfigure} - \caption{The nomenclature for the various parts of the Mask Aligner. The four -movement axes and their names from the viewport perspective -(\subref{fig:mask_aligner_nomenclature_motors}). The various components of the -Mask Aligner (\subref{fig:mask_aligner_nomenclature_components}) \textbf{A} -carrying frame \textbf{B} piezo stack, \textbf{C} stoppers, \textbf{D} Sliding -Rail for x-movement, \textbf{E} sample stage, \textbf{F} sample \textbf{G} -sample holder, \textbf{H} Mask Frame, \textbf{I} Mask, \textbf{J} Mask Shuttle, -\textbf{K} neodym magnet, \textbf{L} \ce{Al2O3} plate, \textbf{M} \ce{CuBe} -spring, \textbf{N} piezo motor front plate, \textbf{O} sapphire prism, -\textbf{P} Mask Aligner lower body. In \textcolor{tab_red}{red} the molecular + \caption{(\subref{fig:mask_aligner_nomenclature_motors}) shows the nomenclature for the motors of Mask Aligner. (\subref{fig:mask_aligner_nomenclature_components}) shows the components of the Mask Aligner \textbf{A} carrying frame \textbf{B} piezo stack, \textbf{C} stoppers, \textbf{D} sliding rail for x-movement, \textbf{E} sample stage, \textbf{F} sample \textbf{G} +sample holder, \textbf{H} mask frame, \textbf{I} mask stage, \textbf{J} Mask, \textbf{K} mask shuttle, +\textbf{L} neodymium magnet, \textbf{M} \ce{Al2O3} plate, \textbf{N} \ce{CuBe} +spring, \textbf{O} piezo motor front plate, \textbf{P} sapphire prism, +\textbf{Q} lower body. In \textcolor{tab_red}{red} the molecular beam path to the mask is displayed.} \label{fig:mask_aligner_nomenclature} \end{figure} -The Mask Aligner is made up of components that can be separated into 3 sections: -The sample module (Figure \ref{fig:mask_aligner_nomenclature_components} A-G), the central (mask) module (Figure \ref{fig:mask_aligner_nomenclature_components} I-J) and the lower (motor) module (Figure \ref{fig:mask_aligner_nomenclature_components} K-P). \\ -The sample module is used for the stable fitting of the sample and the movement of the sample in the x direction. For this reason the sample module is fitted with a sliding rail (Fig. \ref{fig:mask_aligner_nomenclature_components} D) along which the sample stage (Fig. \ref{fig:mask_aligner_nomenclature_components} E) can be moved, by applying voltage pulses. This setup is referred to as a motor and this motor is labeled X, since it moves the sample in x direction, the movement is pictured inf Figure \ref{fig:mask_aligner_nomenclature_motors}. The sample holder itself is held in place with spring tension inside the sample stage, allowing the sample to remain firm in its position, while it still remains easy to withdraw and insert the sample. \\ +The Mask Aligner can be separated into 3 sections: +The upper sample module (Fig. \ref{fig:mask_aligner_nomenclature_components}, A-G), the central mask module (Fig. \ref{fig:mask_aligner_nomenclature_components}, I-K) and the lower motor module (Fig. \ref{fig:mask_aligner_nomenclature_components}, L-Q). \\ +The sample module carries the sample and moves of the sample along the x direction. It contains a sliding rail (Fig. \ref{fig:mask_aligner_nomenclature_components} D) along which the sample stage (Fig. \ref{fig:mask_aligner_nomenclature_components}, E) can be moved, by $6$ piezo stacks (Fig. \ref{fig:mask_aligner_nomenclature_components}, B), labeled X in Fig. \ref{fig:mask_aligner_nomenclature_motors}. This setup is referred to as a motor. The sample holder is held with spring tension inside the sample stage (Fig. \ref{fig:mask_aligner_nomenclature_components}, G). Hence, it is fixed, but can be removed in-situ. \\ -The mask module consists of the mask frame (Fig. \ref{fig:mask_aligner_nomenclature_components} H), which holds the mask shuttle (Fig. \ref{fig:mask_aligner_nomenclature_components} J) in place using spring tension and provides \ce{CuBe} contacts for the $3$ capacitance detectors on the mask used for capacitive distance measurement. The contacts are connected to shielded coaxial cables that take the capacitance signal from the mask to the vacuum feedthroughs. The coaxial cables are grounded to the Mask Aligner body (Fig. \ref{fig:mask_aligner_nomenclature_components} P). \\ +The mask module consists of the mask frame (Fig. \ref{fig:mask_aligner_nomenclature_components}, H), which holds the mask shuttle (Fig. \ref{fig:mask_aligner_nomenclature_components}, K) using spring tension. It also provides \ce{CuBe} contacts for the $3$ capacitance detectors on the mask used for capacitive distance measurement. The contacts are connected to shielded coaxial cables running to the vacuum feedthroughs. The shielding is ground to the Mask Aligner body (Fig. \ref{fig:mask_aligner_nomenclature_components}, Q). \\ -The motor module of the Mask Aligner consists of $3$ motors of similar build. The motors move the mask on the z axis $3$ different pivot points, due to this the $3$ motors are labeled Z1, Z2 and Z3. The order of the $3$ motors is pictured in Figure \ref{fig:mask_aligner_nomenclature_motors}. Each motor consists of a sapphire prism (Fig. \ref{fig:mask_aligner_nomenclature_components} O) that is held in place by $6$ piezo stack (made up of $4$ $\approx 0.4$ nF piezo plates each). $4$ of these are attached directly to the Mask Aligner body. While the last two are attached to a metal plate (Fig. \ref{fig:mask_aligner_nomenclature_components} N), which is pressed against the sapphire prism using a \ce{CuBe} spring (Fig. \ref{fig:mask_aligner_nomenclature_components} M). The tension of the spring keeps the sapphire prism in its place while still allowing movement of the sapphire prism using the piezo stacks. To control the amount of tension the \ce{CuBe} spring provides, it is affixed using a screw, which can be made more firm or loose to provide more or less tension on the sapphire prism. On top of the sapphire prism, a \ce{Al2O3} plate (Fig. \ref{fig:mask_aligner_nomenclature_components} L) is attached, which has a small groove in the middle. A neodym magnet (Fig. \ref{fig:mask_aligner_nomenclature_components} K) is located in the groove of the plate and connects the motor to the mask frame, where a similar \ce{Al2O3} plate setup is placed on the -underside of the mask frame. The pivot points created by the $3$ motors neodym magnet connections to the mask frame approximately build an equilateral triangle, with the mask position in the middle. When a motor's sapphire prism now moves up, the mask frame is tilted on the axis defined by the other two motor pivot points and the side of the mask moves closer to the sample. With this, the tilt of the mask frame and thus the tilt of the mask can be controlled with precision in the order of $\approx 50$ nm steps. \\ -When moving the sapphire prism up the mask "approaches" the sample, due to this the movement direction is labeled approach, while the opposite is called retract. Often the direction is also specified by mathematical sign, where $-$ specifies the approach direction, while $+$ specifies retract.\\ +The motor module consists of $3$ piezo motors. They move the mask along the z axis via $3$ different pivot points. They are labeled Z1, Z2 and Z3 (Figure \ref{fig:mask_aligner_nomenclature_motors}). Each motor consists of a sapphire prism (Fig. \ref{fig:mask_aligner_nomenclature_components}, P) that is clamped by $6$ piezo stacks made up of $4$ piezo plates ($\approx 0.4$ nF) each. Four of the stacks are glued directly to the Mask Aligner body. The last two are attached to a metal plate (Fig. \ref{fig:mask_aligner_nomenclature_components}, O). It is pressed against the sapphire prism via a \ce{CuBe} leaf spring (Fig. \ref{fig:mask_aligner_nomenclature_components}, N). The tension of the \ce{CuBe} spring can be adjusted with a screw mounted on it. This adjustment is critical for the reliable operation of the piezo motor. On top of the sapphire prism, an \ce{Al2O3} plate (Fig. \ref{fig:mask_aligner_nomenclature_components}, M) is attached. It has a small groove in the center, where a neodymium magnet (Fig. \ref{fig:mask_aligner_nomenclature_components}, L) is located. It connects the motor to the mask frame, where a similar \ce{Al2O3} plate is placed. The three pivot points created by the magnets build an equilateral triangle, with the mask in the center. When only one sapphire prism moves up, the mask frame is tilted on the axis defined by the other two motors pivot points and the side of the mask moves closer to the sample. With the three motors arranged in a triangle arbitrary angles can be realized. Since the motor step size is $\approx 70$ nm the angular precision is approximately $\tan^{-1}(\frac{70 \text{ nm}}{23 \text{ mm}}) \approx 1.74 \times 10^{-4}^\circ$. \\ +Often the direction is specified by mathematical sign, where $-$ specifies the approach direction, while $+$ specifies retract (Fig. \ref{fig:mask_aligner_nomenclature_motors}).\\ +\section{Slip stick principle} +In order to control the movement of the mask stage using the mask aligner, $3$ motors of $6$ piezo stack made of $4$ piezo crystals each are used. Piezo crystals expand/contract upon being supplied with a voltage. In order for the piezo crystals to move the stage, a sapphire prism is clamped between the $6$ piezo stacks. When one now applies a voltage to the piezo stacks, the prism is moved by the stacks. An illustration of the principle is shown in Figure \ref{fig:slip_stick_diagram}. \\ +First a slowly rising pulse is applied to the piezo moving the prism along with the piezo. This pulse is referred to as the "slow flank". Afterward, a very fast pulse ($<1$ $\mu$s) is applied, contracting the piezo back into its original position. The prism however due to its inertia remains in position. This pulse is referred to as the "fast flank". When done many times over, the prism can be moved larger distances. The direction depends on the voltage amplitude signal polarity. The simplest pulse shape allowing for this is the saw tooth wave, but other signal shapes that follow the principle can be used. -\section{Molecular beam evaporation chamber} \begin{figure}[H] \centering - \includegraphics[width=0.9\linewidth]{img/MaskAlignerChamber.pdf} - \caption{Circuit diagram of the mask aligner and its associated vacuum -system. The system consists of the mask aligner chamber, the main chamber, the -Pb evaporator and the AU evaporator. The AU evaporator is attached to the same vacuum system, but is unrelated to the Mask Aligner. The configuration depicted is used for -evaporation. The section labeled load lock is a vacuum suitcase and can be -detached. The \textcolor{tab_green}{green} path shows the sample/mask extraction -and insertion path with the wobble stick. The black arrow shows the molecular beam -path from the \ce{Pb} evaporator.} - \label{fig:mask_aligner_chamber} + \includegraphics[width=0.9\linewidth]{img/SlipStickGrafix.pdf} + \caption{Image showing the slip-stick principle. On the right an example signal is shown.} + \label{fig:slip_stick_diagram} \end{figure} -The Mask Aligner vacuum system consists of three distinct vacuum chambers that can be separated with vacuum gate valves~\cite{Mask_Aligner}. The first part is the \textbf{M}ain \textbf{C}hamber (MC), in which the Mask Aligner is located, and the evaporator chamber used to create a molecular beam into the main chamber, secondly the \textbf{L}oad \textbf{L}ock (LL), which is a vacuum suitcase that is used to insert new samples and masks into the system and thirdly a Turbomolecular pump loop used to pump the system down to UHV vacuum pressures. The main chamber is equipped with an Ion Getter Pump, due to this the system can be separated from the main pumping loop of the Turbo molecular pump, without loss of vacuum pressure. The system is separated via $2$ \textbf{A}ll \textbf{M}etal \textbf{C}orner \textbf{V}alves (AMCV), one located directly on the main chamber and one separating the evaporator from the Turbomolecular pump loop. Additionally, the Load Lock and the main chamber are separated using a Gate Valve. In order to detect leaks in the vacuum system, a mass spectrometer is also attached to the main chamber. \\ -The Load Lock is equipped with a small ion getter pump, that runs on its own, allowing it to keep UHV pressures for extended periods of time, even while separated from the main pump loop. A garage with spaces for up to $10$ samples and $4$ additional spaces for Omicron samples is part of the Load Lock. This allows insertion of multiple samples and masks, that can then be later inserted into the main chamber. For insertion and removal of masks and sample, a wobble stick is attached to the Load Lock chamber. The sample/mask insertion path of the wobble stick can be seen in \textcolor{tab_green}{green} in Figure \ref{fig:mask_aligner_chamber}. The Load Lock is designed to be a detachable vacuum suitcase, allowing samples to be stored in the garage and then transported with the suitcase to another vacuum system without intermediate exposure to ambient conditions.\\ -The main pump loop consists of a rotary vane prepump and a turbomolecular pump. Between prepump and turbo molecular pump is a pressure sensor to determine if the prepump is providing suitable backing pressure and a valve, which can be opened to a Nitrogen bottle to allow the system to be vented to atmospheric pressure with an inert gas. \\ -The 3 parts are seen as distinct, as the 3 components can be decoupled safely once the entire system is pumped to UHV without risk of losing vacuum pressure since no part of the system is not pumped. \\ -Another device, unrelated to this thesis, a gold evaporator, is connected to the vacuum system of the Mask Aligner, but it can be currently run fully separately, as it has its own Turbomolecular pump with attached prepump. As such, the system is completely independent and only needs to be opened to the Mask Aligner system to check its pressure, since it currently is not equipped with any pressure sensor of its own. The pressure sensor is however not needed, since in testing the turbomolecular pump can pump the system down to the necessary pressures in very short time. Opening to the Mask Aligner system would only be needed in case there is a suspected leak. \\ - \section{Shadow mask alignment} -\subsection{Motor calibration} -In order to use the Mask Aligner the different step sizes, i.e. the amount each -motor moves when one pulse is applied, has to be measured. This should be done in -order to make sure all motors run with similar step sizes and inside UHV to -determine the final step size for approach curves, since in UHV the contribution to the step sizer from friction is increased. The calibration is used to determine a value for the distance of mask and sample, when the distance is small enough that it can no longer be optically determined.\\ +\subsection{Motor screw configuration} + In order to make sure the motors can all give similar step sizes, there are 3 -screws (see Figure \ref{fig:screw_firmness_screw_image}), one on each motor's front plate, that can control the amount of force -the front plate applies to the prism and thus the amount of friction the piezo -stacks each apply to the prism. An example curve for how the screw firmness -affects the step size can be seen in Figure \ref{fig:screw_firmness_plot}. +screws (see Figure \ref{fig:screw_firmness_screw_image}). One is located on each motor's leaf spring. They can control the amount of force the front plate applies to the prism and thus the friction between the prism and piezo stacks. In order to achieve similar step size for the $3$ motors. The step size in dependence of the screw firmness has to be determined. This is done by measuring +the time it takes for a motor to travel a known distance. For example the +distance of one solder anchor can be used as it is known +to be $2$ mm. This gives a measurement fast and precise enough to determine a suitable number of rotations. +An example for how the screw firmness affects the step size can be seen in Figure \ref{fig:screw_firmness_plot}. \begin{figure}[H] \centering \begin{subfigure}{0.375\textwidth} \centering - \includegraphics[width=\linewidth]{img/MA/Calibration_screw_image.png} + \includegraphics[width=\linewidth]{img/MA/Calibration_screw_image.pdf} \caption{} \label{fig:screw_firmness_screw_image} \end{subfigure} @@ -84,52 +97,57 @@ affects the step size can be seen in Figure \ref{fig:screw_firmness_plot}. \caption{} \label{fig:screw_firmness_plot} \end{subfigure} - \caption{\subref{fig:screw_firmness_screw_image} shows a frontal view of the motor Z2 marked in red is the screw used for calibration of the motors on the Mask Aligner. \subref{fig:screw_firmness_plot} shows example curves of how the screws of Z2 and Z3 affect the given motor's step size. A point where the 3 motors are in agreement has to be found iteratively. The jumps in signal after certain rotations result from the \ce{CuBe} plate slipping across the winding of the screw at certain spots. } + \caption{(\subref{fig:screw_firmness_screw_image}) shows a frontal view of the motor Z2 marked in red is the screw used for calibration of the motors on the Mask Aligner. (\subref{fig:screw_firmness_plot}) shows example curves of how the screws of Z2 and Z3 affect the given motor's step size. The $0.0$ screw rotation is arbitrary. $+$ means retraction and $-$ means approach (Fig. \ref{fig:mask_aligner_nomenclature_motors}). The jumps in signal result from the \ce{CuBe} plate slipping across the winding of the screw. } \label{fig:screw_firmness} \end{figure} -In order to achieve equivalent performance of the motors, a common point has to be found on -these screw curves at which the screws are then left. This is done by measuring -the time it takes for a motor to travel a known distance. For example the -distance of one solder anchor can be used as it is known -to be $2$ mm. This gives a measurement with large error, but -enough precision to determine a good screw position, while not taking up a large -amount of time and allowing for quick iteration. \\ - -In order to do a final calibration to obtain the step sizes, one has to measure -the distance driven for specific given amount of steps driven. This is done -optically with the camera. To do so, the camera first has to be calibrated with -an object of known size. For this, a good choice are the \ce{Nd} magnets on top -of the prisms as their diameter is known to be $5$ mm and they are always in -view when looking at the motors separately. \\ - In order to do measure the distance each motor travels in a given amount of -steps, a specific remarkable point has to be found, that does not change upon -motor movement and that can be observed after and before a given amount of steps -were driven. Outside UHV the best points are small scratches on the prisms -\ce{Al2O3} plate, since these are already in a focal plane with the motors, -and it is easy to determine their center since they are usually only a few -pixels in diameter, while remaining stable after driving. However, when scratches -in the metal are chosen as a point of reference, the lighting conditions must not -be changed during the calibration, as this can hinder their visibility.\\ -Inside UHV it is a little more complicated since only one angle is available for -the camera. For Z1, the previously mentioned notches on the Z1 Motor itself can -be chosen, since it is directly in view, but for the motors Z2 and Z3 this -procedure is not possible since they cannot be directly seen. Instead, the 2 +\subsection{Motor calibration} +For the Mask Aligner, the step sizes, of the different motors have to be measured. In the best case they all have the same step size such that the mask is approached without being tilted. The step size calibration is used to determine the distance of mask and sample, when the distance is too small to be optically determined.\\ + +The procedure for step size calibration is very simple: $2000$, $4000$, +$6000$, $8000$ and $10000$ steps are driven and after each set of steps the distance +the prism has traveled in camera view is measured. This is done with the Bresser MicroCam II software. In the software a line is drawn at the initial position. After driving another line is drawn at the end position. The distance between these are measured using the software. An example for motor Z1 and Z2 can be seen in Figure \ref{fig:calibration_uhv_example_driving} for a $1000$ step measurement. If changes to the motors have been performed a calibration has to be performed outside of UHV before reinsertion into UHV. Afterwards the motors have to be calibrated in UHV. \\ + +\begin{figure}[H] + \centering + \begin{subfigure}{0.495\textwidth} + \centering + \includegraphics[width=\linewidth]{img/MA/CalibrationZ1.pdf} + \caption{} + \label{fig:calibration_uhv_example_driving_z1} + \end{subfigure} + \begin{subfigure}{0.495\textwidth} + \centering + \includegraphics[width=\linewidth]{img/MA/CalibrationZ2.pdf} + \caption{} + \label{fig:calibration_uhv_example_driving_z2} + \end{subfigure} + \caption{Comparison of photographs recorded prior and after $1000$ steps were driven. (\subref{fig:calibration_uhv_example_driving_z1}) shows the top of motor Z1, inset shows a zoom in of the top plate with the image after driving $1000$ approach steps superimposed. \textcolor{tab_red}{Red} lines show the top edge difference and resulting travel length. (\subref{fig:calibration_uhv_example_driving_z2}) shows the same as (\subref{fig:calibration_uhv_example_driving_z1}) for the screw used to determine step size for motor Z2. Inset shows both approach and retract for $1000$ steps.} + \label{fig:calibration_uhv_example_driving} +\end{figure} + +For this measurement a specific remarkable point has to be found. The point has to be stable upon motor driving. After points are chosen, the lighting conditions must not be changed during the calibration, as this can hinder their visibility.\\ + +Outside UHV the best points are small scratches on the prisms +\ce{Al2O3} plate, since these are already in a focal plane with the motors. +It is easy to determine their center since they are usually only a few +pixels in diameter. The distance measurement using the camera is calibrated by using an object of known size in the focal plane. One example that can be used are the \ce{Nd} magnets ($5$ mm diameter). + +Inside UHV the process is more complicated, since only one camera angle is available. For Z1, the previously mentioned notches on the Z1 Motor itself can +be chosen, but for the motors Z2 and Z3 this procedure is not possible because they cannot be directly seen. Instead, the 2 screws very close to the motors are chosen (seen in Figure \ref{fig:calibration_uhv_points_of_interest} -\subref{fig:calibration_uhv_points_of_interest_z2z3}) and their movement is instead observed. For camera calibration their -diameter is chosen as this is also known to be $3$ mm. The -distance driven in this instance is still good to measure, but the screws are a -little closer to the camera than the motors themselves, if one neglects the small deviation of the screw from the imaginary line connecting the motor pivot point from the line to the center one can estimate the distance the screw moves per unit of movement for the motor itself using an equilateral triangle. The model for this can be seen in Figure \ref{fig:calibration_screw_diff_explain}. +\subref{fig:calibration_uhv_points_of_interest_z2z3}) and their movement is observed. For camera calibration their diameter is chosen as this is also known to be $3$ mm. +The screws are a little closer to the camera than the motors themselves, this is accounted for by using a simple trigonometric model seen in Figure \ref{fig:calibration_screw_diff_explain}. +With this one gets that for each unit of distance the motor moves, the screws move by $h' = \frac{17.8}{23.74} \approx 0.75$. With this, the actual movement on the motor can be obtained. \\ \begin{figure}[H] \centering \includegraphics[width=0.6\linewidth]{img/Plots/Calibrations/screw_diff_explain.pdf} - \caption{Diagram explaining how to derive the deviation of measured step size on the screws near the Z2 and Z3 motors from the actual step size of the motors.} + \caption{Top view of the Mask Aligner with the motors Z1-Z3 and the screws on the mask frame displayed. The triangle and line construction shows the derivation for the motor movement from screw movement.} \label{fig:calibration_screw_diff_explain} \end{figure} -With this one gets that for each unit of distance the motor moves, the screws move by $h' = \frac{17.8}{23.74} \approx 0.75$. With this, the actual movement on the motor can be obtained. \\ \begin{figure}[H] \centering @@ -150,87 +168,42 @@ shows the same for Z2 and Z3.} \label{fig:calibration_uhv_points_of_interest} \end{figure} -When good measurement points are found the procedure is very simple: $2000$, $4000$, -$6000$, $8000$ and $10000$ steps are driven and after each set of steps the distance -the chosen point has traveled in camera view is measured. An example for motor Z1 and Z2 can be seen in Figure \ref{fig:calibration_uhv_example_driving} for a $1000$ step measurement. \\ - -\begin{figure}[H] - \centering - \begin{subfigure}{0.495\textwidth} - \centering - \includegraphics[width=\linewidth]{img/MA/CalibrationZ1.pdf} - \caption{} - \label{fig:calibration_uhv_example_driving_z1} - \end{subfigure} - \begin{subfigure}{0.495\textwidth} - \centering - \includegraphics[width=\linewidth]{img/MA/CalibrationZ2.pdf} - \caption{} - \label{fig:calibration_uhv_example_driving_z2} - \end{subfigure} - \caption{Examples showing the measurement of step sizes during driving at the previously specified points of interest. (\subref{fig:calibration_uhv_example_driving_z1}) shows the point of interest of Z1 and in the inset shows an example of how the driving looks after $1000$ approach steps, as well as the measurement. The image before and after are superimposed. (\subref{fig:calibration_uhv_example_driving_z2}) shows a measurement of the screw at Z2. The inset shows the measurements over an image of the final state after driving $1000$ steps in approach and then $1000$ steps in retract.} - \label{fig:calibration_uhv_example_driving} -\end{figure} - -Afterward a linear fit is performed from the given data and from the slope of the fit the step size -for a single step can be determined. After each set of steps driven it has to be ensured, that the mask frame not tilted, as excessive tilt will affect the step size. It should also be taken care that the movement range of the piezos is not exceeded. This means that the piezos should not drive so far down, that the \ce{Nd} detaches from the stage or that the frame is driven so far up, that it interferes with the sample stage. Under no circumstance should the motors be driven so far down, that the sapphire prism might fall out of the motor. This has to be done for both driving -directions separately, since in one gravity affects the movement positively and -in one negatively, and thus the step sizes will be different for both approach -and retract. An example of the linear fit -obtained is shown in Figure \ref{fig:calibration_example}. In this image it can -be seen, that the positive direction has larger step sizes and that steps size -is on the order of $10$ nm/step. +A linear fit is performed for the given data and from the slope of the fit the step size for a single step is determined. The results are shown in Figure \ref{fig:calibration_example}. After each set of steps it has to be ensured, that the mask frame is not tilted. Excessive tilt will affect the step size. It should also be taken care that the movement range of the piezos is not exceeded. The \ce{Nd} magnets should not detach from the frame. Moreover, the sapphire prism can fall out of the motor if it is driven too far down. The measurement has to be done for both driving directions separately, since the step sizes will be different. Indeed in Fig. \ref{fig:calibration_example} it can be seen, that the positive retract direction has consistently larger step sizes. The Z3 motor also shows a larger difference in step size for approach and retract than the other $2$ motors. \begin{figure}[H] \centering \includegraphics[width=0.8\linewidth]{img/Plots/Calibrations/80V.pdf} - \caption{Example of a linear fit for the measured calibration data. From the -slope of the fit, the step size of a single step, can be obtained. This -calibration was performed during a time in which repairs at the Z3 motor were -performed. The Z3 motor has a stronger difference in step size between -approach/retract than the other motors here.} + \caption{Upper curves: Measured distance of motors traveled as a function of steps driven with linear fit and marked results step size. $+$ is retract $-$ is approach (see Fig. \ref{fig:mask_aligner_nomenclature_motors}). Lower curves: deviation of the data points from fit.} \label{fig:calibration_example} \end{figure} -This calibration has been performed for various voltages in order to determine -the steps size dependency on voltage for the different motors. This can be +This calibration has been performed for various voltage amplitudes. This can be seen in Figure \ref{fig:calibration_voltage} \begin{figure}[H] \centering \includegraphics[width=0.9\linewidth]{img/Plots/Calibrations/VoltageBehaviour.pdf} - \caption{} + \caption{Step size as a function of voltage (DC peak) with linear fit and resulting slopes marked.} \label{fig:calibration_voltage} \end{figure} The behavior is linear in the voltage, but the slope is slightly different for -each motor, causing an optimum voltage for driving all 3 motors with the same -voltage to be around $80$ V. Also noticeable is a strong difference in slope for +each motor. An optimum, where all motors drive similarly appears at $80$ V. Also noticeable is a strong difference in slope for Z3. Z3 is much more influenced by voltage than the other motors, where the -step size/V is larger by $\approx 0.3$. From this plot the -slope for each motor can be obtained and with this possible variations in motor -behavior can be compensated by adjusting the voltage to each channel. This has -to be done by driving each motor separately, since the current setup does not -allow for different voltage pulses to be applied to each of the motor -simultaneously. This should allow for corrections should the driving behavior -of the motors change or if compensation for potential deviations in -step size is needed.\\ +step size/V is larger by $\approx 0.3$. Variations in motor behavior can be compensated using this data. To do this different voltages would have to be applied to each channel. However, the current setup does not allow for this. Due to this new driving electronics are required.\\ \subsection{Optical alignment} To align mask and sample, it is first necessary to get the sample aligned and -within a distance of at least $50$ $\mu$m optically. A good optical alignment is -necessary since at large distances $>50$ $\mu$m the capacitance sensors give -small signal, which will then be noise dominated and thus unusable for -alignment. \\ +within a distance of at least $50$ $\mu$m optically. This is +necessary since the capacitance sensors give only +small signals, at large distances.\\ To do this, a Bresser MicroCam II camera with a resolution of $20$ megapixel is -mounted on a stand in front of the window of the mask aligner chamber. The -mounting of it can be controlled via 3 micrometer screws in x, y and z -direction. Additionally, the camera can be rotated on $2$ axes allowing full -control of the camera angle. No optical adjustment can be done -in the axis, in which the camera is pointed as depth information is difficult to -obtain. For this reason, the sample has to be aligned so that its surface normal -is perpendicular to the camera's view direction, i.e. no sample surface can be +mounted on a frame in front of the window of the mask aligner chamber. The +frame can be positioned via 3 micrometer screws in x, y and z +direction. Additionally, the camera can be rotated around $2$ axes allowing full +control of the camera angle. The sample has to be aligned so that its surface normal +is perpendicular to the camera's view direction. No sample surface can be seen in camera view and no upwards tilt can be observed when viewing the side edge of the sample, and the upper side of the sample holder, cannot be observed. \\ @@ -238,7 +211,7 @@ edge of the sample, and the upper side of the sample holder, cannot be observed. \begin{figure}[H] \centering \begin{subfigure}{0.3\textwidth} - \includegraphics[width=\linewidth]{img/CameraAlignment_bad_low.png} + \includegraphics[width=\linewidth]{img/CameraAlignment_bad_low.pdf} \caption{} \end{subfigure} \begin{subfigure}{0.3\textwidth} @@ -249,10 +222,10 @@ edge of the sample, and the upper side of the sample holder, cannot be observed. \includegraphics[width=\linewidth]{img/CameraAlignment_good.png} \caption{} \end{subfigure} - \caption{Examples of camera views for different alignment situations. Camera -placed or angled too low (a), too high (b) and placed in good alignment (c). In -(a) the surface of the sample can be seen, which means the camera is not in line -with the sample, but rather tilted too far up or too low. In (b) one + \caption{Examples of camera views for different alignment situations. (a) camera +placed or angled too low, (b) too high and (c) placed in good alignment. In +(a), the surface of the sample can be seen, which means the camera is not in line +with the sample, but rather tilted too far up or too low. In (b), one can see the surface of the sample holder on the upper side as well as an upwards shift on the side of the sample, indicating that the sample is tilted with respect to the camera, this is caused by a camera too high up or tilted too far @@ -262,11 +235,10 @@ down.} \end{figure} When the camera is aligned with the sample, the mask can now be moved close to -the sample leaving a decently sized gap between mask and sample still. Now the +the sample leaving a gap between mask and sample still. Now the mask is aligned until only a very small gap can be seen. The size of the gap can -be optically estimated using the Bresser software. A known length can be used to -calibrate lengths within the software. As an object of known length, the sample -can be for example chosen since its edge is known to be $5940 \pm 20 $ $\mu$m. +be optically estimated using the Bresser software. Direct contact of the sample has to be avoided at this stage. This might require retraction and subsequent approach since the motors are not located directly beneath the mask. A known length can be used to +calibrate lengths within the software. As an object of known length ($5940 \pm 20 $ $\mu$m), the sample is chosen. In camera view direction, the mask and sample should now be aligned within achievable optical accuracy. The progression of this can be seen in Figure \ref{fig:optical_approach} @@ -289,7 +261,7 @@ achievable optical accuracy. 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The capacitance relay is used to measure $C_i$ in order}{figure.caption.61}{}} \@setckpt{chap03}{ -\setcounter{page}{55} +\setcounter{page}{52} \setcounter{equation}{1} \setcounter{enumi}{10} \setcounter{enumii}{0} @@ -81,17 +78,17 @@ \setcounter{mpfootnote}{0} \setcounter{part}{0} \setcounter{chapter}{3} -\setcounter{section}{4} +\setcounter{section}{3} \setcounter{subsection}{7} \setcounter{subsubsection}{0} \setcounter{paragraph}{0} \setcounter{subparagraph}{0} -\setcounter{figure}{10} +\setcounter{figure}{9} \setcounter{table}{0} \setcounter{section@level}{2} \setcounter{Item}{10} \setcounter{Hfootnote}{0} -\setcounter{bookmark@seq@number}{36} +\setcounter{bookmark@seq@number}{37} \setcounter{parentequation}{0} \setcounter{FancyVerbLine}{0} \setcounter{NAT@ctr}{0} @@ -100,7 +97,7 @@ \setcounter{subfigure}{0} \setcounter{subtable}{0} \setcounter{lstnumber}{1} -\setcounter{@todonotes@numberoftodonotes}{0} +\setcounter{@todonotes@numberoftodonotes}{2} \setcounter{float@type}{8} \setcounter{AM@survey}{0} \setcounter{thm}{0} diff --git a/chap03.tex b/chap03.tex index 7f4a61b89a65156ad0fac8467c8c2fe451d20db8..01e465991e8a1e64a5644859b2cdeb897dafdcd0 100644 --- a/chap03.tex +++ b/chap03.tex @@ -1,15 +1,5 @@ % !TeX spellcheck = <en-US> \chapter{Electronics} -\section{Slip stick principle} -In order to control the movement of the mask stage using the mask aligner, 3 motors of 6 piezo stack made of 4 piezo crystals each are used. Piezo crystals expand/contract upon being supplied with a voltage. In order for the piezo crystals to now move the stage, a sapphire prism is set up in between the 6 piezo stacks. When one now applies a voltage to the piezo stacks, the prism is moved by the stacks when the piezo crystals expand/contract. For this to result in a net movement of the prism, the slip stick principle is applied. The principle works as follows. First a slowly rising pulse is applied to the piezo moving the prism along with the piezo. This pulse is referred to as the "slow flank". Now a very fast pulse is applied, contracting the piezo back into its original position. The prism however due to its inertia cannot follow the piezo crystal's motion, and it remains in the position previously given by the piezo crystal's expansion. This pulse is referred to as the "fast flank". When done many times over, these results in the prism being moved upwards, or downward depending on signal polarity, by the piezo crystals. The principle is shown in Figure \ref{fig:slip_stick_diagram}. The simplest pulse shape allowing for this is the saw tooth wave. - -\begin{figure}[H] - \centering - \includegraphics[width=0.9\linewidth]{img/SlipStickGrafix.pdf} - \caption{Image showing the slip-stick principle. The plot on the right is only an example. Different functions are possible.} - \label{fig:slip_stick_diagram} -\end{figure} - \section{RHK} \subsection{Overview} The PMC100 Piezo motor controller by RHK technologies is a piezo motor controller designed for operating nanoscale motion in Scanning Probe systems. The piezo motor controller is capable of sending signals to $9$ separate motors at the same time. For each of these nine channels and for both direction, there are $3$ parameters that can be changed: diff --git a/chap04.aux b/chap04.aux index 21e082d0af145ac4e96863d11c1cc82cdc7f865a..c97910a81a10da9bc7e4a8d35d00f2d46ccc954c 100644 --- a/chap04.aux +++ b/chap04.aux @@ -1,85 +1,85 @@ \relax \providecommand\hyper@newdestlabel[2]{} \citation{Olschewski} -\@writefile{toc}{\contentsline {chapter}{\numberline {4}Mask Aligner repairs and optimizations}{55}{chapter.4}\protected@file@percent } +\@writefile{toc}{\contentsline {chapter}{\numberline {4}Mask Aligner repairs and optimizations}{52}{chapter.4}\protected@file@percent } \@writefile{lof}{\addvspace {10\p@ }} \@writefile{lot}{\addvspace {10\p@ }} -\@writefile{toc}{\contentsline {section}{\numberline {4.1}Overview}{55}{section.4.1}\protected@file@percent } -\newlabel{fig:Repair_Diagram_diagram}{{4.1a}{55}{\relax }{figure.caption.60}{}} -\newlabel{sub@fig:Repair_Diagram_diagram}{{a}{55}{\relax }{figure.caption.60}{}} -\newlabel{fig:Repair_Diagram_image}{{4.1b}{55}{\relax }{figure.caption.60}{}} -\newlabel{sub@fig:Repair_Diagram_image}{{b}{55}{\relax }{figure.caption.60}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {4.1}{\ignorespaces Diagram showing the names given to the different parts of a motor of the mask aligner (\subref {fig:Repair_Diagram_diagram}). 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Making the solder point smaller (\subref {fig:solder_anchors_diagram_SmallerDot}), replacing the solder anchor ceramic with a much smaller \ce {Al2O3} plate (\subref {fig:solder_anchors_diagram_AlO}) or putting the anchor with glue on the top/bottom of the solder ceramic (\subref {fig:solder_anchors_diagram_GlueTop}). The prism is depicted in blue, the cable in brown, black represents the Mask Aligner body, solder ceramic in yellow and solder in gray. All 3 measures (\subref {fig:solder_anchors_diagram_SmallerDot}-\subref {fig:solder_anchors_diagram_GlueTop}) fix the same issue depicted in (\subref {fig:solder_anchors_diagram_base}) where the solder anchor used for cabling interferes with the prism causing the motor to drive unpredictably. }}{57}{figure.caption.61}\protected@file@percent } -\newlabel{fig:solder_anchors_diagram}{{4.2}{57}{Depiction of the problem with the solder anchors, that emerged with the Mask Aligner over time (\subref {fig:solder_anchors_diagram_base}) as well as the $3$ different measures that were taken to fix the problem. Making the solder point smaller (\subref {fig:solder_anchors_diagram_SmallerDot}), replacing the solder anchor ceramic with a much smaller \ce {Al2O3} plate (\subref {fig:solder_anchors_diagram_AlO}) or putting the anchor with glue on the top/bottom of the solder ceramic (\subref {fig:solder_anchors_diagram_GlueTop}). 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(\subref {fig:solder_anchors_examples_glue_bottom}) shows attaching a solder anchor to the bottom of a previously used solder ceramic. (\subref {fig:solder_anchors_examples_AlO}) shows the replacement of a solder ceramic with a thinner \ce {Al2O3} plate. (\subref {fig:solder_anchors_examples_shear_01}) and shows the initial state of a solder ceramic interfering with the prism and then (\subref {fig:solder_anchors_examples_shear_02}) shows the solder ceramic after some of the solder was carefully taken off, allowing the prism to now move freely.}}{59}{figure.caption.62}\protected@file@percent } -\newlabel{fig:solder_anchors_examples}{{4.3}{59}{Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref {fig:solder_anchors_examples_glue_bottom}) shows attaching a solder anchor to the bottom of a previously used solder ceramic. (\subref {fig:solder_anchors_examples_AlO}) shows the replacement of a solder ceramic with a thinner \ce {Al2O3} plate. (\subref {fig:solder_anchors_examples_shear_01}) and shows the initial state of a solder ceramic interfering with the prism and then (\subref {fig:solder_anchors_examples_shear_02}) shows the solder ceramic after some of the solder was carefully taken off, allowing the prism to now move freely}{figure.caption.62}{}} +\@writefile{toc}{\contentsline {section}{\numberline {4.1}Overview}{52}{section.4.1}\protected@file@percent } +\newlabel{fig:Repair_Diagram_diagram}{{4.1a}{52}{\relax }{figure.caption.62}{}} +\newlabel{sub@fig:Repair_Diagram_diagram}{{a}{52}{\relax }{figure.caption.62}{}} +\newlabel{fig:Repair_Diagram_image}{{4.1b}{52}{\relax }{figure.caption.62}{}} +\newlabel{sub@fig:Repair_Diagram_image}{{b}{52}{\relax }{figure.caption.62}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {4.1}{\ignorespaces Diagram showing the names given to the different parts of a motor of the mask aligner (\subref {fig:Repair_Diagram_diagram}). 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Making the solder point smaller (\subref {fig:solder_anchors_diagram_SmallerDot}), replacing the solder anchor ceramic with a much smaller \ce {Al2O3} plate (\subref {fig:solder_anchors_diagram_AlO}) or putting the anchor with glue on the top/bottom of the solder ceramic (\subref {fig:solder_anchors_diagram_GlueTop}). The prism is depicted in blue, the cable in brown, black represents the Mask Aligner body, solder ceramic in yellow and solder in gray. All 3 measures (\subref {fig:solder_anchors_diagram_SmallerDot}-\subref {fig:solder_anchors_diagram_GlueTop}) fix the same issue depicted in (\subref {fig:solder_anchors_diagram_base}) where the solder anchor used for cabling interferes with the prism causing the motor to drive unpredictably. }}{54}{figure.caption.63}\protected@file@percent } +\newlabel{fig:solder_anchors_diagram}{{4.2}{54}{Depiction of the problem with the solder anchors, that emerged with the Mask Aligner over time (\subref {fig:solder_anchors_diagram_base}) as well as the $3$ different measures that were taken to fix the problem. Making the solder point smaller (\subref {fig:solder_anchors_diagram_SmallerDot}), replacing the solder anchor ceramic with a much smaller \ce {Al2O3} plate (\subref {fig:solder_anchors_diagram_AlO}) or putting the anchor with glue on the top/bottom of the solder ceramic (\subref {fig:solder_anchors_diagram_GlueTop}). The prism is depicted in blue, the cable in brown, black represents the Mask Aligner body, solder ceramic in yellow and solder in gray. All 3 measures (\subref {fig:solder_anchors_diagram_SmallerDot}-\subref {fig:solder_anchors_diagram_GlueTop}) fix the same issue depicted in (\subref {fig:solder_anchors_diagram_base}) where the solder anchor used for cabling interferes with the prism causing the motor to drive unpredictably}{figure.caption.63}{}} +\newlabel{fig:solder_anchors_examples_glue_bottom}{{4.3a}{56}{\relax }{figure.caption.64}{}} +\newlabel{sub@fig:solder_anchors_examples_glue_bottom}{{a}{56}{\relax }{figure.caption.64}{}} +\newlabel{fig:solder_anchors_examples_AlO}{{4.3b}{56}{\relax }{figure.caption.64}{}} +\newlabel{sub@fig:solder_anchors_examples_AlO}{{b}{56}{\relax }{figure.caption.64}{}} +\newlabel{fig:solder_anchors_examples_shear_01}{{4.3c}{56}{\relax }{figure.caption.64}{}} +\newlabel{sub@fig:solder_anchors_examples_shear_01}{{c}{56}{\relax }{figure.caption.64}{}} +\newlabel{fig:solder_anchors_examples_shear_02}{{4.3d}{56}{\relax }{figure.caption.64}{}} +\newlabel{sub@fig:solder_anchors_examples_shear_02}{{d}{56}{\relax }{figure.caption.64}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {4.3}{\ignorespaces Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref {fig:solder_anchors_examples_glue_bottom}) shows attaching a solder anchor to the bottom of a previously used solder ceramic. (\subref {fig:solder_anchors_examples_AlO}) shows the replacement of a solder ceramic with a thinner \ce {Al2O3} plate. (\subref {fig:solder_anchors_examples_shear_01}) and shows the initial state of a solder ceramic interfering with the prism and then (\subref {fig:solder_anchors_examples_shear_02}) shows the solder ceramic after some of the solder was carefully taken off, allowing the prism to now move freely.}}{56}{figure.caption.64}\protected@file@percent } +\newlabel{fig:solder_anchors_examples}{{4.3}{56}{Examples of the different approaches taken to solve the issues with the solder anchor points. (\subref {fig:solder_anchors_examples_glue_bottom}) shows attaching a solder anchor to the bottom of a previously used solder ceramic. (\subref {fig:solder_anchors_examples_AlO}) shows the replacement of a solder ceramic with a thinner \ce {Al2O3} plate. (\subref {fig:solder_anchors_examples_shear_01}) and shows the initial state of a solder ceramic interfering with the prism and then (\subref {fig:solder_anchors_examples_shear_02}) shows the solder ceramic after some of the solder was carefully taken off, allowing the prism to now move freely}{figure.caption.64}{}} \citation{Olschewski} -\@writefile{toc}{\contentsline {section}{\numberline {4.4}Piezo re-gluing}{60}{section.4.4}\protected@file@percent } -\newlabel{sec:piezo_reglue}{{4.4}{60}{Piezo re-gluing}{section.4.4}{}} -\newlabel{fig:Z3_reglue_process_off}{{4.4a}{61}{\relax }{figure.caption.63}{}} -\newlabel{sub@fig:Z3_reglue_process_off}{{a}{61}{\relax }{figure.caption.63}{}} -\newlabel{fig:Z3_reglue_process_scratched}{{4.4b}{61}{\relax }{figure.caption.63}{}} -\newlabel{sub@fig:Z3_reglue_process_scratched}{{b}{61}{\relax }{figure.caption.63}{}} -\newlabel{fig:Z3_reglue_process_dot}{{4.4c}{61}{\relax }{figure.caption.63}{}} -\newlabel{sub@fig:Z3_reglue_process_dot}{{c}{61}{\relax }{figure.caption.63}{}} -\newlabel{fig:Z3_reglue_process_down}{{4.4d}{61}{\relax }{figure.caption.63}{}} -\newlabel{sub@fig:Z3_reglue_process_down}{{d}{61}{\relax }{figure.caption.63}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {4.4}{\ignorespaces The re gluing process shown for the upper left piezo on Z3 that was no longer attached to the Mask Aligner Body (a). Remains of the EPO-TEK H70E epoxy glue are visible as brown stains on both the Mask Aligner Body and the piezo stack. In (b) the remains were scratched off carefully to ensure no large height discrepancy is introduced. (c) shows the applied dot of Torr Seal epoxy glue applied to the piezo stack before being carefully put in place. In order for the glue to have a force applied to it during the curing process two nuts and the prism were used as weights, while the prism was put into the Aligner to ensure proper alignment with the prism the stacks are supposed to move.}}{61}{figure.caption.63}\protected@file@percent } -\newlabel{fig:Z3_reglue_process}{{4.4}{61}{The re gluing process shown for the upper left piezo on Z3 that was no longer attached to the Mask Aligner Body (a). Remains of the EPO-TEK H70E epoxy glue are visible as brown stains on both the Mask Aligner Body and the piezo stack. In (b) the remains were scratched off carefully to ensure no large height discrepancy is introduced. (c) shows the applied dot of Torr Seal epoxy glue applied to the piezo stack before being carefully put in place. In order for the glue to have a force applied to it during the curing process two nuts and the prism were used as weights, while the prism was put into the Aligner to ensure proper alignment with the prism the stacks are supposed to move}{figure.caption.63}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {4.5}{\ignorespaces The final glued position of the upper Z3 motor after re-gluing. Red line shows the deviation from the other piezo stack. The angle $\alpha $ is about $ \approx 4.5^\circ \pm 0.5^\circ $.}}{62}{figure.caption.64}\protected@file@percent } -\newlabel{fig:Z3_after reglue}{{4.5}{62}{The final glued position of the upper Z3 motor after re-gluing. Red line shows the deviation from the other piezo stack. 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Driving of the motors was done in 2000, 4000, 6000, 8000 and 10000 steps under ambient conditions.}}{68}{figure.caption.71}\protected@file@percent } -\newlabel{fig:calibration_after_repair}{{4.11}{68}{The final calibration that was performed, after all the optimizations were done. Driving of the motors was done in 2000, 4000, 6000, 8000 and 10000 steps under ambient conditions}{figure.caption.71}{}} +\@writefile{toc}{\contentsline {section}{\numberline {4.4}Piezo re-gluing}{57}{section.4.4}\protected@file@percent } +\newlabel{sec:piezo_reglue}{{4.4}{57}{Piezo re-gluing}{section.4.4}{}} +\newlabel{fig:Z3_reglue_process_off}{{4.4a}{58}{\relax }{figure.caption.65}{}} +\newlabel{sub@fig:Z3_reglue_process_off}{{a}{58}{\relax }{figure.caption.65}{}} +\newlabel{fig:Z3_reglue_process_scratched}{{4.4b}{58}{\relax }{figure.caption.65}{}} +\newlabel{sub@fig:Z3_reglue_process_scratched}{{b}{58}{\relax }{figure.caption.65}{}} +\newlabel{fig:Z3_reglue_process_dot}{{4.4c}{58}{\relax }{figure.caption.65}{}} +\newlabel{sub@fig:Z3_reglue_process_dot}{{c}{58}{\relax }{figure.caption.65}{}} +\newlabel{fig:Z3_reglue_process_down}{{4.4d}{58}{\relax }{figure.caption.65}{}} +\newlabel{sub@fig:Z3_reglue_process_down}{{d}{58}{\relax }{figure.caption.65}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {4.4}{\ignorespaces The re gluing process shown for the upper left piezo on Z3 that was no longer attached to the Mask Aligner Body (a). Remains of the EPO-TEK H70E epoxy glue are visible as brown stains on both the Mask Aligner Body and the piezo stack. In (b) the remains were scratched off carefully to ensure no large height discrepancy is introduced. (c) shows the applied dot of Torr Seal epoxy glue applied to the piezo stack before being carefully put in place. In order for the glue to have a force applied to it during the curing process two nuts and the prism were used as weights, while the prism was put into the Aligner to ensure proper alignment with the prism the stacks are supposed to move.}}{58}{figure.caption.65}\protected@file@percent } +\newlabel{fig:Z3_reglue_process}{{4.4}{58}{The re gluing process shown for the upper left piezo on Z3 that was no longer attached to the Mask Aligner Body (a). Remains of the EPO-TEK H70E epoxy glue are visible as brown stains on both the Mask Aligner Body and the piezo stack. In (b) the remains were scratched off carefully to ensure no large height discrepancy is introduced. (c) shows the applied dot of Torr Seal epoxy glue applied to the piezo stack before being carefully put in place. In order for the glue to have a force applied to it during the curing process two nuts and the prism were used as weights, while the prism was put into the Aligner to ensure proper alignment with the prism the stacks are supposed to move}{figure.caption.65}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {4.5}{\ignorespaces The final glued position of the upper Z3 motor after re-gluing. Red line shows the deviation from the other piezo stack. The angle $\alpha $ is about $ \approx 4.5^\circ \pm 0.5^\circ $.}}{59}{figure.caption.66}\protected@file@percent } +\newlabel{fig:Z3_after reglue}{{4.5}{59}{The final glued position of the upper Z3 motor after re-gluing. Red line shows the deviation from the other piezo stack. The angle $\alpha $ is about $ \approx 4.5^\circ \pm 0.5^\circ $}{figure.caption.66}{}} +\@writefile{toc}{\contentsline {section}{\numberline {4.5}Z3 motor}{59}{section.4.5}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {4.6}{\ignorespaces Step size against screw rotation data obtained to calibrate the screw firmness for Z2 and Z3. Larger x-axis values means less firm screw. \textcolor {tab_blue}{Blue} and \textcolor {tab_orange}{orange} show Z3 before swapping front plate with Z1, \textcolor {tab_green}{green} and \textcolor {tab_red}{red} show after.}}{60}{figure.caption.67}\protected@file@percent } +\newlabel{fig:Z3_screw_rot}{{4.6}{60}{Step size against screw rotation data obtained to calibrate the screw firmness for Z2 and Z3. Larger x-axis values means less firm screw. \textcolor {tab_blue}{Blue} and \textcolor {tab_orange}{orange} show Z3 before swapping front plate with Z1, \textcolor {tab_green}{green} and \textcolor {tab_red}{red} show after}{figure.caption.67}{}} +\@writefile{toc}{\contentsline {subsection}{\numberline {4.5.1}Front plate repair}{60}{subsection.4.5.1}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {4.7}{\ignorespaces Screw rotation calibration data for Z2 and Z3 after front plate repairs.}}{61}{figure.caption.68}\protected@file@percent } +\newlabel{fig:Z3_screw_rot_after_rep}{{4.7}{61}{Screw rotation calibration data for Z2 and Z3 after front plate repairs}{figure.caption.68}{}} +\newlabel{fig:Front_plate_repair_tool}{{4.8a}{62}{\relax }{figure.caption.69}{}} +\newlabel{sub@fig:Front_plate_repair_tool}{{a}{62}{\relax }{figure.caption.69}{}} +\newlabel{fig:Front_plate_repair_plate}{{4.8b}{62}{\relax }{figure.caption.69}{}} +\newlabel{sub@fig:Front_plate_repair_plate}{{b}{62}{\relax }{figure.caption.69}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {4.8}{\ignorespaces Solidworks explosive diagram of the Z3 front plate with the alignment tool (\subref {fig:Front_plate_repair_tool}). (\subref {fig:Front_plate_repair_plate}) shows final front plate assembled.}}{62}{figure.caption.69}\protected@file@percent } +\newlabel{fig:Front_plate_repair}{{4.8}{62}{Solidworks explosive diagram of the Z3 front plate with the alignment tool (\subref {fig:Front_plate_repair_tool}). (\subref {fig:Front_plate_repair_plate}) shows final front plate assembled}{figure.caption.69}{}} +\@writefile{toc}{\contentsline {subsection}{\numberline {4.5.2}Small capacitance stack}{63}{subsection.4.5.2}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {4.9}{\ignorespaces The measured capacitance values for the piezo stacks of the motor Z3. }}{63}{figure.caption.70}\protected@file@percent } +\newlabel{fig:Z3_weaker_stack}{{4.9}{63}{The measured capacitance values for the piezo stacks of the motor Z3}{figure.caption.70}{}} +\@writefile{toc}{\contentsline {section}{\numberline {4.6}Feed through cabling optimizations}{64}{section.4.6}\protected@file@percent } +\newlabel{fig:Feedthrough_Repairs_left}{{4.10a}{64}{\relax }{figure.caption.71}{}} +\newlabel{sub@fig:Feedthrough_Repairs_left}{{a}{64}{\relax }{figure.caption.71}{}} +\newlabel{fig:Feedthrough_Repairs_right}{{4.10b}{64}{\relax }{figure.caption.71}{}} +\newlabel{sub@fig:Feedthrough_Repairs_right}{{b}{64}{\relax }{figure.caption.71}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {4.10}{\ignorespaces Left (\subref {fig:Feedthrough_Repairs_left}) and right (\subref {fig:Feedthrough_Repairs_right}) side of Mask Aligner flange. \textcolor {tab_red}{Red} circles mark the changes made to the grounding.}}{64}{figure.caption.71}\protected@file@percent } +\newlabel{fig:Feedthrough_Repairs}{{4.10}{64}{Left (\subref {fig:Feedthrough_Repairs_left}) and right (\subref {fig:Feedthrough_Repairs_right}) side of Mask Aligner flange. \textcolor {tab_red}{Red} circles mark the changes made to the grounding}{figure.caption.71}{}} +\@writefile{lot}{\contentsline {table}{\numberline {4.1}{\ignorespaces The cross capacitance values of mask 1 before and after the optimizations of the feedthrough and capacitance sensor cables. The values agree within $1$ $\sigma $ and show no measurable improvement. Values were measured at $0.3$ mm sample distance. Optically determined with Bresser MicroCam II and MikroCamLabII.}}{65}{table.caption.72}\protected@file@percent } +\newlabel{tab:cross_cap_after_repair}{{4.1}{65}{The cross capacitance values of mask 1 before and after the optimizations of the feedthrough and capacitance sensor cables. The values agree within $1$ $\sigma $ and show no measurable improvement. Values were measured at $0.3$ mm sample distance. Optically determined with Bresser MicroCam II and MikroCamLabII}{table.caption.72}{}} +\@writefile{toc}{\contentsline {section}{\numberline {4.7}Final test}{65}{section.4.7}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {4.11}{\ignorespaces The final calibration that was performed, after all the optimizations were done. Driving of the motors was done in 2000, 4000, 6000, 8000 and 10000 steps under ambient conditions.}}{65}{figure.caption.73}\protected@file@percent } +\newlabel{fig:calibration_after_repair}{{4.11}{65}{The final calibration that was performed, after all the optimizations were done. Driving of the motors was done in 2000, 4000, 6000, 8000 and 10000 steps under ambient conditions}{figure.caption.73}{}} \@setckpt{chap04}{ -\setcounter{page}{70} +\setcounter{page}{67} \setcounter{equation}{0} \setcounter{enumi}{4} \setcounter{enumii}{0} @@ -99,7 +99,7 @@ \setcounter{section@level}{1} \setcounter{Item}{18} \setcounter{Hfootnote}{0} -\setcounter{bookmark@seq@number}{48} +\setcounter{bookmark@seq@number}{49} \setcounter{parentequation}{0} \setcounter{FancyVerbLine}{0} \setcounter{NAT@ctr}{0} @@ -108,7 +108,7 @@ \setcounter{subfigure}{0} \setcounter{subtable}{0} \setcounter{lstnumber}{1} -\setcounter{@todonotes@numberoftodonotes}{0} +\setcounter{@todonotes@numberoftodonotes}{2} \setcounter{float@type}{8} \setcounter{AM@survey}{0} \setcounter{thm}{0} diff --git a/chap04.tex b/chap04.tex index 0d0689428b411be5175a48542cb6ec168ffb5e28..fdf5967ddbaf87084601c076c3f998b02545fa81 100644 --- a/chap04.tex +++ b/chap04.tex @@ -215,7 +215,7 @@ In testing with the newly made front plate, the performance of Z3 was comparable \label{fig:Front_plate_repair} \end{figure} -In order to prevent the now longer cables of the front plates of Z1 and Z3 to interfere with Mask Aligner operation, the cables were guided around the Mask Aligner body in ways such that they would not interfere with normal operation. This includes in particular not being within the field of vision of the camera pointed at the sample (see \ref{camera_dings}) as well as not interfering with the wobble stick path when removing or adding samples/masks from the mask aligner. For this reason the cables of Z1 were moved towards the left side, when viewing Z1 from the front, and then guided to the top of the Mask Aligner body, close to the X piezo and from there to the vacuum feed through pins. Z3 was guided to the upper side of the stoppers and then directly to the vacuum feed through pins. In order to ensure the cables would not move from these positions, they were glued in place using Torr Seal. +In order to prevent the now longer cables of the front plates of Z1 and Z3 to interfere with Mask Aligner operation, the cables were guided around the Mask Aligner body in ways such that they would not interfere with normal operation. This includes in particular not being within the field of vision of the camera pointed at the sample as well as not interfering with the wobble stick path when removing or adding samples/masks from the mask aligner. For this reason the cables of Z1 were moved towards the left side, when viewing Z1 from the front, and then guided to the top of the Mask Aligner body, close to the X piezo and from there to the vacuum feed through pins. Z3 was guided to the upper side of the stoppers and then directly to the vacuum feed through pins. In order to ensure the cables would not move from these positions, they were glued in place using Torr Seal. \subsection{Small capacitance stack} During the investigation into the problems with the driving of the Z3 motor, the capacitance values for the piezo stacks of the Z3 motors were determined. Since the cables had to be re-soldered, they could be measured separately. The motor that was re-glued in Section \ref{sec:piezo_reglue} has a lower capacitance value than the surrounding piezo stacks. The value of $1.05$ nF is lower by approximately the amount a single piezo has of $0.4$ nF from the expected $1.6 \pm 0.4$ nF (the range is not a measurement uncertainty, but due to variance in temperature). The different capacitances measured for all the piezo stacks can be seen in Figure \ref{fig:Z3_weaker_stack}. The piezo stacks both showing $1.62$ nF were only measured together since they were always wired in parallel, when measurements were taken. The plate stacks were also only measured together. Measurements were taken by measuring capacitance of the entire motor Z3 with the piezos detached from the circuit. \\ diff --git a/chap05.aux b/chap05.aux index 681557e8938f6d6e4501d8a702e34a47c3996b8c..e6903bc0eee8a9e83e7b6a2191ed74591aa85e71 100644 --- a/chap05.aux +++ b/chap05.aux @@ -1,101 +1,101 @@ \relax \providecommand\hyper@newdestlabel[2]{} -\@writefile{toc}{\contentsline {chapter}{\numberline {5}Evaporations and measurement}{70}{chapter.5}\protected@file@percent } +\@writefile{toc}{\contentsline {chapter}{\numberline {5}Evaporations and measurement}{67}{chapter.5}\protected@file@percent } \@writefile{lof}{\addvspace {10\p@ }} \@writefile{lot}{\addvspace {10\p@ }} -\@writefile{toc}{\contentsline {section}{\numberline {5.1}Evaporation configuration}{70}{section.5.1}\protected@file@percent } -\@writefile{lof}{\contentsline {figure}{\numberline {5.1}{\ignorespaces The approach curve measured for Field 1 until full contact. 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The voltage was changed to ensure FLUX was in the desired range between $450-520$}{table.caption.73}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.2}{\ignorespaces The Mask Aligner chamber configuration during evaporation.}}{71}{figure.caption.74}\protected@file@percent } -\newlabel{fig:evaporation_chamber_status}{{5.2}{71}{The Mask Aligner chamber configuration during evaporation}{figure.caption.74}{}} -\newlabel{fig:Evaporation_diagramm_sample_img}{{5.3a}{72}{\relax }{figure.caption.75}{}} -\newlabel{sub@fig:Evaporation_diagramm_sample_img}{{a}{72}{\relax }{figure.caption.75}{}} -\newlabel{fig:Evaporation_diagramm_mask_img}{{5.3b}{72}{\relax }{figure.caption.75}{}} -\newlabel{sub@fig:Evaporation_diagramm_mask_img}{{b}{72}{\relax }{figure.caption.75}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.3}{\ignorespaces Diagram showing the Evaporation performed on the sample (\subref {fig:Evaporation_diagramm_sample_img}). 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The \textcolor {tab_blue}{blue} lines are the major $a$ and minor $b$ axis of the ellipse formed on the evaporated dot. Inset shows the same image in the phase data. The data stems from Evaporation 5 In Chapter 5. (\subref {fig:Evaporation_diagramm_field}) shows an AFM image of the top right part of the evaporated field labeled $3$. Grains were reduced using post-processing. Black circles show the dots chosen for further examination on this particular field.}}{74}{figure.caption.77}\protected@file@percent } -\newlabel{fig:penumbra_tilt_sigmas_and_field_show}{{5.5}{74}{AFM image of evaporated \ce {Pb} dot (\subref {fig:penumbra_tilt_sigmas}) illustrating the penumbral widths used for evaporation analysis $\sigma _s$ and $\sigma _l$, depicted in \textcolor {tab_red}{red}, and the major axis of the tilt \textcolor {tab_green}{(green)}. $\sigma _s$ is drawn larger than actually measured, since the measured value would be hardly visible. The \textcolor {tab_blue}{blue} lines are the major $a$ and minor $b$ axis of the ellipse formed on the evaporated dot. Inset shows the same image in the phase data. The data stems from Evaporation 5 In Chapter 5. (\subref {fig:Evaporation_diagramm_field}) shows an AFM image of the top right part of the evaporated field labeled $3$. Grains were reduced using post-processing. Black circles show the dots chosen for further examination on this particular field}{figure.caption.77}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.6}{\ignorespaces Example of the analysis performed on each of the recorded dots for a single line cut. (a) shows the raw AFM data before cleaning with a large amount of very bright contaminant particles. (b) shows the cleaned image, as well as the line cut \textcolor {tab_green}{(green)} from which the line cut data (c) was obtained. The black lines in (b) show how multiple line cuts were obtained on a single image to obtain values for $\sigma _s$ and $\sigma _l$. The fit parameters are the two different penumbra widths induced by the tilt $\sigma _s$ and $\sigma _l$ for a single line cut.}}{76}{figure.caption.78}\protected@file@percent } -\newlabel{fig:evaporation_analysis}{{5.6}{76}{Example of the analysis performed on each of the recorded dots for a single line cut. (a) shows the raw AFM data before cleaning with a large amount of very bright contaminant particles. (b) shows the cleaned image, as well as the line cut \textcolor {tab_green}{(green)} from which the line cut data (c) was obtained. The black lines in (b) show how multiple line cuts were obtained on a single image to obtain values for $\sigma _s$ and $\sigma _l$. 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The dot chosen depended on measurement condition such as contamination and phase characteristics of the dot. The data shows the smaller penumbra $\sigma _s$ (\subref {fig:evaporation_measured_penumbra_sigs}) the larger penumbra $\sigma _l$ (\subref {fig:evaporation_measured_penumbra_sigl}), the height of the dot (\subref {fig:evaporation_measured_penumbra_height}) and the diameter of the circle (\subref {fig:evaporation_measured_penumbra_circle_r}).}}{77}{figure.caption.79}\protected@file@percent } -\newlabel{fig:evaporation_measured_penumbra}{{5.7}{77}{Data obtained from the previously described method for each of the 5 evaporations, from evaporated dot each from the center of the field, the left, the right, the bottom and the top. The dot chosen depended on measurement condition such as contamination and phase characteristics of the dot. The data shows the smaller penumbra $\sigma _s$ (\subref {fig:evaporation_measured_penumbra_sigs}) the larger penumbra $\sigma _l$ (\subref {fig:evaporation_measured_penumbra_sigl}), the height of the dot (\subref {fig:evaporation_measured_penumbra_height}) and the diameter of the circle (\subref {fig:evaporation_measured_penumbra_circle_r})}{figure.caption.79}{}} -\@writefile{toc}{\contentsline {section}{\numberline {5.4}Tilt and deformation}{79}{section.5.4}\protected@file@percent } -\newlabel{fig:evaporation_tilts_example}{{5.8a}{79}{\relax }{figure.caption.80}{}} -\newlabel{sub@fig:evaporation_tilts_example}{{a}{79}{\relax }{figure.caption.80}{}} -\newlabel{fig:evaporation_tilts_all}{{5.8b}{79}{\relax }{figure.caption.80}{}} -\newlabel{sub@fig:evaporation_tilts_all}{{b}{79}{\relax }{figure.caption.80}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.8}{\ignorespaces Image of the reconstruction of the tilt angle for Field 3 as an example (\subref {fig:evaporation_tilts_example}) and the data given by all fields (\subref {fig:evaporation_tilts_all}). For fields 1, 4, 5 the full field scans were performed at low resolution and due to this the direction of the tilt could not be determined from the images. The only dots drawn are the high resolution AFM scans of single dots, in this case.}}{79}{figure.caption.80}\protected@file@percent } -\newlabel{fig:evaporation_tilts}{{5.8}{79}{Image of the reconstruction of the tilt angle for Field 3 as an example (\subref {fig:evaporation_tilts_example}) and the data given by all fields (\subref {fig:evaporation_tilts_all}). For fields 1, 4, 5 the full field scans were performed at low resolution and due to this the direction of the tilt could not be determined from the images. The only dots drawn are the high resolution AFM scans of single dots, in this case}{figure.caption.80}{}} -\newlabel{fig:evaporation_SEM_sample}{{5.9a}{80}{\relax }{figure.caption.81}{}} -\newlabel{sub@fig:evaporation_SEM_sample}{{a}{80}{\relax }{figure.caption.81}{}} -\newlabel{fig:evaporation_SEM_mask}{{5.9b}{80}{\relax }{figure.caption.81}{}} -\newlabel{sub@fig:evaporation_SEM_mask}{{b}{80}{\relax }{figure.caption.81}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.9}{\ignorespaces SEM images of field 2 on the sample (\subref {fig:evaporation_SEM_sample}) and the mask (\subref {fig:evaporation_SEM_mask}) the inset shows another image of the same mask. The image of the mask was very unstable due to heavy charging effects.}}{80}{figure.caption.81}\protected@file@percent } -\newlabel{fig:evaporation_SEM}{{5.9}{80}{SEM images of field 2 on the sample (\subref {fig:evaporation_SEM_sample}) and the mask (\subref {fig:evaporation_SEM_mask}) the inset shows another image of the same mask. The image of the mask was very unstable due to heavy charging effects}{figure.caption.81}{}} -\newlabel{fig:evaporation_SEM_analysis_clog}{{5.10a}{81}{\relax }{figure.caption.82}{}} -\newlabel{sub@fig:evaporation_SEM_analysis_clog}{{a}{81}{\relax }{figure.caption.82}{}} -\newlabel{fig:evaporation_SEM_analysis_clog_overlay}{{5.10b}{81}{\relax }{figure.caption.82}{}} -\newlabel{sub@fig:evaporation_SEM_analysis_clog_overlay}{{b}{81}{\relax }{figure.caption.82}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.10}{\ignorespaces An example of the clogging noticed on $4$ of the mask holes (\subref {fig:evaporation_SEM_analysis_clog}) and the tilt direction from \ref {fig:evaporation_tilts} overlayed over the SEM image of the mask after it was rotated to match the fields.}}{81}{figure.caption.82}\protected@file@percent } -\newlabel{fig:evaporation_SEM_analysis}{{5.10}{81}{An example of the clogging noticed on $4$ of the mask holes (\subref {fig:evaporation_SEM_analysis_clog}) and the tilt direction from \ref {fig:evaporation_tilts} overlayed over the SEM image of the mask after it was rotated to match the fields}{figure.caption.82}{}} -\@writefile{toc}{\contentsline {section}{\numberline {5.5}Simulation}{81}{section.5.5}\protected@file@percent } -\newlabel{sec:simulation}{{5.5}{81}{Simulation}{section.5.5}{}} -\@writefile{toc}{\contentsline {subsection}{\numberline {5.5.1}Overview and principle}{81}{subsection.5.5.1}\protected@file@percent } -\@writefile{toc}{\contentsline {subsection}{\numberline {5.5.2}Results}{83}{subsection.5.5.2}\protected@file@percent } -\newlabel{fig:evaporation_simulation_first_compare_AFM}{{5.11a}{83}{\relax }{figure.caption.83}{}} -\newlabel{sub@fig:evaporation_simulation_first_compare_AFM}{{a}{83}{\relax }{figure.caption.83}{}} -\newlabel{fig:evaporation_simulation_first_compare_SIM}{{5.11b}{83}{\relax }{figure.caption.83}{}} -\newlabel{sub@fig:evaporation_simulation_first_compare_SIM}{{b}{83}{\relax }{figure.caption.83}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.11}{\ignorespaces Comparison of a recorded AFM image, colors are for easier identification, (a) (grains were removed using interpolation during post-processing) and a simulated evaporation (b) with parameters obtained from measurement in the AFM image. Vibrations were assumed to be harmonic during the deposition and different sticking factors of \ce {Pb}-\ce {Si} and \ce {Pb}-\ce {Pb} were not considered. The oscillation was modeled with a displacement of $0.143$ $\mu $m in x and $-0.358$ $\mu $m in z direction and a tilt of $-41.12^\circ $ in $\alpha $, $10^\circ $ in $\beta $ and $31^\circ $ in $\gamma $.}}{83}{figure.caption.83}\protected@file@percent } -\newlabel{fig:evaporation_simulation_first_compare}{{5.11}{83}{Comparison of a recorded AFM image, colors are for easier identification, (a) (grains were removed using interpolation during post-processing) and a simulated evaporation (b) with parameters obtained from measurement in the AFM image. Vibrations were assumed to be harmonic during the deposition and different sticking factors of \ce {Pb}-\ce {Si} and \ce {Pb}-\ce {Pb} were not considered. The oscillation was modeled with a displacement of $0.143$ $\mu $m in x and $-0.358$ $\mu $m in z direction and a tilt of $-41.12^\circ $ in $\alpha $, $10^\circ $ in $\beta $ and $31^\circ $ in $\gamma $}{figure.caption.83}{}} +\@writefile{toc}{\contentsline {section}{\numberline {5.1}Evaporation configuration}{67}{section.5.1}\protected@file@percent } +\@writefile{lof}{\contentsline {figure}{\numberline {5.1}{\ignorespaces The approach curve measured for Field 1 until full contact. Since the 3 capacitance sensors appear correlated and the uncertainty on C2 and C3 is an order of magnitude larger than the difference of the current to the last step, C1 was used for alignment primarily.}}{67}{figure.caption.74}\protected@file@percent } +\newlabel{fig:evaporation_approach_curve}{{5.1}{67}{The approach curve measured for Field 1 until full contact. Since the 3 capacitance sensors appear correlated and the uncertainty on C2 and C3 is an order of magnitude larger than the difference of the current to the last step, C1 was used for alignment primarily}{figure.caption.74}{}} +\@writefile{lot}{\contentsline {table}{\numberline {5.1}{\ignorespaces Table with all the evaporation parameters. FIL stands for the current applied to the heating Filament, EMIS stands for the emission current, FLUX is the measured molecular flux. Press is the maximum pressure in the chamber during the evaporation, and T is the maximal temperature the crucible reached during the evaporation. The voltage was changed to ensure FLUX was in the desired range between $450-520$}}{68}{table.caption.75}\protected@file@percent } +\newlabel{tab:evaporation_settings}{{5.1}{68}{Table with all the evaporation parameters. FIL stands for the current applied to the heating Filament, EMIS stands for the emission current, FLUX is the measured molecular flux. 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The voltage was changed to ensure FLUX was in the desired range between $450-520$}{table.caption.75}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {5.2}{\ignorespaces The Mask Aligner chamber configuration during evaporation.}}{68}{figure.caption.76}\protected@file@percent } +\newlabel{fig:evaporation_chamber_status}{{5.2}{68}{The Mask Aligner chamber configuration during evaporation}{figure.caption.76}{}} +\newlabel{fig:Evaporation_diagramm_sample_img}{{5.3a}{69}{\relax }{figure.caption.77}{}} +\newlabel{sub@fig:Evaporation_diagramm_sample_img}{{a}{69}{\relax }{figure.caption.77}{}} +\newlabel{fig:Evaporation_diagramm_mask_img}{{5.3b}{69}{\relax }{figure.caption.77}{}} +\newlabel{sub@fig:Evaporation_diagramm_mask_img}{{b}{69}{\relax }{figure.caption.77}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {5.3}{\ignorespaces Diagram showing the Evaporation performed on the sample (\subref {fig:Evaporation_diagramm_sample_img}). Red squares represent the positions of the evaporated fields. The number shows the order of evaporations. Distances are measured using an optical microscope. Fields are at a $10^\circ $ angle with respect to the sample holder. (\subref {fig:Evaporation_diagramm_mask_img}) shows a microscope image of the mask taken before evaporation. The mask holder is placed straight in the microscope. The mask itself is angled on the mask holder.}}{69}{figure.caption.77}\protected@file@percent } +\newlabel{fig:Evaporation_diagramm}{{5.3}{69}{Diagram showing the Evaporation performed on the sample (\subref {fig:Evaporation_diagramm_sample_img}). Red squares represent the positions of the evaporated fields. The number shows the order of evaporations. Distances are measured using an optical microscope. Fields are at a $10^\circ $ angle with respect to the sample holder. (\subref {fig:Evaporation_diagramm_mask_img}) shows a microscope image of the mask taken before evaporation. The mask holder is placed straight in the microscope. The mask itself is angled on the mask holder}{figure.caption.77}{}} +\@writefile{toc}{\contentsline {section}{\numberline {5.2}Contamination}{70}{section.5.2}\protected@file@percent } +\newlabel{fig:evaporation_contamination_img}{{5.4a}{70}{\relax }{figure.caption.78}{}} +\newlabel{sub@fig:evaporation_contamination_img}{{a}{70}{\relax }{figure.caption.78}{}} +\newlabel{fig:evaporation_contamination_anal}{{5.4b}{70}{\relax }{figure.caption.78}{}} +\newlabel{sub@fig:evaporation_contamination_anal}{{b}{70}{\relax }{figure.caption.78}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {5.4}{\ignorespaces (\subref {fig:evaporation_contamination_img}) shows an AFM image of field $3$ without any grain removal applied. Data was obtained on multiple different spots on the sample. 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The \textcolor {tab_blue}{blue} lines are the major $a$ and minor $b$ axis of the ellipse formed on the evaporated dot. Inset shows the same image in the phase data. The data stems from Evaporation 5 In Chapter 5. (\subref {fig:Evaporation_diagramm_field}) shows an AFM image of the top right part of the evaporated field labeled $3$. Grains were reduced using post-processing. Black circles show the dots chosen for further examination on this particular field.}}{71}{figure.caption.79}\protected@file@percent } +\newlabel{fig:penumbra_tilt_sigmas_and_field_show}{{5.5}{71}{AFM image of evaporated \ce {Pb} dot (\subref {fig:penumbra_tilt_sigmas}) illustrating the penumbral widths used for evaporation analysis $\sigma _s$ and $\sigma _l$, depicted in \textcolor {tab_red}{red}, and the major axis of the tilt \textcolor {tab_green}{(green)}. $\sigma _s$ is drawn larger than actually measured, since the measured value would be hardly visible. The \textcolor {tab_blue}{blue} lines are the major $a$ and minor $b$ axis of the ellipse formed on the evaporated dot. Inset shows the same image in the phase data. The data stems from Evaporation 5 In Chapter 5. (\subref {fig:Evaporation_diagramm_field}) shows an AFM image of the top right part of the evaporated field labeled $3$. Grains were reduced using post-processing. Black circles show the dots chosen for further examination on this particular field}{figure.caption.79}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {5.6}{\ignorespaces Example of the analysis performed on each of the recorded dots for a single line cut. (a) shows the raw AFM data before cleaning with a large amount of very bright contaminant particles. (b) shows the cleaned image, as well as the line cut \textcolor {tab_green}{(green)} from which the line cut data (c) was obtained. 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The fit parameters are the two different penumbra widths induced by the tilt $\sigma _s$ and $\sigma _l$ for a single line cut}{figure.caption.80}{}} +\newlabel{fig:evaporation_measured_penumbra_sigs}{{5.7a}{74}{\relax }{figure.caption.81}{}} +\newlabel{sub@fig:evaporation_measured_penumbra_sigs}{{a}{74}{\relax }{figure.caption.81}{}} +\newlabel{fig:evaporation_measured_penumbra_sigl}{{5.7b}{74}{\relax }{figure.caption.81}{}} +\newlabel{sub@fig:evaporation_measured_penumbra_sigl}{{b}{74}{\relax }{figure.caption.81}{}} +\newlabel{fig:evaporation_measured_penumbra_height}{{5.7c}{74}{\relax }{figure.caption.81}{}} +\newlabel{sub@fig:evaporation_measured_penumbra_height}{{c}{74}{\relax }{figure.caption.81}{}} +\newlabel{fig:evaporation_measured_penumbra_circle_r}{{5.7d}{74}{\relax }{figure.caption.81}{}} +\newlabel{sub@fig:evaporation_measured_penumbra_circle_r}{{d}{74}{\relax }{figure.caption.81}{}} +\@writefile{lof}{\contentsline {figure}{\numberline {5.7}{\ignorespaces Data obtained from the previously described method for each of the 5 evaporations, from evaporated dot each from the center of the field, the left, the right, the bottom and the top. The dot chosen depended on measurement condition such as contamination and phase characteristics of the dot. The data shows the smaller penumbra $\sigma _s$ (\subref {fig:evaporation_measured_penumbra_sigs}) the larger penumbra $\sigma _l$ (\subref {fig:evaporation_measured_penumbra_sigl}), the height of the dot (\subref {fig:evaporation_measured_penumbra_height}) and the diameter of the circle (\subref {fig:evaporation_measured_penumbra_circle_r}).}}{74}{figure.caption.81}\protected@file@percent } +\newlabel{fig:evaporation_measured_penumbra}{{5.7}{74}{Data obtained from the previously described method for each of the 5 evaporations, from evaporated dot each from the center of the field, the left, the right, the bottom and the top. The dot chosen depended on measurement condition such as contamination and phase characteristics of the dot. 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The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}}{figure.caption.85}{}} -\newlabel{fig:evaporation_simulation_rejection_prev}{{5.14a}{86}{\relax }{figure.caption.86}{}} -\newlabel{sub@fig:evaporation_simulation_rejection_prev}{{a}{86}{\relax }{figure.caption.86}{}} -\newlabel{fig:evaporation_simulation_rejection_after}{{5.14b}{86}{\relax }{figure.caption.86}{}} -\newlabel{sub@fig:evaporation_simulation_rejection_after}{{b}{86}{\relax }{figure.caption.86}{}} -\newlabel{fig:evaporation_simulation_rejection_comparison}{{5.14c}{86}{\relax }{figure.caption.86}{}} -\newlabel{sub@fig:evaporation_simulation_rejection_comparison}{{c}{86}{\relax }{figure.caption.86}{}} -\@writefile{lof}{\contentsline {figure}{\numberline {5.14}{\ignorespaces Simulated evaporation dots without (\subref {fig:evaporation_simulation_rejection_prev}) and with (\subref {fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. 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With this, the initially failing performance of the Mask Aligner was improved. +Mask Aligner functionality was restored and measures were taken to prevent further failure. +Maintenance procedures for certain potential faults of the Mask Aligner system were established and applied to the Mask Aligner. Potential sources of cross capacitances on the Mask Aligner were investigated and likely candidates for sources of cross capacitance were found on the Mask holders/shuttles, with the Mask Aligner itself found to be negligible in the creation of cross capacitance. \\ Further research will have to be done on the prevention of faults in the mask preparation procedure, as issues with leakage currents created in the process of mask bonding were found to be the likely reason for large correlations in the capacitance sensors of the Mask Aligner. \\ diff --git a/img/CalibrationUHV_Z1.png b/img/CalibrationUHV_Z1.png index db94b8376cea84a5f390026f3855ce032e8a2510..f254514079e4ed18bfcd87b31409a81ee0e1d11e 100644 Binary files a/img/CalibrationUHV_Z1.png and b/img/CalibrationUHV_Z1.png differ diff --git a/img/CalibrationUHV_Z2_Z3.png b/img/CalibrationUHV_Z2_Z3.png index 56ec301d3e763f26a4b65c8efbb0838f08dfd9b5..a7a5011edc403a71d9622a68af839f76f6cb5a01 100644 Binary files a/img/CalibrationUHV_Z2_Z3.png and b/img/CalibrationUHV_Z2_Z3.png differ diff --git a/img/CameraAlignment_bad_low.pdf b/img/CameraAlignment_bad_low.pdf new file mode 100644 index 0000000000000000000000000000000000000000..7f5223665808ababe12870c634a8a22242aba7e8 Binary files /dev/null and b/img/CameraAlignment_bad_low.pdf differ diff --git a/img/MA/Calibration_screw_image.pdf b/img/MA/Calibration_screw_image.pdf new file mode 100644 index 0000000000000000000000000000000000000000..b80d211880cd3eee761f61f9bfb96bf75ff93aa1 Binary files /dev/null and b/img/MA/Calibration_screw_image.pdf differ diff --git a/img/MA/Mask.pdf b/img/MA/Mask.pdf index 3d872caf821c5ebb309a69e4cd3e7e3be30c9c88..c06b795ca2934bfca000bfc6a7611cb36f816b98 100644 Binary files a/img/MA/Mask.pdf and b/img/MA/Mask.pdf differ diff --git a/img/MA/NomenclatureMaskAlignerCrossSec.pdf b/img/MA/NomenclatureMaskAlignerCrossSec.pdf index c12e3cea94abbbab2b71a58cef6788ba3066b6f0..17eb867e820a95d791dd9aec1edd9371750750eb 100644 Binary files a/img/MA/NomenclatureMaskAlignerCrossSec.pdf and b/img/MA/NomenclatureMaskAlignerCrossSec.pdf differ diff --git a/img/MaskAlignerChamber.pdf b/img/MaskAlignerChamber.pdf index 6c5e0083631ec8f22fd38b70d980d6474b4a65b3..7471cfc88828ed9427a29e16d555dad9c45a1b87 100644 Binary files a/img/MaskAlignerChamber.pdf and b/img/MaskAlignerChamber.pdf differ diff --git a/img/Plots/Calibrations/screw_diff_explain.pdf b/img/Plots/Calibrations/screw_diff_explain.pdf index 3a4cf3c33f1e0c32827ce23ddf77fe757635fce7..3250013a07da687d42abfb63f819b72dbc943166 100644 Binary files a/img/Plots/Calibrations/screw_diff_explain.pdf and b/img/Plots/Calibrations/screw_diff_explain.pdf differ diff --git a/pdfa.xmpi b/pdfa.xmpi index 8177f43b6ab2f5df83afdd3c3d1cd0fff02fd15b..fb23ebb70c3c28f32d0fd7cc079cb2d5ac05f27b 100644 --- a/pdfa.xmpi +++ b/pdfa.xmpi @@ -73,15 +73,15 @@ </rdf:Description> <rdf:Description rdf:about="" xmlns:xmp="http://ns.adobe.com/xap/1.0/"> <xmp:CreatorTool>LaTeX with hyperref</xmp:CreatorTool> - <xmp:ModifyDate>2024-08-30T00:43:23+02:00</xmp:ModifyDate> - <xmp:CreateDate>2024-08-30T00:43:23+02:00</xmp:CreateDate> - <xmp:MetadataDate>2024-08-30T00:43:23+02:00</xmp:MetadataDate> + <xmp:ModifyDate>2024-09-14T21:09:36+02:00</xmp:ModifyDate> + <xmp:CreateDate>2024-09-14T21:09:36+02:00</xmp:CreateDate> + <xmp:MetadataDate>2024-09-14T21:09:36+02:00</xmp:MetadataDate> </rdf:Description> <rdf:Description rdf:about="" xmlns:xmpRights = "http://ns.adobe.com/xap/1.0/rights/"> </rdf:Description> <rdf:Description rdf:about="" xmlns:xmpMM="http://ns.adobe.com/xap/1.0/mm/"> <xmpMM:DocumentID>uuid:C8CFC28F-88E1-7995-E9AD-F6D12EAD346B</xmpMM:DocumentID> - <xmpMM:InstanceID>uuid:46489E29-E6EB-C566-12FE-346A30C0B508</xmpMM:InstanceID> + <xmpMM:InstanceID>uuid:BCDBD80E-F135-A467-0BD0-1FD3D1DEF069</xmpMM:InstanceID> </rdf:Description> </rdf:RDF> </x:xmpmeta> diff --git a/preface.aux b/preface.aux index f1dadcfbac4290733fdf91a89eaf9d74395a9581..bd38dd4006c82d25edc9b07ec5002feb28621763 100644 --- a/preface.aux +++ b/preface.aux @@ -7,7 +7,7 @@ \citation{Olschewski,Bhaskar} \@writefile{toc}{\contentsline {chapter}{Introduction}{3}{chapter*.2}\protected@file@percent } \@setckpt{preface}{ -\setcounter{page}{5} +\setcounter{page}{4} \setcounter{equation}{0} \setcounter{enumi}{0} \setcounter{enumii}{0} diff --git a/preface.tex b/preface.tex index 4d4604198077cc363f9da756e0e8dc52bb5d0bb0..644b6ff1d6eae025d3578a97e2f8a687c7a03523 100644 --- a/preface.tex +++ b/preface.tex @@ -1,10 +1,10 @@ \chapter*{Introduction} \addcontentsline{toc}{chapter}{Introduction} -In condensed matter physics, precise fabrication of nanostructures with sharp patterns is paramount for research in various fields like electronics, photonics and quantum computing among others. One problem, that is highly sought after in quantum computing, is the creation of Majorana Zero Modes, as these could potentially provide a stable and controllable way to encode information. \textbf{M}ajorana \textbf{Z}ero \textbf{M}odes (MZM) are quasi particles that behave like Majorana fermions with non-Abelian statistics. MZMs are predicted to emerge at the core of vortices at superconductor/topological insulator interfaces~\cite{majorana_zero_modes}. These interfaces require pristine conditions and at the same time the small patterns, that are smaller than the coherence length ($<100$ nm) of the superconductor, required to create the vortices need high accuracy. \\ -Atmospheric conditions typically damage surface properties of the required samples. Due to this \textbf{U}ltra \textbf{H}igh \textbf{V}accuum (UHV) conditions are required for the sample. This often limits the pattern creation process, as exposure to ambient conditions or other chemicals are required. \\ -Many substrate patterning methods like \textbf{E}lectron \textbf{B}eam \textbf{L}ithography or \textbf{E}xtreme \linebreak \textbf{U}ltra\textbf{V}iolet \textbf{L}ithography (EUVL) or sometimes (EUV) give the required precision needed for patterning sample at the sub $100$ nm scale,~\cite{euv} but require resists, which typically contain solvents. These leave residues after the patterning process, which damage the pristine condition of the substrate. Typically, these methods can also not be performed under UHV conditions and thus may damage the sample further. \\ -Other methods of patterning superconductors on topological insulators have been proposed, but many have shortcomings that make their use impractical. There are for example scanning probe approaches,~\cite{afm_pattern} which can directly manipulate single atoms on surfaces, but that require -long timescales and expensive equipment. Additionally, many Scanning Probe approaches still require resists and development, leading to the same issues as previously mentioned lithography methods.\\ -A simple and inexpensive approach is given by stencil lithography and \textbf{P}hysical \textbf{V}apor \textbf{D}eposition (PVD), where a stencil (mask) is used to mask off a section of the sample. When the sample is hit with a molecular vapor beam, the masked off areas are protected from the impinging material and stay pristine, while the ones not protected by the stencil built patterned structures. In this method, no resist is required, and the procedure is required to be performed at UHV conditions. Resolutions of sub-$50$ nm have been achieved using stencil lithography~\cite{stencil_resolution}. \\ -Stencil lithography however has its own downside. In order to get very high resolution, the mask and the sample have to be very close together as otherwise the aperture of the mask creates a "penumbra", which can affect the final resolution of the pattern on the sample negatively. The simple and often used approach is to simply bring mask and sample into direct contact, ensuring minimal distance. This however is for the case of the creation of many interfaces not possible, since the damage the sample sustains when brought into contact with the mask would damage the condition of the sample. \\ -For this reason the Mask Aligner, the subject of this work, was designed~\cite{Olschewski, Bhaskar}. The Mask Aligner is a tool to use capacitive measurement to ensure minimal mask sample distance during PVD, while avoiding full contact with the sample, thus preserving the samples condition. This work concerns the optimization, improvement and analysis of the Mask Aligner and its capabilities, as well as work on the creation of additional electronics and software to drive the Mask Aligners operation. \ No newline at end of file +In condensed matter physics, precise fabrication of nanostructures with sharp patterns is paramount for research in various fields like electronics, photonics and quantum computing. One problem, that is highly sought after in quantum computing, is the creation of Majorana Zero Modes, as these could potentially provide a stable and controllable way to encode information. \textbf{M}ajorana \textbf{Z}ero \textbf{M}odes (MZM) are quasi particles that behave like Majorana fermions with non-Abelian statistics. MZMs are predicted to emerge at the core of vortices at superconductor/topological insulator interfaces~\cite{majorana_zero_modes}. These interfaces require pristine conditions and at the same time patterns, smaller than the coherence length ($<100$ nm) of the superconductor.\\ +Atmospheric conditions typically deteriorate surface properties of the required samples. Due to this \textbf{U}ltra \textbf{H}igh \textbf{V}accuum (UHV) conditions are required for the sample. This often limits the pattern creation process, as exposure to ambient conditions or other chemicals are required. \\ +Many methods like \textbf{E}lectron \textbf{B}eam \textbf{L}ithography or \textbf{E}xtreme \textbf{U}ltra\textbf{V}iolet \textbf{L}ithography (EUVL or EUV) give the required precision for patterning at the sub $100$ nm scale,~\cite{euv} but require resists, which typically are deposited with the help of solvents. These leave residues after the patterning process, which damage the pristine condition of the substrate. Typically, these methods can also not be performed under UHV conditions. \\ +Other methods of patterning superconductors on topological insulators have been proposed, but many have shortcomings that make their use impractical. There are for example scanning probe approaches,~\cite{afm_pattern} which can directly manipulate single atoms on surfaces, but require +long timescales and expensive equipment. Additionally, many Scanning Probe approaches still require resists, leading to the same issues as previously mentioned.\\ +A simple and inexpensive approach is stencil lithography employing \textbf{P}hysical \textbf{V}apor \\ \textbf{D}eposition (PVD), where a stencil (mask) is used to mask a section of the sample. When the sample is hit with a molecular vapor beam, the masked areas are protected from the impinging material and stay pristine, while the ones not protected built patterned structures. In this method, no resist is required, and the procedure can be performed at UHV conditions. Resolutions of sub-$50$ nm have been achieved~\cite{stencil_resolution}. \\ +Stencil lithography however has its downside. In order to get very high resolution, the mask and the sample have to be very close as otherwise the aperture of the mask creates a "penumbra", limiting the final resolution of the pattern on the sample. The simple and often used approach is to simply bring mask and sample into direct mechanical contact, ensuring minimal distance. This however can \\ +To avoid this a Mask Aligner operating in UHV, the subject of this work, was designed~\cite{Olschewski, Bhaskar}. It is a tool to use capacitive measurement to ensure minimal mask sample distance during PVD, while avoiding full contact with the sample, thus preserving surface condition. This work concerns the optimization, improvement and analysis of the Mask Aligner, as well as work on the creation of additional electronics and software to drive the Mask Aligners operation. \ No newline at end of file diff --git a/thesis.aux b/thesis.aux index 4e45ec4682a37f79ef9b2718cdd05226bb0e78a7..b84d6d6facd9e74f1b1b2a4296a4f35e3802d2f5 100644 --- a/thesis.aux +++ b/thesis.aux @@ -6,14 +6,20 @@ \@input{title.aux} \@input{preface.aux} \@input{chap01.aux} +\pgfsyspdfmark {pgfid1}{4736286}{23665603} +\pgfsyspdfmark {pgfid4}{37433768}{23686377} +\pgfsyspdfmark {pgfid5}{39282063}{23411651} \@input{chap02.aux} +\pgfsyspdfmark {pgfid6}{4736286}{50112224} +\pgfsyspdfmark {pgfid9}{37433768}{50100220} +\pgfsyspdfmark {pgfid10}{39282063}{49825494} \@input{chap03.aux} \@input{chap04.aux} \@input{chap05.aux} \@input{conclusion.aux} \@input{bibliography.aux} -\@writefile{toc}{\contentsline {chapter}{List of Abbreviations}{94}{chapter*.90}\protected@file@percent } +\@writefile{toc}{\contentsline {chapter}{List of Abbreviations}{91}{chapter*.92}\protected@file@percent } \@input{appendix.aux} \@input{acknowledgments.aux} \providecommand\NAT@force@numbers{}\NAT@force@numbers -\gdef \@abspage@last{104} +\gdef \@abspage@last{101} diff --git a/thesis.log b/thesis.log index 51d640a277bf8ed98181b623f3b14a5579a60cbc..9021948e52799a9b7724f8b07b0adbe395be3cfb 100644 --- a/thesis.log +++ b/thesis.log @@ -1,4 +1,4 @@ -This is pdfTeX, Version 3.141592653-2.6-1.40.24 (MiKTeX 22.7) (preloaded format=pdflatex 2024.7.28) 30 AUG 2024 00:43 +This is pdfTeX, Version 3.141592653-2.6-1.40.24 (MiKTeX 22.7) (preloaded format=pdflatex 2024.7.28) 14 SEP 2024 21:09 entering extended mode restricted \write18 enabled. %&-line parsing enabled. @@ -1575,7 +1575,7 @@ pdfTeX warning (ext4): destination with the same identifier (name{page.1}) has been already used, duplicate ignored <to be read again> \relax -l.56 ... repairs and optimizations}{55}{chapter.4} +l.57 ... repairs and optimizations}{52}{chapter.4} % [1 @@ -1591,725 +1591,718 @@ l.56 ... repairs and optimizations}{55}{chapter.4} \openout2 = `preface.aux'. 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The At-mel | SMART SAM3X/A se- [] @@ -3004,14 +2992,14 @@ oads / en / DeviceDoc / )) -[93] +[90] Underfull \hbox (badness 10000) in paragraph at lines 150--171 [] -[94 +[91 @@ -3024,14 +3012,14 @@ pdfTeX warning (ext4): destination with the same identifier (name{section.5.1}) <to be read again> \relax l.8 \section{LockIn amplifier settings} - \label{sec:app_lock_in} + \label{app:lock_in} pdfTeX warning (ext4): destination with the same identifier (name{section.5.2}) has been already used, duplicate ignored <to be read again> \relax l.28 \section{Walker principle diagram} \label{app:walker_diagram} -<img/ElectronicsDiagramm.pdf, id=3987, 778.32848pt x 492.10774pt> +<img/ElectronicsDiagramm.pdf, id=4007, 778.32848pt x 492.10774pt> File: img/ElectronicsDiagramm.pdf Graphic file (type pdf) <use img/ElectronicsDiagramm.pdf> Package pdftex.def Info: img/ElectronicsDiagramm.pdf used on input line 31. @@ -3052,7 +3040,7 @@ l.36 \section{Walker circuit diagrams} pdfTeX warning: pdflatex.exe (file ./img/Plots/Walker/MaskAlign Walker Signalel ektronik 1.0.pdf): PDF inclusion: found PDF version <1.7>, but at most version <1.5> allowed -<img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf, id=3993, 845.07724 +<img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf, id=4013, 845.07724 pt x 597.55246pt> File: img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf Graphic file ( type pdf) @@ -3081,7 +3069,7 @@ ektronik 1.0.pdf): PDF inclusion: found PDF version <1.7>, but at most version pdfTeX warning: pdflatex.exe (file ./img/Plots/Walker/MaskAlign Walker Signalel ektronik 1.0.pdf): PDF inclusion: found PDF version <1.7>, but at most version <1.5> allowed -<img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf, id=3996, page=1, 8 +<img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf, id=4016, page=1, 8 45.07724pt x 597.55246pt> File: img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf Graphic file ( type pdf) @@ -3125,7 +3113,7 @@ Package pdftex.def Info: img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0 pdfTeX warning: pdflatex.exe (file ./img/Plots/Walker/MaskAlign Walker Signalel ektronik 1.0.pdf): PDF inclusion: found PDF version <1.7>, but at most version <1.5> allowed -<img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf, id=4070, page=2, 8 +<img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf, id=4089, page=2, 8 45.07724pt x 597.55246pt> File: img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0.pdf Graphic file ( type pdf) @@ -3154,7 +3142,7 @@ Package pdftex.def Info: img/Plots/Walker/MaskAlign Walker Signalelektronik 1.0 pdfTeX warning: pdflatex.exe (file ./img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf): PDF inclusion: found PDF version <1.7>, but at mo st version <1.5> allowed -<img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf, id=4075 +<img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf, id=4094 , 1194.98447pt x 845.07724pt> File: img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf Gra phic file (type pdf) @@ -3183,7 +3171,7 @@ st version <1.5> allowed pdfTeX warning: pdflatex.exe (file ./img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf): PDF inclusion: found PDF version <1.7>, but at mo st version <1.5> allowed -<img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf, id=4078 +<img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf, id=4097 , page=1, 1194.98447pt x 845.07724pt> File: img/Plots/Walker/MaskAlign Walker Netzteil modifiziert 24-05-2024.pdf Gra phic file (type pdf) @@ -3252,32 +3240,24 @@ l.68 \section{Raycast Simulation} -] - 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evaporator}{7}{subsection.1.1.1}% -\contentsline {section}{\numberline {1.2}Stencil lithography}{8}{section.1.2}% -\contentsline {subsubsection}{Penumbra}{9}{section*.5}% -\contentsline {subsubsection}{Tilt induced penumbra}{11}{section*.7}% -\contentsline {section}{\numberline {1.3}Measurement techniques}{12}{section.1.3}% -\contentsline {subsection}{\numberline {1.3.1}Atomic Force Microscopy}{12}{subsection.1.3.1}% -\contentsline {subsubsection}{Modes}{13}{section*.10}% -\contentsline {paragraph}{Contact}{13}{section*.11}% -\contentsline {paragraph}{Non-Contact}{13}{section*.12}% -\contentsline {paragraph}{Tapping}{14}{section*.13}% -\contentsline {subsection}{\numberline {1.3.2}Scanning Electron Microscopy}{15}{subsection.1.3.2}% -\contentsline {chapter}{\numberline {2}Mask Aligner}{18}{chapter.2}% -\contentsline {section}{\numberline {2.1}Molecular beam evaporation chamber}{20}{section.2.1}% -\contentsline {section}{\numberline {2.2}Shadow mask alignment}{21}{section.2.2}% -\contentsline {subsection}{\numberline {2.2.1}Motor calibration}{21}{subsection.2.2.1}% -\contentsline {subsection}{\numberline {2.2.2}Optical alignment}{27}{subsection.2.2.2}% -\contentsline {subsection}{\numberline {2.2.3}Approach curves}{29}{subsection.2.2.3}% -\contentsline {subsection}{\numberline {2.2.4}Reproducibility}{33}{subsection.2.2.4}% -\contentsline {subsubsection}{Reproducibility when removing sample/mask}{33}{section*.30}% -\contentsline {subsection}{\numberline {2.2.5}Cross capacitances}{35}{subsection.2.2.5}% -\contentsline {paragraph}{Leakage current}{40}{section*.38}% -\contentsline {paragraph}{Improved gold pin fitting}{40}{section*.39}% -\contentsline {subsection}{\numberline {2.2.6}Stop Conditions}{40}{subsection.2.2.6}% -\contentsline {paragraph}{High correlation between capacitance curves}{41}{section*.40}% -\contentsline {paragraph}{Low correlation between capacitance curves}{41}{section*.41}% -\contentsline {section}{\numberline {2.3}Mask Aligner operation}{41}{section.2.3}% -\contentsline {subsection}{\numberline {2.3.1}Sample preparation}{41}{subsection.2.3.1}% -\contentsline {chapter}{\numberline {3}Electronics}{43}{chapter.3}% -\contentsline {section}{\numberline {3.1}Slip stick principle}{43}{section.3.1}% -\contentsline {section}{\numberline {3.2}RHK}{44}{section.3.2}% -\contentsline {subsection}{\numberline {3.2.1}Overview}{44}{subsection.3.2.1}% -\contentsline {paragraph}{amplitude}{44}{section*.43}% -\contentsline {paragraph}{sweep period}{44}{section*.44}% -\contentsline {paragraph}{time between sweeps}{44}{section*.45}% -\contentsline {subsection}{\numberline {3.2.2}Pulse shape}{44}{subsection.3.2.2}% -\contentsline {section}{\numberline {3.3}KIM001}{45}{section.3.3}% -\contentsline {subsection}{\numberline {3.3.1}Overview}{45}{subsection.3.3.1}% -\contentsline {subsection}{\numberline {3.3.2}Pulse shape}{45}{subsection.3.3.2}% -\contentsline {subsection}{\numberline {3.3.3}Voltage behavior}{46}{subsection.3.3.3}% -\contentsline {section}{\numberline {3.4}Mask Aligner controller "Walker"}{47}{section.3.4}% -\contentsline {subsection}{\numberline {3.4.1}Overview}{47}{subsection.3.4.1}% -\contentsline {subsection}{\numberline {3.4.2}Signal generation}{48}{subsection.3.4.2}% -\contentsline {subsection}{\numberline {3.4.3}Fast flank}{49}{subsection.3.4.3}% -\contentsline {subsection}{\numberline {3.4.4}Amplification}{50}{subsection.3.4.4}% -\contentsline {subsection}{\numberline {3.4.5}Parameters}{50}{subsection.3.4.5}% -\contentsline {paragraph}{Amplitude (amp)}{50}{section*.52}% -\contentsline {paragraph}{Voltage (volt)}{51}{section*.53}% -\contentsline {paragraph}{Channel}{51}{section*.54}% -\contentsline {paragraph}{Max Step}{51}{section*.55}% -\contentsline {paragraph}{Polarity}{51}{section*.56}% -\contentsline {subsection}{\numberline {3.4.6}Measured pulse shape}{51}{subsection.3.4.6}% -\contentsline {subsection}{\numberline {3.4.7}Driving the Mask Aligner}{53}{subsection.3.4.7}% -\contentsline {chapter}{\numberline {4}Mask Aligner repairs and optimizations}{55}{chapter.4}% -\contentsline {section}{\numberline {4.1}Overview}{55}{section.4.1}% -\contentsline {section}{\numberline {4.2}General UHV device preparation}{56}{section.4.2}% -\contentsline {subsection}{\numberline {4.2.1}Adding components}{56}{subsection.4.2.1}% -\contentsline {subsection}{\numberline {4.2.2}Soldering}{56}{subsection.4.2.2}% -\contentsline {section}{\numberline {4.3}Soldering anchors}{57}{section.4.3}% -\contentsline {section}{\numberline {4.4}Piezo re-gluing}{60}{section.4.4}% -\contentsline {section}{\numberline {4.5}Z3 motor}{62}{section.4.5}% -\contentsline {subsection}{\numberline {4.5.1}Front plate repair}{63}{subsection.4.5.1}% -\contentsline {subsection}{\numberline {4.5.2}Small capacitance stack}{66}{subsection.4.5.2}% -\contentsline {section}{\numberline {4.6}Feed through cabling optimizations}{67}{section.4.6}% -\contentsline {section}{\numberline {4.7}Final test}{68}{section.4.7}% -\contentsline {chapter}{\numberline {5}Evaporations and measurement}{70}{chapter.5}% -\contentsline {section}{\numberline {5.1}Evaporation configuration}{70}{section.5.1}% -\contentsline {section}{\numberline {5.2}Contamination}{73}{section.5.2}% -\contentsline {section}{\numberline {5.3}Penumbra}{74}{section.5.3}% -\contentsline {section}{\numberline {5.4}Tilt and deformation}{79}{section.5.4}% -\contentsline {section}{\numberline {5.5}Simulation}{81}{section.5.5}% -\contentsline {subsection}{\numberline {5.5.1}Overview and principle}{81}{subsection.5.5.1}% -\contentsline {subsection}{\numberline {5.5.2}Results}{83}{subsection.5.5.2}% -\contentsline {subsection}{\numberline {5.5.3}Software improvements}{87}{subsection.5.5.3}% -\contentsline {subsection}{\numberline {5.5.4}Final Remark}{88}{subsection.5.5.4}% -\contentsline {chapter}{Conclusions and Outlook}{89}{chapter*.88}% -\contentsline {chapter}{Bibliography}{91}{chapter*.89}% -\contentsline {chapter}{List of Abbreviations}{94}{chapter*.90}% -\contentsline {chapter}{Appendix}{i}{chapter*.91}% +\contentsline {chapter}{\numberline {1}Mask Aligner background}{4}{chapter.1}% +\contentsline {section}{\numberline {1.1}Electron beam evaporation}{4}{section.1.1}% +\contentsline {section}{\numberline {1.2}Stencil lithography}{6}{section.1.2}% +\contentsline {subsubsection}{Penumbra}{6}{section*.5}% +\contentsline {subsubsection}{Tilt induced penumbra}{8}{section*.7}% +\contentsline {section}{\numberline {1.3}Measurement techniques}{8}{section.1.3}% +\contentsline {subsection}{\numberline {1.3.1}Atomic Force Microscopy}{9}{subsection.1.3.1}% +\contentsline {subsubsection}{Modes}{9}{section*.10}% +\contentsline {paragraph}{Contact}{10}{section*.11}% +\contentsline {paragraph}{Non-Contact}{10}{section*.12}% +\contentsline {paragraph}{Tapping}{10}{section*.13}% +\contentsline {subsection}{\numberline {1.3.2}Scanning Electron Microscopy}{11}{subsection.1.3.2}% +\contentsline {chapter}{\numberline {2}Mask Aligner}{14}{chapter.2}% +\contentsline {section}{\numberline {2.1}Molecular beam evaporation chamber}{14}{section.2.1}% +\contentsline {subsection}{\numberline {2.1.1}Lead evaporator}{15}{subsection.2.1.1}% +\contentsline {section}{\numberline {2.2}Slip stick principle}{18}{section.2.2}% +\contentsline {section}{\numberline {2.3}Shadow mask alignment}{19}{section.2.3}% +\contentsline {subsection}{\numberline {2.3.1}Motor screw configuration}{19}{subsection.2.3.1}% +\contentsline {subsection}{\numberline {2.3.2}Motor calibration}{20}{subsection.2.3.2}% +\contentsline {subsection}{\numberline {2.3.3}Optical alignment}{25}{subsection.2.3.3}% +\contentsline {subsection}{\numberline {2.3.4}Approach curves}{27}{subsection.2.3.4}% +\contentsline {subsection}{\numberline {2.3.5}Reproducibility}{31}{subsection.2.3.5}% +\contentsline {subsubsection}{Reproducibility when removing sample/mask}{31}{section*.33}% +\contentsline {subsection}{\numberline {2.3.6}Cross capacitances}{33}{subsection.2.3.6}% +\contentsline {paragraph}{Leakage current}{38}{section*.41}% +\contentsline {paragraph}{Improved gold pin fitting}{38}{section*.42}% +\contentsline {subsection}{\numberline {2.3.7}Stop Conditions}{38}{subsection.2.3.7}% +\contentsline {paragraph}{High correlation between capacitance curves}{39}{section*.43}% +\contentsline {paragraph}{Low correlation between capacitance curves}{39}{section*.44}% +\contentsline {section}{\numberline {2.4}Mask Aligner operation}{39}{section.2.4}% +\contentsline {subsection}{\numberline {2.4.1}Sample preparation}{39}{subsection.2.4.1}% +\contentsline {chapter}{\numberline {3}Electronics}{41}{chapter.3}% +\contentsline {section}{\numberline {3.1}RHK}{41}{section.3.1}% +\contentsline {subsection}{\numberline {3.1.1}Overview}{41}{subsection.3.1.1}% +\contentsline {paragraph}{amplitude}{41}{section*.45}% +\contentsline {paragraph}{sweep period}{41}{section*.46}% +\contentsline {paragraph}{time between sweeps}{41}{section*.47}% +\contentsline {subsection}{\numberline {3.1.2}Pulse shape}{41}{subsection.3.1.2}% +\contentsline {section}{\numberline {3.2}KIM001}{42}{section.3.2}% +\contentsline {subsection}{\numberline {3.2.1}Overview}{42}{subsection.3.2.1}% +\contentsline {subsection}{\numberline {3.2.2}Pulse shape}{42}{subsection.3.2.2}% +\contentsline {subsection}{\numberline {3.2.3}Voltage behavior}{43}{subsection.3.2.3}% +\contentsline {section}{\numberline {3.3}Mask Aligner controller "Walker"}{44}{section.3.3}% +\contentsline {subsection}{\numberline {3.3.1}Overview}{44}{subsection.3.3.1}% +\contentsline {subsection}{\numberline {3.3.2}Signal generation}{45}{subsection.3.3.2}% +\contentsline {subsection}{\numberline {3.3.3}Fast flank}{46}{subsection.3.3.3}% +\contentsline {subsection}{\numberline {3.3.4}Amplification}{47}{subsection.3.3.4}% +\contentsline {subsection}{\numberline {3.3.5}Parameters}{47}{subsection.3.3.5}% +\contentsline {paragraph}{Amplitude (amp)}{47}{section*.54}% +\contentsline {paragraph}{Voltage (volt)}{48}{section*.55}% +\contentsline {paragraph}{Channel}{48}{section*.56}% +\contentsline {paragraph}{Max Step}{48}{section*.57}% +\contentsline {paragraph}{Polarity}{48}{section*.58}% +\contentsline {subsection}{\numberline {3.3.6}Measured pulse shape}{48}{subsection.3.3.6}% +\contentsline {subsection}{\numberline {3.3.7}Driving the Mask Aligner}{50}{subsection.3.3.7}% +\contentsline {chapter}{\numberline {4}Mask Aligner repairs and optimizations}{52}{chapter.4}% +\contentsline {section}{\numberline {4.1}Overview}{52}{section.4.1}% +\contentsline {section}{\numberline {4.2}General UHV device preparation}{53}{section.4.2}% +\contentsline {subsection}{\numberline {4.2.1}Adding components}{53}{subsection.4.2.1}% +\contentsline {subsection}{\numberline {4.2.2}Soldering}{53}{subsection.4.2.2}% +\contentsline {section}{\numberline {4.3}Soldering anchors}{54}{section.4.3}% +\contentsline {section}{\numberline {4.4}Piezo re-gluing}{57}{section.4.4}% +\contentsline {section}{\numberline {4.5}Z3 motor}{59}{section.4.5}% +\contentsline {subsection}{\numberline {4.5.1}Front plate repair}{60}{subsection.4.5.1}% +\contentsline {subsection}{\numberline {4.5.2}Small capacitance stack}{63}{subsection.4.5.2}% +\contentsline {section}{\numberline {4.6}Feed through cabling optimizations}{64}{section.4.6}% +\contentsline {section}{\numberline {4.7}Final test}{65}{section.4.7}% +\contentsline {chapter}{\numberline {5}Evaporations and measurement}{67}{chapter.5}% +\contentsline {section}{\numberline {5.1}Evaporation configuration}{67}{section.5.1}% +\contentsline {section}{\numberline {5.2}Contamination}{70}{section.5.2}% +\contentsline {section}{\numberline {5.3}Penumbra}{71}{section.5.3}% +\contentsline {section}{\numberline {5.4}Tilt and deformation}{76}{section.5.4}% +\contentsline {section}{\numberline {5.5}Simulation}{78}{section.5.5}% +\contentsline {subsection}{\numberline {5.5.1}Overview and principle}{78}{subsection.5.5.1}% +\contentsline {subsection}{\numberline {5.5.2}Results}{80}{subsection.5.5.2}% +\contentsline {subsection}{\numberline {5.5.3}Software improvements}{84}{subsection.5.5.3}% +\contentsline {subsection}{\numberline {5.5.4}Final Remark}{85}{subsection.5.5.4}% +\contentsline {chapter}{Conclusions and Outlook}{86}{chapter*.90}% +\contentsline {chapter}{Bibliography}{88}{chapter*.91}% +\contentsline {chapter}{List of Abbreviations}{91}{chapter*.92}% +\contentsline {chapter}{Appendix}{i}{chapter*.93}% \contentsline {section}{\numberline {A}LockIn amplifier settings}{i}{section.5.1}% \contentsline {section}{\numberline {B}Walker principle diagram}{ii}{section.5.2}% \contentsline {section}{\numberline {C}Walker circuit diagrams}{ii}{section.5.3}% \contentsline {section}{\numberline {D}New driver electronics}{vi}{section.5.4}% -\contentsline {paragraph}{pulse?}{vi}{section*.94}% -\contentsline {paragraph}{pol x}{vi}{section*.95}% -\contentsline {paragraph}{amp x}{vi}{section*.96}% -\contentsline {paragraph}{volt x}{vi}{section*.97}% -\contentsline {paragraph}{channel x}{vi}{section*.98}% -\contentsline {paragraph}{maxmstep x}{vi}{section*.99}% -\contentsline {paragraph}{step x}{vi}{section*.100}% -\contentsline {paragraph}{mstep x}{vi}{section*.101}% -\contentsline {paragraph}{cancel}{vii}{section*.102}% -\contentsline {paragraph}{help}{vii}{section*.103}% +\contentsline {paragraph}{pulse?}{vi}{section*.96}% +\contentsline {paragraph}{pol x}{vi}{section*.97}% +\contentsline {paragraph}{amp x}{vi}{section*.98}% +\contentsline {paragraph}{volt x}{vi}{section*.99}% +\contentsline {paragraph}{channel x}{vi}{section*.100}% +\contentsline {paragraph}{maxmstep x}{vi}{section*.101}% +\contentsline {paragraph}{step x}{vi}{section*.102}% +\contentsline {paragraph}{mstep x}{vi}{section*.103}% +\contentsline {paragraph}{cancel}{vii}{section*.104}% +\contentsline {paragraph}{help}{vii}{section*.105}% \contentsline {section}{\numberline {E}Raycast Simulation}{vii}{section.5.5}% -\contentsline {paragraph}{radius\_1}{vii}{section*.104}% -\contentsline {paragraph}{angle}{vii}{section*.105}% -\contentsline {paragraph}{radius\_mask}{vii}{section*.106}% -\contentsline {paragraph}{distance\_circle\_mask}{vii}{section*.107}% -\contentsline {paragraph}{distance\_sample}{vii}{section*.108}% -\contentsline {paragraph}{rays\_per\_frame}{vii}{section*.109}% -\contentsline {paragraph}{running\_time}{vii}{section*.110}% -\contentsline {paragraph}{deposition\_gain}{vii}{section*.111}% -\contentsline {paragraph}{penalize\_deposition}{vii}{section*.112}% -\contentsline {paragraph}{first\_layer\_deposition\_prob}{vii}{section*.113}% -\contentsline {paragraph}{oscillation\_period}{vii}{section*.114}% -\contentsline {paragraph}{delay\_oscill\_time}{viii}{section*.115}% -\contentsline {paragraph}{save\_in\_progress\_images}{viii}{section*.116}% -\contentsline {paragraph}{save\_intervall}{viii}{section*.117}% -\contentsline {paragraph}{oscillation\_dir}{viii}{section*.118}% -\contentsline {paragraph}{oscillation\_rot\_s}{viii}{section*.119}% -\contentsline {paragraph}{oscillation\_rot\_e}{viii}{section*.120}% -\contentsline {paragraph}{random\_seed}{viii}{section*.121}% -\contentsline {paragraph}{x\_min, x\_max, y\_min, y\_max}{viii}{section*.122}% -\contentsline {paragraph}{resolution}{viii}{section*.123}% -\contentsline {paragraph}{path}{viii}{section*.124}% -\contentsline {chapter}{Acknowledgments}{ix}{chapter*.125}% +\contentsline {paragraph}{radius\_1}{vii}{section*.106}% +\contentsline {paragraph}{angle}{vii}{section*.107}% +\contentsline {paragraph}{radius\_mask}{vii}{section*.108}% +\contentsline {paragraph}{distance\_circle\_mask}{vii}{section*.109}% +\contentsline {paragraph}{distance\_sample}{vii}{section*.110}% +\contentsline {paragraph}{rays\_per\_frame}{vii}{section*.111}% +\contentsline {paragraph}{running\_time}{vii}{section*.112}% +\contentsline {paragraph}{deposition\_gain}{vii}{section*.113}% +\contentsline {paragraph}{penalize\_deposition}{vii}{section*.114}% +\contentsline {paragraph}{first\_layer\_deposition\_prob}{vii}{section*.115}% +\contentsline {paragraph}{oscillation\_period}{vii}{section*.116}% +\contentsline {paragraph}{delay\_oscill\_time}{viii}{section*.117}% +\contentsline {paragraph}{save\_in\_progress\_images}{viii}{section*.118}% +\contentsline {paragraph}{save\_intervall}{viii}{section*.119}% +\contentsline {paragraph}{oscillation\_dir}{viii}{section*.120}% +\contentsline {paragraph}{oscillation\_rot\_s}{viii}{section*.121}% +\contentsline {paragraph}{oscillation\_rot\_e}{viii}{section*.122}% +\contentsline {paragraph}{random\_seed}{viii}{section*.123}% +\contentsline {paragraph}{x\_min, x\_max, y\_min, y\_max}{viii}{section*.124}% +\contentsline {paragraph}{resolution}{viii}{section*.125}% +\contentsline {paragraph}{path}{viii}{section*.126}% +\contentsline {chapter}{Acknowledgments}{ix}{chapter*.127}%