diff --git a/chap01.aux b/chap01.aux
index ebf45b8cb059b65beed986c695f50490aeaf59e1..f7c57a244b0fb1b6978254afc6ef8623d96318f6 100644
--- a/chap01.aux
+++ b/chap01.aux
@@ -15,8 +15,8 @@
\newlabel{sub@fig:penumbra_explanation_tilt_2d}{{a}{7}{\relax }{figure.caption.6}{}}
\newlabel{fig:penumbra_explanation_tilt_sim}{{1.2b}{7}{\relax }{figure.caption.6}{}}
\newlabel{sub@fig:penumbra_explanation_tilt_sim}{{b}{7}{\relax }{figure.caption.6}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {1.2}{\ignorespaces A diagram of the evaporation rays for a tilted mask with only one hole (\subref {fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text {i}}$ that appear in a cross-section. (\subref {fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ $ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ $\mu $m and a hole diameter of $3$ $\mu $m. Program used for simulation is described in Section \ref {sec:simulation}}}{7}{figure.caption.6}\protected@file@percent }
-\newlabel{fig:penumbra_explanation_tilt}{{1.2}{7}{A diagram of the evaporation rays for a tilted mask with only one hole (\subref {fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text {i}}$ that appear in a cross-section. (\subref {fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ $ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ $\mu $m and a hole diameter of $3$ $\mu $m. Program used for simulation is described in Section \ref {sec:simulation}}{figure.caption.6}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {1.2}{\ignorespaces A diagram of the evaporation rays for a tilted mask with only one hole (\subref {fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text {i}}$ that appear in a cross-section. (\subref {fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ $ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ {\textmu }m and a hole diameter of $3$ {\textmu }m. Program used for simulation is described in Section \ref {sec:simulation}}}{7}{figure.caption.6}\protected@file@percent }
+\newlabel{fig:penumbra_explanation_tilt}{{1.2}{7}{A diagram of the evaporation rays for a tilted mask with only one hole (\subref {fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text {i}}$ that appear in a cross-section. (\subref {fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ $ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ {\textmu }m and a hole diameter of $3$ {\textmu }m. Program used for simulation is described in Section \ref {sec:simulation}}{figure.caption.6}{}}
\@writefile{toc}{\contentsline {section}{\numberline {1.2}Electron beam evaporation}{7}{section.1.2}\protected@file@percent }
\@writefile{lof}{\contentsline {figure}{\numberline {1.3}{\ignorespaces Schematic of a general electron beam evaporation chamber. The B-field is used to focus the beam onto the source. The shutter can interrupt the beam directed to the sample. The funnel is used to focus the vapor beam. }}{8}{figure.caption.7}\protected@file@percent }
\newlabel{fig:e-beam_evap}{{1.3}{8}{Schematic of a general electron beam evaporation chamber. The B-field is used to focus the beam onto the source. The shutter can interrupt the beam directed to the sample. The funnel is used to focus the vapor beam}{figure.caption.7}{}}
@@ -84,14 +84,14 @@
\newlabel{sub@fig:optical_approach_b}{{b}{22}{\relax }{figure.caption.19}{}}
\newlabel{fig:optical_approach_c}{{1.15c}{22}{\relax }{figure.caption.19}{}}
\newlabel{sub@fig:optical_approach_c}{{c}{22}{\relax }{figure.caption.19}{}}
-\@writefile{lof}{\contentsline {figure}{\numberline {1.15}{\ignorespaces The progression of optical alignment up from $65 \pm 5$ $\mu $m (a) to $25 \pm 5$ $\mu $m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length.}}{22}{figure.caption.19}\protected@file@percent }
-\newlabel{fig:optical_approach}{{1.15}{22}{The progression of optical alignment up from $65 \pm 5$ $\mu $m (a) to $25 \pm 5$ $\mu $m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length}{figure.caption.19}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {1.15}{\ignorespaces The progression of optical alignment up from $65 \pm 5$ {\textmu }m (a) to $25 \pm 5$ {\textmu }m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length.}}{22}{figure.caption.19}\protected@file@percent }
+\newlabel{fig:optical_approach}{{1.15}{22}{The progression of optical alignment up from $65 \pm 5$ {\textmu }m (a) to $25 \pm 5$ {\textmu }m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length}{figure.caption.19}{}}
\@writefile{toc}{\contentsline {subsection}{\numberline {1.5.4}Capacitive distance measurements}{23}{subsection.1.5.4}\protected@file@percent }
\newlabel{fig:mask_aligner_nomenclature_capacitances_motors}{{1.16a}{23}{\relax }{figure.caption.20}{}}
\newlabel{sub@fig:mask_aligner_nomenclature_capacitances_motors}{{a}{23}{\relax }{figure.caption.20}{}}
\newlabel{fig:mask_aligner_nomenclature_capacitances_mask}{{1.16b}{23}{\relax }{figure.caption.20}{}}
\newlabel{sub@fig:mask_aligner_nomenclature_capacitances_mask}{{b}{23}{\relax }{figure.caption.20}{}}
-\newlabel{fig:mask_aligner_nomenclature_capacitances}{{\caption@xref {fig:mask_aligner_nomenclature_capacitances}{ on input line 322}}{23}{Capacitive distance measurements}{figure.caption.20}{}}
+\newlabel{fig:mask_aligner_nomenclature_capacitances}{{\caption@xref {fig:mask_aligner_nomenclature_capacitances}{ on input line 321}}{23}{Capacitive distance measurements}{figure.caption.20}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {1.16}{\ignorespaces (\subref {fig:mask_aligner_nomenclature_capacitances_motors}) cross-section of the Mask Aligner showing the labeling and rough positioning of the capacitance sensors on the mask (inner \textcolor {tab_red}{red} triangle) in relation to the three piezo motor stacks. (\subref {fig:mask_aligner_nomenclature_capacitances_mask}) diagram of the mask's dimensions as well as labeling of the mask's sensors. The inset shows the dimensions of the holey part of the mask, which is used to create patterns. Below is a cross section of the materials used.}}{23}{figure.caption.20}\protected@file@percent }
\@writefile{lof}{\contentsline {figure}{\numberline {1.17}{\ignorespaces Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ one after another. The RHK relay controls, which motor is currently driven.}}{24}{figure.caption.21}\protected@file@percent }
\newlabel{fig:diagram_MA_circ}{{1.17}{24}{Diagram showing how communication with the RHK and the Lock-in amplifier is done and how they interact with elements in vacuum. Red lines are input, black lines are output lines. The capacitance relay is used to measure $C_i$ one after another. The RHK relay controls, which motor is currently driven}{figure.caption.21}{}}
diff --git a/chap01.tex b/chap01.tex
index 0296312727cd6c5ce5c90298cde5359d151ec4e1..4c21799326267493d99b7351ad325d0160b6594d 100644
--- a/chap01.tex
+++ b/chap01.tex
@@ -31,7 +31,7 @@ The width of the penumbra $p$ is determined by the distance of the crucible to t
\label{fig:penumbra_explanation}
\end{figure}
-When using stencil lithography, the penumbra should be as small as possible. The target penumbra for the mask aligner used in this thesis is $< 100$ nm~\cite{Bhaskar}. A certain size is required for the crucible to be able to evaporate lead efficiently. The distance to the beam source cannot be increased indefinitely since the amount of material deposited on the sample falls off with the square of $d$. For our setup, these quantities are: $b\approx6$ mm, $l\approx25$ cm. For a desired $p < 100$ nm a distance between mask and sample of at most $d\approx4$ $\mu$m is needed.\\
+When using stencil lithography, the penumbra should be as small as possible. The target penumbra for the mask aligner used in this thesis is $< 100$ nm~\cite{Bhaskar}. A certain size is required for the crucible to be able to evaporate lead efficiently. The distance to the beam source cannot be increased indefinitely since the amount of material deposited on the sample falls off with the square of $d$. For our setup, these quantities are: $b\approx6$ mm, $l\approx25$ cm. For a desired $p < 100$ nm a distance between mask and sample of at most $d\approx4$ {\textmu}m is needed.\\
\subsubsection{Tilt induced penumbra}
Formerly, the model for the penumbra assumed perfect alignment between mask and sample. However, if the mask is tilted with respect to the sample, the distance on one side of the mask can be larger than that on the other.
@@ -51,7 +51,7 @@ This results in an elliptical penumbra, as shown in Figure \ref{fig:penumbra_exp
\caption{}
\label{fig:penumbra_explanation_tilt_sim}
\end{subfigure}
- \caption{A diagram of the evaporation rays for a tilted mask with only one hole (\subref{fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text{i}}$ that appear in a cross-section. (\subref{fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ$ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ $\mu$m and a hole diameter of $3$ $\mu$m. Program used for simulation is described in Section \ref{sec:simulation}}
+ \caption{A diagram of the evaporation rays for a tilted mask with only one hole (\subref{fig:penumbra_explanation_tilt_2d}) showing the 2 different penumbral widths $p_{\text{i}}$ that appear in a cross-section. (\subref{fig:penumbra_explanation_tilt_sim}) Simulated evaporation with large penumbra for a tilt angle of $45^\circ$ the penumbra, is wider on one side than on the other. The penumbra in the simulation is for a mask sample distance of $200$ {\textmu}m and a hole diameter of $3$ {\textmu}m. Program used for simulation is described in Section \ref{sec:simulation}}
\label{fig:penumbra_explanation_tilt}
\end{figure}
diff --git a/chap02.tex b/chap02.tex
index 23171b272e27edb6d5819e33ed540df3d404f45e..934f1388ec001655cd3054a82d66ef3feddb7052 100644
--- a/chap02.tex
+++ b/chap02.tex
@@ -12,12 +12,11 @@ Electron beam evaporation, also known as \textbf{E}lectron-\textbf{b}eam \textbf
\end{figure}
The setup of an electron beam evaporator is shown in Figure \ref{fig:e-beam_evap}. The source material is placed inside a tungsten crucible as pellets of ultrapure ($>99$ \%) material.
-%The crucible is also heated during the evaporation process, in order to prevent it from being damaged, a material with a high melting point is chosen. Tungsten with a melting point of 3695 K ~\cite{Tungsten_melt} is usually chosen.
-%Additionally, the crucible usually has to be water cooled to avoid outgassing during the evaporation process.
-
To heat the source material, it is bombarded with a high-voltage electron beam ($\mathcal{O}$($1$~kV)), which is emitted by either an electron gun or a filament. This beam usually is focused using magnetic fields to hit the source material. Energy transfer heats the hit atoms and eventually leads to the evaporation according to its vapor pressure.\\
-%The penetration depth of electron with ($<5$ kV) is less than 0.4 $\mu$m (estimated using CASINO Monte Carlo software)~\cite{CASINO} so the heating occurs only very near to the source material's surface. This allows for less energy loss and more controlled evaporation as the crucible and the rest of the system is not heated by the electron beam directly, but only by the radiant heat emitted by the source material.\\
+%The crucible is also heated during the evaporation process, in order to prevent it from being damaged, a material with a high melting point is chosen. Tungsten with a melting point of 3695 K ~\cite{Tungsten_melt} is usually chosen.
+%Additionally, the crucible usually has to be water cooled to avoid outgassing during the evaporation process.
+%The penetration depth of electron with ($<5$ kV) is less than 0.4 {\textmu}m (estimated using CASINO Monte Carlo software)~\cite{CASINO} so the heating occurs only very near to the source material's surface. This allows for less energy loss and more controlled evaporation as the crucible and the rest of the system is not heated by the electron beam directly, but only by the radiant heat emitted by the source material.\\
When the material's vapor pressure exceeds the surrounding environments pressure, a vapor forms. The sample is kept at a temperature much colder than the source material's temperature, due to this the material beam will condense on the substrate's surface forming a thin film. To regulate the deposition process, a shutter is employed, allowing for controlled release of the material. \\
@@ -99,7 +98,7 @@ The direction is specified by mathematical sign, where $-$ specifies the approac
\section{Slip stick principle}
The movement of the mask stage is controlled by the mask aligner, which utilizes a system consisting of three motors, each comprising six piezo stacks. Each piezo stack is made up of four piezo crystals that expand or contract when a DC voltage is applied. To facilitate the movement of the stage, a sapphire prism is clamped between the six piezo stacks. When a voltage amplitude is applied to the piezo stacks, the prism is displaced by the stacks, enabling precise movement of the stage. The operating principle of this mechanism is illustrated in Figure \ref{fig:slip_stick_diagram}. \\
-The movement of the prism is achieved through a two-stage process. Initially, a slowly increasing pulse, known as the "slow flank," is applied to the piezo, causing it to move the prism. This is followed by a rapid pulse, lasting less than $1$ $\mu$s, which contracts the piezo back to its original position. However, due to inertia, the prism remains in its new position. This rapid pulse is referred to as the "fast flank." By repeating this sequence, the prism can be moved in a controlled manner. The direction of movement is determined by the polarity of the voltage amplitude signal. The simplest waveform that can achieve this movement is a sawtooth wave, although other signal shapes that adhere to this principle can also be used.
+The movement of the prism is achieved through a two-stage process. Initially, a slowly increasing pulse, known as the "slow flank," is applied to the piezo, causing it to move the prism. This is followed by a rapid pulse, lasting less than $1$ {\textmu}s, which contracts the piezo back to its original position. However, due to inertia, the prism remains in its new position. This rapid pulse is referred to as the "fast flank." By repeating this sequence, the prism can be moved in a controlled manner. The direction of movement is determined by the polarity of the voltage amplitude signal. The simplest waveform that can achieve this movement is a sawtooth wave, although other signal shapes that adhere to this principle can also be used.
\begin{figure}[H]
\centering
@@ -240,7 +239,7 @@ step size/V is larger by $\approx 0.3$. This calibration is used to compensate m
The motor behavior exhibits a linear relationship with voltage, but the slope of this relationship varies between motors. An optimal point, where all motors respond similarly, is found at $80$ V. Notably, the Z3 motor exhibits a significantly different slope, with a step size per Volt that is approximately $0.3$ larger than the other motors. This calibration is used to compensate for variations in motor step size, which helps to prevent tilting. To achieve this, different voltage pulses need to be applied to the various motor channels. The electronics required for this purpose are discussed in more detail in Chapter \ref{sec:walker}.\\
\subsection{Optical alignment}
-The capacitance sensors cannot be used for alignement when the mask sample distance is very large, since the signal is noise dominated at that point. Therefore one starts by aligning optically, down to the optical limit ($25$ $\mu$m) of this setup. \\
+The capacitance sensors cannot be used for alignement when the mask sample distance is very large, since the signal is noise dominated at that point. Therefore one starts by aligning optically, down to the optical limit ($25$ {\textmu}m) of this setup. \\
To do that the sample has to be aligned so that its surface normal
is perpendicular to the camera's view direction. No sample surface can be
seen in camera view. No upwards tilt can be observed when viewing the side
@@ -273,7 +272,7 @@ placed or angled too low, (b) too high and (c) placed in good alignment. }
\label{fig:camera_alignment_example}
\end{figure}
-To measure length scales the Bresser MikroCamLab software is used. To calibrate the length scale of the software the sample ($5940 \pm 20 $ $\mu$m) is chosen.
+To measure length scales the Bresser MikroCamLab software is used. To calibrate the length scale of the software the sample ($5940 \pm 20 $ {\textmu}m) is chosen.
After the camera alignment the mask is moved close to the sample until a small gap remains. Then any mask sample tilt is corrected iteratively (Fig. \ref{fig:optical_approach_a}). Then the mask is moved toward the sample until only a five pixel gap remains (Fig. \ref{fig:optical_approach}\subref{fig:optical_approach_b}, \subref{fig:optical_approach_c}). Direct contact of the sample has to be avoided at this stage. In camera view direction, the mask and sample should now be aligned within
achievable optical accuracy.
@@ -295,7 +294,7 @@ achievable optical accuracy.
\caption{}
\label{fig:optical_approach_c}
\end{subfigure}
- \caption{The progression of optical alignment up from $65 \pm 5$ $\mu$m (a) to $25 \pm 5$ $\mu$m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length.}
+ \caption{The progression of optical alignment up from $65 \pm 5$ {\textmu}m (a) to $25 \pm 5$ {\textmu}m (c) mask sample distance. Measurement was obtained optically using measurement software and the sample's edge as a reference length.}
\label{fig:optical_approach}
\end{figure}
@@ -304,7 +303,7 @@ achievable optical accuracy.
\subsection{Capacitive distance measurements}
The mask is aligned with the sample using capacitive measurements. The three capacitive sensors on the mask are configured to correspond with the three motors, as shown in Figure \ref{fig:mask_aligner_nomenclature_capacitances_motors}. The sensors are labeled accordingly, although it is worth noting that not all masks are assembled correctly. \\
-The masks used in this setup were manufactured by Norcada in Canada. Each mask consists of a $200$ $\mu$m thick \ce{Si} body. At the center of the mask, a $100\times100$ $\mu$m silicon nitride (\ce{SiN}) membrane is situated, featuring circular holes with a diameter of $3$ $\mu$m, spaced $10$ $\mu$m apart. The SiN layer covers the entire mask and is 1 $\mu$m thick. A trench is carved into the Si body below the center of the mask. \\
+The masks used in this setup were manufactured by Norcada in Canada. Each mask consists of a $200$ {\textmu}m thick \ce{Si} body. At the center of the mask, a $100\times100$ {\textmu}m silicon nitride (\ce{SiN}) membrane is situated, featuring circular holes with a diameter of $3$ {\textmu}m, spaced $10$ {\textmu}m apart. The SiN layer covers the entire mask and is 1 {\textmu}m thick. A trench is carved into the Si body below the center of the mask. \\
Three gold pads, functioning as capacitive sensors, are located around the hole membrane. These pads are positioned below an insulating layer of approximately $100$ nm thick silicon dioxide (\ce{SiO2}), which is situated at the bottom of a trench in the \ce{Si} body. The gold pads are $0.7$ mm away from the hole membrane and are arranged in an equilateral triangle around it. The dimensions of the mask and the capacitive sensors are illustrated in Figure \ref{fig:mask_aligner_nomenclature_capacitances_mask}.
\begin{figure}[H]
@@ -385,7 +384,7 @@ where the mask is touching the sample.}
\label{fig:approach_curve_example}
\end{figure}
-A typical approach curve, from a measured distance of $25 \pm 5$ $\mu$m to full contact is shown in Figure \ref{fig:approach_curve_example_cap}. \\
+A typical approach curve, from a measured distance of $25 \pm 5$ {\textmu}m to full contact is shown in Figure \ref{fig:approach_curve_example_cap}. \\
Typically, the mask initially contacts the sample at a single point or edge, as illustrated in Figure \ref{fig:approach_curve_example_first}.This initial contact restricts the movement of the mask on the corresponding motor, resulting in a change in the step size. Consequently, the slope of the approach curve changes. \\
If the mask subsequently contacts the sample at another point (Figure \ref{fig:approach_curve_example_second}), the step size decreases again, which is labeled as "Second contact" in Figure \ref{fig:approach_curve_example_cap}. \\
@@ -499,7 +498,7 @@ Reinsertion of the sample also resulted in a difference in approach curves of $\
%%of the model. It does not take into account any stray capacitances the system
%%might have. \\
%%
-%%The model in Figure \ref{fig:cross_cap_approach_sim} assumes a distance between the sensors on the z-axis of $440$ nm for C1-C2 and $220$ nm for C2-C3. A distance that is well within the optical accuracy of $\approx 5$ $\mu$m for maximum zoom and resolution. Even for such a small difference, the deviation between the curves, is easily visible. \\
+%%The model in Figure \ref{fig:cross_cap_approach_sim} assumes a distance between the sensors on the z-axis of $440$ nm for C1-C2 and $220$ nm for C2-C3. A distance that is well within the optical accuracy of $\approx 5$ {\textmu}m for maximum zoom and resolution. Even for such a small difference, the deviation between the curves, is easily visible. \\
%%
%%However, measured capacitances show a deviation in behavior from the model (Fig. \ref{fig:cross_cap_approach_difference}). The different capacitances vary by $1$-$2$ order of magnitude. The largest capacitance was measured to $19.12$ pF. The curves (Fig. \ref{fig:cross_cap_approach_difference}) start with large deviation and converge near full contact. This is the opposite to the expected behavior (Fig. \ref{fig:cross_cap_approach_sim}). The general shape of the curves is identical for all $3$, while it is expected that the first contact affects the $3$ capacitances differently. \\
%%
diff --git a/chap03.aux b/chap03.aux
index 282ed83dcc9a905ff5b6b42c1c42151678ba594b..8ef3225728b77528380aaf4e33bb99220ca7b721 100644
--- a/chap03.aux
+++ b/chap03.aux
@@ -54,8 +54,8 @@
\@writefile{lof}{\contentsline {figure}{\numberline {4.6}{\ignorespaces (a) normal and the inverted signal. (b) the signal achieved by switching between normal and inverted. }}{67}{figure.caption.62}\protected@file@percent }
\newlabel{fig:signal_switch}{{4.6}{67}{(a) normal and the inverted signal. (b) the signal achieved by switching between normal and inverted}{figure.caption.62}{}}
\@writefile{toc}{\contentsline {subsection}{\numberline {4.3.4}Amplification}{67}{subsection.4.3.4}\protected@file@percent }
-\@writefile{toc}{\contentsline {subsection}{\numberline {4.3.5}Programming}{68}{subsection.4.3.5}\protected@file@percent }
-\newlabel{sec:software}{{4.3.5}{68}{Programming}{subsection.4.3.5}{}}
+\@writefile{toc}{\contentsline {subsection}{\numberline {4.3.5}Programming}{67}{subsection.4.3.5}\protected@file@percent }
+\newlabel{sec:software}{{4.3.5}{67}{Programming}{subsection.4.3.5}{}}
\@writefile{toc}{\contentsline {subsubsection}{Parameters}{68}{section*.63}\protected@file@percent }
\@writefile{toc}{\contentsline {paragraph}{Amplitude (amp)}{68}{section*.64}\protected@file@percent }
\@writefile{toc}{\contentsline {paragraph}{Voltage (volt)}{68}{section*.65}\protected@file@percent }
@@ -63,8 +63,8 @@
\@writefile{toc}{\contentsline {paragraph}{Max Step}{68}{section*.67}\protected@file@percent }
\@writefile{toc}{\contentsline {paragraph}{Polarity}{68}{section*.68}\protected@file@percent }
\@writefile{toc}{\contentsline {subsection}{\numberline {4.3.6}Measured pulse shape}{68}{subsection.4.3.6}\protected@file@percent }
-\@writefile{lof}{\contentsline {figure}{\numberline {4.7}{\ignorespaces (a) approach step and a (b) retract step for the new Walker device \textcolor {tab_red}{(red)} and for comparison the RHK in \textcolor {tab_blue}{(blue)} in an unloaded state for a nominal voltage of 80 V. The dashed \textcolor {tab_green}{green} lines show a timeframe of 1000 $\mu $s around the fast flank, which should be the length of 1 pulse exactly.}}{69}{figure.caption.69}\protected@file@percent }
-\newlabel{fig:walker_pulse_shape_slow}{{4.7}{69}{(a) approach step and a (b) retract step for the new Walker device \textcolor {tab_red}{(red)} and for comparison the RHK in \textcolor {tab_blue}{(blue)} in an unloaded state for a nominal voltage of 80 V. The dashed \textcolor {tab_green}{green} lines show a timeframe of 1000 $\mu $s around the fast flank, which should be the length of 1 pulse exactly}{figure.caption.69}{}}
+\@writefile{lof}{\contentsline {figure}{\numberline {4.7}{\ignorespaces (a) approach step and a (b) retract step for the new Walker device \textcolor {tab_red}{(red)} and for comparison the RHK in \textcolor {tab_blue}{(blue)} in an unloaded state for a nominal voltage of $80$ V. The dashed \textcolor {tab_green}{green} lines show a timeframe of $1000$ {\textmu }s around the fast flank, which should be the length of one pulse exactly.}}{69}{figure.caption.69}\protected@file@percent }
+\newlabel{fig:walker_pulse_shape_slow}{{4.7}{69}{(a) approach step and a (b) retract step for the new Walker device \textcolor {tab_red}{(red)} and for comparison the RHK in \textcolor {tab_blue}{(blue)} in an unloaded state for a nominal voltage of $80$ V. The dashed \textcolor {tab_green}{green} lines show a timeframe of $1000$ {\textmu }s around the fast flank, which should be the length of one pulse exactly}{figure.caption.69}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {4.8}{\ignorespaces Plots showing the fast Flank of the Walker Signal and the fast flank of the RHK Signal, for both (a) approach and (b) retract, for a nominal voltage of 80 V (without load). }}{70}{figure.caption.70}\protected@file@percent }
\newlabel{fig:walker_pulse_shape_fast}{{4.8}{70}{Plots showing the fast Flank of the Walker Signal and the fast flank of the RHK Signal, for both (a) approach and (b) retract, for a nominal voltage of 80 V (without load)}{figure.caption.70}{}}
\@writefile{toc}{\contentsline {subsection}{\numberline {4.3.7}Operation with the Mask Aligner}{70}{subsection.4.3.7}\protected@file@percent }
diff --git a/chap03.tex b/chap03.tex
index b69f104648b971e1365a6c4848a8ce561d5e6776..c842c4502cff02313f7db1314582a7069d0ceae4 100644
--- a/chap03.tex
+++ b/chap03.tex
@@ -73,9 +73,14 @@ Both approach and retract show heavy aliasing artifacts, which could lead to the
\subsection{Voltage behavior}
-The KIM001 device has a controllable parameter called voltage, which is supposed to control the output signal voltage amplitude between $85$ V and $125$ V. In testing it was found to not in fact control the output voltage at all. When the voltage parameter is set to $125$ V the voltage amplitude will be a value $> 150$ V. This value is not consistent and varies by $\pm 25 V$. When the voltage parameter is set to $80$ V the output voltage amplitude is $\approx 80$ V.\\
+%The KIM001 device has a controllable parameter called voltage, which is supposed to control the output signal voltage amplitude between $85$ V and $125$ V. In testing it was found to not in fact control the output voltage at all. When the voltage parameter is set to $125$ V the voltage amplitude will be a value $> 150$ V. This value is not consistent and varies by $\pm 25 V$. When the voltage parameter is set to $80$ V the output voltage amplitude is $\approx 80$ V.\\
+%
+%The signal drifts (within a few $100$ steps) back to a voltage of approx. $118$ V. It does this regardless of set voltage. This behavior is shown in Figure (\ref{fig:kim0001_voltage_behaviour}). This led to the conclusion that the KIM001 device cannot be used for our purposes. A variable voltage is in some situations necessary for driving the Mask Aligner appropriately. Furthermore, there is an inconsistency in peak shape in the signal after 100 steps (\textcolor{tab_green}{green}) as compared to the others, although no settings were changed during the recording of this data.
-The signal drifts (within a few $100$ steps) back to a voltage of approx. $118$ V. It does this regardless of set voltage. This behavior is shown in Figure (\ref{fig:kim0001_voltage_behaviour}). This led to the conclusion that the KIM001 device cannot be used for our purposes. A variable voltage is in some situations necessary for driving the Mask Aligner appropriately. Furthermore, there is an inconsistency in peak shape in the signal after 100 steps (\textcolor{tab_green}{green}) as compared to the others, although no settings were changed during the recording of this data.
+The KIM001 device has a voltage parameter that supposedly controls the output signal voltage amplitude, with a specified range of $85$ V to $125$ V. However, testing revealed that this parameter does not actually control the output voltage. When set to $125$ V, the output voltage amplitude exceeds $150$ V, with a variability of $\pm25$ V. Conversely, setting the voltage parameter to $80$ V results in an output voltage amplitude of approximately $80$ V.
+
+Regardless of the set voltage, the signal drifts back to around $118$ V within a few hundred steps. This behavior is illustrated in Figure (\ref{fig:kim0001_voltage_behaviour}). Due to this inconsistent and uncontrolled voltage output, the KIM001 device is unsuitable for our purposes, particularly since variable voltage control is sometimes necessary for operating the Mask Aligner. Additionally, an inconsistency in peak shape was observed in the signal after $100$ steps, despite no changes in settings during data collection.
+Due to the aforementioned behaviors of the KIM001 device, the device was found to be incapable of providing driving pulses for the Mask Aligner and was thus deprecated.
\begin{figure}[H]
\centering
@@ -84,11 +89,11 @@ The signal drifts (within a few $100$ steps) back to a voltage of approx. $118$
\label{fig:kim0001_voltage_behaviour}
\end{figure}
-Due to the aforementioned behaviors of the KIM001 device, the device was found to be incapable of providing driving pulses for the Mask Aligner and was thus deprecated.
-
\section{Mask Aligner controller "Walker"} \label{sec:walker}
\subsection{Overview}
-In order to find a suitable replacement for the RHK Piezo Motor controller, a new device to drive control pulses to the piezo stacks in the mask aligner was built. The \textbf{P}rinted \textbf{C}ircuit \textbf{B}oard (PCB) is based on the piezo Walker electronics designed to control the piezo Walker used for STM control. Due to this, the device is often referred to as the "Mask Aligner Walker", even though it is not a walker or stepper motor controller. Adaptations were made to adjust it to the desired slip-stick behavior needed for application in the mask aligner. The Controller takes a serial input command and then drives sinusoidal steps with a sharp fast flank at the center of the period. Controllable are the amplitude of the signal and the number of steps. A simplified overview of the entire signal generation process is shown in Appendix \ref{app:walker_diagram}. The following section will look at each part of the process in detail.
+%In order to find a suitable replacement for the RHK Piezo Motor controller, a new device to drive control pulses to the piezo stacks in the mask aligner was built. The \textbf{P}rinted \textbf{C}ircuit \textbf{B}oard (PCB) is based on the piezo Walker electronics designed to control the piezo Walker used for STM control. Due to this, the device is often referred to as the "Mask Aligner Walker", even though it is not a walker or stepper motor controller. Adaptations were made to adjust it to the desired slip-stick behavior needed for application in the mask aligner. The Controller takes a serial input command and then drives sinusoidal steps with a sharp fast flank at the center of the period. Controllable are the amplitude of the signal and the number of steps. A simplified overview of the entire signal generation process is shown in Appendix \ref{app:walker_diagram}. The following section will look at each part of the process in detail.
+
+To find a suitable replacement for the RHK Piezo Motor controller, a new device was developed to drive control pulses to the piezo stacks in the mask aligner. The \textbf{P}rinted \textbf{C}ircuit \textbf{B}oard (PCB) is based on the piezo Walker electronics, originally designed for STM control. Although it's often referred to as the "Mask Aligner Walker", it's not a walker or stepper motor controller. The device was adapted to achieve the desired slip-stick behavior required for the mask aligner application. It accepts serial input commands and generates sinusoidal steps with a sharp, fast flank at the center of the period. The amplitude of the signal and the number of steps can be controlled. A simplified overview of the signal generation process is provided in Appendix \ref{app:walker_diagram}. The following section will provide a detailed examination of each part of the process.
\subsection{Signal generation}
The core of the Mask aligner controller is an Arduino DUE~\cite{arduino_datasheet}. The \textbf{C}entral \textbf{P}rocessing \textbf{U}nit (CPU) of the Arduino DUE the "Atmel SAM3X8E ARM Cortex-M3 CPU" is a $32$-Bit ARM-Core microcontroller. Integrated into the CPU is a $12$-Bit \textbf{D}igital to \textbf{A}nalog \textbf{C}onverter (DAC)~\cite{arduino_cpu_datasheet}. The DAC comes with two output channels that can output simultaneously. The signal provided to the DAC is generated via software. It is further discussed in Section \ref{sec:software} The Arduino generates a signal internally with a sampling rate of $404$ kHz with the shape given by:
@@ -96,9 +101,12 @@ The core of the Mask aligner controller is an Arduino DUE~\cite{arduino_datashee
S = 4095 * \frac{A}{2 \pi} * \sin(2 \pi * t/P) + t/P
\end{equation}
-Where $A$ is an amplitude parameter given by the user, that controls the voltage given at the output. $t$ is the time elapsed since the start of the current step, and $P$ is the period of a single step. The value $4095$ is chosen to use the full range of the $12$-Bit accuracy the Arduino DUE DAC provides. This gives a sinus-like shape of the pulse depicted in Figure \ref{fig:bessel_filter_unfiltered}, that closely matches the pulse shape given by the RHK (Fig. \ref{fig:RHK_pulse_shape}). Similar behavior is expected. \\
-This signal is then output on the DAC 0 pin of the Arduino. The Arduino can only output one polarity of voltage, but our final signal is intended to be bimodal. Therefore, another signal is generated on DAC 1 with $1 - S$ as the given function. The two signals are now subtracted, via a hardware subtractor, from each other as depicted in Figure \ref{fig:bessel_filter_unfiltered}. This gives a bipolar signal following the desired sinusoidal shape. \\
-The Signal given by the Arduino contains aliasing artifacts from the digital to analog conversion. Aliasing leads to sharp very short steps in the signal, which could potentially put the piezo movement into the slip rather than the stick regime. In order to prevent that, the aliasing steps in the signal have to be smoothed out. This is done by applying an 8th order Bessel filter to the signal. The effect of this can be seen in Figure \ref{fig:bessel_filter_filter}.
+Where $A$ is an amplitude parameter given by the user, that controls the voltage given at the output. $t$ is the time elapsed since the start of the current step, and $P$ is the period of a single step. The value 4095 is chosen to utilize the full range of the Arduino DUE's 12-bit DAC, resulting in a sinusoidal pulse shape that closely matches the RHK pulse shape (Fig. \ref{fig:RHK_pulse_shape}). This signal is output on the DAC 0 pin of the Arduino. \\
+However, the Arduino can only output a single polarity of voltage, whereas the desired signal is bimodal. To achieve this, a second signal is generated on DAC 1 with the function $1 - S$. The two signals are then subtracted from each other using a hardware subtractor, as shown in Figure \ref{fig:bessel_filter_unfiltered}. This results in a bipolar signal with the desired sinusoidal shape. \\
+The signal generated by the Arduino contains aliasing artifacts from the digital-to-analog conversion, which can cause sharp, short steps in the signal. These steps could potentially drive the piezo movement into the slip regime instead of the stick regime. To prevent this, an 8th-order Bessel filter is applied to the signal to smooth out the aliasing artifacts. The effect of this filtering can be seen in Figure \ref{fig:bessel_filter_filter}.
+
+%The Arduino can only output one polarity of voltage, but our final signal is intended to be bimodal. Therefore, another signal is generated on DAC 1 with $1 - S$ as the given function. The two signals are now subtracted, via a hardware subtractor, from each other as depicted in Figure \ref{fig:bessel_filter_unfiltered}. This gives a bipolar signal following the desired sinusoidal shape. \\
+%The Signal given by the Arduino contains aliasing artifacts from the digital to analog conversion. Aliasing leads to sharp very short steps in the signal, which could potentially put the piezo movement into the slip rather than the stick regime. In order to prevent that, the aliasing steps in the signal have to be smoothed out. This is done by applying an 8th order Bessel filter to the signal. The effect of this can be seen in Figure \ref{fig:bessel_filter_filter}.
\begin{figure}[H]
\centering
@@ -118,7 +126,9 @@ The Signal given by the Arduino contains aliasing artifacts from the digital to
\subsection{Fast flank}
-The resulting signal is bimodal and of the correct shape, but provides only the slow flank. The fast flank is achieved by taking the signal given and feeding it into a hardware inverter, whilst retaining both the original (normal) and the inverted signal. A simulation of the retained signals can be seen in Figure \ref{fig:signal_switch_entry}. When the signal is at its plateau, a hardware switch is used to change from the normal to the inverted signal. Simulations of the signal are shown in Figure \ref{fig:signal_switch_switched}. The switching is achieved via a ADG1436 switch that has a transition time of $<200$ ns~\cite{switch_datasheet}, this puts it well within the $<1$ $\mu$s time span required for the slip behavior of the signal's fast flank. Circuits diagrams for this can be found in Appendix \ref{app:circuit_electronics}.
+%The resulting signal is bimodal and of the correct shape, but provides only the slow flank. The fast flank is achieved by taking the signal given and feeding it into a hardware inverter, whilst retaining both the original (normal) and the inverted signal. A simulation of the retained signals can be seen in Figure \ref{fig:signal_switch_entry}. When the signal is at its plateau, a hardware switch is used to change from the normal to the inverted signal. Simulations of the signal are shown in Figure \ref{fig:signal_switch_switched}. The switching is achieved via a ADG1436 switch that has a transition time of $<200$ ns~\cite{switch_datasheet}, this puts it well within the $<1$ $\mu$s time span required for the slip behavior of the signal's fast flank. Circuits diagrams for this can be found in Appendix \ref{app:circuit_electronics}.
+
+The resulting signal has the correct shape and is bimodal, but it only provides the slow flank. To achieve the fast flank, the signal is provided to a hardware inverter, and both the original (normal) and inverted signals are retained. A simulation of these retained signals is shown in Figure \ref{fig:signal_switch_entry}. When the signal reaches its plateau, a hardware switch is used to switch from the normal signal to the inverted signal. Simulations of the signal after switching are shown in Figure \ref{fig:signal_switch_switched}. The switching is accomplished using an ADG1436 switch, which has a transition time of less than $200$ ns, as specified in the datasheet~\cite{switch_datasheet}. This transition time is well within the required time span of less than $1$ {\textmu}s for the slip behavior of the signal's fast flank. Circuit diagrams for this switching mechanism can be found in Appendix \ref{app:circuit_electronics}.
\begin{figure}[H]
\centering
@@ -137,12 +147,16 @@ The resulting signal is bimodal and of the correct shape, but provides only the
\end{figure}
\subsection{Amplification}
-The final step is amplification since the Arduino DUE can only output voltages between -$3.3$ and $3.3$ V. For this application a driving signal of $240$ V peak to peak is needed. The signal for each channel is separately amplified. This is done on a separate PCB that is exclusively for amplifying the signal and outputting it to the 4 outputs. It uses several high voltage operational amplifiers (opamps) and a high voltage transformer to boost the signal into the desired range. Circuits diagrams for this can be found in Appendix \ref{app:circuit_electronics}.\\
-The Arduino digital output pins $22$, $24$, $26$ and $28$ control, which channels receive any output signal. Circuits diagrams for this can be found in Appendix \ref{app:circuit_electronics}.
-Afterward there are $4$ relays, one for each channel that can be shut to prevent any current from being on the output leads, this is mainly a safety measure. The $4$ relays are also controlled by the Arduino from the digital outputs $53$, $51$, $49$ and $47$ for the channels Z1, Z2, Z3 and X respectively. The relays are switched off after a waiting period of $2$ seconds after no signal is supplied to the given channel.
+%The final step is amplification since the Arduino DUE can only output voltages between -$3.3$ and $3.3$ V. For this application a driving signal of $240$ V peak to peak is needed. The signal for each channel is separately amplified. This is done on a separate PCB that is exclusively for amplifying the signal and outputting it to the 4 outputs. It uses several high voltage operational amplifiers (opamps) and a high voltage transformer to boost the signal into the desired range. Circuits diagrams for this can be found in Appendix \ref{app:circuit_electronics}.\\
+%The Arduino digital output pins $22$, $24$, $26$ and $28$ control, which channels receive any output signal. Circuits diagrams for this can be found in Appendix \ref{app:circuit_electronics}.
+%Afterward there are $4$ relays, one for each channel that can be shut to prevent any current from being on the output leads, this is mainly a safety measure. The $4$ relays are also controlled by the Arduino from the digital outputs $53$, $51$, $49$ and $47$ for the channels Z1, Z2, Z3 and X respectively. The relays are switched off after a waiting period of $2$ seconds after no signal is supplied to the given channel.
+
+The final step in the signal generation process is amplification, as the Arduino DUE can only output voltages between $-3.3$ V and $3.3$ V, whereas a driving signal of $240$ V peak-to-peak is required for this application. To achieve this, each channel's signal is separately amplified on a dedicated PCB, which utilizes high-voltage operational amplifiers (opamps) and a high-voltage transformer to boost the signal to the desired range. Circuit diagrams for this amplification stage can be found in Appendix \ref{app:circuit_electronics}.\\
+The Arduino's digital output pins 22, 24, 26, and 28 control which channels receive the output signal. Circuit diagrams for this control mechanism can also be found in Appendix \ref{app:circuit_electronics}.\\
+Additionally, four relays, one for each channel, are used to prevent current from flowing through the output leads when not in use, serving as a safety measure. These relays are controlled by the Arduino's digital outputs 53, 51, 49, and 47, corresponding to channels Z1, Z2, Z3, and X, respectively. The relays are automatically switched off after a 2-second waiting period if no signal is supplied to the given channel.
\subsection{Programming} \label{sec:software}
-The software used by the Arduino to generate the signal was written in the course of this thesis. It is written in the Arduino's programming language. Its source code can be found in Appendix \ref{sec:walker_code}. The software is controlled via commands sent over a serial interface.
+The software used by the Arduino to generate the signal was written in the course of this thesis. It is written in the Arduino's programming language, which is heavily based on C. Its source code can be found in Appendix \ref{sec:walker_code}. The software is controlled via commands sent over a serial interface.
\subsubsection{Parameters}
The following parameters can be controlled via the new software:
@@ -161,7 +175,13 @@ The frequency is not adjustable as of the writing of this thesis, though in prin
\subsection{Measured pulse shape}
In order to verify the ability to drive the Mask Aligner with the new electronics, test measurements of both the new Walker and the RHK were performed. For the Mask Aligner a voltage of $80$ V was determined to be the optimum voltage to run experiments (see point of intercept in Figure \ref{fig:calibration_voltage}), for this reason the comparisons will be made at $80$ V, unless specified otherwise. \\
-A measurement of the slow flank, without any attached load, is shown in Figure (\ref{fig:walker_pulse_shape_slow}). The Walker keeps the Voltage of 80 V both in the maxima and minima, while the RHK undershoots in the maximum for approach and overshoots in the minimum and vice versa in the retract. Noticeable is a voltage peak in the RHK behavior after the fast flank, that is absent in the Walker's pulse. The Walker compares favorably to the RHK. It has a more consistent peak shape and its peak voltage corresponds to the one given as a parameter more closely than the RHK. The RHK both under- and overshoots the specified $80$ V, by up to $\approx20$ V. The walker pulses are also more symmetric around the fast flank than the one from the RHK. Both the Walker and the RHK show no aliasing artifacts. Steps visible in Figure \ref{fig:walker_pulse_shape_slow} are due to the limited resolution of the oscilloscope (see Fig. \ref{fig:walker_pulse_shape_fast}). Given this data the Walker seems to outperform the RHK in the unloaded state.
+
+%A measurement of the slow flank, without any attached load, is shown in Figure (\ref{fig:walker_pulse_shape_slow}). The Walker keeps the Voltage of 80 V both in the maxima and minima, while the RHK undershoots in the maximum for approach and overshoots in the minimum and vice versa in the retract. Noticeable is a voltage peak in the RHK behavior after the fast flank, that is absent in the Walker's pulse. The Walker compares favorably to the RHK. It has a more consistent peak shape and its peak voltage corresponds to the one given as a parameter more closely than the RHK. The RHK both under- and overshoots the specified $80$ V, by up to $\approx20$ V. The walker pulses are also more symmetric around the fast flank than the one from the RHK. Both the Walker and the RHK show no aliasing artifacts. Steps visible in Figure \ref{fig:walker_pulse_shape_slow} are due to the limited resolution of the oscilloscope (see Fig. \ref{fig:walker_pulse_shape_fast}). Given this data the Walker seems to outperform the RHK in the unloaded state.
+%
+%To verify the Mask Aligner's performance with the new electronics, test measurements were taken for both the new Walker and the RHK. The optimal voltage for running experiments on the Mask Aligner was found to be $80$ V, as indicated by the point of intercept in Figure
+%\ref{fig:calibration_voltage}). Therefore, comparisons between the two will be made at $80$ V unless otherwise specified.
+
+A measurement of the slow flank without any attached load is shown in Figure \ref{fig:walker_pulse_shape_slow}. The Walker maintains a consistent voltage of $80$ V at both maxima and minima, whereas the RHK undershoots at the maximum during approach and overshoots at the minimum during retract, and vice versa. Notably, the RHK exhibits a voltage peak after the fast flank, which is absent in the Walker's pulse. The Walker performs favorably compared to the RHK, with a more consistent peak shape and a peak voltage that more closely matches the specified $80$ V. In contrast, the RHK under- and overshoots the specified voltage by up to $20$ V. Additionally, the Walker's pulses are more symmetric around the fast flank than those of the RHK. Neither the Walker nor the RHK displays aliasing artifacts. The steps visible in Figure \ref{fig:walker_pulse_shape_slow} are due to the limited resolution of the oscilloscope, as shown in Figure \ref{fig:walker_pulse_shape_fast}. Based on this data, the Walker appears to outperform the RHK in the unloaded state.
\begin{figure}[H]
\centering
@@ -173,12 +193,18 @@ A measurement of the slow flank, without any attached load, is shown in Figure (
\includegraphics[width=\textwidth]{img/Plots/Walker/WalkerRetract.pdf}
\caption{}
\end{subfigure}
- \caption{(a) approach step and a (b) retract step for the new Walker device \textcolor{tab_red}{(red)} and for comparison the RHK in \textcolor{tab_blue}{(blue)} in an unloaded state for a nominal voltage of 80 V. The dashed \textcolor{tab_green}{green} lines show a timeframe of 1000 $\mu$s around the fast flank, which should be the length of 1 pulse exactly.}
+ \caption{(a) approach step and a (b) retract step for the new Walker device \textcolor{tab_red}{(red)} and for comparison the RHK in \textcolor{tab_blue}{(blue)} in an unloaded state for a nominal voltage of $80$ V. The dashed \textcolor{tab_green}{green} lines show a timeframe of $1000$ {\textmu}s around the fast flank, which should be the length of one pulse exactly.}
\label{fig:walker_pulse_shape_slow}
\end{figure}
The slow flank was also measured for both the RHK and the Walker. No load was connected. The results can be seen in Figure (\ref{fig:walker_pulse_shape_fast}). The fast flank of the walker is more stable showing no signs of peaking, and it saturates at the desired voltage of 80 V, while the RHK signal over/undershoots the desired voltage, by about 20 V, before going back down/up. The Walker's fast flank drops from $80$ to $-80$ within $\approx 0.5 \mu$s. The RHK needs nearly $\approx 2 \mu$s on the falling flank and the Walker takes $\approx 1.7 \mu$s to reach $80$ V for the rising slope, while the RHK takes $\approx 2.2 \mu$s. Until the Walker signal fully stabilizes at the desired voltage, another $\approx 1 \mu$s passes for the falling/rising flank, where the falling flank has the stronger undershoot/ringing. The RHK signal does not stabilize for another $\approx 2 \mu$s at least. As before, the Walker either meets or outperforms the RHK in its pulse shape behavior and should thus drive the piezo motors appropriately.
+Measurements of the slow flank were also taken for both the RHK and the Walker, with no load connected. The results are shown in Figure \ref{fig:walker_pulse_shape_fast}. The Walker's fast flank is more stable, with no signs of peaking, and it saturates at the desired voltage of $80$ V. In contrast, the RHK signal over- and undershoots the desired voltage by approximately $20$ V before returning to the desired level.
+
+The Walker's fast flank transitions from $80$ V to $-80$ V in approximately $0.5$ {\textmu}s. The RHK requires nearly $2$ {\textmu}s for the falling flank, while the Walker takes approximately $1.7$ {\textmu}s to reach $80$ V on the rising slope, and the RHK takes approximately $2.2$ {\textmu}s. After the initial transition, the Walker signal takes an additional approximately $1$ {\textmu}s to fully stabilize at the desired voltage, with the falling flank exhibiting stronger undershoot and ringing. The RHK signal, on the other hand, takes at least an additional $2$ {\textmu}s to stabilize. \\
+
+Overall, the Walker's pulse shape behavior either meets or exceeds that of the RHK, indicating that it should be capable of driving the piezo motors effectively.
+
\begin{figure}[H]
\centering
\begin{subfigure}{0.49\textwidth}
@@ -194,7 +220,9 @@ The slow flank was also measured for both the RHK and the Walker. No load was co
\end{figure}
\subsection{Operation with the Mask Aligner}
-The communication diagram with the Walker looks slightly different from the one in Figure \ref{fig:diagram_MA_circ}. The RHK relay is no longer needed since the Walker can take over its function. The new diagram can be seen in Figure \ref{fig:diagram_MA_circ_walker}
+%The communication diagram with the Walker looks slightly different from the one in Figure \ref{fig:diagram_MA_circ}. The RHK relay is no longer needed since the Walker can take over its function. The new diagram can be seen in Figure \ref{fig:diagram_MA_circ_walker}
+
+The communication diagram with the Walker differs slightly from the one shown in Figure \ref{fig:diagram_MA_circ}. Notably, the RHK relay is no longer required, as the Walker can assume its role. The revised diagram is presented in Figure \ref{fig:diagram_MA_circ_walker}.
\begin{figure}[H]
\centering
@@ -203,4 +231,6 @@ The communication diagram with the Walker looks slightly different from the one
\label{fig:diagram_MA_circ_walker}
\end{figure}
-Due to hardware issues with the Walker, no final test with the Mask Aligner attached as a load could not be performed. The actual driving performance could not be tested. Hardware failure caused the positive polarity to no longer reach full $120$ V peak and with a load attached. It stayed below $0$ V giving a single polarity of piezo driving signal in approach direction and no fast flank at all in retract.
+Hardware issues with the Walker prevented the completion of a final test with the Mask Aligner attached as a load. As a result, the actual driving performance could not be evaluated. Specifically, a hardware failure caused the positive polarity to fall short of its expected $120$ V peak, even with no load attached. When a load was applied, the voltage remained below $0$ V, resulting in a single-polarity piezo driving signal in the approach direction and a complete loss of the fast flank in the retract direction.
+
+%Due to hardware issues with the Walker, no final test with the Mask Aligner attached as a load could not be performed. The actual driving performance could not be tested. Hardware failure caused the positive polarity to no longer reach full $120$ V peak and with a load attached. It stayed below $0$ V giving a single polarity of piezo driving signal in approach direction and no fast flank at all in retract.
diff --git a/chap04.tex b/chap04.tex
index 085523108646451c780b1efcb947e0eba2d123e1..f4becdf6340a480e9913735c6167bfc0e70a9c25 100644
--- a/chap04.tex
+++ b/chap04.tex
@@ -296,5 +296,5 @@ To establish the optimal screw setup and verify the effectiveness of the modific
The calibration results, as shown in Figure \ref{fig:calibration_after_repair}, indicate that the three motors exhibit similar performance in the approach direction. The deviation between Z2 and the other motors is within $2\sigma$, while the difference between Z3 and Z1 is up to $6$ nm/step, which is within $6\sigma$ of each other. Assuming a worst-case difference of $6$ nm, the data suggests an angular tilt per step of approximately $(5.73 \times 10^{-6})^\circ$. This corresponds to a height difference on the sample of approximately $0.5$ nm/step, resulting in a penumbra difference of $1.2$ nm for every $100$ steps. \\
-In the retract direction, the difference between motors is within the margin of error for Z2 and Z1, but Z3 deviates by about $4\sigma$ from the others. However, since the mask is aligned during approach, deviations in retract have a lesser impact on alignment. After each evaporation, the mask is retracted to approximately $50$ $\mu$m to prevent damage to the sample. This results in a tilt of $1.2$ $\mu$m over the evaporation field, corresponding to an angle of approximately $0.004^\circ$. This difference would cause a deviation of approximately $38$ nm in penumbra. However, by driving the Z1 and Z2 motors $100$ steps up after retraction, this deviation can be almost fully compensated, resulting in an error of at most approximately $6$ nm of additional penumbra induced by tilt. \\
+In the retract direction, the difference between motors is within the margin of error for Z2 and Z1, but Z3 deviates by about $4\sigma$ from the others. However, since the mask is aligned during approach, deviations in retract have a lesser impact on alignment. After each evaporation, the mask is retracted to approximately $50$ {\textmu}m to prevent damage to the sample. This results in a tilt of $1.2$ {\textmu}m over the evaporation field, corresponding to an angle of approximately $0.004^\circ$. This difference would cause a deviation of approximately $38$ nm in penumbra. However, by driving the Z1 and Z2 motors $100$ steps up after retraction, this deviation can be almost fully compensated, resulting in an error of at most approximately $6$ nm of additional penumbra induced by tilt. \\
diff --git a/chap05.tex b/chap05.tex
index e0d49f8c90acb11d432c5db942fe3038fb0304a4..9a16a35b276c1bf1c8ea197bcb9ca3811100b437 100644
--- a/chap05.tex
+++ b/chap05.tex
@@ -4,7 +4,7 @@
To optimize the penumbra of Pb islands on a \ce{Si} sample, a series of evaporations were performed. The \ce{Si}(111) sample was prepared and cleaned according to the process described in Section \ref{sec:sample_prep}. The cleanliness of both the sample and mask was confirmed optically before they were inserted into the Load Lock.
-Five evaporations were conducted to assess the edge sharpness of the evaporated dots at different distances. The measurements began at a distance of $25 \pm 5$ $\mu$m from the sample. The approach curve to full contact was recorded, and the first evaporation was performed at this point of full contact. The approach curve is shown in Figure \ref{fig:evaporation_approach_curve}.
+Five evaporations were conducted to assess the edge sharpness of the evaporated dots at different distances. The measurements began at a distance of $25 \pm 5$ {\textmu}m from the sample. The approach curve to full contact was recorded, and the first evaporation was performed at this point of full contact. The approach curve is shown in Figure \ref{fig:evaporation_approach_curve}.
\begin{figure}[H]
\centering
@@ -15,14 +15,14 @@ Five evaporations were conducted to assess the edge sharpness of the evaporated
The 3 capacitance sensors appear heavily correlated and the uncertainty on C2 and C3 is an order of magnitude larger than the step in $dC$. For this reason C1 was primarily used for alignment. C2 and C3 were recorded but not utilized. The other evaporations were performed by retracting the mask $1000$ steps and approaching.
-The subsequent evaporations were performed by retracting the mask $1000$ steps and then approaching the sample. Four additional evaporations were conducted at different lateral positions on the sample. Each evaporation consisted of a $9 \times 9$ field of $3$ $\mu$m Pb circles, as previously shown in Figure \ref{fig:mask_aligner_nomenclature_capacitances_mask}. Each field was evaporated at different mask-sample distances, as described by the approach curve. The evaporations were performed with the following stop conditions:
+The subsequent evaporations were performed by retracting the mask $1000$ steps and then approaching the sample. Four additional evaporations were conducted at different lateral positions on the sample. Each evaporation consisted of a $9 \times 9$ field of $3$ {\textmu}m Pb circles, as previously shown in Figure \ref{fig:mask_aligner_nomenclature_capacitances_mask}. Each field was evaporated at different mask-sample distances, as described by the approach curve. The evaporations were performed with the following stop conditions:
\begin{itemize}
- \item Field 1: $1$ $\mu$m distance to sample (Full contact)
- \item Field 2: $16$ $\mu$m distance to sample (First Contact)
- \item Field 3: $16$ $\mu$m (Shortly before first contact at stop condition $0.12$ pF)
- \item Field 4: $4$ $\mu$m (Second Contact)
- \item Field 5: $1$ $\mu$m (Full Contact)
+ \item Field 1: $1$ {\textmu}m distance to sample (Full contact)
+ \item Field 2: $16$ {\textmu}m distance to sample (First Contact)
+ \item Field 3: $16$ {\textmu}m (Shortly before first contact at stop condition $0.12$ pF)
+ \item Field 4: $4$ {\textmu}m (Second Contact)
+ \item Field 5: $1$ {\textmu}m (Full Contact)
\end{itemize}
The parameters used for the evaporator are shown in Appendix \ref{app:evaporation}. The turbomolecular pump was by mistake not turned off during evaporation. \\
@@ -72,7 +72,7 @@ The entire surface of the sample is contaminated with small particles, approxima
The data in Figure \ref{fig:evaporation_contamination} shows that the particles are up to $\approx 40$ nm in height and with an average height of $24 \pm 10$ nm. The particle's average width is $40 \pm 10$ nm. Height and width were obtained by fitting flattened Gaussian functions to the particles line cuts and extracting $2\sigma$ as well as the height of the peak. The distribution of particles across the sample surface is isotropic.
-In addition, the sample was contaminated with larger particles possibly from long exposure at atmospheric conditions as well as being inside the Mask Aligner Chamber during vacuum bakeout, where the system was heated to $>100$°C for several days on $2$ separate occasions. The size of these larger particles was determined to be in the order of $\mathcal{O}(100 \text{nm})$ using SEM and on the order of $\mathit{O}(10)$ $\mu$m in diameter. \\
+In addition, the sample was contaminated with larger particles possibly from long exposure at atmospheric conditions as well as being inside the Mask Aligner Chamber during vacuum bakeout, where the system was heated to $>100$°C for several days on $2$ separate occasions. The size of these larger particles was determined to be in the order of $\mathcal{O}(100 \text{nm})$ using SEM and on the order of $\mathit{O}(10)$ {\textmu}m in diameter. \\
As the sample was only inspected optically before being inserted into the UHV chamber, it is possible that the small particle contamination was not detected. To avoid this issue in the future, it is recommended that the sample be examined for contaminants using AFM before being inserted into the chamber.
\section{Penumbra}
@@ -170,7 +170,7 @@ The differences in penumbra width between the top, bottom, right, left, and cent
The height of the dots (Figure \ref{fig:evaporation_measured_penumbra_height}) is spread around a mean value of $2.6 \pm 0.3$ nm and shows deviation from the expected $5$ nm expected from flux. \\
-The diameter of the \ce{Pb} dots is expected to decrease with subsequent evaporation due to clogging of the mask. This trend is mirrored in the data. The average diameter of evaporation decreases from $3.02 \pm 0.04$ $\mu$m for field $1$ to $2.947 \pm 0.008$ $\mu$m for field $5$. From a linear regression a decrease in diameter of $0.017 \pm 0.004$ $\mu$m per evaporation is determined. \\
+The diameter of the \ce{Pb} dots is expected to decrease with subsequent evaporation due to clogging of the mask. This trend is mirrored in the data. The average diameter of evaporation decreases from $3.02 \pm 0.04$ {\textmu}m for field $1$ to $2.947 \pm 0.008$ {\textmu}m for field $5$. From a linear regression a decrease in diameter of $0.017 \pm 0.004$ {\textmu}m per evaporation is determined. \\
The eccentricity of the dot's outer shape was determined by measuring the diameter of multiple line cuts on the circle via fit and comparing measurements of perpendicular line cuts. The resulting eccentricity was as in the weighted mean $0.2 \pm 0.1$, which suggest that the dots are circular within measurement accuracy. The outer dot shape is not affected by the tilting effects.\\
@@ -198,7 +198,7 @@ To investigate this, the direction of the angle of the major axis was measured (
\label{fig:evaporation_tilts}
\end{figure}
-The smallest minor axis found in the AFM data was $2.15 \pm 0.08$ $\mu$m compared to the $3.01\pm 0.05$ $\mu$m of the evaporated circle. This would imply a tilt from one side of the dot on the mask to the other of $44 \pm 9 ^\circ$. This corresponds to a difference in mask sample distance of $2.08 \pm 0.31$ $\mu$m. This tilt and distance are too large to be plausible. Another effect is likely at play in addition to some bending. \\
+The smallest minor axis found in the AFM data was $2.15 \pm 0.08$ {\textmu}m compared to the $3.01\pm 0.05$ {\textmu}m of the evaporated circle. This would imply a tilt from one side of the dot on the mask to the other of $44 \pm 9 ^\circ$. This corresponds to a difference in mask sample distance of $2.08 \pm 0.31$ {\textmu}m. This tilt and distance are too large to be plausible. Another effect is likely at play in addition to some bending. \\
\begin{figure}[H]
\centering
@@ -311,7 +311,7 @@ After a user specified time has passed, the amount of hits on each pixel is save
\label{fig:evaporation_simulation_first_compare}
\end{figure}
-An image of a simple simulation for an oscillating mask dot with parameters obtained from the AFM measurement can be seen in Figure \ref{fig:evaporation_simulation_first_compare_SIM}. The parameters for the amplitude of the oscillation were extracted from the AFM image shown in Figure \ref{fig:evaporation_simulation_first_compare_AFM}. Vibrations were assumed to be harmonic during the deposition and different sticking factors of \ce{Pb}-\ce{Si} and \ce{Pb}-\ce{Pb} were not considered. The oscillation was modeled with a displacement of $0.143$ $\mu$m in x and $-0.358$ $\mu$m in z direction and a tilt of $-41.12^\circ$ in $\alpha$, $10^\circ$ in $\beta$ and $31^\circ$ in $\gamma$. \\
+An image of a simple simulation for an oscillating mask dot with parameters obtained from the AFM measurement can be seen in Figure \ref{fig:evaporation_simulation_first_compare_SIM}. The parameters for the amplitude of the oscillation were extracted from the AFM image shown in Figure \ref{fig:evaporation_simulation_first_compare_AFM}. Vibrations were assumed to be harmonic during the deposition and different sticking factors of \ce{Pb}-\ce{Si} and \ce{Pb}-\ce{Pb} were not considered. The oscillation was modeled with a displacement of $0.143$ {\textmu}m in x and $-0.358$ {\textmu}m in z direction and a tilt of $-41.12^\circ$ in $\alpha$, $10^\circ$ in $\beta$ and $31^\circ$ in $\gamma$. \\
A local deformation of approximately $45^\circ$ at a single hole site would result in significant strain on the mask. The observed tilt is likely the outcome of a combination of x-y displacement and bending of the mask. If the tilt were solely caused by vibrations, the mask would oscillate between two positions, resulting in an elliptical overlap of the two extreme positions.
@@ -324,7 +324,7 @@ However, if there is an additional displacement component in the z-direction, a
\label{fig:evaporation_simulation_overlap}
\end{figure}
-The amplitude of displacement in the example in Figure \ref{fig:evaporation_simulation_first_compare_SIM} is $\approx 0.4$ $\mu$m, this is in line with the peak to peak amplitude of an active turbomolecular pump given by $1$ $\mu$m, obtained in the PhD thesis of Priyamvada Bhaskar~\cite{Bhaskar}. While the lateral dot shift seen in Fig \ref{fig:evaporation_simulation_first_compare} is refleceted in this specific simulation, it does not represent the exact shape of the deformation of the dot. For instance, the elliptical penumbra (highlighted in red in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) appears rough in the AFM image, but its height is uniform. In contrast, the simulation shows a penumbra that gradually decreases in height. Furthermore, the lower edge of the elliptical shape visible in the AFM dot below the circle (\textcolor{tab_cyan}{cyan} in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) is invisible in the AFM image, while it is very pronounced in the simulated image. The lower edge is sharp in the AFM image $61 \pm 9$ nm while it is smeared out in the simulated image. Parameters were obtained as described in Figure \ref{fig:penumbra_tilt_sigmas}.\\
+The amplitude of displacement in the example in Figure \ref{fig:evaporation_simulation_first_compare_SIM} is $\approx 0.4$ {\textmu}m, this is in line with the peak to peak amplitude of an active turbomolecular pump given by $1$ {\textmu}m, obtained in the PhD thesis of Priyamvada Bhaskar~\cite{Bhaskar}. While the lateral dot shift seen in Fig \ref{fig:evaporation_simulation_first_compare} is refleceted in this specific simulation, it does not represent the exact shape of the deformation of the dot. For instance, the elliptical penumbra (highlighted in red in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) appears rough in the AFM image, but its height is uniform. In contrast, the simulation shows a penumbra that gradually decreases in height. Furthermore, the lower edge of the elliptical shape visible in the AFM dot below the circle (\textcolor{tab_cyan}{cyan} in Figure \ref{fig:evaporation_simulation_first_compare_AFM}) is invisible in the AFM image, while it is very pronounced in the simulated image. The lower edge is sharp in the AFM image $61 \pm 9$ nm while it is smeared out in the simulated image. Parameters were obtained as described in Figure \ref{fig:penumbra_tilt_sigmas}.\\
The different roughness of circle and ellipse might suggest different possible reasons. First it could be a chronological effect where the circle is deposited first, and the ellipse is deposited second. Another possibility is that the vibration causes the displacement and bending of the mask in a pattern that is anharmonic, which causes the extreme points of the oscillation to be preferred. In order to investigate possible sources of this effect, the simulation was amended. \\
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diff --git a/thesis.log b/thesis.log
index b099e655db2e6a41b4ee8b60dca244b09242784c..33aaf7a35dacd33b581f8a4226641465bc339e99 100644
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