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diff --git a/acknowledgments.tex b/acknowledgments.tex
index b75ed0c2e4351e55142eaa5ee5577121af1d091b..e1a2ab55b829f07ac4b3f67f51579eb2913cf236 100644
--- a/acknowledgments.tex
+++ b/acknowledgments.tex
@@ -5,20 +5,20 @@ First and foremost, I want to thank Prof. Dr. Markus Morgenstern for giving me t
I want to thank Dr. Florian Muckel for teaching me all the techniques I needed for the repairs on the mask aligner, as well as general aid in the first half of my thesis. His expertise in the workings of the group and the repair and optimization of instruments have provided me with the resources needed to be able to work on the Mask Aligner and understand its mechanical workings.
-For help with writing the software for the Walker and explanations of the existing Walker code, I want to thank Jonas Duffhaus. Without the existing codebase and explanations of how some particular parts work, the programming would have taken much longer and been more difficult.
-For the building of the mask aligner controller and patience with debugging of the Walker software, I want to thank both Paul Dinslage and Uwe Wichmann. Without them the new Walker would not exist, and the hardware problems are not within my capability to solve.
+For help with writing the software for the Walker and explanations of the existing Walker code, I want to thank Jonas Duffhaus. Without the existing codebase and explanations of how some particular parts work, the programming would have taken much longer and would have been more difficult.
+For the creation of the mask aligner controller and patience with debugging of the Walker software, I want to thank both Paul Dinslage and Uwe Wichmann. Without them the new Walker would not exist.
-I would also like to express my gratitude to my supervisors, Jonas Beeker and Dr. Priyamvada Bhaskar, for their guidance and support throughout my master’s thesis. Their feedback and expertise have, I am particularly thankful for the time they dedicated to reviewing my work and providing feedback on the outline and writing of this thesis. As well as understanding the results better and coming to a conclusion about the measurements.
+I would also like to express my gratitude to my supervisors, Jonas Beeker and Dr. Priyamvada Bhaskar, for their guidance and support throughout my master’s thesis. I am particularly thankful for the time they dedicated to reviewing my work and providing feedback on the outline and writing of this thesis. As well as understanding the results better and coming to a conclusion about the measurements.
For frequent discussion and general help, as well as the increase in pressure of my system, I want to thank Michiel Reul. Without his Gold evaporations the Mask Aligner lab would have been a lot more boring.
For help regarding AFM results and Chamber operation (Leak-testing) I would also like to thank Dr. Marcus Liebmann and Dr. Marco Pratzer.
-For help with SEM measurement and other support, I want to thank Kanji Furuta and Thorben Frahm for the additional EDX measurement and clarifications regarding SEM measurements.
+For help with SEM and EDX measurement and other support, I want to thank Kanji Furuta and Thorben Frahm.
-For the nice group atmosphere and interesting discussions I would like to thank the whole work group Jeff Strasdas, Benjamin Pestka, Michiel Reul, Tim Jacobs, Dishi Gangwar, Niklas Leuth, Marcus Eßer, Reza Habibipour.
+For the nice group atmosphere and interesting discussions I would like to thank the whole work group including Jeff Strasdas, Benjamin Pestka, Michiel Reul, Tim Jacobs, Dishi Gangwar, Niklas Leuth, Marcus Eßer and Reza Habibipour.
-For the quick work and pleasant atmosphere during the creation and repair of parts, I want to thank the entire crew of the workshop
+For the quick work and pleasant atmosphere during the creation and repair of parts, I want to thank the entire crew of the workshop.
Lastly, I want to thank my family for proofreading this thesis and providing feedback, and emotional support during the creation of this thesis. In particular, I would like to thank my father for reading the thesis in full and pointing out errors and hard to understand sections.
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-\@writefile{lof}{\contentsline {figure}{\numberline {2.16}{\ignorespaces Approach curves recorded on two different days. The second curve was recorded after retraction and subsequent approach. The 2 curves do not start at the same distance away from sample, therefore they are not aligned on the x-axis. Both are driven until full contact. Capacitance 3 exhibits noisy signal. The reason for this is unknown.}}{32}{figure.caption.31}\protected@file@percent }
-\newlabel{fig:approach_subsequent}{{2.16}{32}{Approach curves recorded on two different days. The second curve was recorded after retraction and subsequent approach. The 2 curves do not start at the same distance away from sample, therefore they are not aligned on the x-axis. Both are driven until full contact. Capacitance 3 exhibits noisy signal. The reason for this is unknown}{figure.caption.31}{}}
-\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.5}Reproducibility}{32}{subsection.2.3.5}\protected@file@percent }
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-\newlabel{fig:approach_replicability_cap_diff}{{2.17b}{33}{\relax }{figure.caption.33}{}}
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-\newlabel{fig:approach_replicability}{{2.17}{33}{\subref {fig:approach_replicability_cap} 3 subsequent approach curves. \subref {fig:approach_replicability_cap_diff} corresponding differences in capacitance. \textcolor {tab_green}{Green} is the initial curve. The \textcolor {tab_blue}{blue} curve is after sample has been carefully removed and reinserted. For the \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier}{figure.caption.33}{}}
-\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.6}Cross capacitances}{33}{subsection.2.3.6}\protected@file@percent }
-\newlabel{subsec:cross_cap}{{2.3.6}{33}{Cross capacitances}{subsection.2.3.6}{}}
-\newlabel{fig:cross_cap_approach_difference}{{2.18a}{34}{\relax }{figure.caption.34}{}}
-\newlabel{sub@fig:cross_cap_approach_difference}{{a}{34}{\relax }{figure.caption.34}{}}
-\newlabel{fig:cross_cap_approach_difference_2}{{2.18b}{34}{\relax }{figure.caption.34}{}}
-\newlabel{sub@fig:cross_cap_approach_difference_2}{{b}{34}{\relax }{figure.caption.34}{}}
-\newlabel{fig:cross_cap_approach_sim}{{2.18c}{34}{\relax }{figure.caption.34}{}}
-\newlabel{sub@fig:cross_cap_approach_sim}{{c}{34}{\relax }{figure.caption.34}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {2.18}{\ignorespaces (\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}) approach curves of two example measurements of 2 different masks normalized to ensure the same scale. (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of the approach with tilted sample.}}{34}{figure.caption.34}\protected@file@percent }
-\newlabel{fig:cross_cap_approach}{{2.18}{34}{(\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}) approach curves of two example measurements of 2 different masks normalized to ensure the same scale. (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of the approach with tilted sample}{figure.caption.34}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {2.19}{\ignorespaces Diagram showing a cross section of the mask at a gold pad location. A small tear in the \ce {SiO2} layer removes insulation between the gold wire and the Si of the mask. Parallel black lines depict plate capacitors illustratively. Larger plate shows larger capacitance. }}{35}{figure.caption.35}\protected@file@percent }
-\newlabel{fig:leakage_current}{{2.19}{35}{Diagram showing a cross section of the mask at a gold pad location. A small tear in the \ce {SiO2} layer removes insulation between the gold wire and the Si of the mask. Parallel black lines depict plate capacitors illustratively. Larger plate shows larger capacitance}{figure.caption.35}{}}
-\@writefile{lot}{\contentsline {table}{\numberline {2.1}{\ignorespaces Table of cross capacitance measurement results. All measurements were carried out with the mask shuttle the Mask Aligner and sample at $0.3$ mm distance. The distance was determined optically with Bresser MicroCam II and MikroCamLabII.}}{36}{table.caption.36}\protected@file@percent }
-\newlabel{tab:cross_cap}{{2.1}{36}{Table of cross capacitance measurement results. All measurements were carried out with the mask shuttle the Mask Aligner and sample at $0.3$ mm distance. The distance was determined optically with Bresser MicroCam II and MikroCamLabII}{table.caption.36}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {2.20}{\ignorespaces The 3 capacitance curves of the Mask labeled "old". Of note is the difference in scale of the capacitance signal.}}{37}{figure.caption.37}\protected@file@percent }
-\newlabel{fig:mask_old_caps}{{2.20}{37}{The 3 capacitance curves of the Mask labeled "old". Of note is the difference in scale of the capacitance signal}{figure.caption.37}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {2.21}{\ignorespaces The 3 capacitance curves of the Mask labeled "old" scaled to be within the same range. The lower plots show deviations from comparison curve. }}{37}{figure.caption.38}\protected@file@percent }
-\newlabel{fig:mask_old_correl}{{2.21}{37}{The 3 capacitance curves of the Mask labeled "old" scaled to be within the same range. The lower plots show deviations from comparison curve}{figure.caption.38}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {2.22}{\ignorespaces Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger.}}{38}{figure.caption.39}\protected@file@percent }
-\newlabel{fig:cross_cap_diagramm}{{2.22}{38}{Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger}{figure.caption.39}{}}
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-\newlabel{sec:sample_prep}{{2.4.1}{39}{Sample preparation}{subsection.2.4.1}{}}
+\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.5}Reproducibility}{31}{subsection.2.3.5}\protected@file@percent }
+\@writefile{toc}{\contentsline {subsubsection}{Reproducibility when removing sample/mask}{31}{section*.31}\protected@file@percent }
+\newlabel{fig:approach_replicability_cap}{{2.16a}{31}{\relax }{figure.caption.32}{}}
+\newlabel{sub@fig:approach_replicability_cap}{{a}{31}{\relax }{figure.caption.32}{}}
+\newlabel{fig:approach_replicability_cap_diff}{{2.16b}{31}{\relax }{figure.caption.32}{}}
+\newlabel{sub@fig:approach_replicability_cap_diff}{{b}{31}{\relax }{figure.caption.32}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {2.16}{\ignorespaces (\subref {fig:approach_replicability_cap}) 3 subsequent approach curves. (\subref {fig:approach_replicability_cap_diff}) corresponding differences in capacitance. \textcolor {tab_green}{Green} is the initial curve. The \textcolor {tab_blue}{blue} curve is after sample has been carefully removed and reinserted. For the \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier.}}{31}{figure.caption.32}\protected@file@percent }
+\newlabel{fig:approach_replicability}{{2.16}{31}{(\subref {fig:approach_replicability_cap}) 3 subsequent approach curves. (\subref {fig:approach_replicability_cap_diff}) corresponding differences in capacitance. \textcolor {tab_green}{Green} is the initial curve. The \textcolor {tab_blue}{blue} curve is after sample has been carefully removed and reinserted. For the \textcolor {tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor {tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier}{figure.caption.32}{}}
+\@writefile{toc}{\contentsline {subsection}{\numberline {2.3.6}Cross capacitances}{32}{subsection.2.3.6}\protected@file@percent }
+\newlabel{subsec:cross_cap}{{2.3.6}{32}{Cross capacitances}{subsection.2.3.6}{}}
+\newlabel{fig:cross_cap_approach_difference}{{2.17a}{33}{\relax }{figure.caption.33}{}}
+\newlabel{sub@fig:cross_cap_approach_difference}{{a}{33}{\relax }{figure.caption.33}{}}
+\newlabel{fig:cross_cap_approach_difference_2}{{2.17b}{33}{\relax }{figure.caption.33}{}}
+\newlabel{sub@fig:cross_cap_approach_difference_2}{{b}{33}{\relax }{figure.caption.33}{}}
+\newlabel{fig:cross_cap_approach_sim}{{2.17c}{33}{\relax }{figure.caption.33}{}}
+\newlabel{sub@fig:cross_cap_approach_sim}{{c}{33}{\relax }{figure.caption.33}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {2.17}{\ignorespaces (\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}) approach curves of two example measurements of 2 different masks normalized to ensure the same scale. (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of the approach with tilted sample.}}{33}{figure.caption.33}\protected@file@percent }
+\newlabel{fig:cross_cap_approach}{{2.17}{33}{(\subref {fig:cross_cap_approach_difference}, \subref {fig:cross_cap_approach_difference_2}) approach curves of two example measurements of 2 different masks normalized to ensure the same scale. (\subref {fig:cross_cap_approach_sim}) shows a simple simulation of the approach with tilted sample}{figure.caption.33}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {2.18}{\ignorespaces Diagram showing a cross section of the mask at a gold pad location. A small tear in the \ce {SiO2} layer removes insulation between the gold wire and the Si of the mask. Parallel black lines depict plate capacitors illustratively. Larger plate shows larger capacitance. }}{34}{figure.caption.34}\protected@file@percent }
+\newlabel{fig:leakage_current}{{2.18}{34}{Diagram showing a cross section of the mask at a gold pad location. A small tear in the \ce {SiO2} layer removes insulation between the gold wire and the Si of the mask. Parallel black lines depict plate capacitors illustratively. Larger plate shows larger capacitance}{figure.caption.34}{}}
+\@writefile{lot}{\contentsline {table}{\numberline {2.1}{\ignorespaces Table of cross capacitance measurement results. }}{35}{table.caption.35}\protected@file@percent }
+\newlabel{tab:cross_cap}{{2.1}{35}{Table of cross capacitance measurement results}{table.caption.35}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {2.19}{\ignorespaces The 3 capacitance curves of the Mask labeled "old" scaled to be within the same range. The lower plots show deviations from comparison curve. }}{36}{figure.caption.36}\protected@file@percent }
+\newlabel{fig:mask_old_correl}{{2.19}{36}{The 3 capacitance curves of the Mask labeled "old" scaled to be within the same range. The lower plots show deviations from comparison curve}{figure.caption.36}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {2.20}{\ignorespaces Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger.}}{37}{figure.caption.37}\protected@file@percent }
+\newlabel{fig:cross_cap_diagramm}{{2.20}{37}{Circuit diagram of the measurement setup with the cross capacitances and parasitic capacitances for the mask shuttle. The $C_i$ refer to the main capacitances that are used for mask alignment. $C_{ij}$ refers to a cross capacitance between capacitance sensor $i$ and sensor $j$. $C_{mask-sample}$ refers to the capacitance between the Si of the Mask and the Si of the Sample, usually this should not be measured since the Si of the Mask is separated from the gold pads with a SiN layer, but should that layer be pierced or otherwise allow a leakage current (if the resistances $R_{i, Leak}$ are small enough) this will be measured instead of $C_i$, since it is an order of magnitude larger}{figure.caption.37}{}}
+\@writefile{toc}{\contentsline {paragraph}{Leakage current}{37}{section*.38}\protected@file@percent }
+\@writefile{toc}{\contentsline {paragraph}{Improved gold pin fitting}{37}{section*.39}\protected@file@percent }
+\@writefile{tdo}{\contentsline {todo}{Image of gold pins}{37}{section*.40}\protected@file@percent }
+\@writefile{toc}{\contentsline {section}{\numberline {2.4}Mask Aligner operation}{38}{section.2.4}\protected@file@percent }
+\@writefile{toc}{\contentsline {subsection}{\numberline {2.4.1}Sample preparation}{38}{subsection.2.4.1}\protected@file@percent }
+\newlabel{sec:sample_prep}{{2.4.1}{38}{Sample preparation}{subsection.2.4.1}{}}
\@setckpt{chap02}{
-\setcounter{page}{41}
-\setcounter{equation}{4}
+\setcounter{page}{39}
+\setcounter{equation}{1}
\setcounter{enumi}{10}
\setcounter{enumii}{0}
\setcounter{enumiii}{0}
\setcounter{enumiv}{0}
-\setcounter{footnote}{0}
+\setcounter{footnote}{1}
\setcounter{mpfootnote}{0}
\setcounter{part}{0}
\setcounter{chapter}{2}
@@ -146,12 +136,12 @@
\setcounter{subsubsection}{0}
\setcounter{paragraph}{0}
\setcounter{subparagraph}{0}
-\setcounter{figure}{22}
+\setcounter{figure}{20}
\setcounter{table}{1}
\setcounter{section@level}{2}
\setcounter{Item}{10}
-\setcounter{Hfootnote}{0}
-\setcounter{bookmark@seq@number}{21}
+\setcounter{Hfootnote}{1}
+\setcounter{bookmark@seq@number}{20}
\setcounter{parentequation}{0}
\setcounter{FancyVerbLine}{0}
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diff --git a/chap02.tex b/chap02.tex
index a5d7ae17b6f8347508965d7219b642a9d010017f..e8d5f48d9614eb57f294f3a92d3d2b2ae6aab1b5 100644
--- a/chap02.tex
+++ b/chap02.tex
@@ -258,10 +258,13 @@ achievable optical accuracy.
\end{figure}
\newpage
-\subsection{Approach curves}
+\subsection{Capacitive distance measurements}
After optical alignment, the mask is further aligned to the sample via capacitive measurement. The 3
-capacitive sensors on the mask are setup in correspondence with the 3 motors of the Mask Aligner. They are labeled as seen in Figure \ref{fig:mask_aligner_nomenclature_capacitances_motors}. Note that this is not true for all masks. Some of the ones provided are assembled incorrectly. The mask consist of a $200$ $\mu$m thick \ce{Si} body. A $100\times100$ $\mu$m \ce{SiN} membrane, with circular $3$ $\mu$m diameter holes, $10$ $\mu$m apart from each other, is situated in the center. The \ce{SiN} covers the whole mask and is $1$ $\mu$m thick. Below the center of the mask a trench is carved in the \ce{Si}. Around the hole membrane are $3$ gold pads, that function as capacitive sensors. The \ce{Au} of the gold pads is placed below an insulating $\approx 100$ nm layer of \ce{SiO2} at the bottom of a trench in the \ce{Si} body. They are at a distance of $0.7$ mm from the hole membrane and are located in an equilateral triangle around it. The dimensions of the mask and the capacitive sensors on the mask can be seen in Figure \ref{fig:mask_aligner_nomenclature_capacitances_mask}.
+capacitive sensors on the mask are setup to correspond with the $3$ motors (Fig. \ref{fig:mask_aligner_nomenclature_capacitances_motors}). They are labeled as seen in Figure \ref{fig:mask_aligner_nomenclature_capacitances_motors}.
+\footnote{Note that this is not true for all masks. Some of the ones provided are assembled incorrectly.}
+The masks used were created in Canada by the company Norcada.
+Each mask consist of a $200$ $\mu$m thick \ce{Si} body. A $100\times100$ $\mu$m \ce{SiN} membrane, with circular $3$ $\mu$m diameter holes, $10$ $\mu$m apart from each other, is situated in the center. The \ce{SiN} covers the whole mask and is $1$ $\mu$m thick. Below the center of the mask a trench is carved in the \ce{Si}. Around the hole membrane are $3$ gold pads, that function as capacitive sensors. The \ce{Au} of the gold pads is placed below an insulating $\approx 100$ nm layer of \ce{SiO2} at the bottom of a trench in the \ce{Si} body. They are at a distance of $0.7$ mm from the hole membrane and are located in an equilateral triangle around it. The dimensions of the mask and the capacitive sensors on the mask can be seen in Figure \ref{fig:mask_aligner_nomenclature_capacitances_mask}.
\begin{figure}[H]
\centering
@@ -276,15 +279,15 @@ capacitive sensors on the mask are setup in correspondence with the 3 motors of
\label{fig:mask_aligner_nomenclature_capacitances_mask}
\end{subfigure}
\label{fig:mask_aligner_nomenclature_capacitances}
- \caption{(\subref{fig:mask_aligner_nomenclature_capacitances_motors}) shows a cross-section of the Mask Aligner showing the labeling and rough positioning of the capacitance sensors on the mask (inner \textcolor{tab_red}{red} triangle) in relation to the $3$ piezo motor stacks. (\subref{fig:mask_aligner_nomenclature_capacitances_mask}) shows a diagram of the mask's dimensions as well as labeling of the mask's sensors. The inset shows the dimensions of the holey part of the mask, which is used to create patterns.}
+ \caption{(\subref{fig:mask_aligner_nomenclature_capacitances_motors}) shows a cross-section of the Mask Aligner showing the labeling and rough positioning of the capacitance sensors on the mask (inner \textcolor{tab_red}{red} triangle) in relation to the $3$ piezo motor stacks. (\subref{fig:mask_aligner_nomenclature_capacitances_mask}) shows a diagram of the mask's dimensions as well as labeling of the mask's sensors. The inset shows the dimensions of the holey part of the mask, which is used to create patterns. Below is a cross section of the materials used.}
\end{figure}
-The readout of the capacitance sensors is carried out with a Lock-in amplifier. The piezo motors are controlled with pulses from the RHK piezo motor controller. Communication with both the RHK and the Lock-in amplifier is done with a Matlab script. The communication with the RHK is done via a network interface, while the Lock-in uses a serial interface. Figure \ref{fig:diagram_MA_circ} shows a diagram of the communication circuit. Settings of the Lock-in amplifier are available in Appendix \ref{app:lock_in}.
+The readout of the capacitance sensors is carried out with a Lock-in amplifier. The piezo motors are controlled with pulses from the RHK piezo motor controller. Communication with both the RHK and the Lock-in amplifier is done with a Matlab script. Figure \ref{fig:diagram_MA_circ} shows a diagram of the communication circuit. Settings of the Lock-in amplifier are available in Appendix \ref{app:lock_in}.
\begin{figure}[H]
\centering
\includegraphics[width=0.75\linewidth]{img/MA/SchaltDiagramRHK.pdf}
- \caption{Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ in order. The RHK relay controls, which motor is currently driven.}
+ \caption{Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ one after another. The RHK relay controls, which motor is currently driven.}
\label{fig:diagram_MA_circ}
\end{figure}
@@ -297,19 +300,19 @@ the capacitor:
\label{eq:plate_capacitor}
\end{equation}
where $C$ is the capacitance, $\epsilon_0$ is the vacuum permittivity, $\epsilon_r$ is the relative permittivity between the capacitor plates, $A$ is
-the area of overlap of the capacitor plates, which in this case corresponds to
the area of the gold pad and $r$ is the distance between the gold pad and the
\ce{Si} of the sample. $r$ is both the distance of $1$ $\mu$m of \ce{SiN} on the mask's surface and the mask sample distance in vacuum. \\
-If any of the gold pads move a distance $r'$ closer to the sample the
-capacitance increases by (disregarding \ce{SiN}):
-\begin{equation}
- C' = \epsilon_0 \epsilon_r \frac{A}{r + r'} \Rightarrow \frac{1}{C'} =
-\frac{1}{C} + \epsilon_0 \epsilon_r \frac{A}{r'}
-\end{equation}
- The $\epsilon_r$ value for \ce{SiN} is $6.06$ (for a thin film of $437$ nm)~\cite{SiN_dielectric}. The value of $\epsilon_r$ in UHV is $\approx 1$, since the system is at a pressure of at least $10^{-8}$ mbar.
The capacitance increases with a $\frac{1}{r}$ dependence. This holds true until
the mask's surface gets in contact with the sample. Contamination particles can also cause indirect contact of mask and sample.
+The distance to the
+sample can in theory be read off from the capacitance value via Eq.
+\ref{eq:plate_capacitor}. However, with real masks the capacitance values can
+deviate drastically from the model. Without any point of
+reference, no assessment of the absolute distance can be made.
+For this reason, a calibration curve is required to determine distances. This requires contacting the sample at
+least once. \\
+
\begin{figure}[H]
\centering
\begin{subfigure}{0.45\textwidth}
@@ -355,22 +358,8 @@ Usually the mask will start contacting the sample with one point (or potentially
this is shown in Figure \ref{fig:approach_curve_example_first}. This inhibits
the movement of the mask on the associated motor. This results in a changed
step size. Since all motors move the mask frame this will affect all motors step sizes, albeit to different degrees. Due to
-this step size change, the slope of the approach curve changes (Eq.
-\ref{eq:cap_slope_change}), as seen in Figure
-\ref{fig:approach_curve_example_cap} at the label "First contact".
-
-\begin{equation}
- C'' = \epsilon_0 \epsilon_r \frac{A}{r + r' * d} \Rightarrow \frac{1}{C'} =
-\frac{1}{C} + \underbrace{\epsilon_0 \epsilon_r \frac{1}{d}}_{\textit{slope}}
-\frac{A}{r'}
- \label{eq:cap_slope_change}
-\end{equation}
-
-Where $C''$ is the resulting capacitance, $r$ is the distance to first contact, $r'$ is the distance since first contact and $d$ is the parameter by which the step size changes.
-When approaching the surface further, the mask will contact the surface
-with an edge (see
-Figure \ref{fig:approach_curve_example_second}). This will have the same effect
-as before. This is labeled in Figure
+this step size change, the slope of the approach curve changes.
+If the sample is now contacted with an edge the step size decreases again. This is labeled in Figure
\ref{fig:approach_curve_example_cap} as "Second contact". If the sample is
approached further, the only axis of movement left for the mask is the one
aligning the mask to the sample perfectly (Figure
@@ -379,42 +368,34 @@ longer changes since the distance between mask and sample can no longer be
decreased. This point is labeled "Full contact" in Figure
\ref{fig:approach_curve_example_cap}. \\
-Another way of looking at this is to consider the differences between $2$ capacitance values:
-\begin{equation}
- C_2 - C_1 = \epsilon_0 \epsilon_r \frac{A}{r + r'} - \epsilon_0 \epsilon_r
-\frac{A}{r} < C_3 - C_2 = \epsilon_0 \epsilon_r \frac{A}{r + 2r'} - \epsilon_0
-\epsilon_r \frac{A}{r + r'}
-\end{equation}
-Where $C_1$, $C_2$ and $C_3$ are $3$ different capacitance values where $C_1 < C_2 < C_3$. They are $r'$ apart in distance.
-The values increase monotonically, when however the slope changes, the difference will suddenly drop (Figure \ref{fig:approach_curve_example_cap_diff}). When
-the peak value of this graph is known one can predict the contact before it happens and stop the approach before the sample is contacted. This peak value can be used to define a "stop condition". The stop condition has to be determined using a calibration approach. In practice the stop condition has to be chosen a few steps before the peak due to noise. \\
-
-The distance to the
-sample can be read off from the capacitance value via Eq.
-\ref{eq:plate_capacitor} in principle. However, with real masks the capacitance values can
-deviate drastically from the model. Without any point of
-reference, no assessment of the absolute distance can be made.
-For this reason, the approach curve of any mask sample combination has to be
-recorded first as a calibration curve. This requires contacting the sample at
-least once. Absolute distance can still not be measured since upon retraction and subsequent
-approach, the capacitance values drop as seen in Figure
-\ref{fig:approach_subsequent}. This is either due to accumulation of
+The difference in capacitance increases monotonically. When the step size changes the difference makes a sudden drop. This means the $dC$ curve gives a local maximum before each contact. This can be used to define a stop condition. A value near the peak is determined in a calibration measurement to full contact. When this value is reached in any subsequent approach the approach is stopped. How close the value can be chosen to the peak depends on the noise of the signal. \\
+%Another way of looking at this is to consider the differences between $2$ capacitance values:
+%\begin{equation}
+% C_2 - C_1 = \epsilon_0 \epsilon_r \frac{A}{r + r'} - \epsilon_0 \epsilon_r
+%\frac{A}{r} < C_3 - C_2 = \epsilon_0 \epsilon_r \frac{A}{r + 2r'} - \epsilon_0
+%\epsilon_r \frac{A}{r + r'}
+%\end{equation}
+%Where $C_1$, $C_2$ and $C_3$ are $3$ different capacitance values where $C_1 < C_2 < C_3$. They are $r'$ apart in distance.
+%The values increase monotonically, when however the slope changes, the difference will suddenly drop (Figure \ref{fig:approach_curve_example_cap_diff}). When
+%the peak value of this graph is known one can predict the contact before it happens and stop the approach before the sample is contacted. This peak value can be used to define a "stop condition". The stop condition has to be determined using a calibration approach. In practice the stop condition has to be chosen a few steps before the peak due to noise. \\
+
+Absolute distance can still not be measured since upon retraction and subsequent
+approach, the capacitance values drop. This is either due to accumulation of
misalignement from tilting and/or
-accumulation of particles on the sample/mask surface. \\
+accumulation of particles on the sample/mask surface.
In order to still get replicable alignment, the difference of
-capacitance is used. The stop condition is used to determine good alignment
-~\cite{Beeker}.
+capacitance is used.
+%The stop condition is used to determine good alignment~\cite{Beeker}.
-\begin{figure}[H]
- \centering
-
-\includegraphics[width=0.95\linewidth]{img/MA/SubsequentApproachDeviation.pdf}
- \caption{Approach curves recorded on two different days. The
-second curve was recorded after retraction and subsequent approach. The 2 curves
-do not start at the same distance away from sample, therefore they are not
-aligned on the x-axis. Both are driven until full contact. Capacitance 3 exhibits noisy signal. The reason for this is unknown.}
- \label{fig:approach_subsequent}
-\end{figure}
+%\begin{figure}[H]
+% \centering
+% \includegraphics[width=0.95\linewidth]{img/MA/SubsequentApproachDeviation.pdf}
+% \caption{Approach curves recorded on two subsequent days. The
+% second curve was recorded after retraction and subsequent approach. The 2 curves
+% do not start at the same distance away from sample, therefore they are not
+% aligned on the x-axis. Both are driven until full contact. Capacitance 3 shows noisy signal for unknown reasons.}
+% \label{fig:approach_subsequent}
+%\end{figure}
\subsection{Reproducibility}
Reproducibility of approach curves with regard to different samples and masks is important for the future use of the Mask Aligner. In the master thesis of Jonas Beeker the
@@ -437,11 +418,11 @@ One question concerning reproducibility is whether the approach curve is strongl
\caption{}
\label{fig:approach_replicability_cap_diff}
\end{subfigure}
- \caption{\subref{fig:approach_replicability_cap} 3 subsequent approach curves. \subref{fig:approach_replicability_cap_diff} corresponding differences in capacitance. \textcolor{tab_green}{Green} is the initial curve. The \textcolor{tab_blue}{blue} curve is after sample has been carefully removed and reinserted. For the \textcolor{tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor{tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier.}
+ \caption{(\subref{fig:approach_replicability_cap}) 3 subsequent approach curves. (\subref{fig:approach_replicability_cap_diff}) corresponding differences in capacitance. \textcolor{tab_green}{Green} is the initial curve. The \textcolor{tab_blue}{blue} curve is after sample has been carefully removed and reinserted. For the \textcolor{tab_red}{red} curve the mask was removed and reinserted. Larger fluctuations in the signal visible on the \textcolor{tab_blue}{Blue} curve are due to an accidental change in time constant of the LockIn Amplifier.}
\label{fig:approach_replicability}
\end{figure}
-The reproducibility when exchanging just the mask or sample and reinserting it is discussed in the following. When reinserting the mask, the approach curve changed drastically, which can likely be attributed to newly induced tilt on the mask. This can be seen in the shift between the \textcolor{tab_green}{green} and \textcolor{tab_red}{red} curves in Figure \ref{fig:approach_replicability}. The process of moving the mask out and back in to the mask frame might induce enough perturbation to the mask holder to move it slightly in the mask. This fault could potentially be fixed by better gold pin design, when designing newer mask discussed further in \ref{subsec:cross_cap}\\
+Reinserting the mask, the approach curve changed drastically, which can likely be attributed to newly induced tilt on the mask. This can be seen in the shift between the \textcolor{tab_green}{green} and \textcolor{tab_red}{red} curves in Figure \ref{fig:approach_replicability}. The process of moving the mask out and back in to the mask frame might induce enough perturbation to the mask holder to move it slightly in the mask. This fault could potentially be fixed by better gold pin design, when designing newer mask discussed further in \ref{subsec:cross_cap}\\
Another reason might be small movement of the mask frame on the \ce{Nd} magnets tilting the mask. This problem cannot be fixed without a complete redesign of the Mask Aligner. \\
@@ -478,12 +459,6 @@ since moving any of the motors affects all capacitance sensors. If the distances
\label{fig:cross_cap_approach}
\end{figure}
-The model in Figure \ref{fig:cross_cap_approach_sim} assumes a distance between the sensors on the z-axis of $440$ nm for C1-C2 and $220$ nm for C2-C3. A distance that is well within the optical accuracy of $\approx 5$ $\mu$m for maximum zoom and resolution. Even for such a small difference, the deviance between the curves, is easily visible. \\
-
-However, measured capacitances show a deviation in behavior from the model (Fig. \ref{fig:cross_cap_approach_difference}). The different capacitances vary by $1$-$2$ order of magnitude. The largest capacitance was measured to $19.12$ pF. The curves (Fig. \ref{fig:cross_cap_approach_difference}) start with large deviation and converge near full contact. This is the opposite to the expected behavior (Fig. \ref{fig:cross_cap_approach_sim}). The general shape of the curves is identical for all $3$, while it is expected that the first contact affects the $3$ capacitances differently. \\
-
-Another mask (Figure \ref{fig:cross_cap_approach_difference_2}) shows behavior more close to the expected, with a difference for the $3$ capacitances at first contact. However, $C_2$ and $C_3$ behave identically again. The largest capacitance was measured to be $19.78$ pF and $C_2$ and $C_3$ varied by $2$ orders of magnitude from $C_1$. \\
-
For the gold pads, this would result in a capacitance of $\approx 0.40$ fF, at a distance of $\approx 50$ micron (measured optically). The capacitance values of the curve $C_1$ was $\approx 2.4$
pF, which deviates by $4$ orders of magnitude. This corresponds more closely to the
value expected for capacitance from the \ce{Si} of the mask to the \ce{Si} of
@@ -492,6 +467,12 @@ the sample. The expected value for a plate capacitor would be $\approx
of the model. It does not take into account any stray capacitances the system
might have. \\
+The model in Figure \ref{fig:cross_cap_approach_sim} assumes a distance between the sensors on the z-axis of $440$ nm for C1-C2 and $220$ nm for C2-C3. A distance that is well within the optical accuracy of $\approx 5$ $\mu$m for maximum zoom and resolution. Even for such a small difference, the deviance between the curves, is easily visible. \\
+
+However, measured capacitances show a deviation in behavior from the model (Fig. \ref{fig:cross_cap_approach_difference}). The different capacitances vary by $1$-$2$ order of magnitude. The largest capacitance was measured to $19.12$ pF. The curves (Fig. \ref{fig:cross_cap_approach_difference}) start with large deviation and converge near full contact. This is the opposite to the expected behavior (Fig. \ref{fig:cross_cap_approach_sim}). The general shape of the curves is identical for all $3$, while it is expected that the first contact affects the $3$ capacitances differently. \\
+
+Another mask (Figure \ref{fig:cross_cap_approach_difference_2}) shows behavior more close to the expected, with a difference for the $3$ capacitances at first contact. However, $C_2$ and $C_3$ behave identically again. The largest capacitance was measured to be $19.78$ pF and $C_2$ and $C_3$ varied by $2$ orders of magnitude from $C_1$. \\
+
%\begin{figure}[H]
% \centering
% \includegraphics[width=0.9\linewidth]{img/SimilarityApproach.pdf}
@@ -537,27 +518,26 @@ Mask shuttle 3 & $0.23 \pm 0.02$ & $0.25 \pm 0.02$ & $0.049 \pm
Shuttles average & $0.26 \pm 0.03$ & $0.26 \pm 0.02$ & $0.043 \pm 0.004$
\\ \hline
\end{tabular}
-\caption{Table of cross capacitance measurement results. All measurements were carried out with the mask shuttle the
-Mask Aligner and sample at $0.3$ mm distance. The distance was determined optically with Bresser MicroCam II and MikroCamLabII.}
+\caption{Table of cross capacitance measurement results. }
\label{tab:cross_cap}
\end{table}
In order to quantify the effect of this source, cross capacitances were measured directly between $3$ masks holders inside mask shuttles, as well as
-3 empty shuttles. This was accomplished by replacing the connection from the Lock-in amplifier to the sample in Figure \ref{fig:diagram_MA_circ} with one to one of the capacitive sensors. Measurements were performed inside the Mask Aligner with a sample inserted. Additionally, mask shuttles without any mask inserted were tested for cross capacitance. The results are shown in Table \ref{tab:cross_cap} \\
+3 empty shuttles. For the measurement Input and output of the Lock-in were connected to two of the capacitance sensors of the mask. Measurements were performed inside the Mask Aligner with a sample inserted. Additionally, mask shuttles without any mask inserted were tested for cross capacitance. The results are shown in Table \ref{tab:cross_cap} \\
The shuttles themselves have large cross capacitance values. It is of the same order of magnitude as the capacitance expected from gold pad to sample. When adding the mask
-the cross capacitances increase, often by an order of magnitude. This shows that cross capacitance is an important in the correlation. \\
+the cross capacitances increase, often by an order of magnitude. \\
To check if this is also the dominant cause of correlation, the mask labeled "old" is looked at more closely. The cross capacitance values for this mask were small compared with the other masks (Table \ref{tab:cross_cap}). The approach curve of this mask however, shows the heaviest correlation of all masks tested. This indicates that in this case a leakage current from gold to mask \ce{Si} is the main cause. \\
To confirm the similarity between the different capacitance sensors signals, the data of each was overlaid over one another. The data was normalized to allow for comparison. Then an offset was fitted. The result of this can be seen in Figure \ref{fig:mask_old_correl}. The $3$ different capacitance sensors give the same signal. Systematic deviations in the residuals are only visible near the jump in capacitance signal, which is of unknown cause. The deviations are within $0.1$~\%, which is on the same order as the expected measurement error for the given LockIn parameters.
-\begin{figure}[H]
- \centering
- \includegraphics[width=0.9\linewidth]{img/Plots/Mask_Old_Caps.pdf}
- \caption{The 3 capacitance curves of the Mask labeled "old". Of note is the difference in scale of the capacitance signal.}
- \label{fig:mask_old_caps}
-\end{figure}
+%\begin{figure}[H]
+% \centering
+% \includegraphics[width=0.9\linewidth]{img/Plots/Mask_Old_Caps.pdf}
+% \caption{The 3 capacitance curves of the Mask labeled "old". Of note is the difference in scale of the capacitance signal.}
+% \label{fig:mask_old_caps}
+%\end{figure}
\begin{figure}[H]
\centering
@@ -609,23 +589,23 @@ Instead, they should be machined with precision by a workshop. The stability of
The cross capacitances of the mask holders should also be reduced. No proposal is made in this thesis about how to accomplish this, because the cause is undetermined. The other $2$ factors play a larger role and should be improved first.
-\subsection{Stop Conditions}
-During recording of a calibration approach curve two different scenarios can arise:
-
-\paragraph{High correlation between capacitance curves}
-When all 3 capacitance curves are heavily correlated, no alignment information
-can be derived from the 3 different curves. Effectively only one curve is measured. The stop condition in this case is a single peak in the derivative of that one
-capacitance curve. By picking a condition close to the peak good alignment can be achieved.
-
-By performing one approach until full contact between mask and sample the mask can be aligned
-at the cost of possibly damaging mask and sample. This has to be done on the first curve.
-Furthermore, the values of capacitance at full contact will afterward be known. They can upon further alignment be used to iteratively tweak the motors until a similar same value is reached again. With this method small tilting can be compensated. \\
-
-\paragraph{Low correlation between capacitance curves}
-When all 3 capacitance curves are mostly uncorrelated, information of the mask sample can be gathered directly from the value of each
-curve. In this case the absolute value of the $3$ capacitance curves can be used to determine when to stop the approach. Optimal values can be iteratively reached, by moving the $3$ motors separately. \\
-This is the easier and safer of the two scenarios, but it requires a good mask
-holder and mask stage.
+%\subsection{Stop Conditions}
+%During recording of a calibration approach curve two different scenarios can arise:
+%
+%\paragraph{High correlation between capacitance curves}
+%When all 3 capacitance curves are heavily correlated, no alignment information
+%can be derived from the 3 different curves. Effectively only one curve is measured. The stop condition in this case is a single peak in the derivative of that one
+%capacitance curve. By picking a condition close to the peak good alignment can be achieved.
+%
+%By performing one approach until full contact between mask and sample the mask can be aligned
+%at the cost of possibly damaging mask and sample. This has to be done on the first curve.
+%Furthermore, the values of capacitance at full contact will afterward be known. They can upon further alignment be used to iteratively tweak the motors until a similar same value is reached again. With this method small tilting can be compensated. \\
+%
+%\paragraph{Low correlation between capacitance curves}
+%When all 3 capacitance curves are mostly uncorrelated, information of the mask sample can be gathered directly from the value of each
+%curve. In this case the absolute value of the $3$ capacitance curves can be used to determine when to stop the approach. Optimal values can be iteratively reached, by moving the $3$ motors separately. \\
+%This is the easier and safer of the two scenarios, but it requires a good mask
+%holder and mask stage.
\section{Mask Aligner operation}
@@ -633,8 +613,8 @@ holder and mask stage.
The evaporation of a superconductor onto any material requires a clean sample surface. In this thesis, only \ce{Si} samples were used. To clean a \ce{Si} sample, the following steps have to be taken:
\begin{enumerate}
- \item Select chips from a \ce{Si} wafer and place them into a petri dish. The
-petri dish should be cleaned using acetone and then IPA in an ultrasonic bath.
+ \item Select chips from a \ce{Si} wafer and place them into a petri dish. Clean the preti dish
+using acetone and then IPA in an ultrasonic bath.
\item Carefully grab a silicon chip with a soft tip tweezer and while
maintaining stable grip, carefully blow any coarse particles from the surface of the
chip using pressurized nitrogen. Do not blow the nitrogen at the surface, but
@@ -645,9 +625,9 @@ bath for 10 minutes, ensuring however that $55^\circ$ C are never exceeded.
\item Take the chips out of the acetone with a soft tip tweezer and rinse them with IPA. Then submerge them in a beaker filled with IPA and clean them again in the ultrasonic bath for 10 minutes. No heating required.
\item Take the chip out again and repeat the last step with demineralized water. While waiting, combine the hardener and resin of the 2 part epoxy EPO-TEK E4110-LV to ensure it is ready for a later step.
\item Take the chip out and blow it dry with pressurized nitrogen, following the same procedure as step 2.
- \item Place 4 dots of mixed epoxy EPO-TEK E4110-LV into the grooves of the sample holder at the edges. Carefully grab the chip and place it from the top as straight as possible onto the sample holder. If necessary, gently nudge the chip from the sides that stick out to ensure it is sitting straight in the sample holder. Avoid contaminating the surface with epoxy resin!
+ \item Place 4 dots of mixed epoxy EPO-TEK E4110-LV into the grooves of the sample holder at the edges. Carefully grab the chip and place it from the top as straight as possible onto the sample holder.
\item Carefully place the sample holder in an oven heated to $150^\circ$ C and let the resin cure for $15$ minutes.
\item Document the sample's surface cleanliness using an optical microscope image and an AFM image
\item Place the sample as quickly as possible in the Mask Aligner Load Lock and pump the system down to avoid further contamination.
\end{enumerate}
-If the sample is intended to be analyzed in an STM, the sample preparation should happen in an UHV environment to ensure further cleanliness and the sample should be transported directly via the Load Lock UHV suitcase attached to the Mask Aligner Chamber.
\ No newline at end of file
+%If the sample is intended to be analyzed in an STM, the sample preparation should happen in an UHV environment to ensure further cleanliness and the sample should be transported directly via the Load Lock UHV suitcase attached to the Mask Aligner Chamber.
\ No newline at end of file
diff --git a/chap03.aux b/chap03.aux
index 5e517c07ba1642db636f3db5e093749846454e5b..f44240800214395da169a2b78aa1a22806b35578 100644
--- a/chap03.aux
+++ b/chap03.aux
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\citation{arduino_datasheet}
\citation{arduino_cpu_datasheet}
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diff --git a/chap04.aux b/chap04.aux
index 546c2fc5edf37cad4f00456ca3839ddf7e8cc5d2..fd18b78dce3d8e163b967c79a895ac8ed4442e8e 100644
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diff --git a/chap05.aux b/chap05.aux
index cb57298c5756013e8dff88ad7a1b70dbc9fd1789..b072c57724b175573604db58c6485b1b483b6488 100644
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-\@writefile{lof}{\contentsline {figure}{\numberline {5.14}{\ignorespaces Simulated evaporation dots without (\subref {fig:evaporation_simulation_rejection_prev}) and with (\subref {fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. (\subref {fig:evaporation_simulation_rejection_comparison}) shows the AFM image from which the parameters were obtained. The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}.}}{79}{figure.caption.93}\protected@file@percent }
-\newlabel{fig:evaporation_simulation_rejection}{{5.14}{79}{Simulated evaporation dots without (\subref {fig:evaporation_simulation_rejection_prev}) and with (\subref {fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. (\subref {fig:evaporation_simulation_rejection_comparison}) shows the AFM image from which the parameters were obtained. The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}}{figure.caption.93}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {5.15}{\ignorespaces Image of final simulation with parameters given in Figure \ref {fig:evaporation_simulation_first_compare} and an anharmonic oscillation with a power of $20$. The image is very grainy due to a low amount of rays cast.}}{80}{figure.caption.94}\protected@file@percent }
-\newlabel{fig:evaporation_simulation_progression}{{5.15}{80}{Image of final simulation with parameters given in Figure \ref {fig:evaporation_simulation_first_compare} and an anharmonic oscillation with a power of $20$. The image is very grainy due to a low amount of rays cast}{figure.caption.94}{}}
-\@writefile{toc}{\contentsline {subsection}{\numberline {5.5.3}Software improvements}{80}{subsection.5.5.3}\protected@file@percent }
-\@writefile{toc}{\contentsline {subsection}{\numberline {5.5.4}Final Remark}{81}{subsection.5.5.4}\protected@file@percent }
+\@writefile{lof}{\contentsline {figure}{\numberline {5.11}{\ignorespaces Simulation showing the effect of only x-y vibration on the resulting evaporation. White circles show the extreme positions of the circular mask. }}{75}{figure.caption.89}\protected@file@percent }
+\newlabel{fig:evaporation_simulation_overlap}{{5.11}{75}{Simulation showing the effect of only x-y vibration on the resulting evaporation. White circles show the extreme positions of the circular mask}{figure.caption.89}{}}
+\newlabel{fig:evaporation_simulation_sharpness_stick_simple}{{5.12a}{76}{\relax }{figure.caption.90}{}}
+\newlabel{sub@fig:evaporation_simulation_sharpness_stick_simple}{{a}{76}{\relax }{figure.caption.90}{}}
+\newlabel{fig:evaporation_simulation_sharpness_stick_initial}{{5.12b}{76}{\relax }{figure.caption.90}{}}
+\newlabel{sub@fig:evaporation_simulation_sharpness_stick_initial}{{b}{76}{\relax }{figure.caption.90}{}}
+\newlabel{fig:evaporation_simulation_sharpness_stick_power}{{5.12c}{76}{\relax }{figure.caption.90}{}}
+\newlabel{sub@fig:evaporation_simulation_sharpness_stick_power}{{c}{76}{\relax }{figure.caption.90}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {5.12}{\ignorespaces (\subref {fig:evaporation_simulation_sharpness_stick_simple}) Comparison of the evaporation with harmonic oscillation. (\subref {fig:evaporation_simulation_sharpness_stick_initial}) initial phase with no elliptical oscillation and then drift to the elliptical shape. (\subref {fig:evaporation_simulation_sharpness_stick_power})an anharmonic oscillation with $\sin (\frac {t}{T} + \phi )^{20}$ . The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}.}}{76}{figure.caption.90}\protected@file@percent }
+\newlabel{fig:evaporation_simulation_sharpness}{{5.12}{76}{(\subref {fig:evaporation_simulation_sharpness_stick_simple}) Comparison of the evaporation with harmonic oscillation. (\subref {fig:evaporation_simulation_sharpness_stick_initial}) initial phase with no elliptical oscillation and then drift to the elliptical shape. (\subref {fig:evaporation_simulation_sharpness_stick_power})an anharmonic oscillation with $\sin (\frac {t}{T} + \phi )^{20}$ . The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}}{figure.caption.90}{}}
+\newlabel{fig:evaporation_simulation_rejection_prev}{{5.13a}{77}{\relax }{figure.caption.91}{}}
+\newlabel{sub@fig:evaporation_simulation_rejection_prev}{{a}{77}{\relax }{figure.caption.91}{}}
+\newlabel{fig:evaporation_simulation_rejection_after}{{5.13b}{77}{\relax }{figure.caption.91}{}}
+\newlabel{sub@fig:evaporation_simulation_rejection_after}{{b}{77}{\relax }{figure.caption.91}{}}
+\newlabel{fig:evaporation_simulation_rejection_comparison}{{5.13c}{77}{\relax }{figure.caption.91}{}}
+\newlabel{sub@fig:evaporation_simulation_rejection_comparison}{{c}{77}{\relax }{figure.caption.91}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {5.13}{\ignorespaces (\subref {fig:evaporation_simulation_rejection_prev}) simulated evaporation dots without rejection. (\subref {fig:evaporation_simulation_rejection_prev}) with (\subref {fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. (\subref {fig:evaporation_simulation_rejection_comparison}) the AFM image from which the parameters were obtained. The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}.}}{77}{figure.caption.91}\protected@file@percent }
+\newlabel{fig:evaporation_simulation_rejection}{{5.13}{77}{(\subref {fig:evaporation_simulation_rejection_prev}) simulated evaporation dots without rejection. (\subref {fig:evaporation_simulation_rejection_prev}) with (\subref {fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. (\subref {fig:evaporation_simulation_rejection_comparison}) the AFM image from which the parameters were obtained. The parameters of the ellipse are the same as in Figure \ref {fig:evaporation_simulation_first_compare}}{figure.caption.91}{}}
+\@writefile{toc}{\contentsline {subsection}{\numberline {5.5.3}Software improvements}{77}{subsection.5.5.3}\protected@file@percent }
+\@writefile{toc}{\contentsline {subsection}{\numberline {5.5.4}Final Remark}{78}{subsection.5.5.4}\protected@file@percent }
\@setckpt{chap05}{
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diff --git a/chap05.tex b/chap05.tex
index e84de6d9c388deb626acaa655b205a8e931fd89e..bd1881d9b5f6bd57619237dea3a103e8a6bd4ebf 100644
--- a/chap05.tex
+++ b/chap05.tex
@@ -7,10 +7,12 @@ As a test for positioning and to optimize the penumbra of \ce{Pb} islands on a \
\begin{figure}[H]
\centering
\includegraphics[width=\linewidth]{img/Evaporation/Approach_Curve_Field01.pdf}
- \caption{The approach curve measured for field 1 until full contact. Since the 3 capacitance sensors appear correlated and the uncertainty on C2 and C3 is an order of magnitude larger than the difference, C1 was used for alignment primarily.}
+ \caption{The approach curve measured for field 1 until full contact.}
\label{fig:evaporation_approach_curve}
\end{figure}
+The 3 capacitance sensors appear heavily correlated (Fig. \ref{fig:evaporation_approach_curve}) and the uncertainty on C2 and C3 is an order of magnitude larger than the step in $dC$. For this reason C1 was primarily used for alignment. C2 and C3 were recorded but went unused.
+
Five subsequent evaporations were performed at different lateral positions on the sample. Each evaporation consists of a field of $9 \times 9$ $3$ $\mu$m \ce{Pb} circles, as seen previously in Figure \ref{fig:mask_aligner_nomenclature_capacitances_mask}. Each field was evaporated at different mask sample distances, as described by the approach curve. The approach curve to full contact of this particular sample is shown in Figure \ref{fig:evaporation_approach_curve} for field 1.\\
\begin{itemize}
@@ -36,15 +38,15 @@ The evaporation parameters are shown in Table \ref{tab:evaporation_settings}.
\caption{Table with all the evaporation parameters. FIL stands for the current applied to the heating Filament, EMIS stands for the emission current, FLUX is the measured molecular flux. Press is the maximum pressure in the chamber during the evaporation, and T is the maximal temperature the crucible reached during the evaporation. The voltage was changed to ensure FLUX was in the desired range between $450-520$}
\label{tab:evaporation_settings}
\end{table}
+%
+%\begin{figure}[H]
+% \centering
+% \includegraphics[width=0.8\linewidth]{img/Evaporation/MaskAlignerChamber_evap.pdf}
+% \caption{The Mask Aligner chamber configuration during evaporation.}
+% \label{fig:evaporation_chamber_status}
+%\end{figure}
-\begin{figure}[H]
- \centering
- \includegraphics[width=0.8\linewidth]{img/Evaporation/MaskAlignerChamber_evap.pdf}
- \caption{The Mask Aligner chamber configuration during evaporation.}
- \label{fig:evaporation_chamber_status}
-\end{figure}
-
-Figure \ref{fig:evaporation_chamber_status} shows the vacuum chamber status when the evaporation was performed. The turbomolecular pump was not turned off.
+The turbomolecular pump was by mistake not turned off during evaporation.
The pressure of the main chamber before each of the evaporations was $4.5 \times 10^{-10}$ mbar. The pressure during each evaporation was recorded, except for evaporation 4, where the software crashed during saving, corrupting the file. In this case, only the highest pressure value was recorded.
@@ -63,7 +65,7 @@ The pressure of the main chamber before each of the evaporations was $4.5 \times
\label{fig:Evaporation_diagramm_mask_img}
\end{subfigure}
- \caption{Diagram showing the Evaporation performed on the sample (\subref{fig:Evaporation_diagramm_sample_img}). Red squares represent the positions of the evaporated fields. The number shows the order of evaporations. Distances are measured using an optical microscope. Fields are at a $10^\circ$ angle with respect to the sample holder. (\subref{fig:Evaporation_diagramm_mask_img}) shows a microscope image of the mask taken before evaporation. The mask holder is placed straight in the microscope. The mask itself is angled on the mask holder.}
+ \caption{(\subref{fig:Evaporation_diagramm_sample_img}) diagram showing the Evaporation performed on the sample. Red squares represent the positions of the evaporated fields. The number shows the order of evaporations. Distances are measured using an optical microscope. Fields are at a $10^\circ$ angle with respect to the sample holder. (\subref{fig:Evaporation_diagramm_mask_img}) microscope image of the mask taken before evaporation. The mask holder is placed straight in the microscope. The mask itself is angled on the mask holder.}
\label{fig:Evaporation_diagramm}
\end{figure}
@@ -86,14 +88,14 @@ The entire sample's surface is contaminated with small particles, which are abou
\caption{}
\label{fig:evaporation_contamination_anal}
\end{subfigure}
- \caption{(\subref{fig:evaporation_contamination_img}) shows an AFM image of field $3$ without any grain removal applied. Data was obtained on multiple different spots on the sample. (\subref{fig:evaporation_contamination_anal}) shows line cuts obtained from contamination particles. \textcolor{tab_red}{Red} and \textcolor{tab_green}{green} lines show the average height and width of the contamination particles obtained from peak fits.}
+ \caption{(\subref{fig:evaporation_contamination_img}) AFM image of field $3$ without any grain removal applied. Data was obtained on multiple different spots on the sample. (\subref{fig:evaporation_contamination_anal}) line cuts obtained from contamination particles. \textcolor{tab_red}{Red} and \textcolor{tab_green}{green} lines show the average height and width of the contamination particles obtained from peak fits.}
\label{fig:evaporation_contamination}
\end{figure}
-The data in Figure \ref{fig:evaporation_contamination} shows that the particles are up to $\approx 40$ nm in height and with an average height of $24 \pm 10$ nm. The particle's average width is $40 \pm 10$. Height and width were obtained by fitting flattened Gaussian functions to the particles line cuts and extracting $2\sigma$ as well as the height of the peak. The distribution of particles across the sample surface appears approximately isotropic.
+The data in Figure \ref{fig:evaporation_contamination} shows that the particles are up to $\approx 40$ nm in height and with an average height of $24 \pm 10$ nm. The particle's average width is $40 \pm 10$. Height and width were obtained by fitting flattened Gaussian functions to the particles line cuts and extracting $2\sigma$ as well as the height of the peak. The distribution of particles across the sample surface is isotropic.
-In addition, the sample was contaminated with larger particles possibly from long exposure at atmospheric conditions as well as being inside the Mask Aligner Chamber during vacuum bakeout, where the system was heated to $>100$°C on $2$ separate occasions. The size of these larger particles was determined to be in the order of $\mathcal{O}(100 \text{nm})$ using SEM and on the order of $\mathit{O}(10)$ $\mu$m in diameter. \\
-Since the sample was checked only optically before insertion into UHV the small particle contamination might have been overlooked. Therefore, to check the for contamination of the sample with an AFM measurement, before it is inserted into UHV.
+In addition, the sample was contaminated with larger particles possibly from long exposure at atmospheric conditions as well as being inside the Mask Aligner Chamber during vacuum bakeout, where the system was heated to $>100$°C for several days on $2$ separate occasions. The size of these larger particles was determined to be in the order of $\mathcal{O}(100 \text{nm})$ using SEM and on the order of $\mathit{O}(10)$ $\mu$m in diameter. \\
+Since the sample was checked only optically before insertion into UHV the small particle contamination might have been overlooked. Therefore the sample should be checked for contaminations via AFM before insertion into the chamber.
\section{Penumbra}
@@ -112,7 +114,7 @@ In AFM measurements it becomes clear, that the dots are not entirely circular (F
\label{fig:Evaporation_diagramm_field}
\end{subfigure}
- \caption{AFM image of evaporated \ce{Pb} dot (\subref{fig:penumbra_tilt_sigmas}) illustrating the penumbral widths used for evaporation analysis $\sigma_s$ and $\sigma_l$, depicted in \textcolor{tab_red}{red}, and the major axis of the tilt \textcolor{tab_green}{(green)}. $\sigma_s$ is drawn larger than actually measured, to aid visibility. The \textcolor{tab_blue}{blue} lines are the major $a$ and minor $b$ axis of the ellipse formed on the evaporated dot. Inset shows the same image in the phase data. The data is from Evaporation 5. (\subref{fig:Evaporation_diagramm_field}) shows an AFM image of the top right part of field $3$. Grains were reduced using post-processing. Black circles show the dots chosen for further examination on this particular field.}
+ \caption{(\subref{fig:penumbra_tilt_sigmas}) AFM image of evaporated \ce{Pb} dot illustrating the penumbral widths used for evaporation analysis $\sigma_s$ and $\sigma_l$, depicted in \textcolor{tab_red}{red}, and the major axis of the tilt \textcolor{tab_green}{(green)}. $\sigma_s$ is drawn larger than actually measured, to aid visibility. The \textcolor{tab_blue}{blue} lines are the major $a$ and minor $b$ axis of the ellipse formed on the evaporated dot. Inset shows the same image in the phase data. The data is from Evaporation 5. (\subref{fig:Evaporation_diagramm_field}) AFM image of the top right part of field $3$. Grains were reduced using post-processing. Black circles show the dots chosen for further examination on this particular field.}
\label{fig:penumbra_tilt_sigmas_and_field_show}
\end{figure}
@@ -150,7 +152,7 @@ An example is shown in Figure \ref{fig:evaporation_analysis}. In the example, th
\includegraphics[width=0.95\linewidth]{img/Evaporation/TopField5Fit.pdf}
\caption{}
\end{subfigure}
- \caption{Example of the analysis conducted on each of the recorded dots for a single line cut. (a) shows the raw AFM data before cleaning with a large amount of very bright contaminant particles. (b) shows the cleaned image, as well as the line cut \textcolor{tab_green}{(green)} from which the line cut data (\textcolor{tab_blue}{(blue)}) in (c) was obtained. The black lines in (b) show how multiple line cuts were obtained on a single image to obtain values for $\sigma_s$ and $\sigma_l$. The fit parameters are the two different penumbra widths induced by the tilt $\sigma_s$ and $\sigma_l$ for a single line cut.}
+ \caption{Example of the analysis conducted on each of the recorded dots for a single line cut. (a) raw AFM data before cleaning with a large amount of very bright contaminant particles. (b) cleaned image. The black lines in (b) show how multiple line cuts were obtained on a single image to obtain values for $\sigma_s$ and $\sigma_l$. The fit parameters are the two different penumbra widths induced by the tilt $\sigma_s$ and $\sigma_l$ for a single line cut. (c) line cut data from one line as an example. This line cut was obtained from \textcolor{tab_green}{(green)} line in (b). }
\label{fig:evaporation_analysis}
\end{figure}
@@ -178,7 +180,7 @@ This process was performed for every recorded dot and with multiple line cuts ne
\caption{}
\label{fig:evaporation_measured_penumbra_circle_r}
\end{subfigure}
- \caption{Data obtained from the previously described method for each of the 5 evaporations, one dot each from the center, the left, the right, the bottom and the top. (\subref{fig:evaporation_measured_penumbra_sigs}) shows the smaller penumbra $\sigma_s$ (\subref{fig:evaporation_measured_penumbra_sigl}) the larger penumbra $\sigma_l$, (\subref{fig:evaporation_measured_penumbra_height}) the height of the dot and (\subref{fig:evaporation_measured_penumbra_circle_r}) the diameter of the circle .}
+ \caption{Data obtained from the previously described method for each of the 5 evaporations, one dot each from the center, the left, the right, the bottom and the top. (\subref{fig:evaporation_measured_penumbra_sigs})smaller penumbra $\sigma_s$. (\subref{fig:evaporation_measured_penumbra_sigl}) larger penumbra $\sigma_l$. (\subref{fig:evaporation_measured_penumbra_height}) height of the dot. (\subref{fig:evaporation_measured_penumbra_circle_r}) diameter of the circle.}
\label{fig:evaporation_measured_penumbra}
\end{figure}
Figure \ref{fig:evaporation_measured_penumbra} shows the values obtained from analysis of \ce{Pb} dots of each field.
@@ -228,12 +230,12 @@ The smallest minor axis found in the AFM data was $2.15 \pm 0.08$ $\mu$m compare
\caption{}
\label{fig:evaporation_SEM_mask}
\end{subfigure}
- \caption{SEM images of field 2 on the sample (\subref{fig:evaporation_SEM_sample}) and the mask (\subref{fig:evaporation_SEM_mask}) the inset shows another image of the same mask. The image of the mask was very unstable due to heavy charging effects.}
+ \caption{(\subref{fig:evaporation_SEM_sample}) SEM images of field 2 on the sample. (\subref{fig:evaporation_SEM_mask}) SEM image of the mask. The inset shows another image of the same mask. The image of the mask was very unstable due to heavy charging effects.}
\label{fig:evaporation_SEM}
\end{figure}
To check whether the Mask was undamaged during the evaporation, SEM images were taken of the mask as well as the sample. The resulting images can be seen in Figure \ref{fig:evaporation_SEM}. The evaporation of field $2$ shown in Figure \ref{fig:evaporation_SEM_sample} shows the elliptical tilt also visible in the AFM images. The elliptical part of the dot shows different value in the SEM image, which is an indicator, that the conductivity is different for that part of the dot. \\
-The image of the mask (Figure \ref{fig:evaporation_SEM_mask}) shows no damage to the mask. The white areas are charging artifacts and were not stable in multiple images. The mask looks to be bending, but this is most likely due to charging artifacts and an inherent fish-eye effect of SEM images at high magnification. Furthermore, some clogging from the underside of the mask is visible in the SEM images in Figure \ref{fig:evaporation_SEM_mask}.
+The image of the mask (Figure \ref{fig:evaporation_SEM_mask}) shows no damage to the mask. The white areas are charging artifacts and were not stable in multiple images. The mask appears to be bending. This is not a real deformation, but the result of charging artifacts and an inherent fish-eye effect of SEM images at high magnification.
\begin{figure}[H]
\centering
@@ -249,14 +251,14 @@ The image of the mask (Figure \ref{fig:evaporation_SEM_mask}) shows no damage to
\caption{}
\label{fig:evaporation_SEM_analysis_clog_overlay}
\end{subfigure}
- \caption{An example of the clogging noticed on $4$ of the mask holes (\subref{fig:evaporation_SEM_analysis_clog}) and the tilt direction from \ref{fig:evaporation_tilts} overlayed over the SEM image of the mask after it was rotated to match the fields.}
+ \caption{(\subref{fig:evaporation_SEM_analysis_clog}) example of the clogging noticed on $4$ of the mask holes. \subref{fig:evaporation_SEM_analysis_clog_overlay} tilt direction from \ref{fig:evaporation_tilts} overlayed over the SEM image of the mask after it was rotated to match the fields.}
\label{fig:evaporation_SEM_analysis}
\end{figure}
An example of this clogging in the SEM image is shown in Figure \ref{fig:evaporation_SEM_analysis_clog}
To further check if the clogging artifacts correspond to the directions of tilt shown in Figure \ref{fig:evaporation_tilts} the directions are overlayed in Figure \ref{fig:evaporation_SEM_analysis_clog_overlay}. The directions correspond to the direction shown in the SEM image, except for some outliers. It also points outwards. For a lot of points the clogging is not clearly visible in the image however, so that no strong conclusion can be drawn from the SEM image alone. \\
-This data suggests multiple possible hypothesis for this elliptical pattern. It could be that the mask deformed during evaporation or is permanently deformed. Additionally, a displacement of the mask due to vibration could cause elliptical artifacts.
+This data suggests multiple possible hypothesis for this elliptical dot shape. It could be that the mask deformed during evaporation or is permanently deformed. Additionally, a displacement of the mask due to vibration could cause elliptical artifacts.
\section{Simulation} \label{sec:simulation}
@@ -299,7 +301,7 @@ After a user specified time has passed, the amount of hits on each pixel is save
An image of a simple simulation for an oscillating mask dot with parameters obtained from the AFM measurement can be seen in Figure \ref{fig:evaporation_simulation_first_compare_SIM}. The parameters for the amplitude of the oscillation were extracted from the AFM image shown in Figure \ref{fig:evaporation_simulation_first_compare_AFM}. Vibrations were assumed to be harmonic during the deposition and different sticking factors of \ce{Pb}-\ce{Si} and \ce{Pb}-\ce{Pb} were not considered. The oscillation was modeled with a displacement of $0.143$ $\mu$m in x and $-0.358$ $\mu$m in z direction and a tilt of $-41.12^\circ$ in $\alpha$, $10^\circ$ in $\beta$ and $31^\circ$ in $\gamma$. \\
-A local deformation of nearly $45^\circ$ at a single hole site would lead to large strain on the mask. The visible tilt is most likely an outcome of both an x-y displacement and a bending of the mask. If there would be caused by vibrations only, the mask would shift between 2 lateral positions with a certain frequency. The $2$ extreme positions would have overlap, which is elliptical. If there is now an additional displacement component in the z direction, a smaller circle on top of the flat mask position would form. It is likely that the effect on the edge is an overlap of both a bending of the mask giving the mask some angle and an additional contribution from the displacement in both x-y and z direction. A simulation of this is shown in Figure \ref{fig:evaporation_simulation_overlap}
+A local deformation of nearly $45^\circ$ at a single hole site would lead to large strain on the mask. The visible tilt is most likely an outcome of both an x-y displacement and a bending of the mask. If it would have been caused by vibrations only, the mask would oscillate between 2 positions. The $2$ extreme positions would have overlap, which is elliptical. If there is now an additional displacement component in the z direction, a smaller circle on top of the flat mask position would form. It is likely that the effect on the edge is an overlap of both a bending of the mask giving the mask some angle and an additional contribution from the displacement in both x-y and z direction. A simulation of this is shown in Figure \ref{fig:evaporation_simulation_overlap}.
\begin{figure}[H]
\centering
@@ -308,7 +310,7 @@ A local deformation of nearly $45^\circ$ at a single hole site would lead to lar
\label{fig:evaporation_simulation_overlap}
\end{figure}
-The amplitude of displacement in the example in Figure \ref{fig:evaporation_simulation_first_compare_SIM} is $\approx 0.4$ $\mu$m, this is in line with the peak to peak amplitude of an active turbomolecular pump given by $1$ $\mu$m, obtained in the PhD thesis of Priyamvada Bhaskar~\cite{Bhaskar}. Some features of the AFM measurement are mirrored in the simulation, however it does not match the simulated image in a number of characteristics. For example the elliptical penumbra (\textcolor{tab_red}{red} in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) is very rough in the AFM image, but on average of equal height, while in the simulation the penumbra gradually lowers. Furthermore, the lower edge of the elliptical shape visible in the AFM dot below the circle (\textcolor{tab_cyan}{cyan} in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) is so faint as to be invisible in the AFM image, while it is very pronounced in the simulated image. The lower edge is sharp in the AFM image $61 \pm 9$ nm while it is smeared out in the simulated image. \\
+The amplitude of displacement in the example in Figure \ref{fig:evaporation_simulation_first_compare_SIM} is $\approx 0.4$ $\mu$m, this is in line with the peak to peak amplitude of an active turbomolecular pump given by $1$ $\mu$m, obtained in the PhD thesis of Priyamvada Bhaskar~\cite{Bhaskar}. While the lateral dot shift seen in Fig \ref{fig:evaporation_simulation_first_compare} is refleceted in this specific simulation, it does not represent the exact shape of the deformation of the dot.. For example the elliptical penumbra (\textcolor{tab_red}{red} in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) is very rough in the AFM image, but on average of equal height, while in the simulation the penumbra gradually decreases. Furthermore, the lower edge of the elliptical shape visible in the AFM dot below the circle (\textcolor{tab_cyan}{cyan} in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) is so faint as to be invisible in the AFM image, while it is very pronounced in the simulated image. The lower edge is sharp in the AFM image $61 \pm 9$ nm while it is smeared out in the simulated image. Parameters were obtained as described in Figure \ref{fig:penumbra_tilt_sigmas}.\\
The different roughness of circle and ellipse might suggest different possible reasons. First it could be a chronological effect where the circle is deposited first, and the ellipse is deposited second. Another possibility is that the vibration causes the displacement and bending of the mask in a pattern that is anharmonic, which causes the extreme points of the oscillation to be preferred. In order to investigate possible sources of this effect, the simulation was amended. \\
@@ -329,13 +331,13 @@ The different roughness of circle and ellipse might suggest different possible r
\caption{}
\label{fig:evaporation_simulation_sharpness_stick_power}
\end{subfigure}
- \caption{Comparison of the evaporation with harmonic oscillation (\subref{fig:evaporation_simulation_sharpness_stick_simple}), an initial phase with no elliptical oscillation and then drift to the elliptical shape (\subref{fig:evaporation_simulation_sharpness_stick_initial}) and an anharmonic oscillation with $\sin(\frac{t}{T} + \phi)^{20}$ (\subref{fig:evaporation_simulation_sharpness_stick_power}). The parameters of the ellipse are the same as in Figure \ref{fig:evaporation_simulation_first_compare}.}
+ \caption{(\subref{fig:evaporation_simulation_sharpness_stick_simple}) Comparison of the evaporation with harmonic oscillation. (\subref{fig:evaporation_simulation_sharpness_stick_initial}) initial phase with no elliptical oscillation and then drift to the elliptical shape. (\subref{fig:evaporation_simulation_sharpness_stick_power})an anharmonic oscillation with $\sin(\frac{t}{T} + \phi)^{20}$ . The parameters of the ellipse are the same as in Figure \ref{fig:evaporation_simulation_first_compare}.}
\label{fig:evaporation_simulation_sharpness}
\end{figure}
-The effect of this can be seen in Figure \ref{fig:evaporation_simulation_sharpness_stick_initial}. Compared with the simpler model (Figure \ref{fig:evaporation_simulation_sharpness_stick_simple}) this is more similar to the AFM measurement. Another possibility is an oscillation, which is not harmonic. For this instead of choosing the oscillation as $\sin(\frac{t}{T} + \phi)$ with $t$ being current time, $T$ the oscillation period and $\phi$ being a phase shift, the oscillation is instead parametrized as $\sin(\frac{t}{T} + \phi)^p$ with $p$ being the oscillation power. The resulting image can be seen in Figure \ref{fig:evaporation_simulation_sharpness_stick_power}. The effect of this is very similar to the initial circular shape. The vibrations causing the deformation and tilt are unlikely to be very anharmonic, but due to growth of thin films happening near grains, the actual growth of \ce{Pb} on the \ce{Si} is concentrated at the extreme positions of the oscillation.
+The effect of this can be seen in Figure \ref{fig:evaporation_simulation_sharpness_stick_initial}. Compared with the simpler model (Figure \ref{fig:evaporation_simulation_sharpness_stick_simple}) this is more similar to the AFM measurement. Another possibility is an oscillation, which is not harmonic. For this instead of choosing the oscillation as $\sin(\frac{t}{T} + \phi)$ with $t$ being current time, $T$ the oscillation period and $\phi$ being a phase shift. Instead the oscillation is parametrized as $\sin(\frac{t}{T} + \phi)^p$ with $p$ being the oscillation power. The resulting image can be seen in Figure \ref{fig:evaporation_simulation_sharpness_stick_power}. The effect of this is very similar to the initial circular shape. The vibrations causing the deformation and tilt are unlikely to be very anharmonic, but due to growth of thin films happening near grains, the actual growth of \ce{Pb} on the \ce{Si} is concentrated at the extreme positions of the oscillation.
-When looking at the measured AFM image, it is very noticeable, that the surface of the "half moon" is rougher than the surface of the inner circle. On average, the roughness is $1.7 \pm 0.4$ times higher. The \ce{Pb} can more easily grow at already established sites. This causes the growth to be in grains. With larger layer height this effect typically decreases. Another possible reason is a chronology of events where the growth happens first on the outer circle and then on the elliptical shape, as previously discussed. \\
+In the AFM image the surface of the "half moon" is rougher than the surface of the inner circle. On average, the roughness is $1.7 \pm 0.4$ times higher. The \ce{Pb} can more easily grow at already established sites. This causes the growth to be in grains. With larger layer height this effect typically decreases. Another possible reason is a chronology of events where the growth happens first on the outer circle and then on the elliptical shape, as previously discussed. \\
The grain growth can be be modeled in the simulation by penalizing deposition for pixels, where no material has been deposited previously. The probability to deposit on an empty surface is a user controlled parameter called "first\_layer\_depo\_prob". It specifies the probability with which a particle hitting the sample is deposited, when no material has previously been deposited on the relevant pixel. \\
@@ -356,27 +358,27 @@ The grain growth can be be modeled in the simulation by penalizing deposition fo
\caption{}
\label{fig:evaporation_simulation_rejection_comparison}
\end{subfigure}
- \caption{Simulated evaporation dots without (\subref{fig:evaporation_simulation_rejection_prev}) and with (\subref{fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. (\subref{fig:evaporation_simulation_rejection_comparison}) shows the AFM image from which the parameters were obtained. The parameters of the ellipse are the same as in Figure \ref{fig:evaporation_simulation_first_compare}.}
+ \caption{(\subref{fig:evaporation_simulation_rejection_prev}) simulated evaporation dots without rejection. (\subref{fig:evaporation_simulation_rejection_prev}) with (\subref{fig:evaporation_simulation_rejection_after}) $90$ \% probability to reject a deposition, when no previous deposition happened on the target pixel. (\subref{fig:evaporation_simulation_rejection_comparison}) the AFM image from which the parameters were obtained. The parameters of the ellipse are the same as in Figure \ref{fig:evaporation_simulation_first_compare}.}
\label{fig:evaporation_simulation_rejection}
\end{figure}
-The results of adding this penalty for initial deposition are shown in Figure \ref{fig:evaporation_simulation_rejection_after}. Compared to the previous simulation step in Figure \ref{fig:evaporation_simulation_rejection_prev} the dot appears more rough and the height has decreased. The outer tail of the ellipse disappears nearly completely. This version matches the deposition in the actual AFM image more closely, but crucially the decreased roughness of the elliptical part of the dot is not mirrored in the simulation. \\
+The results of adding this penalty for initial deposition are shown in Figure \ref{fig:evaporation_simulation_rejection_after}. Compared to the previous simulation step in Figure \ref{fig:evaporation_simulation_rejection_prev} the roughness of the dot increased while the height has decreased. The outer tail of the ellipse disappears nearly completely. This version matches the deposition in the actual AFM image more closely, but crucially the decreased roughness of the elliptical part of the dot is not mirrored in the simulation. \\
Particles impinging on the surface will typically diffuse to a nearby large nucleation site. The simulation does not take this effect into account at all. This could be implemented by having pixels interact with neighboring ones.\\
Apart from this the simulation image matches the one given by the AFM measurement pretty well. This shows that vibrations bending the hole pattern of the mask in combination with a displacement are a plausible explanation for the abberant penumbra of the measured dots. \\
+%
+%\begin{figure}[H]
+% \centering
+% \includegraphics[width=0.9\linewidth]{img/Evaporation/Sim/Field3_right_sim_progression.pdf}
+% \caption{Image of final simulation with parameters given in Figure \ref{fig:evaporation_simulation_first_compare} and an anharmonic oscillation with a power of $20$. The image is very grainy due to a low amount of rays cast.}
+% \label{fig:evaporation_simulation_progression}
+%\end{figure}
-\begin{figure}[H]
- \centering
- \includegraphics[width=0.9\linewidth]{img/Evaporation/Sim/Field3_right_sim_progression.pdf}
- \caption{Image of final simulation with parameters given in Figure \ref{fig:evaporation_simulation_first_compare} and an anharmonic oscillation with a power of $20$. The image is very grainy due to a low amount of rays cast.}
- \label{fig:evaporation_simulation_progression}
-\end{figure}
-
-The simulation software allows for taking in progress images at specified time intervals. An example for the previously discussed case can be seen in Figure \ref{fig:evaporation_simulation_progression}. With this, the chronology of events can be made visible more easily and visualizations could be created. \\
+%The simulation software allows for taking in progress images at specified time intervals. An example for the previously discussed case can be seen in Figure \ref{fig:evaporation_simulation_progression}. With this, the chronology of events can be made visible more easily and visualizations could be created. \\
\subsection{Software improvements}
-The simulation is accurate with respect to geometrical configuration of the Mask Aligner setup, but it assumes each particle hitting the surface either sticks to it or is rejected. This is a reasonable approximation as it follows the linear behavior from the Knudsen equation (Eq. \ref{eq:hertz_knudsen}), but it currently does not take into account grain size and diffusion of particles. \\
+The simulation is accurate with respect to geometrical configuration of the Mask Aligner setup, but it assumes each particle hitting the surface either sticks to it or is rejected. This is a reasonable approximation as it follows the linear behavior of the Knudsen equation (Eq. \ref{eq:hertz_knudsen}), but it currently does not take into account grain size and diffusion of particles. \\
The current way of implementing the simulation using Godot allowed for very quick implementation and bug fixing, but lacks in performance. Each ray is cast sequentially on the CPU and significant overhead is caused by the game engine computing things necessary for games, but unnecessary for the purposes of this simple simulation. This causes the render time of each image to be in the minute to hour range for images of higher resolutions. \\
diff --git a/conclusion.aux b/conclusion.aux
index 9ee55438a9f4993b7c61bc11f769dc667d40ce69..e8fda0c31ff142afccbe8f46b5713efcba2fa9d9 100644
--- a/conclusion.aux
+++ b/conclusion.aux
@@ -1,9 +1,9 @@
\relax
\providecommand\hyper@newdestlabel[2]{}
\citation{self_epitaxy}
-\@writefile{toc}{\contentsline {chapter}{Conclusions and Outlook}{82}{chapter*.95}\protected@file@percent }
+\@writefile{toc}{\contentsline {chapter}{Conclusions and Outlook}{79}{chapter*.92}\protected@file@percent }
\@setckpt{conclusion}{
-\setcounter{page}{84}
+\setcounter{page}{80}
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@@ -18,21 +18,21 @@
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+\setcounter{@todonotes@numberoftodonotes}{9}
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diff --git a/conclusion.tex b/conclusion.tex
index 72d25540eaaeef89dbe4ac3c898c4da74a4c1b39..b01dcc90e8343d8470b76720b79005cba5f2a467 100644
--- a/conclusion.tex
+++ b/conclusion.tex
@@ -8,15 +8,15 @@ Potential sources of cross capacitances on the Mask Aligner were investigated. L
Further research is needed on the prevention of faults in the mask preparation procedure, as issues with leakage currents, created in the process of mask bonding, were found to be the likely reason for large correlations in the capacitance signals. \\
-A new controller for the Mask Aligner was created by the electronics workshop. Programming of the new electronic was done, and initial performance tests showed favorable results over the old driver electronics. The new controller, however, still suffers from hardware issues, which is why tests under load could not be performed. A final performance test with calibration is still pending. \\
+A new controller for the Mask Aligner was created by the electronics workshop. Programming of the new electronic was done, and initial performance tests showed favorable results over the old driver electronics. The new controller still suffers from hardware issues, which is why tests under load could not be performed. A final performance test with calibration is still pending. \\
-The new controller will have to be tested under load for its driving behavior in comparison to the old driver and hardware instability issues will have to be resolved before larger scale evaporation can be performed.
-In order to adapt voltage output per channel, during approach, a control script for the Mask Aligner will also have to be developed and a new calibration as a function of voltage will have to be recorded. \\
+%The new controller will have to be tested under load for its driving behavior in comparison to the old driver and hardware instability issues will have to be resolved before larger scale evaporation can be performed.
+%In order to adapt voltage output per channel, during approach, a control script for the Mask Aligner will also have to be developed and a new calibration as a function of voltage will have to be recorded. \\
It was shown that sharp interfaces on the sub-$60$ nm scale can be created using the Mask Aligner and that under good conditions sharp pristine interfaces can be created using the previously established alignment procedure. Ellipsoidal artifacts on the resulting evaporation could be explained using a simulation approach as a result of vibrations that created bending and x-y shifting of the mask with regard to the sample. \\
-In future the Mask Aligner will be first used to test evaporation properties of \ce{Pb} on \ce{Au}. With this it will be established if \ce{Pb} is a good candidate for a superconductor/topological insulator interface and if the previously established alignment process can be used for other samples.
-Characterization of these new samples using a low temperature STM to record a superconducting gap is also a subject of future research. The determination of properties, such as appearance of a wetting layer is another important factor that will be determined in STM analysis.\\
+In future the Mask Aligner will be used to test evaporation properties of \ce{Pb} on \ce{Au}. With this it will be established if \ce{Pb} is a good candidate for a superconductor/topological insulator interface and if the previously established alignment process can be used for other samples.
+Characterization of these new samples using a low temperature STM to record a superconducting gap is also a subject of future research. \\
-Another possible candidate for evaporation on a topological insulator seems to be \ce{Pd}. As recent papers have shown it to have interesting self epitaxial growth properties when evaporated on the topological insulator \ce{(Bi_{1-x}Sb_{x})2Te3}~\cite{self_epitaxy}. This could be a good candidate for further research. The current evaporator attached is unable to perform palladium evaporation. If \ce{Pd} would be chosen over \ce{Pb} a new evaporator would need to be connected to the Mask Aligner system.
+Another possible candidate for evaporation on a topological insulator seems to be \ce{Pd}. Recent papers have shown it to have self epitaxial growth properties when evaporated on the topological insulator \ce{(Bi_{1-x}Sb_{x})2Te3}~\cite{self_epitaxy}. It is a candidate for further research.
diff --git a/pdfa.xmpi b/pdfa.xmpi
index 97b53416f69e84fbf5d3c4a8d89f1d9af6843721..4d2618236808e5ed2cb75d12a679651f339409ba 100644
--- a/pdfa.xmpi
+++ b/pdfa.xmpi
@@ -73,15 +73,15 @@
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<rdf:Description rdf:about="" xmlns:xmp="http://ns.adobe.com/xap/1.0/">
<xmp:CreatorTool>LaTeX with hyperref</xmp:CreatorTool>
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<xmpMM:DocumentID>uuid:C8CFC28F-88E1-7995-E9AD-F6D12EAD346B</xmpMM:DocumentID>
- <xmpMM:InstanceID>uuid:0C1B953A-D531-AA98-4A00-CAAC4C4399E1</xmpMM:InstanceID>
+ <xmpMM:InstanceID>uuid:481F9066-06B7-1DA2-26C2-59C37B3558E4</xmpMM:InstanceID>
</rdf:Description>
</rdf:RDF>
</x:xmpmeta>
diff --git a/thesis.aux b/thesis.aux
index de9e9c2eec7b2c0a0b1d95a7fab7ffdd70003283..dee47c936ecaddd31795de30da33d4227870d14e 100644
--- a/thesis.aux
+++ b/thesis.aux
@@ -10,9 +10,9 @@
\pgfsyspdfmark {pgfid1}{4736286}{22941088}
\pgfsyspdfmark {pgfid4}{37433768}{22961862}
\pgfsyspdfmark {pgfid5}{39282063}{22687136}
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\@input{chap03.aux}
\pgfsyspdfmark {pgfid11}{6237901}{29827744}
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\@input{chap05.aux}
\@input{conclusion.aux}
\@input{bibliography.aux}
-\@writefile{toc}{\contentsline {chapter}{List of Abbreviations}{87}{chapter*.97}\protected@file@percent }
+\@writefile{toc}{\contentsline {chapter}{List of Abbreviations}{82}{chapter*.94}\protected@file@percent }
\@input{appendix.aux}
\@input{acknowledgments.aux}
\providecommand\NAT@force@numbers{}\NAT@force@numbers
-\gdef \@abspage@last{97}
+\gdef \@abspage@last{92}
diff --git a/thesis.bbl b/thesis.bbl
index 5a54c852ceedee4b2eff47d40c1c12689ec4113a..d8b89819a0fdde3ba0db2754202c20d217d2f16a 100644
--- a/thesis.bbl
+++ b/thesis.bbl
@@ -63,18 +63,6 @@ P.~Bhaskar, ``{F}abrication and investigation of ultrahigh vacuum compatible
\url{https://publications.rwth-aachen.de/record/964278}
\BIBentrySTDinterwordspacing
-\bibitem{Tungsten_melt}
-F.~Cardarelli, \emph{Materials Handbook: A Concise Desktop Reference. Third
- Edition}, 01 2008.
-
-\bibitem{CASINO}
-\BIBentryALTinterwordspacing
-R.~J. Needs, M.~D. Towler, N.~D. Drummond, and P.~López~Ríos, ``Continuum
- variational and diffusion quantum monte carlo calculations,'' \emph{Journal
- of Physics: Condensed Matter}, vol.~22, no.~2, p. 023201, Dec. 2009.
- [Online]. Available: \url{http://dx.doi.org/10.1088/0953-8984/22/2/023201}
-\BIBentrySTDinterwordspacing
-
\bibitem{knudsen}
\BIBentryALTinterwordspacing
K.~W. Kolasinski, ``Surface science: Foundations of catalysis and
@@ -82,19 +70,6 @@ K.~W. Kolasinski, ``Surface science: Foundations of catalysis and
\url{https://api.semanticscholar.org/CorpusID:93015850}
\BIBentrySTDinterwordspacing
-\bibitem{Tungsten_evap}
-\BIBentryALTinterwordspacing
-C.~L. Yaws, Ed., \emph{{H}andbook of {C}hemical {C}ompound {D}ata for {P}rocess
- {S}afety}.\hskip 1em plus 0.5em minus 0.4em\relax Houston: Gulf Professional
- Publishing, 1997. [Online]. Available:
- \url{https://www.sciencedirect.com/science/article/pii/B9780884153818500152}
-\BIBentrySTDinterwordspacing
-
-\bibitem{tungsten_evaporation}
-T.~Takaai, ``{T}he {E}lectron {B}eam {M}elting of {T}ungsten (the electron beam
- melting of refractory metals (viii)),'' \emph{Journal of the Japan Institute
- of Metals}, vol.~30, no.~11, pp. 1027--1031, 1966.
-
\bibitem{Vapor_depo_princ}
\BIBentryALTinterwordspacing
P.~Harsha, \emph{Principles of Vapor Deposition of Thin Films}.\hskip 1em plus
@@ -108,10 +83,10 @@ H.~Kanda, A.~Uzum, A.~Baranwal, T.~A.~N. Peiris, T.~Umeyama, H.~Imahori,
curves for perovskite solar cells and simulation with reversed diode model,''
\emph{The Journal of Physical Chemistry C}, vol. 120, 11 2016.
-\bibitem{florian_forster}
-F.~Forster, ``Aufbau und {T}est eines {M}olekularstrahlverdampfers,'' Aachen,
- 2009, unpublished, but viewable on the Server of the 2nd institute of physics
- B.
+\bibitem{tungsten_evaporation}
+T.~Takaai, ``{T}he {E}lectron {B}eam {M}elting of {T}ungsten (the electron beam
+ melting of refractory metals (viii)),'' \emph{Journal of the Japan Institute
+ of Metals}, vol.~30, no.~11, pp. 1027--1031, 1966.
\bibitem{afm_physics}
N.~Li, Z.~Li, H.~Ding, S.~Ji, X.~Chen, and Q.-K. Xue, ``An atomic force
@@ -162,14 +137,10 @@ P.~Bhaskar, S.~Mathioudakis, T.~Olschewski, F.~Muckel, J.~R. Bindel,
\url{http://dx.doi.org/10.1063/1.5022462}
\BIBentrySTDinterwordspacing
-\bibitem{SiN_dielectric}
-\BIBentryALTinterwordspacing
-J.~Kischkat, S.~Peters, and B.~G. et~al., ``Mid-infrared optical properties of
- thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum
- nitride, and silicon nitride,'' \emph{Appl. Opt.}, vol.~51, no.~28, pp.
- 6789--6798, Oct 2012. [Online]. Available:
- \url{https://opg.optica.org/ao/abstract.cfm?URI=ao-51-28-6789}
-\BIBentrySTDinterwordspacing
+\bibitem{florian_forster}
+F.~Forster, ``Aufbau und {T}est eines {M}olekularstrahlverdampfers,'' Aachen,
+ 2009, unpublished, but viewable on the Server of the 2nd institute of physics
+ B.
\bibitem{Beeker}
J.~Beeker, ``Growth of {P}b islands with the help of an {U}ltrahigh {V}acuum
diff --git a/thesis.blg b/thesis.blg
index c715a9b63a8170c7e22419d8a7c637e5c2591cc5..514015a4f557f12cf1f245274bedac326c2ab181 100644
--- a/thesis.blg
+++ b/thesis.blg
@@ -9,22 +9,12 @@ Reallocating 'name_of_file' (item size: 1) to 12 items.
A level-1 auxiliary file: preface.aux
Reallocating 'name_of_file' (item size: 1) to 11 items.
A level-1 auxiliary file: chap01.aux
-Case mismatch error between cite keys bhaskar and Bhaskar
----line 27 of file chap01.aux
- : \citation{bhaskar
- : }
-I'm skipping whatever remains of this command
Reallocating 'name_of_file' (item size: 1) to 11 items.
A level-1 auxiliary file: chap02.aux
Reallocating 'name_of_file' (item size: 1) to 11 items.
A level-1 auxiliary file: chap03.aux
Reallocating 'name_of_file' (item size: 1) to 11 items.
A level-1 auxiliary file: chap04.aux
-Case mismatch error between cite keys olschewski and Olschewski
----line 35 of file chap04.aux
- : \citation{olschewski
- : }
-I'm skipping whatever remains of this command
Reallocating 'name_of_file' (item size: 1) to 11 items.
A level-1 auxiliary file: chap05.aux
Reallocating 'name_of_file' (item size: 1) to 15 items.
@@ -57,49 +47,48 @@ Warning--entry type for "Florian_forster" isn't style-file defined
-- IEEEtran.bst version 1.14 (2015/08/26) by Michael Shell.
-- http://www.michaelshell.org/tex/ieeetran/bibtex/
-- See the "IEEEtran_bst_HOWTO.pdf" manual for usage information.
-Warning--missing publisher in Tungsten_melt
Warning--missing publisher in SEM_book
Done.
-You've used 26 entries,
+You've used 22 entries,
4087 wiz_defined-function locations,
- 1010 strings with 12819 characters,
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-if$ -- 3799
+ 976 strings with 11916 characters,
+and the built_in function-call counts, 14048 in all, are:
+= -- 1156
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++ -- 141
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diff --git a/thesis.log b/thesis.log
index 24fc5ae851ff4dfdb7d6d20eae35e3969ec13edf..eea3a0ab04e4dea7e12439f229c075e760f9dfec 100644
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diff --git a/thesis.pdf b/thesis.pdf
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Binary files a/thesis.pdf and b/thesis.pdf differ
diff --git a/thesis.synctex.gz b/thesis.synctex.gz
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diff --git a/thesis.toc b/thesis.toc
index e28c0394a3137ed450cbb57e9b1df43089f99484..8bda8d7d1b35bec58b6924ef697faa0a57c58533 100644
--- a/thesis.toc
+++ b/thesis.toc
@@ -19,100 +19,98 @@
\contentsline {subsection}{\numberline {2.3.1}Motor screw configuration}{20}{subsection.2.3.1}%
\contentsline {subsection}{\numberline {2.3.2}Motor calibration}{21}{subsection.2.3.2}%
\contentsline {subsection}{\numberline {2.3.3}Optical alignment}{26}{subsection.2.3.3}%
-\contentsline {subsection}{\numberline {2.3.4}Approach curves}{28}{subsection.2.3.4}%
-\contentsline {subsection}{\numberline {2.3.5}Reproducibility}{32}{subsection.2.3.5}%
-\contentsline {subsubsection}{Reproducibility when removing sample/mask}{32}{section*.32}%
-\contentsline {subsection}{\numberline {2.3.6}Cross capacitances}{33}{subsection.2.3.6}%
-\contentsline {paragraph}{Leakage current}{38}{section*.40}%
-\contentsline {paragraph}{Improved gold pin fitting}{38}{section*.41}%
-\contentsline {subsection}{\numberline {2.3.7}Stop Conditions}{39}{subsection.2.3.7}%
-\contentsline {paragraph}{High correlation between capacitance curves}{39}{section*.43}%
-\contentsline {paragraph}{Low correlation between capacitance curves}{39}{section*.44}%
-\contentsline {section}{\numberline {2.4}Mask Aligner operation}{39}{section.2.4}%
-\contentsline {subsection}{\numberline {2.4.1}Sample preparation}{39}{subsection.2.4.1}%
-\contentsline {chapter}{\numberline {3}Electronics}{41}{chapter.3}%
-\contentsline {section}{\numberline {3.1}RHK piezo motor controller}{41}{section.3.1}%
-\contentsline {subsection}{\numberline {3.1.1}Overview}{41}{subsection.3.1.1}%
-\contentsline {paragraph}{amplitude}{41}{section*.45}%
-\contentsline {paragraph}{sweep period}{41}{section*.46}%
-\contentsline {paragraph}{time between sweeps}{41}{section*.47}%
-\contentsline {subsection}{\numberline {3.1.2}Pulse shape}{41}{subsection.3.1.2}%
-\contentsline {section}{\numberline {3.2}KIM001}{42}{section.3.2}%
-\contentsline {subsection}{\numberline {3.2.1}Overview}{42}{subsection.3.2.1}%
-\contentsline {subsection}{\numberline {3.2.2}Pulse shape}{42}{subsection.3.2.2}%
-\contentsline {subsection}{\numberline {3.2.3}Voltage behavior}{43}{subsection.3.2.3}%
-\contentsline {section}{\numberline {3.3}Mask Aligner controller "Walker"}{44}{section.3.3}%
-\contentsline {subsection}{\numberline {3.3.1}Overview}{44}{subsection.3.3.1}%
-\contentsline {subsection}{\numberline {3.3.2}Signal generation}{44}{subsection.3.3.2}%
-\contentsline {subsection}{\numberline {3.3.3}Fast flank}{45}{subsection.3.3.3}%
-\contentsline {subsection}{\numberline {3.3.4}Amplification}{46}{subsection.3.3.4}%
-\contentsline {subsection}{\numberline {3.3.5}Parameters}{46}{subsection.3.3.5}%
-\contentsline {paragraph}{Amplitude (amp)}{47}{section*.57}%
-\contentsline {paragraph}{Voltage (volt)}{47}{section*.58}%
-\contentsline {paragraph}{Channel}{47}{section*.59}%
-\contentsline {paragraph}{Max Step}{47}{section*.60}%
-\contentsline {paragraph}{Polarity}{47}{section*.61}%
-\contentsline {subsection}{\numberline {3.3.6}Measured pulse shape}{47}{subsection.3.3.6}%
-\contentsline {subsection}{\numberline {3.3.7}Operation with the Mask Aligner}{49}{subsection.3.3.7}%
-\contentsline {chapter}{\numberline {4}Mask Aligner repairs and optimizations}{51}{chapter.4}%
-\contentsline {section}{\numberline {4.1}Overview}{51}{section.4.1}%
-\contentsline {section}{\numberline {4.2}General UHV device preparation}{52}{section.4.2}%
-\contentsline {subsection}{\numberline {4.2.1}UHV compatible Soldering}{52}{subsection.4.2.1}%
-\contentsline {section}{\numberline {4.3}Soldering anchors}{52}{section.4.3}%
-\contentsline {section}{\numberline {4.4}Piezo regluing}{55}{section.4.4}%
-\contentsline {section}{\numberline {4.5}Z3 motor}{56}{section.4.5}%
-\contentsline {subsection}{\numberline {4.5.1}Front plate repair}{57}{subsection.4.5.1}%
-\contentsline {subsection}{\numberline {4.5.2}Small capacitance stack}{59}{subsection.4.5.2}%
-\contentsline {section}{\numberline {4.6}Feed through cabling optimizations}{60}{section.4.6}%
-\contentsline {section}{\numberline {4.7}Final test}{61}{section.4.7}%
-\contentsline {chapter}{\numberline {5}Evaporations and measurement}{63}{chapter.5}%
-\contentsline {section}{\numberline {5.1}Evaporation configuration}{63}{section.5.1}%
-\contentsline {section}{\numberline {5.2}Contamination}{65}{section.5.2}%
-\contentsline {section}{\numberline {5.3}Penumbra}{66}{section.5.3}%
-\contentsline {section}{\numberline {5.4}Tilt and deformation}{71}{section.5.4}%
-\contentsline {section}{\numberline {5.5}Simulation}{74}{section.5.5}%
-\contentsline {subsection}{\numberline {5.5.1}Overview and principle}{74}{subsection.5.5.1}%
-\contentsline {subsection}{\numberline {5.5.2}Results}{76}{subsection.5.5.2}%
-\contentsline {subsection}{\numberline {5.5.3}Software improvements}{80}{subsection.5.5.3}%
-\contentsline {subsection}{\numberline {5.5.4}Final Remark}{81}{subsection.5.5.4}%
-\contentsline {chapter}{Conclusions and Outlook}{82}{chapter*.95}%
-\contentsline {chapter}{Bibliography}{84}{chapter*.96}%
-\contentsline {chapter}{List of Abbreviations}{87}{chapter*.97}%
-\contentsline {chapter}{Appendix}{i}{chapter*.98}%
+\contentsline {subsection}{\numberline {2.3.4}Capacitive distance measurements}{28}{subsection.2.3.4}%
+\contentsline {subsection}{\numberline {2.3.5}Reproducibility}{31}{subsection.2.3.5}%
+\contentsline {subsubsection}{Reproducibility when removing sample/mask}{31}{section*.31}%
+\contentsline {subsection}{\numberline {2.3.6}Cross capacitances}{32}{subsection.2.3.6}%
+\contentsline {paragraph}{Leakage current}{37}{section*.38}%
+\contentsline {paragraph}{Improved gold pin fitting}{37}{section*.39}%
+\contentsline {section}{\numberline {2.4}Mask Aligner operation}{38}{section.2.4}%
+\contentsline {subsection}{\numberline {2.4.1}Sample preparation}{38}{subsection.2.4.1}%
+\contentsline {chapter}{\numberline {3}Electronics}{39}{chapter.3}%
+\contentsline {section}{\numberline {3.1}RHK piezo motor controller}{39}{section.3.1}%
+\contentsline {subsection}{\numberline {3.1.1}Overview}{39}{subsection.3.1.1}%
+\contentsline {paragraph}{amplitude}{39}{section*.41}%
+\contentsline {paragraph}{sweep period}{39}{section*.42}%
+\contentsline {paragraph}{time between sweeps}{39}{section*.43}%
+\contentsline {subsection}{\numberline {3.1.2}Pulse shape}{39}{subsection.3.1.2}%
+\contentsline {section}{\numberline {3.2}KIM001}{40}{section.3.2}%
+\contentsline {subsection}{\numberline {3.2.1}Overview}{40}{subsection.3.2.1}%
+\contentsline {subsection}{\numberline {3.2.2}Pulse shape}{40}{subsection.3.2.2}%
+\contentsline {subsection}{\numberline {3.2.3}Voltage behavior}{41}{subsection.3.2.3}%
+\contentsline {section}{\numberline {3.3}Mask Aligner controller "Walker"}{42}{section.3.3}%
+\contentsline {subsection}{\numberline {3.3.1}Overview}{42}{subsection.3.3.1}%
+\contentsline {subsection}{\numberline {3.3.2}Signal generation}{42}{subsection.3.3.2}%
+\contentsline {subsection}{\numberline {3.3.3}Fast flank}{43}{subsection.3.3.3}%
+\contentsline {subsection}{\numberline {3.3.4}Amplification}{44}{subsection.3.3.4}%
+\contentsline {subsection}{\numberline {3.3.5}Programming}{45}{subsection.3.3.5}%
+\contentsline {subsubsection}{Parameters}{45}{section*.54}%
+\contentsline {paragraph}{Amplitude (amp)}{45}{section*.55}%
+\contentsline {paragraph}{Voltage (volt)}{45}{section*.56}%
+\contentsline {paragraph}{Channel}{45}{section*.57}%
+\contentsline {paragraph}{Max Step}{45}{section*.58}%
+\contentsline {paragraph}{Polarity}{45}{section*.59}%
+\contentsline {subsection}{\numberline {3.3.6}Measured pulse shape}{45}{subsection.3.3.6}%
+\contentsline {subsection}{\numberline {3.3.7}Operation with the Mask Aligner}{47}{subsection.3.3.7}%
+\contentsline {chapter}{\numberline {4}Mask Aligner repairs and optimizations}{49}{chapter.4}%
+\contentsline {section}{\numberline {4.1}Overview}{49}{section.4.1}%
+\contentsline {section}{\numberline {4.2}General UHV device preparation}{50}{section.4.2}%
+\contentsline {subsection}{\numberline {4.2.1}UHV compatible Soldering}{50}{subsection.4.2.1}%
+\contentsline {section}{\numberline {4.3}Soldering anchors}{50}{section.4.3}%
+\contentsline {section}{\numberline {4.4}Piezo regluing}{53}{section.4.4}%
+\contentsline {section}{\numberline {4.5}Z3 motor}{54}{section.4.5}%
+\contentsline {subsection}{\numberline {4.5.1}Front plate repair}{55}{subsection.4.5.1}%
+\contentsline {subsection}{\numberline {4.5.2}Small capacitance stack}{57}{subsection.4.5.2}%
+\contentsline {section}{\numberline {4.6}Feed through cabling optimizations}{58}{section.4.6}%
+\contentsline {section}{\numberline {4.7}Final test}{59}{section.4.7}%
+\contentsline {chapter}{\numberline {5}Evaporations and measurement}{61}{chapter.5}%
+\contentsline {section}{\numberline {5.1}Evaporation configuration}{61}{section.5.1}%
+\contentsline {section}{\numberline {5.2}Contamination}{63}{section.5.2}%
+\contentsline {section}{\numberline {5.3}Penumbra}{64}{section.5.3}%
+\contentsline {section}{\numberline {5.4}Tilt and deformation}{69}{section.5.4}%
+\contentsline {section}{\numberline {5.5}Simulation}{72}{section.5.5}%
+\contentsline {subsection}{\numberline {5.5.1}Overview and principle}{72}{subsection.5.5.1}%
+\contentsline {subsection}{\numberline {5.5.2}Results}{74}{subsection.5.5.2}%
+\contentsline {subsection}{\numberline {5.5.3}Software improvements}{77}{subsection.5.5.3}%
+\contentsline {subsection}{\numberline {5.5.4}Final Remark}{78}{subsection.5.5.4}%
+\contentsline {chapter}{Conclusions and Outlook}{79}{chapter*.92}%
+\contentsline {chapter}{Bibliography}{80}{chapter*.93}%
+\contentsline {chapter}{List of Abbreviations}{82}{chapter*.94}%
+\contentsline {chapter}{Appendix}{i}{chapter*.95}%
\contentsline {section}{\numberline {A}LockIn amplifier settings}{i}{section.5.1}%
\contentsline {section}{\numberline {B}Walker principle diagram}{ii}{section.5.2}%
\contentsline {section}{\numberline {C}Walker circuit diagrams}{ii}{section.5.3}%
\contentsline {section}{\numberline {D}New driver electronics}{vi}{section.5.4}%
-\contentsline {paragraph}{pulse?}{vi}{section*.101}%
-\contentsline {paragraph}{pol x}{vi}{section*.102}%
-\contentsline {paragraph}{amp x}{vi}{section*.103}%
-\contentsline {paragraph}{volt x}{vi}{section*.104}%
-\contentsline {paragraph}{channel x}{vi}{section*.105}%
-\contentsline {paragraph}{maxmstep x}{vi}{section*.106}%
-\contentsline {paragraph}{step x}{vi}{section*.107}%
-\contentsline {paragraph}{mstep x}{vi}{section*.108}%
-\contentsline {paragraph}{cancel}{vii}{section*.109}%
-\contentsline {paragraph}{help}{vii}{section*.110}%
+\contentsline {paragraph}{pulse?}{vi}{section*.98}%
+\contentsline {paragraph}{pol x}{vi}{section*.99}%
+\contentsline {paragraph}{amp x}{vi}{section*.100}%
+\contentsline {paragraph}{volt x}{vi}{section*.101}%
+\contentsline {paragraph}{channel x}{vi}{section*.102}%
+\contentsline {paragraph}{maxmstep x}{vi}{section*.103}%
+\contentsline {paragraph}{step x}{vi}{section*.104}%
+\contentsline {paragraph}{mstep x}{vi}{section*.105}%
+\contentsline {paragraph}{cancel}{vii}{section*.106}%
+\contentsline {paragraph}{help}{vii}{section*.107}%
\contentsline {section}{\numberline {E}Raycast Simulation}{vii}{section.5.5}%
-\contentsline {paragraph}{radius\_1}{vii}{section*.111}%
-\contentsline {paragraph}{angle}{vii}{section*.112}%
-\contentsline {paragraph}{radius\_mask}{vii}{section*.113}%
-\contentsline {paragraph}{distance\_circle\_mask}{vii}{section*.114}%
-\contentsline {paragraph}{distance\_sample}{vii}{section*.115}%
-\contentsline {paragraph}{rays\_per\_frame}{vii}{section*.116}%
-\contentsline {paragraph}{running\_time}{vii}{section*.117}%
-\contentsline {paragraph}{deposition\_gain}{vii}{section*.118}%
-\contentsline {paragraph}{penalize\_deposition}{vii}{section*.119}%
-\contentsline {paragraph}{first\_layer\_deposition\_prob}{vii}{section*.120}%
-\contentsline {paragraph}{oscillation\_period}{vii}{section*.121}%
-\contentsline {paragraph}{delay\_oscill\_time}{viii}{section*.122}%
-\contentsline {paragraph}{save\_in\_progress\_images}{viii}{section*.123}%
-\contentsline {paragraph}{save\_intervall}{viii}{section*.124}%
-\contentsline {paragraph}{oscillation\_dir}{viii}{section*.125}%
-\contentsline {paragraph}{oscillation\_rot\_s}{viii}{section*.126}%
-\contentsline {paragraph}{oscillation\_rot\_e}{viii}{section*.127}%
-\contentsline {paragraph}{random\_seed}{viii}{section*.128}%
-\contentsline {paragraph}{x\_min, x\_max, y\_min, y\_max}{viii}{section*.129}%
-\contentsline {paragraph}{resolution}{viii}{section*.130}%
-\contentsline {paragraph}{path}{viii}{section*.131}%
-\contentsline {chapter}{Acknowledgments}{ix}{chapter*.132}%
+\contentsline {paragraph}{radius\_1}{vii}{section*.108}%
+\contentsline {paragraph}{angle}{vii}{section*.109}%
+\contentsline {paragraph}{radius\_mask}{vii}{section*.110}%
+\contentsline {paragraph}{distance\_circle\_mask}{vii}{section*.111}%
+\contentsline {paragraph}{distance\_sample}{vii}{section*.112}%
+\contentsline {paragraph}{rays\_per\_frame}{vii}{section*.113}%
+\contentsline {paragraph}{running\_time}{vii}{section*.114}%
+\contentsline {paragraph}{deposition\_gain}{vii}{section*.115}%
+\contentsline {paragraph}{penalize\_deposition}{vii}{section*.116}%
+\contentsline {paragraph}{first\_layer\_deposition\_prob}{vii}{section*.117}%
+\contentsline {paragraph}{oscillation\_period}{vii}{section*.118}%
+\contentsline {paragraph}{delay\_oscill\_time}{viii}{section*.119}%
+\contentsline {paragraph}{save\_in\_progress\_images}{viii}{section*.120}%
+\contentsline {paragraph}{save\_intervall}{viii}{section*.121}%
+\contentsline {paragraph}{oscillation\_dir}{viii}{section*.122}%
+\contentsline {paragraph}{oscillation\_rot\_s}{viii}{section*.123}%
+\contentsline {paragraph}{oscillation\_rot\_e}{viii}{section*.124}%
+\contentsline {paragraph}{random\_seed}{viii}{section*.125}%
+\contentsline {paragraph}{x\_min, x\_max, y\_min, y\_max}{viii}{section*.126}%
+\contentsline {paragraph}{resolution}{viii}{section*.127}%
+\contentsline {paragraph}{path}{viii}{section*.128}%
+\contentsline {chapter}{Acknowledgments}{ix}{chapter*.129}%